新型数控光纤矢量和微波光子移相器

针对相控阵天线中基于光纤的微波光子移相器原理进行研究,并设计了新型方案,通过引入可调分光器和保偏光纤,降低了移相器的复杂性和相干干涉损耗,在对光纤长度的精度要求上有很大改善,从而提高了可实现性,增强了移相器的可控性。研究了分光系数和频率对信号相位和幅度的影响,实现了超过140的相移。最后通过设计数控电压源实现对分路器驱动电压的调整,从而改变两路光纤的光分量,最终实现对输出信号相位的数字控制。该新型微波光子移相器方案易于实现,并具有一定的创新性。     

5位TTL电平数控移相器的设计——一种新颖的高频段数控移相器的设计方法

本文介绍了一种用正交耦合器设计高频段数控移相器的方法。着重阐述数控移相器电路中的插损、相移波动、转换速度等问题的解决方法。     

高精度数控微波移相器设计

使用DDS级联数字移相器和PLL技术相结合的方法,实现了一种新型的微波信号移相器,可针对单音微波信号进行精确数字控制移相,最高移相分辨率远超过常规DDS移相器,达到了2π×2-24rad.介绍了系统设计方案及电路工作原理,并给出了实验结果.此电路适用于需要精确控制两路或多路正弦信号相对相位移的应用场合,经过电路扩展,还可用于带限信号的精确移相.     

X波段4位数控移相器MMIC研究

采用0.25μm GaAs FET芯片工艺成功制作了X波段4位数控移相器MMIC,对该数控移相器MMIC集成电路的设计、工艺制作过程做了阐述,并给出了实际测试参数.电路设计采用了高低通滤波器式移相器拓扑,串联FET与并联FET组合的电路方式.结果表明,在7.5～8.7 GHz频段内插入损耗≤7 dB,电压驻波比≤1.8∶1,开关时间≤30 ns,移相精度22.5°±2°,45°±3°,90°±3°,180°±3°,所有状态均方根移相误差≤5,控制电压-5 V或0 V.     

基于载波和边带相位控制的微波光子移相器

为了实现一种360°相移新型微波光子移相器，通过使用一个相位调制器、延迟线和光学滤波器来控制载波和边带的相位，最终控制射频信号的相位。相位调制器只需控制一个电压来调节移相角度，减少了使用复杂双平行马赫-曾德尔调制器所导致的漂移带来的影响，具有结构简单、成本较低等优点。结果表明，仿真验证的微波光子移相器可以在0GHz~40GHz频率范围内实现从0°~360°的全相移范围，并且在同一输出相位情况下，频率在0GHz~40GHz范围内，功率基本保持不变。此研究对微波光子移相器技术有一定参考意义。     

多路集成有机聚合物光子学射频移相器

本文简要介绍一种新型的集成光子学射频移相器,并对移相器的工作原理及特点进行分析。该新型移相器能够实现对每一阵元的相移量进行独立的调控、相移线性度大、插入损耗小、相移精度和幅度稳定度高等优点。结果表明,输出的射频信号的功率波动小于3dB,得到360°连续线性相移。     

十位数控射频移相器的设计与验证

针对GSM超线性前馈功率放大器控制单元对信号相位控制的需求,利用ADS软件仿真并设计了一种射频移相器单元电路,该单元采用一个3dB电桥与4个变容二极管SMV1245组成了一个反射式射频移相网络,工作频率为930MHz～960 MHz,控制电压0～5 V。数字控制部分由ARM7主控芯片与十位数控DA芯片X9119组成。最终以聚四氟乙烯为介质的微带电路板实现、经网络分析仪实际测试可实现在0～147°范围内的相移控制,控制精度为10Bit,状态切换速度<300μs,插入损耗<-2.3dB,损耗波动<±0.7dB。     

用数控移相器实现对脉冲多普勒雷达的干扰

脉冲多普勒雷达是一种新型体制雷达,其发展基础源于动目标显示雷达。过去,对脉冲多普勒雷达进行干扰的器件是行波管,在其螺线极与地之间加锯齿波信号实现载频移频,加噪声信号实现噪声调相,这种方法存在诸多弊端。随着数字技术的快速发展,数控移相器具备小体积、高速度、低输入、易控制等优点,而这些特点正是行波管所欠缺的。故采用数控移相...     

金属陶瓷贴片封装的S波段六位数控移相器

介绍了一款自主设计采用0.25μm GaAs PHMET开关工艺制作的的S波段六位数控移相器芯片和金属陶瓷表贴管壳内的设计方法和研制结果.该移相器在工作频带2.8～3.6 GHz内64个移相态的移相精度RMS＜1.0°、插入损耗IL＜5 dB、输入输出驻波比VSWR＜1.5、幅度均衡△IL＜0.3 dB、1分贝压缩输入...     

Compact digital phase shifter utilising negative phase velocity

A compact digital phase shifter is presented utilising negative phase velocity in metamaterial technology. The phase shifter was designed and it was measured ranging from 0deg to 360deg with discrete increments of 60deg. The measurement result shows that the average increment of phase shift was X = 59.28deg and its standard deviation was sigma = 6.64deg.     

Monolithic dual-gate GaAs FET digital phase shifter

The design, fabrication, and characterization of a fully monolithic FET digital phase-shifter circuit is described. The circuit is designed around a unique dual-gate FET structure Operating as a switchable single-pole, double-throw amplifier. Each 2.5 × 3.0-mm chip has one bit (e.g., 22.5°, 90°, etc.) of phase control. The circuit, which includes all dc bypass circuitry on-chip, features thin-film lumped element capacitors and inductors, air-bridge crossovers and interconnects, via-hole frontside grounding, and integral beam leads. The fabrication of these elements is described in some detail. The phase-shifter circuit gives a peak gain of 3 dB across a 10-percent bandwidth in X-band. A method of achieving continuous phase and amplitude control using a 90° bit chip is described. Finally, phase performance of a four-bit digital phase shifter realized by cascading four monolithic active phase-shifter chips is reported.     

Ka波段4位数字移相器的设计

移相器的应用十分广泛,比如各种通讯和雷达系统,微波仪器和测量系统,特别在相控阵雷达中应用最多。移相器是相控阵雷达T/R组件的重要组成部分。本文主要对Ka波段4位数字移相器进行了研究,并完成了实际电路的设计、制作和测试。在34.2GHz±300MHz频率范围内,所有相移位（16个）的插入损耗都小于10.71dB,输入端和输出端的回波损耗也都小于-14.84dB。另外,所有相移位在中心频率34.2GHz处的相位误差都小于士3.0°,最小仅有0.15°,所有指标均优于设计要求。     

Ku波段五位数字移相器的设计

本文设计了11.4～12.8GHz频段内五位数字移相器的电路拓扑.采用GaAs MESMET技术建立封须开关模型,对高/低通网络型网络拓扑及场效应管嵌入桥π型电路的移相器拓扑进行仿真,结果表明,当中心须率在12GHz时,达到精确的移相度数,在整个频带内插入损耗小于2dB,移相精度(RMS)小于30,移相前后电压驻波比小于1.35.     

L波段五位数字移相器的宽带自动修调

以 L 波段五位数字移相器的宽带自动修调为例 ,介绍了激光自动修调系统的组成和工作过程 ,讨论了移相器的可修调设计和修调算法的设计。激光自动修调技术可用于多种微波电路 ,可以缩短调试时间 ,降低生产成本 ,满足大批量生产的要求。     

Control circuit for ferrite phase shifter

A circuit is described that uses a digitally controlled variable-pulse-duration generator to determine the phase setting of a 9 GHz ferrite phase shifter to an accuracy of within ±4°. The circuit incorporates temperature compensation, test facilities and phase information stored in a read-only memory.     

A new digital phase shifter architecture suitable for MMIC's

A new architecture is proposed for digital phase shifters that is suitable for monolithic integration (MMIC's). It consists of an arrangement of a standard building block which is a vector summer and limiter repeated many times over the circuit. Examples of phase shifters up to 6 b are given. Other arrangements of these blocks are mentioned, which give rise to new possibilities     

A precise digital phase shifter using a phase-locked loop

A phase-locked loop containing a voltage-controlled oscillator (v.c.o.) synchronised to a harmonic of its fundamental output frequency may be used to form an attractive digital phase shifter providing low phase error with relatively simple circuitry and control requirements. Phase increments of 2?/n radians are obtained, where n is the order of harmonic used.     

Comments on `Quarter-wave transformer for a digital phase shifter?

In a recent publication, Hering describes a method to match a ferrite-loaded waveguide. It will be shown here that this approach leads to erroneous results for most cases of interest.     

Design and performance of a new digital phase shifter at X-band

A new digital phase shifter design at X-band is presented. The phase shifter operates based on converting a microstrip line to a rectangular waveguide and thus achieving the phase shift by changing the wave propagation constant through the medium. As a proof of principle, a 3-b phase shifter has been designed and constructed using PIN diode switches. An average insertion loss of 1.95 dB and phase shift error of less than 4/spl deg/ at 10.6 GHz are achieved.