2英寸GaAs快速热退火技术研究

为配合２０００门ＧａＡｓ超高速门列及ＧａＡｓ超高速分频器等２英寸ＧａＡｓ工艺技术研究，开展了２英寸ＧａＡｓ快速热退火技术研究，做出了阈值电压为０～０．２Ｖ，跨导大于１００ｍＳ／ｍｍ的Ｅ型ＧａＡｓＭＥＳＦＥＴ和夹断电压为－０．４～－０．６Ｖ，跨导大于１００ｍＳ／ｍｍ的低阈值Ｄ型ＧａＡｓＭＥＳＦＥＴ。     

用于GaAs贯穿注入和包封退火的AlN薄膜

用直流反应溅射淀积的ＡｌＮ薄膜包封介质对ＧａＡｓ进行了贯穿注入和包封退火，用电化学Ｃ－Ｖ法测量载流子的分布，实验结果与ＴＲＩＭ模拟结果符合得很好，用５０ｎｍ的ＡｌＮ包封进行贯穿注入和退火，得到了较小的标准偏差，较陡峭的载流子分布和较高的激活率，应用ＡｌＮ包封层后，当注入能量１８０ｋｅＶ，注入剂量７．５×１０＾１３ｃｍ＾－２时，所得到的最高载流子浓度为１．８４×１０＾１８ｃｍ＾－１样品方块电阻为１１     

快速热退火制备多晶硅薄膜的研究

采用等离子体增强化学气相沉积法(PECVD)沉积非晶硅薄膜,然后在快速热退火炉中进行退火。研究了升温速率、降温速率对晶化的影响。结果表明:退火中,升温速率越大,越不利于晶核的形成;降温速率较小时(100℃/60s),形成的晶粒尺寸较小,晶化情况较好,晶化率估算达64.56%。     

快速退火BF+注入非晶硅薄膜的显微分析

将具有能量９２ｋｅ Ｖ、剂量１×１０１５／ｃｍ ２ 的 Ｂ Ｆ＋ 注入由 Ｐ Ｅ Ｃ Ｖ Ｄ 方法制备的ａ Ｓｉ∶ Ｈ 薄膜中,然后用功率为 ６０ Ｗ 、束斑直径 ０２ｃｍ 的 Ｃ Ｗ Ｃ Ｏ２ 激光器进行 １０ｓ 快速退火。再用扫描电子显微镜（ Ｓ Ｅ Ｍ）进行显微形貌观察。分析结果指出：由于 Ｂ Ｆ＋ 的注入,使ａ Ｓｉ∶ Ｈ 薄膜中产生了多重结构缺陷,其表面轮廓是类似矩形和方形的图形;发现退火中的晶化是从这些缺陷的棱边开始。最后对晶化过程和机理进行了讨论。     

GaAsVHSIC的离子注入和快速热退火的均匀性研究

研究了改变注入角、ｐ型埋层注入及红外快速热退火对ＧａＡｓＩＣ有源层均匀性的影响，得到了表面形貌好、大面积均匀性良好的注入掺杂有源层。     

2英寸GaAs快速热退火技术研究

为配合２０００门ＧａＡｓ超高速门阵列及ＧａＡｓ超高速分频器等２英寸ＧａＡｓ工艺技术研究，开展了２英寸ＧａＡｓ快速热退火技术研究。做出了阈值电压为０～０．２Ｖ，跨导大于１００ｍＳ／ｍｍ的Ｅ型ＧａＡｓＭＥＳＦＥＴ和夹断电压为－０．４～－０．６Ｖ，跨导大于１００ｍＳ／ｍｍ的低阈值Ｄ型ＧａＡｓＭＥＳＦＥＴ。     

Si~+/B~+双注入单晶硅的快速热退火

用四探针法、扩展电阻法、背散射沟道谱和二次离子质谱等测试分析手段研究了Ｓｉ＋ ／Ｂ＋ 双注入单晶硅的快速热退火行为。结果表明：Ｓｉ＋ 预非晶化注入能有效地抑制注入硼原子的沟道效应;快速热退火Ｓｉ＋ ／Ｂ＋ 注入样品,其注入损伤基本消除,残留二次缺陷少,硼原子电激活率高;优化与控制快速热退火条件和Ｓｉ＋ ／Ｂ＋ 注入参数,制备出了电学特性优良的浅ｐ＋ ｎ 结,其二极管反偏漏电流仅为１．９ ｎＡ·ｃｍ － ２（－ １．４Ｖ）。     

铍注入锑化铟快速热退火的研究

借助ＳＩＭＳ、ＡＥＳ、ＲＢＳ和ＴＥＭ对Ｂｅ注入ＩｎＳｂ的快速热退火特性进行了深入的研究．Ｂｅ注入能量为１００ｋｅＶ，注人剂量为５×１０１４ｃｍ－２．快速热退火温度范围为３００—５００℃，退火时间为３０—６０秒．结果表明，快速退火后，Ｂｅ注入分布剖面的内侧不存在再分布，但峰值浓度有不同程度的降低，表面存在Ｂｅ的外扩散．３５０℃退火，Ｂｅ注入ＩｎＳｂ的晶体损伤基本消除，ＩｎＳｂ表层不存在化学配比的偏离．退火温度超过３５０℃，ＩｎＳｂ表层发生热分解，产生Ｓｂ的耗尽，形成由Ｉｎ、Ｓｂ及其氧化物组成的复杂结构．     

用于GaAs贯穿注入和包封退火的AIN薄膜

用直流反应溅射淀积的AIN薄膜作包封介质对GaAs进行了贯穿注入和包封退火。用电化学C－V法测量了载流子的分布。实验结果与TRIM模拟结果符合得很好。用50nm的AIN包封进行贯穿注入和退火，得到了较小的标准偏差，较陡峭的载流子分布和较高的激活率。应用AIN包封层后，当注入能量180keV，注入剂量7．5×10~13cm~－2时，所得到的最高载流子浓度为1．84×10~18cm~－3，样品方块电阻为118Ω／□。     

FLUORINE BEHAVIOR IN BF_2~+ IMPLANTED POLYSILICON FILMS SUBJECTED TO RAPID THERMAL ANNEALING

The physical and electrical properties of BF_2~+ implanted polysilicon films subjectedto rapid thermal annealing(RTA)are presented.It is found that the out diffusion of F and itssegregation at polysilicon/silicon oxide interface during RTA are the major causes of F anomalousmigration.Fluorine bubbles were observed in BF_2~+ implanted samples at doses of 1×10~(15) and5×10~(15)cm~(-2) after RTA.     

Fluorine behavior in BF 2 + implanted polysilicon films subjected to rapid thermal annealing

The physical and electrical properties of BF ₂ ⁺ implanted polysilicon films subjected to rapid thermal annealing (RTA) are presented. It is found that the out diffusion ofF and its segregation at polysilicon/silicon oxide interface during RTA are the major causes ofF anomalous migration. Fluorine bubbles were observed in BF ₂ ⁺ implanted samples at doses of 1×10¹⁵ and 5×10¹⁵ cm⁻² after RTA.     

质子注入和快速退火对GaAs／AlGaAs量子阱红外探测器的影响

利用质子注入和快速退火技术改变GaAs/AlGaAs 量子阱能级分布,使量子阱红外探测器的光电特性发生变化,在较大地移动了探测波长的同时,探测器的响应率、探测率以及暗电流特性也发生相应变化.在质子注入剂量为2.5×10     

快速热退火对锑化铟表层化学配比的影响

锑化铟是一种窄禁带化合物半导体。近几年,它作为3～5μm红外探测器阵列的一种材料受到广泛的重视。为了制备高质量的锑化铟PN结光电二极管,铍注入与快速热退火(RTA)技术相结合是一种最佳的选择。本文借助俄歇电子能谱(AES)对在快速退火条件下锑化铟表层化学配比的偏离进行了系统的研究。     

砷离子注入CdTe薄膜热退火效应的共振喇曼与荧光光谱研究

应用共振喇曼和荧光光谱系统地研究了Ａｓ离子注入ＣｄＴｅＭＢＥ外延膜的热退火行为。发现随着退炎温度升高至４４０℃，其晶格恢复和缺陷态消除得最完整当ＴＡ高于４４０℃，晶格质量陡峭地下降，ＴＡ越高，越多的Ａｓ占据Ｔｅ位作为Ｔｅ位受主，样品表现为更小的补系数和更高的空穴浓度。     

注硅不掺杂半绝缘GaAs中的深能级缺陷

用DLTS法对经两步快速热退火(RTA)后的注硅不掺杂SI-GaAs中的缺陷进行了研究。确定了激活层中存在着两个电子陷阱组(以主能级ET1、ET2标记)及其电学参数的深度分布。在体内,ET1=Ec0.53eV,n=2.310-16cm2;ET2=Ec0.81eV,m=9.710-13cm2;密度典型值为NT1=8.01016cm-3,NT2=3.81016cm-3;表面附近,ET1=Ec0.45eV,NT1=1.91016cm-3;ET2=Ec0.71eV,NT2=1.21016cm-3,分别以[AsiVAs,AsGa]和[VAsAsiVGaAsGa]等作为ET1和ET2的缺陷构型解释了它们在RTA过程中的行为。     

4 nm Gate dielectrics prepared by RTP low pressure oxidation in O2 and N2O atmosphere

Extensive experimental results are reported about the rapid thermal O₂ and N₂O oxidation of silicon at pressures as low as 25 Torr. The decrease of the oxidation rate in N₂O is smaller than in O₂ atmosphere with decreasing pressure. Therefore, almost equal oxidation rates for the oxidation in O₂ and N₂O atmospheres were found at the lowest investigated pressure of 25 Torr. In addition, the low pressure oxides show better oxide homogeneities across the wafer; this is especially true for N₂O oxides. Ultra-thin (down to 4 nm) dielectric films for application in metal-oxide-semiconductor (MOS) devices have been fabricated and electrically characterized. The low pressure oxides exhibit higher charge to breakdown values and dielectric breakdown fields than atmospheric pressure oxides.     

BF2+注入多晶硅栅的SIMS分析

文本采用SIMS技术,分析了BF₂⁺注入多晶硅栅退火前后F原子在多晶硅和SiO₂中的迁移特性。结果表明,80keV,2×10¹⁵和5×10¹⁵cm^-2 BF₂⁺注入多晶硅栅经过900℃,30min退火后,部分F原子已扩散到SiO₂中。F在多晶硅和SiO₂中的迁移行为呈现不规则的特性,这归因于损伤缺陷和键缺陷对F原子的富集作用。     

Comparison of p–n junction formed by BF2 and B implantation in silicon microstrip detector with low and high thermal budget: impact of fluorine on electrical characteristics

The influence of crystal damage on the electrical properties and the doping profile of the implanted p⁺–n junction has been studied at different annealing temperatures using process simulator TMA-SUPREM4. This was done by carrying out two different implantations; one with implantation dose of 10¹⁵ BF₂⁺ ions/cm² at an energy of 80 keV and other with 10¹⁵ B⁺ ions/cm² at 17.93 keV. Substrate orientation 1 1 1 of phosphorus-doped n-type Si wafers of resistivity 4 kΩ cm and tilt 7° was used, and isochronally annealing was performed in N₂ ambient for 180 min in temperature range between 400°C and 1350°C. The diode properties were analysed in terms of junction depth, sheet resistance. It has been found that for low thermal budget annealing, boron diffusion depth is insensitive to the variation in annealing temperature for BF₂⁺-implanted devices, whereas, boron diffusion depth increases continuously for B⁺-implanted devices. In BF₂⁺-implanted devices, fluorine diffusion improves the breakdown voltage of the silicon microstrip detector for annealing temperature upto 900°C.For high thermal budget annealing, it has been shown that the electrical characteristics of BF₂⁺-implanted devices is similar to that obtained in B⁺-implanted devices.