Nd-substituted SrBi2Ta2O9 ferroelectric thin films prepared by radio frequency magnetron sputtering

Nd-substituted SrBi₂Ta₂O₉ (SNBT) thin films are sputtered on Pt/Ta/SiO₂/Si substrates. X-ray diffraction and x-ray photoelectron spectroscopy studies indicate that Nd³⁺ is substituted into the bismuth layered perovskite structure, preferentially at the Sr²⁺ site. The annealed thin film is polycrystalline with plate/needle-like grain microstructure. Secondary ion mass spectrometry results show that elements in SNBT thin film homogeneously distribute along film depth and interfacial diffusion takes place during post annealing. The Nd substitution leads to enhanced remnant polarization (2P_r = 18 μC/cm²) and reduced coercivity (2E_c = 64 kV/cm) at 180 kV/cm measured at 25 °C. After 10¹⁰ switching cycles, around 9% remnant polarization is decreased.     

Ion beam modification of TiO2 films prepared by Cat-CVD for solar cell

The effects of nitrogen ion bombardment on TiO₂ films prepared by the Cat-CVD method have been studied to improve the optical and electrical properties of the material for use in Si thin film solar cells. The refractive index n and the dark conductivity of the TiO₂ film increased with irradiation time. The refractive index n of the TiO₂ film was changed from 2.1 to 2.4 and the electrical conductivity was improved from 3.4 × 10^− 2 to 1.2 × 10^− 1 S/cm by the irradiation. These results are due to the formation of Ti-N bonds and oxygen vacancies in the film.     

Protection of polymer from atomic-oxygen erosion using Al2O3 atomic layer deposition coatings

Thin films of Al₂O₃ grown using atomic layer deposition (ALD) techniques can protect polymers from erosion by oxygen atoms. To quantify this protection, polyimide substrates with the same chemical repeat unit as Kapton^® were applied to quartz crystal microbalance (QCM) sensors. Al₂O₃ ALD films with varying thicknesses were grown on the polyimide substrates. The ALD-coated polyimide materials were then exposed to a hyperthermal atomic-oxygen beam. The mass loss versus oxygen-atom exposure time was measured in situ by the QCM. Al₂O₃ ALD film thicknesses of ∼ 35 Å were found to protect the polymer from erosion.     

Sb2S3:C/CdS p-n junction by laser irradiation

In this paper, we report laser irradiated carbon doping of Sb₂S₃ thin films and formation of a p-n junction photovoltaic structure using these films. A very thin carbon layer was evaporated on to chemical bath deposited Sb₂S₃ thin films of approximately 0.5 μm in thickness. Sb₂S₃ thin films were prepared from a solution containing SbCl₃ and Na₂S₂O₃ at 27 °C for 5 h and the films obtained were highly resistive. These C/Sb₂S₃ thin films were irradiated by an expanded laser beam of diameter approximately 0.5 cm (5 W power, 532 nm Verdi laser), for 2 min at ambient atmosphere. Morphology and composition of these films were analyzed. These films showed p-type conductivity due to carbon diffusion (Sb₂ S₃:C) by the thermal energy generated by the absorption of laser radiation. In addition, these thin films were incorporated in a photovoltaic structure Ag/Sb₂S₃:C/CdS/ITO/Glass. For this, CdS thin film of 50 nm in thickness was deposited on a commercially available ITO coated glass substrate from a chemical bath containing CdCl₂, sodium citrate, NH₄OH and thiourea at 70 °C. On the CdS film, Sb₂S₃/C layers were deposited. This multilayer structure was subjected to the laser irradiation, C/Sb₂S₃ side facing the beam. The p-n junction formed by p-Sb₂S₃:C and n-type CdS showed V_oc = 500 mV and J_sc = 0.5 mA/cm² under illumination by a tungsten halogen lamp. This work opens up a new method to produce solar cell structures by laser assisted material processing.     

Fabrication and electrochemical characterization of HRP-lipid Langmuir-Blodgett film and its application as an H2O2 biosensor

The formation of horseradish peroxidase-lipid Langmuir-Blodgett film and its applicability as a biosensor have been studied. HRP was spread directly onto the subphase covered with a layer of lipid in LB trough. Our experimental results showed that surface pressure of this film from liquid to solid state ranged between 15 to 25 mN/m. At surface pressure of 25 mN/m, the monolayer was successfully transferred onto the gold surface. In addition, electrochemical properties of this film showed that protein molecules still kept their natural structure and can give a well electrocatalytic activity to H₂O₂. As an H₂O₂ biosensor, this LB film was able to detect concentration of H₂O₂ which were 3 × 10^− 7 M.     

Highly a-oriented SrBi2Ta2O9 thin film on (111) Pt/TiO2/SiO2/Si substrate by eclipse pulsed laser deposition

A highly a-oriented SrBi₂Ta₂O₉ thin film with a polycrystalline structure was deposited on a preferentially oriented (111) Pt/TiO₂/SiO₂/Si substrate by eclipse pulsed laser deposition (PLD) method. The SrBi₂Ta₂O₉ thin film exhibited flat and smooth surface with the surface roughness of about 0.5 nm resulting from reducing particulates generated by on-axis PLD. The SrBi₂Ta₂O₉ thin film showed a good ferroelectric property with the high remanent polarization of 12 μC/cm² and the low coercive electric field of 140 kV/cm. For the highly a-oriented SBT thin film, domain switching and reading were performed by Kelvin probe force microscope (KFM). The KFM data indicate a good ferroelectric property of the highly a-oriented SrBi₂Ta₂O₉ thin film with high KFM signals that reflect ferroelectric polarizations.     

Multiferroic properties of BiFeO3/Bi4Ti3O12 double-layered thin films fabricated by chemical solution deposition

Multiferroic BiFeO₃/Bi₄Ti₃O₁₂ (BFO/BTO) double-layered film was fabricated on a Pt(111)/Ti/SiO₂/Si(100) substrate by a chemical solution deposition method. The effect of an interfacial BTO layer on electrical and magnetic properties of BFO was investigated by comparing those of pure BFO and BTO films prepared by the same condition. The X-ray diffraction result showed that no additional phase was formed in the double-layered film, except BFO and BTO phases. The remnant polarization (2P_r) of the double-layered film capacitor was 100 μC/cm² at 250 kV/cm, which is much larger than that of the pure BFO film capacitor. The magnetization-magnetic field hysteresis loop revealed weak ferromagnetic response with remnant magnetization (2M_r) of 0.4 kA/m. The values of dielectric constant and dielectric loss of the double-layered film capacitor were 240 and 0.03 at 100 kHz, respectively. Leakage current density measured from the double-layered film capacitor was 6.1 × 10^− 7 A/cm² at 50 kV/cm, which is lower than the pure BFO and BTO film capacitors.     

Deposition of WNxCy thin films for diffusion barrier application using the dimethylhydrazido (2) tungsten complex (CH3CN)Cl4W(NNMe2)

Tungsten nitride carbide (WN_xC_y) thin films were deposited by chemical vapor deposition using the dimethylhydrazido (2⁻) tungsten complex (CH₃CN)Cl₄W(NNMe₂) (1) in benzonitrile with H₂ as a co-reactant in the temperature range 300 to 700 °C. Films were characterized using X-ray diffraction (XRD), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy and four-point probe to determine film crystallinity, composition, atomic bonding, and electrical resistivity, respectively. The lowest temperature at which growth was observed from 1 was 300 °C. For deposition between 300 and 650 °C, AES measurements indicated the presence of W, C, N, and O in the deposited film. The films deposited below 550 °C were amorphous, while those deposited at and above 550 °C were nano-crystalline (average grain size < 70 Å). The films exhibited their lowest resistivity of 840 µΩ-cm for deposition at 300 °C. WN_xC_y films were tested for diffusion barrier quality by sputter coating the film with Cu, annealing the Cu/WN_xC_y/Si stack in vacuum, and performing AES depth profile and XRD measurement to detect evidence of copper diffusion. Films deposited at 350 and 400 °C (50 and 60 nm thickness, respectively) were able to prevent bulk Cu transport after vacuum annealing at 500 °C for 30 min.     

The influence of annealing temperatures on the properties of Bi2VO5.5/LaNiO3/Si thin films

Bi₂VO_5.5 ferroelectric thin films were fabricated on LaNiO₃/Si(100) substrate via chemical solution deposition. Ferroelectric and dielectric properties of the thin films annealed at 500-700 °C were studied. The thin film annealed at 700 °C exhibited more favorable ferroelectric and dielectric properties than those annealed at lower temperatures. The values of remnant polarization 2P_r and coercive field E_c for the film annealed at 700 °C are 10.62 µC/cm² and 106.3 kV/cm, respectively. The leakage current of the film is about 1.92 × 10^− 8 A/cm² at 6 V. The possible mechanism of the dependence of electrical properties of the films on the annealing temperature was discussed.     

Irradiation induced effects on Ni3N/Si bilayer system

The irradiation effect in Ni₃N/Si bilayers induced by 100 MeV Au ions at fluence 1.5 × 10¹⁴ ions/cm² was investigated at room temperature. Grazing incidence X-ray diffraction determined the formation of Ni₂Si and Si₃N₄ phases at the interface. The roughness of the thin film was measured by atomic force microscopy. X-ray reflectivity was used to measure the thickness of thin films. X-ray photoelectron spectroscopy has provided the elemental binding energy of Ni₃N thin films. It was observed that after irradiation (Ni 2p_3/2) peak shifted towards a lower binding energy. Optical properties of nickel nitride films, which were deposited onto Si (100) by ion beam sputtering at vacuum 1.2 × 10⁻⁴ torr, were examined using Au ions. In-situ I–V measurements on Ni₃N/Si samples were also undertaken at room temperature which showed that there is an increase in current after irradiation.     

(Sr6N)[CoN2][CN2]2: The first low-valency nitridometalate carbodiimide

The first nitridocobaltate carbodiimide (Sr₆N)[CoN₂][CN₂]₂ has been synthesized from the elements Sr, Co, and graphite powder and NaN₃ (as a nitrogen source). The crystal structure was determined from X-ray single-crystal diffraction data as orthorhombic (space group P2₁2₁2, No. 18, a=9.8807(6) Å, b=14.6474(9) Å, c=3.8569(3) Å, V=558.2 Å³, Z=2, R₁=0.0265, wR₂=0.0383). (Sr₆N)[CoN₂][CN₂]₂ is the first low-valency 3d-transition nitridometalate containing additional [CN₂]²⁻ groups. The crystal structure can be described as an array of rocksalt-like columns of Sr and N linked via common corners and connected by [NCN]²⁻ and [Co^IN₂]⁵⁻ units located within structural channels running along [0 0 1]. The magnetic susceptibility follows the Curie-Weiss law with an effective moment of 3.26 μ_B consistent with two unpaired spins (d⁸, Co^I). The compound is a bad metallic conductor with a resistivity of order 1 mΩ cm at 300 K. Vibrational spectroscopic data support the existence of carbodiimide [NCN]²⁻ species. The Co K-edge X-ray absorption spectra (XAS) of Ca₅[CoN₂]₂ and (Sr₆N)[CoN₂][CN₂]₂ confirm the presence of Co^I within the complex anions.     

Conductive polyaniline capped Fe2O3 composite anode for high rate lithium ion batteries

A composite of Fe₂O₃ capped by conductive polyaniline (PANI) was synthesized by a facile two-step method through combining homogeneous Fe₂O₃ suspension prepared by a hydrothermal method and in-situ polymerization of aniline. As anode material for lithium ion batteries, the Fe₂O₃/PANI composite manifests very large discharge capacities of 1635 mAh g⁻¹, 1480 mAh g⁻¹ at large currents of 1.0 and 2.0 A g⁻¹ (1C and 2C), respectively, as well as good cycling performance and rate capacity. The enhancement of electrochemical performance is attributed to the improved electrical conductivity and effective ion transportation of the composite electrode, in that, PANI keeps the Fe₂O₃ nanorods uniformly connected and offers conductive contact between the electrolyte and the active electrode materials.     

Microstructure and electric properties of (104)/(014)-oriented Bi3.15Nd0.85Ti3O12 films on Pt (111)/Ti/SiO2/Si by sol-gel method

Bi_3.15Nd_0.85Ti₃O₁₂ (BNdT) thin films with predominant (104)/(014) orientation were fabricated directly on (111)Pt/Ti/SiO₂/Si substrates through a sol-gel process. The volume fraction of (104)/(014)-oriented grains in the film was estimated to be about 65% according to X-ray pole figure. The BNdT film is dense and uniform and consists of columnar grains penetrating the whole film thickness. The (104)/(014)-oriented BNdT film capacitors showed excellent ferroelectric properties with 2P_r = 46.4 μC/cm² and E_c ≈ 140 kV/cm. The films also exhibit excellent piezoelectric property, with high piezoelectric coefficient d₃₃ ≈ 17 pm/V.     

Ion irradiation induced amorphization of SnO2 nanoparticles embedded in SiO2

SnO₂ nanoparticles (NPs) of average diameter of ∼10.5 nm, synthesized in SiO₂ using Sn⁻ ions implantation combined with thermal annealing, were irradiated with 1.5 MeV Au²⁺ ions at room temperature. The NP structure was studied as a function of ion fluence by transmission electron microscopy and micro-Raman spectroscopy. Prior to ion irradiation, SnO₂ NPs have been found to exhibit the rutile crystal structure. Upon irradiation, amorphization in the nanocrystals has been seen to increase with increase in ion fluence. In particular, at a fluence of 1 × 10¹⁴ ions cm⁻² we argue for the presence of an amorphous SnO₂ phase. Beyond this fluence, the NPs have been found to dissolve in the matrix. The observed results are explained in the frame work of ion irradiation induced defects production in the NPs as well as in the NP/matrix interface.     

Successful fabrication of bicrystal Si substrates for YBa2Cu3O7 − y Josephson junctions

Bicrystal Si(BiSi) substrates for grain boundary (GB) Josephson junctions (GBJJs) have been fabricated by a direct bonding technique using a hot press method. The fracture strength and structure of the bonding interfaces were investigated to obtain substrates suitable for the junctions. It was found that an increase in the pressure of the hot press improves the reproducibility of the GBJJs. YBa₂Cu₃O_{7 − y} GBJJs were successfully fabricated on Bi-Si substrates with a misorientation angle of 15 ° bonded under a pressure of 90 kgf cm⁻² at 1200 °C in a vacuum of ≈10⁻³ Pa. These junctions showed typical I-V curves described by the RSJ model. The Shapiro steps induced by millimetre wave irradiation of 101 GHz were clearly observed in the I-V curves up to 3 mV, corresponding to at least 1.5 THz (, where e is the unit charge, V the voltage and h Planck's constant).     

Formation of Mn-oxide clusters in Mn-implanted SiO2 probed by soft X-ray emission and absorption spectroscopy

Mn⁺-implanted a-SiO₂-samples were studied with the help of soft X-ray emission and absorption spectroscopy (Si L_2,3 3d3s → 2p_3/2,1/2 and Mn L_2,3 3d4s → 2p_3/2,1/2 emission transitions) using synchrotron excitation. The samples were obtained using a pulsed ion source (ion beam current density ∼2-7 mA/cm², E_impl. = 30 keV, ion fluence ∼2 × 10¹⁷ cm⁻², pulse duration 400 μs) without thermal annealing. It was established that Mn-ion provides a formal valence state 2+, so arranging in implanted a-SiO₂ the low-sized MnO antiferromagnetic clusters probably of crystalline type. The data obtained well coincides with the electronic spin resonance results reported earlier.     

Growth of β-FeSi2 thin films on β-FeSi2 (110) substrates by molecular beam epitaxy

We have investigated the preparation of β-FeSi₂ substrate and growth condition of β-FeSi₂ thin film on β-FeSi₂ (110) substrate by molecular beam epitaxy. The surface of the substrate was prepared by a wet-etching using HF(50%):HNO₃(60%):H₂O = 1:1:5 solution at 25 °C. It is clear that the optimal etching period to obtain a flat surface was 3 min. The β-FeSi₂ thin film with streak RHEED pattern was obtained at Si/Fe flux ratio of 2.9. Average surface roughness (Ra) of the β-FeSi₂ film was about 0.5 nm in 5 × 5 μm² area.     

Molecular layer deposition of ZrO2-based organic-inorganic nanohybrid thin films for organic thin film transistors

Molecular layer deposition (MLD) technique can be used for preparation of various organic-inorganic nanohybrid superlattices at a gas-phase. The MLD method is a self-controlled layer-by-layer growth process under vacuum conditions, and is perfectly compatible with the atomic layer deposition (ALD) method. In this paper, we fabricated a new type organic-inorganic nanohybrid thin film using MLD method combined with ALD. A self-assembled organic layer (SAOL) was formed at 170 °C using MLD with repeated sequential adsorptions of CC terminated alkylsilane and zirconium hydroxyl with ozone activation. A ZrO₂ inorganic nanolayer was deposited at the same temperature using ALD with alternating surface-saturating reactions of Zr(OC(CH₃)₃)₄ and H₂O. The prepared SAOL-ZrO₂ organic-inorganic nanohybrid films exhibited good mechanical stability, excellent insulating properties, and relatively high dielectric constant k (~ 16). They were then used as a 23 nm-thick dielectric for low voltage pentacene-based thin film transistors, which showed a maximum field effect mobility of 0.63 cm²/V s, operating at − 1 V with an on/off current ratio of ~ 10³.     

Synthesis and characterization of a new organic dihydrogenomonophosphate [3,5-(CH3O)2C6H3NH3]2(H2PO4)2

Chemical preparation, crystal structure, calorimetric studies and spectroscopic investigation are given for a new organic cation dihydrogenomonophosphate [3,5-(CH₃O)₂C₆H₃NH₃]₂(H₂PO₄)₂. This compound is triclinic with the following unit cell parameters: a=9.030(6) Å, b=16.124(5) Å, c=8.868(3) Å, α=75.04(3)°, β=110.71(4)°, γ=104.61(1)°, Z=4, V=1148.0(1) Å³, Z=2 and ρ_cal.=1.454 g cm⁻³. Crystal structure was solved and refined to R=0.04, 2752 independent reflections. The atomic arrangement can be described as inorganic layers of H₂PO₄⁻ anions parallel to planes, between which are located the organic groups. Solid-state and MAS-NMR spectroscopies are in agreement with the X-ray structure. Ab initio calculations allow the attribution of the phosphorous and carbon signals to the independent crystallographic sites and to the various atoms of the organic groups.     

Ion beam induced interface mixing of Ni on PTFE bilayer system studied by quadrupole mass analysis and electron spectroscopy for chemical analysis

We have investigated interfacial chemistry in a 100 nm Ni on PTFE (polytetrafluoroethylene) bilayer system induced by 120 MeV Au ions with fluences varying from 1 × 10¹² to 5 × 10¹³ ions/cm². In-situ quadrupole mass analysis (QMA) shows emission of Fluorine (F) and different fluorocarbons (C_xF_y) such as CF, CF₃, C₂F₃ etc. during irradiation. Electron spectroscopy for chemical analysis (ESCA) studies show that Ni reacts with chemically reactive species such as F⁻/F and C_xF_y ions or radicals emitted during irradiation forming NiF₂ and metal-polymer complexes (-CFNi-). Rutherford backscattering spectrometry (RBS) was used to analyze the atomic transport at the interface and strong interface mixing is observed at the ion fluence 5 × 10¹³ ions/cm². Atomic force microscopy (AFM) studies before and after irradiation show that surface roughness is increased from 6.9 to 12.4 nm with increasing fluence. Observed results have been explained on the basis of the chemical reactions taking place within molten ion tracks in the polymer and hot zones around the ion paths created in the Ni film. The studies show that swift heavy ion irradiation introduces strong chemical alteration in the system and induces chemical reactions within the ion track, which enhance ion beam mixing in Ni-PTFE bilayer systems.