溶胶—凝胶法制造的稀土的掺杂低损耗单模光纤

采用溶胶－凝胶法（ｓｏｌ－ｇｅｌ）进行稀土离子掺杂，在Ｅｒ＾３＋掺杂的Ａｌ２Ｏ３－ＳｉＯ２玻璃单模光纤中已重复性地获得１．１５μｍ波长区小于２ｄＢ／ｋｍ的最低光损耗。以该技术成功地在光纤中进行了宽浓度范围的稀土掺杂。已发现，以Ｓｏｌ－ｇｅｌ浸渍涂复厚膜制取低损耗光纤关键在于能够制成始终无裂纹膜的工艺技术。     

GaAlAs激光器腔面减反射涂层

通过对波长９１０ｎｍ ＧａＡｓ／ＧａＡｌＡｓ激光器谐振腔面蒸镀ＺｒＯ２膜的工艺过程，从理论和实验上分析了涂层特性，透射率由无膜时６２％提高到蒸镀膜后的９４％以上，提高了激光器的激光输出功率和工作寿命，对器件端面起到了保护作用。     

GaAlAs激光器腔面减反向涂层的研究

通过对波长９１０ｎｍＧａＡｓ－ＧａＡｌＡｓ激光器谐振腔面蒸镀ＺｒＯ２膜的工艺过程，从理论和实验上分析涂层特性，透射率由无膜时６２％提高到９４％以上，提高了激光输出功率和工作寿命，对器件端面起到了保护作用。     

GaAlAs激光器腔面减反射涂层的研究

通过对波长９１０ｎｍＧａＡｓ－ＧａＡｌＡｓ激光器谐振腔面蒸镀ＺｒＯ＿２膜的工艺过程，从理论和实验上分析涂层特性，透射率由无膜时６２％提高到９４％以上，提高了激光输出功率和工作寿命，对器件端面起到了保护作用。     

低损耗玻璃光波导的溶胶-凝胶法制备

采用溶胶－凝胶（Ｓｏｌ－ｇｅｌ）技术制备了ＳｉＯ２－ＴｉＯ２低损耗平面光波导,在６３３ｎｍ处的传输损耗为０．５７ｄＢ／ｃｍ。同时在硅基板上制备了脊型Ｙ形波导分束器,分束比为１１。     

GaAs衬底层选择性腐蚀技术

本文在ＧａＡｓＧａＡｌＡｓ选择性腐蚀的基础上进行了腐蚀ＧａＡｓ衬底层获得ＧａＡ／ＧａＡｌＡｓ外延层薄膜的二次腐蚀技术。最终选用了Ｃ３Ｈ４（ＯＨ）（ＣＯＯＨ）３．Ｈ２Ｏ－Ｈ２Ｏ２系选择性腐蚀液和Ｈ２ＳＯ４－Ｈ２Ｏ２系腐蚀液，获得了快速，可控制，重复性好的可全部可局部去除衬底的腐蚀方法。     

用sol-gel法在不锈钢基片上制备TiO2薄膜

介绍利用钛酸丁酯为前驱液, 用ｓｏｌ－ｇｅｌ法在不锈钢基片上制备ＴｉＯ２ 薄膜。研究分析了冰醋酸、乙酰丙酮等添加物对溶胶性能的影响,对制备在不锈钢基片上的ＴｉＯ２ 薄膜进行ＸＲＤ分析,并检测薄膜的阻－温特性、Ｖ－Ｉ特性、绝缘强度等电学特性。实验显示添加一定比例的Ｈ２Ｏ、冰醋酸、乙酰丙酮, 可以得到长时间不胶凝、性能稳定的溶胶,通过适当工艺, 能在金属基片上制备出致密、不开裂、电阻率为１０５ ～１０６ Ω·ｃｍ 的ＴｉＯ２ 薄膜。     

Er,O离子共注入GaAs的二次离子质谱的研究

在Ⅲ－Ⅴ族半导体ＧａＡｓ外延层上共注入Ｅｒ和Ｏ离子（ＧａＡｓ：Ｅｒ，Ｏ）．经面对面优化退火后，光致发光（ｐｈｏｔｏｌｕｍｉｎｅｓｃｅｎｃｅ－ＰＬ）谱中观测到对应Ｅｒ３＋第一激发态到基态４Ｉ１３／２－４Ｉ１５／２跃迁，其相对强度较单注入Ｅｒ的ＧａＡｓ（ＧａＡｓ：Ｅｒ）增强１０倍，且谱线变窄．从二次离子质谱（ＳｅｃｏｎｄａｒｙＩｏｎＭａｓＳｐｅｃｔｒｏｍｅｔｒｙ－ＳＩＭＳ）和卢瑟福背散射实验给出退火前后Ｅｒ在ＧａＡｓ：Ｅｒ样品中的剖面分布．ＳＩＭＳ测量分别给出Ｏ注入前后Ｅｒ和Ｏ在ＧａＡｓ：Ｅｒ，Ｏ中的深度剖面分布，分析表明Ｅｒ和Ｏ共注入后形成光学激活有效的发光中心．     

GaAs／Al_xGa_（1－x）As多量子阱掩埋条形激光器

利用ＭＢＥ生长的ＧａＡｓ／ＡｌｘＧａ１－ｘＡｓ折射率渐变－分别限制－多量子阱材料（ＧＲＩＮ－ＳＣＨ－ＭＱＷ），经液相外延二次掩埋生长，制备了阈值最低达２．５ｍＡ（腔面未镀膜），光功率室温连续输出可达１５ｍＷ／面的半导体激光器．经腔面镀膜后，器件已稳定工作４５００多小时．     

固体C_(60)/p-GaAs异质结的整流特性和界面电子态

我们将Ｃ６０膜淀积在ｐ－ＧａＡｓ〈１００〉衬底上，做成了固体Ｃ６０／ｐ－ＧａＡｓ异质结并对其电学性质做了研究．异质结的理想因子接近于１，在偏压为±１Ｖ时，其整流比大于１０６倍．在正向偏压固定的情况下，结电流的对数与温度倒数成线性函数关系，从关系中求出异质结有效势垒高度为０．６３ｅＶ．用深能级瞬态谱（ＤＬＴＳ）技术在Ｃ６０／ｐ－ＧａＡｓ界面上观测到一个空穴陷阱，其能级为ＧａＡｓ价带之上０．４５ｅＶ，密度为２．４×１０１１／ｃｍ２．这样少的界面态存在于Ｃ６０／ｐ－ＧａＡｓ界面上可能意味着Ｃ６０膜对ＧａＡｓ表面     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.