100 MeV质子降能材料的选择研究

降能器对于提升质子单粒子效应(SEE)地面模拟试验的效率具有重要意义,而降能材料的选择是降能器设计中的首要问题。计算了100 MeV质子在4种常见降能材料铍、石墨、铝、铜中产生的能量岐离、角度岐离、中子本底以及感生放射性等对质子SEE地面模拟试验有影响的4个方面,其中感生放射性的计算中包含了降能过程在材料中产生的放射性核素种类、活度及残余剂量率。根据以上计算结果,并结合质子SEE地面模拟试验的要求,在降低相同的能量这一情况下,对4种材料作为100 MeV质子降能材料的适用性进行了分析比较,最终选择铝作为100 MeV质子的降能材料,并将应用在中国原子能科学研究院100 MeV质子回旋加速器的质子SEE地面模拟试验装置的降能器设计中。     

230 MeV超导回旋加速器降能器中子能谱模拟

正在质子治疗系统中,回旋加速器产生的质子能量为230 MeV,最大流强为1μA,但是在治疗终端需要的质子能量在230～70 MeV之间,因此需配套建设能量选择系统,以便获得能量连续可调的质子束流。降能器是能量选择系统的核心部件,质子穿过降能器时与降能器材料发生相互作用而损失能量,会产生较强的辐射场,其中中子辐射占主要地位,在辐射防护过程中对屏蔽外剂量贡献也主要由高能中子引起,因此在设计降能器时对中子能谱分布十分关注。为了获得较为详尽的中子能谱分布,采用蒙     

质子在氮化镓中产生位移损伤的Geant4模拟

材料受到辐照时产生的位移损伤会导致其微观结构发生变化,从而使其某些使用性能退化,影响其使用效率,减短其使用寿命。利用Geant4模拟了质子在氮化镓中的输运过程,计算了1、10、100、500 MeV能量质子入射氮化镓材料产生的初级撞出原子的种类、能量信息及离位原子数。获得了10 MeV质子产生的位移缺陷分布;计算了4种能量质子入射氮化镓材料产生的非电离能量损失(NIEL);研究了质子产生位移损伤过程的影响要素。研究发现,入射质子能量对其在材料中产生的初级撞出原子的种类、能量、离位原子数等信息有着非常大的影响;单位厚度所沉积NIEL随着入射质子能量的增大而减小;10 MeV质子入射氮化镓所产生的离位原子数随入射深度的增加而增加,但在超出其射程范围以外有一巨大回落;能量并不是影响质子与氮化镓靶材料相互作用的唯一因素。     

230 MeV质子束经降能器后散射特性的数值模拟

正进行质子治疗时,根据肿瘤本身的深度和厚度,可选用不同能量的质子。目前都采用质子通过介质,在介质中受阻而降低本身速度,从而达到降能的目的。为了分析束流通过不同材料降能器后散射特性,首先进行了理论上的数值计算,再使用MonteCarlo软件FLUKA和SRIM进行模拟,并与理论计算结果进行比较。模拟内容包括降能器厚度、能散、传输效率和发射度增长,材料包括现通常使用的石墨、铍和碳化硼。通过对模拟结果的分析,得到以下结论:230 MeV质子束降能器降至不同能量所需降能器厚度,铍和石墨无明显差异,比碳化硼高出约     

CIAE Application of Patent in 2004

高气压组织等效电离室内中子（尤其是高能中子）的输运过程是中子、光子、质子以及电子等粒子的复杂的偶合输运过程，使用Geant4程序模拟该输运过程，并在Linux6．2操作系统下利用Geant4软件计算了有铝层和无铝层，次外层材料为A—150组织等效材料，厚度分别为2、5、10、20mm，平行入射的单能中子的能量分别为1、100、500keV和2、10、14、20、30、50、80、100MeV时，以及有铝层、次外层材料为聚乙烯，厚度为5mm，平行入射的单能中子的能量分别为0．0253eV、100eV、lkeV、100keV、500keV、2MeV、10MeV、14MeV、20MeV、30MeV、100MeV时的中子沉积能量。在中高能入射中子能量条件下，计算结果与实验数据基本符合。     

中国原子能科学研究院100 MeV质子单粒子效应辐照装置试验能力研究

为检验中国原子能科学研究院100 MeV质子回旋加速器（CY CIAE-100）建立的单粒子效应（SEE）辐照装置的试验能力和数据测量的准确性和可靠性,利用欧洲航天局（ESA）研制的SEU监测器进行了校核试验。试验中选取多个不同能量点对SEU监测器进行辐照获取了相应的单粒子翻转（SEU）截面,同时对束流的均匀性进行了检验。SEU监测器SEU截面测试结果与其在国外其他加速器,如瑞士PSI、比利时LIF等所获得的数据基本一致。校核试验验证了中国原子能科学研究院100 MeV质子回旋加速器SEE试验能力以及数据测量的准确性。     

质子重离子加速器治疗中感生放射性的测量与防护

质子重离子治疗是当前国际公认最具优势的肿瘤放射治疗技术.由于质子重离子束能量较高,在束流损失能量过程中产生的次级中子使周围物质活化,从而产生感生放射性,可对工作人员和患者的健康带来威胁,因此需要重视与之相关的辐射防护.本文探讨质子重离子加速器治疗过程中感生放射性的产生原因与分布,通过蒙特卡罗模拟和测量得到次级中子的能量...     

C276合金质子辐照损伤模拟及活化分析

C276合金是先进核电站燃料元件包壳的候选材料之一。本工作采用TRIM程序分别计算10和20MeV质子辐照C276所产生的辐照损伤,比较分析能损、离位原子、DPA等参数分布。同时使用FISPACT-2007程序进行活化计算,对放射性活度、衰变余热及接触剂量率等参数进行了详细分析。结果表明：辐照损伤主要来自电子能损的贡献,高能质子与靶原子发生碰撞的几率较低。C276经同种能量质子辐照后,活化特性随着辐照时间的增长而增加。辐照时间相同时,高能质子会对材料产生更大的影响。本工作为后续的辐照损伤分子动力学模拟及计划开展的质子辐照实验提供支持。     

基于GeTHU测量确定natPb(p,x)207Bi和natPb(p,x)194Hg的反应截面

加速器驱动次临界系统(Accelerator Driven Sub-critical System,ADS)是最具潜力的下一代核能系统选型之一，准确评估ADS散裂靶内产生的长寿命放射性核素含量是应用研究中的重要课题，利用质子活化法可以有效评价质子与散裂靶材料发生相互作用产生长寿命核素的反应截面。4个质子辐照天然铅样品分别被能量为40 MeV、70 MeV、100 MeV和400 MeV的质子照射90 min、75 min、40 min和25 min，在冷却约20 a后，利用中国锦屏地下实验室(China Jinping Underground Laboratory,CJPL)的超低本底γ谱仪GeTHU进行测量，使用SAGE(Simulation and Analysis for Germanium Experiments)模拟框架计算了GeTHU的探测效率，测定了能量为40 MeV、70 MeV、100 MeV和400 MeV质子与天然铅发生^natPb(p,x)²⁰⁷Bi和^natPb(p,x)¹⁹⁴...     

2 用于放射性核束设施驱动加速器的100MeV强流H^-回旋加速器

北京放射性核束装置，简称为BRIF，是一个新的基于放射性核束装置的加速器工程。该工程由以下几个部分组成：100MeV回旋加速器、在线同位素分离系统、现有的串列加速器注入器改造、超导直线增能器、各种不同的物理实验终端和一个同位素生产研究靶站。作为驱动加速器，100MeV的H^-回旋加速器能够提供75～100MeV、200～500μA以上的质子束流。对于最终能量不高于100MeV，束流强度低于lmA的回旋加速器，选择紧凑型磁铁，采用加速H^-、剥离引出的技术路径，将使得加速器结构更小，也更便宜。     

AN APPLICATION OF IPM POTENTIAL IN CALCULATING THE ENERGY STRAGGLING FOR FAST PROTON BEAMS

Energy straggling for fast proton beams in Ni, Al, Ti, Cu, In and Sb solids and N, O, F, B, S, Cl and air gases were calculated using an effective IPM potential which contains an adjustable parameter. The energy and Z_2 (target atomic number) dependence of the energy straggling for proton in materials are Obtained when Bonderup and Hvelplund's formulation is used. The results are compared with some experiments in detail, and show in good agreement with them.     

Stopping cross-section and energy straggling of protons in SiC obtained by nuclear resonant reaction of protons with 12C and 28Si

In order to evaluate stopping cross-section and energy straggling of protons in compound material SiC and its constituents C and Si, resonant backscattering spectra have been measured using proton beams in an energy range 4.9–6.1 MeV per a 100 keV step. We have observed two sharp nuclear resonances at proton energies of 4.808 MeV by ¹²C and 4.879 MeV by ²⁸Si. By systematic analyses of the resonance peak profiles, i.e., energy shift of the peak position and broadening of the peak width, the values of the stopping cross-section and the energy straggling have been deduced to be compared with SRIM-2006 and Bohr’s prediction.     

Stopping power and energy straggling of protons in graphite and amorphous carbon obtained from a resonance in BS spectra

Backscattering (BS) spectra with a sharp 4.8-MeV resonance for carbon targets have been measured using proton beams in an energy range 4.85-6.1 MeV per 100-keV step. By systematic analyses of the resonance peak profiles, values of stopping power and energy straggling have been deduced for proton energies from 0.8 to 3.4 MeV which corresponds to a penetration depth of 88 μm. In particular, to investigate the difference in stopping power and straggling caused by target inhomogeneity, we used two target materials which were highly oriented pyrolytic graphite (HOPG, 2.26 g/cm³) as a homogeneous material and amorphous carbon (1.73 g/cm³) as an inhomogeneous material. We describe a method of measuring stopping power and straggling using a resonance in the BS spectra. The stopping powers obtained are compared with the values determined by SRIM-2006. Moreover, collision straggling and a density straggling due to the inhomogeneity of the target materials are evaluated from the width broadening of resonance peaks.     

Single-event effects induced by medium-energy protons in 28 nm system-on-chip

Single-event effects(SEEs) induced by medium-energy protons in a 28 nm system-on-chip(So C) were investigated at the China Institute of Atomic Energy. An on-chip memory block was irradiated with 90 MeV and70 MeV protons, respectively. Single-bit upset and multicell upset events were observed, and an uppermost number of nine upset cells were discovered in the 90 MeV proton irradiation test. The results indicate that the SEE sensitivities of the 28 nm SoC to the 90 MeV and 70 MeV protons were similar. Cosmic Ray Effects on Micro-Electronics Monte Carlo simulations were analyzed, and it demonstrates that protons can induce effects in a 28 nm SoC if their energies are greater than 1.4 MeV and that the lowest corresponding linear energy transfer was 0.142 MeV cm~2 mg~(-1). The similarities and discrepancies of the SEEs induced by the 90 MeV and 70 MeV protons were analyzed.     

Scaling of SEU mapping and cross section, and proton induced SEU atreduced supply voltage

New experimental study of heavy ion and proton induced SEU at reduced voltage (i.e. reduced critical charge) reveals interesting results. It is shown that the heavy ion cross section and microprobe mapping scale like the threshold LET and the parameter, which is almost invariant under bias changes, is the effective charge collection depth. For studying proton induced SEU and surface-barrier-detector spectra we use protons with energies from 5.6 to 300 MeV. The results are analyzed in view of the processes involved in low energy deposition by protons. Detailed calculations show the importance of straggling in proton direct ionization which might be the leading process in very sensitive devices like photodiodes     

An experimental evaluation of spatial distribution for deeply penetrating protons in carbon material

The peak profile of the 4.8-MeV resonance by the ¹²C(p,p)¹²C reaction in backscattering geometry has been analyzed to examine two kinds of stragglings of proton, i.e. the depth straggling in the incoming path and the energy loss straggling in the outgoing path. The analysis, which is combined with existing theoretical treatments for the stopping process and the energy loss straggling, has made it possible to deduce the penetration depth and its spread at the resonance position in carbon materials. The present method, as a new tool for direct inspection of ion beams inside target material, is explained in detail.     

在线同位素分离器靶-源中靶材料的放射性活度

用LCS+CBURN程序计算在线同位素分离器靶-源中铅、钨、铜、铝、石墨靶材料以及结构材料水、不锈钢在100MeV、200μA强流质子束照射下所产生的放射性核素活度以及γ射线强度随时间的变化,以便为靶的设计、更换以及后期处理提供一定的设计依据。所选靶材料在照射后会产生长寿命放射性核素氚,其中,铅靶材料中还会产生¹³¹I。     

基于GEANT4模拟分析不同能量质子在CMOS APS中的位移损伤研究

本文针对图像传感器在空间辐射环境中电学性能退化问题,采用蒙特卡罗方法基于互补金属氧化物半导体（CMOS）APS器件建立几何模型,开展不同能量质子与靶原子的相互作用过程研究。通过研究不同能量质子辐照下初级碰撞原子的能谱分布及平均位移损伤能量沉积随质子能量的变化,讨论不同能量质子及空间站轨道质子能谱下在CMOS APS器件中位移损伤的差异。计算结果表明：随着入射质子能量的增大,辐照产生的初级碰撞原子的最大能量及核反应产生的初级碰撞原子（PKA）对位移损伤能量沉积的贡献逐步增加;对于大于1 MeV的质子辐照,CMOS APS器件中位移损伤研究可忽略氧化层的影响;不同能量的质子和CREME96程序中空间站轨道质子能谱下器件中位移损伤能量沉积分布结果显示,35 MeV质子与该空间站轨道质子能谱在器件敏感区中产生的总位移损伤能量沉积相近。该工作对模拟空间站轨道质子辐照下电子器件暗电流增长研究中辐照实验的能量选择,提供了参考依据。     

Energy loss of degrader in SC200 proton therapy facility

The proton beam energy determines the range of particles and thus where the dose is deposited. According to the depth of tumors, an energy degrader is needed to modulate the proton beam energy in proton therapy facilities based on cyclotrons, because the energy of beam extracted from the cyclotron is fixed. The energy loss was simulated for the graphite degrader used in the beamline at the superconducting cyclotron of 200 MeV in Hefei(SC200). After adjusting the mean excitation energy of the graphite used in the degrader to 76 eV, we observed an accurate match between the simulations and measurements.We also simulated the energy spread of the degraded beam and the transmission of the degrader using theoretical formulae. The results agree well with the Monte Carlo simulation.