非对称双极脉冲磁控溅射制备Ti-Co-La-N纳米薄膜性能

利用非对称双极脉冲磁控溅射制备了不用Co-La掺杂量的Ti-Co-La-N纳米复合薄膜.分别用扫描电子显微镜、X射线衍射、纳米压痕仪、划痕仪以及摩擦磨损仪研究了薄膜的表面形貌、结合力、显微硬度和摩擦学性能.结果表明:复合薄膜主要有TiN相、Co2N相和LaN相组成;复合膜的纤维硬度达到14.61 GPa,低于TiN的显微硬度;复合薄膜的显微硬度和结合力都随着Co-La掺杂量的增加而降低;在高速钢基体上复合薄膜的摩擦系数达到了0.6.     

不同氮含量BCN薄膜的微观结构与摩擦学行为

用电弧增强反应磁控溅射方法(AEMS)在高速钢(W18Cr4V)基体上制备出具有耐磨减摩性能的BCN薄膜。用X射线衍射仪(XRD)、高分辨透射电镜(HRTEM)和X射线光电子能谱(XPS)研究了氮含量对薄膜微观结构的影响;用显微硬度计和销盘式摩擦磨损仪研究了薄膜硬度和摩擦学行为。结果表明:用AEMS方法制备的BCN薄膜为非晶结构,薄膜中的B-N键的含量随氮含量增加而增加;薄膜中氮含量的增加使薄膜的硬度和摩擦系数升高,磨损率降低。     

调制周期对TiN/Ti多层膜组织结构和结合力的影响

为了阐明调制周期对薄膜微观组织及薄膜与基体结合力的影响,采用反应磁控溅射在Ti6Al4V基板上交替沉积了Ti层及TiN层制备了TiN/Ti多层膜。利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、显微硬度仪和划痕仪测量分析了薄膜的晶体结构、微观组织、硬度以及薄膜与基体之间的结合力。研究结果表明:TiN/Ti多层膜中均存在TiN,Ti和Ti2N 3种相。TiN/Ti多层膜均以柱状晶方式生长,在调制周期较大(5层)时,TiN和Ti层的界面清晰;随着调制周期的减小(层数增加),TiN和Ti层的界面逐渐消失。与单层TiN薄膜相比,多层TiN/Ti薄膜的硬度显著提高;但随着薄膜层数的增加,多层TiN/Ti薄膜硬度略微降低。当调制周期为80nm(30层)时,薄膜与基体的结合力明显提高,达到73N。     

ZrN及其多层膜的性质和耐腐蚀性能

用磁过滤电弧制备了ZrN和ZrN／TiN多层膜，磁控溅射制备了ZrN薄膜。结果表明，ZrN／TiN多层膜，由于纳米多层化作用，硬度高于ZrN和TiN的26GPa和2lGPa，平均值达到34．5GPa。X射线衍射分析表明，ZrN／TiN多层膜由ZrN和TiN组成。过滤电弧制备的ZrN和ZrN／TiN多层膜的结合力为8lN和77N，磁控溅射制备的ZrN薄膜的结合力为26N。极化曲线的结果显示，过滤电弧制备的ZrN和ZrN／TiN多层膜的耐腐蚀性显著优于磁控溅射制备的ZrN薄膜，讨论了两种方法制备薄膜性能差异的原因。     

W、Mo离子注入对离子镀TiN薄膜表面结构和性能的影响

目的进一步改善氮化钛薄膜的摩擦学性能。方法利用金属蒸汽真空弧源(MEVVA)在离子镀TiN薄膜表面进行等剂量W、Mo离子注入。采用扫描俄歇系统、光学三维形貌仪、X射线衍射仪和纳米压痕仪,分别分析了TiN薄膜的离子注入深度、表面形貌及粗糙度、相结构和不同压入深度的薄膜硬度。在球盘滑动摩擦磨损试验机上考察了TiN薄膜的摩擦学性能,并利用扫描电子显微镜和三维形貌仪对其磨损形貌进行分析。结果等剂量离子注入后,TiN表面注入层中W离子的含量明显大于Mo离子,两种离子注入对TiN薄膜的表面形貌和硬度的影响较小。XRD结果表明,W离子和Mo离子注入后均发现了Ti_2N硬质相。两种离子注入均可以不同程度地降低TiN薄膜的摩擦系数和磨损率。结论 W、Mo离子注入均可显著改善TiN薄膜的摩擦学性能,但Mo离子更有利于其摩擦系数的降低,而W离子注入更有利于TiN薄膜磨损率的降低。     

低温磁控溅射与普通多弧离子镀TiN薄膜的摩擦学性能比较

采用低温磁控溅射和普通多弧离子镀分别在冷作模具钢基体上制备了TiN薄膜，用纳米压痕法测量了薄膜的表面硬度，并比较了低温磁控溅射与普通多弧离子镀TiN薄膜的摩擦学性能。试验表明，低温磁控溅射TiN薄膜具有与普通多弧离子镀TiN薄膜相近的表面硬度，在多种试验条件下，低温磁控溅射TiN薄膜都有较好的摩擦学性能，摩擦副的磨损率低，摩擦因数小且变化平稳，磨损表面光滑。     

电弧离子镀TiN工艺优化及TiN/TiC多层膜性能

采用电弧离子镀技术制备TiN薄膜,研究了不同氮分压以及基体偏压下薄膜的表面质量、微结构、相组成、硬度以及结合力,优化工艺参数并制备TiN/TiC多层膜,比较了多层膜以及TiC单层膜的硬度以及摩擦性能的差异。结果表明,经过对不同工艺参数下薄膜的形貌结构以及性能比较,确定采用0.6 Pa氮分压以及-100 V基体偏压作为TiN优化工艺参数,在该工艺基础上制备的TiN/TiC多层膜与单层TiC薄膜相比具有更高的硬度以及更低的摩擦系数。     

阴极弧径向不同位置膜层性能分布规律

利用阴极弧沉积的方法在201不锈钢基体上制备了TiN薄膜,研究了阴极弧径向不同位置大颗粒、膜厚以及膜层性能的分布规律.分别采用X射线衍射(XRD)和扫描电子显微镜(SEM)分析了膜层的相结构、膜层的表面形貌和截面形貌.研究了镀膜试样和基体在3.5%(质量分数)NaCl溶液中的腐蚀行为,并利用电化学方法分析其抗腐蚀性能,并采用球-盘式摩擦磨损、划痕测试以及微小压痕等方法测试了径向不同位置沉积的TiN薄膜摩擦磨损性能、膜基结合力以及硬度.结果表明,靠近靶材中心的位置,膜层的硬度、厚度最大,电化学腐蚀电位最高,在径向夹角20°处的膜层厚度、硬度最小.在靠近出气位置侧沉积的TiN薄膜大颗粒数目较多,造成表面缺陷增加,TiN薄膜的抗腐蚀性能下降.靠近弧源中心位置沉积的膜层摩擦磨损系数较大,两侧处的膜层摩擦系数较小,膜基结合力与表面形貌和膜层厚度有很大关系.     

深振荡磁控溅射复合沉积CrN/TiN超晶格薄膜的结构和性能研究

本文分别采用深振荡磁控溅射(Deep Oscillation Magnetron Sputtering, DOMS)复合脉冲直流磁控溅射(Pulsed dc Magnetron Sputtering, PDCMS)技术和单一的PDCMS技术,沉积厚度为2 mm、调制周期为6.3 nm的CrN/TiN超晶格薄膜。利用XRD、SEM和TEM表征薄膜的结构。利用纳米压痕仪、划痕仪和空气电阻炉分别测试薄膜的力学性能、结合力和热稳定性。利用球-盘式摩擦磨损试验机测试薄膜的摩擦学性能。利用阳极极化实验测试薄膜在3.5 wt.% NaCl溶液中腐蚀性能。研究表明,与单一的PDCMS技术相比,DOMS+PDCMS复合技术显著改善了CrN/TiN超晶格薄膜结构,薄膜具有更优异的力学、持久的耐磨减摩和抗腐蚀综合性能。     

非平衡磁控溅射制备氮化铬膜及其摩擦学性能研究

为了克服传统TiN膜系镀层的性能不足，采用新型非平衡磁控溅射技术制备了一系列氮化铬膜，采用原子力显微镜(AFM)和SEM对所制备不同厚度的薄膜形貌进行了分析，测定了薄膜的厚度、硬度和膜基结合强度，并对薄膜的摩擦学性能进行了研究。结果表明，使用铬过渡层可以提高膜基结合强度，实现薄膜性能的优化。采用新型非平衡磁控溅射方法制备的氮化铬膜显示出高硬度、低摩擦系数和良好的抗磨性。并考察了镀层厚度对镀层摩擦学性能的影响以及其它影响镀层摩擦学性能的因素。     

Effects of gradient interlayer on residual stress and cracking in TiN thin films

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沉积温度和退火处理对BCN薄膜结构的影响

采用脉冲激光沉积技术,在Si(100)基片上制备了BCN薄膜,研究了沉积温度和退火处理对BCN薄膜组分和结构的影响。利用傅里叶变换红外光谱(FTIR)和X射线光电子能谱(XPS)对制备的BCN薄膜进行了表征。结果表明:沉积温度升高时,BCN薄膜的组分无明显改变。所制备的BCN薄膜包含B—N,C—B和C—N化学键,是由杂化的B—C—N键构成的化合物。真空退火温度为700℃时,BCN薄膜结构稳定;大气退火温度达到600℃时,BCN薄膜表面发生氧化分解,同时有C≡N键形成,表明C≡N键具有较好的高温热稳定性。     

模具钢表面连续激光沉积TiN类薄膜的研究

利用波长为10.6 μm的CO2连续激光诱导化学气相沉积的方法,在模具钢基体上沉积TiN类薄膜.采用XRD、OM、SEM、EDS等手段分析薄膜的组织和相结构.实验表明,当激光功率为600W,扫描速度为2 mm/s时,通过H2、N2和TiC14之间的化学反应,在模具钢表面获得了均匀致密的枝晶组织,其显微硬度最高可达2500HV.     

PECVD OF HARD AND ELASTIC BCN COATINGS

Compounds of the B-C-N system are very promising to produce superhard coatings with good tribological, chemical and thermal properties. Consequently, BCN films were prepared by plasma enhanced chemical vapor deposition (PECVD). The films were deposited from gaseous mixtures of BCl3-C2H4-N2-H2-Ar in different unipolar and bipolar pulsed glow discharges at 550℃ and analyzed with respect to composition, electronic structure and mechanical properties. The micro structure and composition of the BCN films were determined by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). Mechanical properties were characterized using both the traditional Vickers method and nanoindentation. The films, that were deposited using a bipolar pulsed generator, were weak and had a sponge-like structure, whereas the films prepared using an unipolar generator were well adherent, had a hardness of more than 11GPa and very high e     

Microstructure,Mechanical, and Tribological Properties of CNx Thin Films Prepared by Reactive Magnetron Sputtering

The microstructure,mechanical,and tribological properties of the carbon nitride(CN_x) thin films with different nitrogen contents deposited on high-speed steel substrates by reactive magnetron sputtering were studied.CN_x films with nitrogen contents from 10.7 to 28.2 at.%had an amorphous structure composing of the carbon bonds of sp~2C-C,sp~2C-N,and sp~3C-N.The TiN inter-layer cause the adhesion of CN_x films enhancement.The more nitrogen concentration led to larger film hardness and friction coefficient against GCr15 steel balls,but the wear rates decreased.     

Room-temperature growth of high-purity titanium nitride by laser ablation of titanium in a nitrogen atmosphere

Thin films of titanium nitride (TiN) were deposited on glass substrates by KrF excimer laser ablation of titanium over a very broad nitrogen pressure range with different target–substrate distances at room temperature. The as-deposited TiN thin films were analyzed by X-ray diffraction and transmission electron microscopy. It was found that the as-deposited thin films are normally a mixture of TiN and metallic titanium, and the TiN-to-Ti ratio of the as-deposited thin film depends on both the nitrogen pressure and the target–substrate distance. High-purity TiN thin films can be obtained only in a very narrow deposition parameter range. A compound parameter (the product of the nitrogen pressure and the target–substrate distance) is proposed to optimize the deposition of high-purity TiN thin films, and the possible mechanism is also discussed. It was also revealed that the as-deposited TiN thin films are polycrystalline with an average grain size of about 20 nm.     

Deposition of TiN thin films on Si(100) by HCD ion plating

Titanium nitride (TiN) films were deposited on Si(100) substrates using a hollow cathode discharge ion plating (HCD-IP) technique. Based on previous experimental results, the optimum deposition conditions were chosen. The thickness of the TiN film and the angle between the specimen surface and the evaporating source (coating angle) were selected as the variable parameters. The purpose of this study is to investigate the effect of these two processing parameters on the properties of TiN films. After deposition, the thin film structure was characterized by X-ray diffraction (XRD), cross-sectional transmission electron microscopy (XTEM), and field-emission-gun scanning electron microscopy (FEG-SEM). N/Ti ratios of the thin films were determined using both X-ray photoelectron spectrometer (XPS) and Rutherford backscattering spectrometer (RBS). The resistivity of the TiN films was measured by a four-point probe. The hardness of the thin films was obtained from nanoindentation tests. An atomic force microscope (AFM) was used to measure the roughness of the thin films. The results showed that (111) was the dominant preferred orientation in the TiN films for most of the deposition conditions and for all coating angles, especially for film thicknesses greater than 1 μm. Hardness values of TiN films were approximately 28 GPa for film thicknesses close to 0.5 μm and above, and did not vary with the coating angle. The hardness can be correlated to the (111) preferred orientation of the TiN film. The hardness increased with the (111) texture coefficient and leveled off as the texture coefficient approached 1. The packing factor had a linear relationship with the film thickness. Resistivity decreased with increasing thickness and increasing packing factor for all coating angles. At a similar thickness or packing factor, specimens coated at angles different from 0° had a much higher resistivity than those coated at 0°.