纳米晶ZnO:Dy3+粉体的制备和发光性质

通过固相反应法制备了ZnO:Dy3+纳米粉末,样品的X射线衍射、透射电镜和选区电子衍射证实了ZnO:Dy3+纳米粉末属于六方纤锌矿多晶结构.研究了光致发光谱与激发波长和掺杂离子浓度的依赖关系.结果表明,从ZnO:Dy3+纳米粉末的光致发光光谱中首次发现除了Dy3+的4f→4f跃迁外,出现了Dy掺入ZnO后产生的两个缺陷A和B的宽谱带发射峰,峰值分别在600和760nm,半高宽分别约为200和100nm.在ZnO的激子激发下(385nm),峰值760nm的发光强度远远大于峰值在600nm的发光强度.样品的发射光谱中峰值的相对强度变化依赖于激发波长和Dy3+的掺杂浓度.当在Dy3+4f→4f激发下(454nm),光谱中只有Dy3+的4f态间的特征发射,而缺陷A,B不发光.     

单一基质白光荧光粉Ba3Y1－x(PO4)3:xDy3+的合成及其发光特性

采用高温固相法,合成了Ba3Y1-x(PO4)3:xDy3+荧光粉。X射线衍射(XRD)图谱表明,合成物质为纯相Ba3Y(PO4)3晶体。激发谱和发射谱表明,样品的主发射峰位于486nm(4F9/2→6H15/2)和575nm(4F9/2→6H13/2),为典型的Dy3+特征发射,对应于样品的蓝光和黄光发射,其中以348nm激发时得到的峰值最强。样品的主激发峰有8个,均为Dy3+吸收,分别位于292nm(6H15/2→4D7/2),322nm(6H15/2→6P3/2),348nm(6H15/2→6P7/2),362nm(6H15/2→6P5/2),385nm(6H15/2→4M21/2),424nm(6H15/2→4G11/2),452nm(6H15/2→4I15/2)和473nm(6H15/2→4F9/2)处。研究了Dy3+掺杂浓度对发光性能的影响,在掺杂浓度x=0.08时,出现了浓度猝灭,浓度猝灭机理为电偶极-电偶极相互作用;不同Dy3+掺杂浓度荧光粉发射光的色坐标均在白光区域中。同时,研究了敏化剂Ce3+对Ba3Y(PO4)3:Dy3+材料发光强度的影响。     

黄色荧光粉CaBi_2Ta_2O_9:Dy~(3+)的制备及发光性能

采用高温固相反应法制备了Dy3+掺杂铋层结构铁电氧化物CaBi2Ta2O9(CBTO)荧光粉。分别对样品进行了X射线衍射(XRD)分析、扫描电镜(SEM)测试和荧光光谱(PL)的测定。研究表明:荧光粉CBTO:Dy3+的最强激发峰为450 nm,与商用蓝光LED的发射光波长相匹配,发射带峰值位于574 nm,对应于Dy3+的电偶极跃迁4F9/2→6H13/2。分析了Dy3+摩尔分数对样品发光强度的影响,其最佳摩尔分数为7%,根据Dexter理论分析其浓度猝灭机理为电偶极-电偶极相互作用。分别研究了电荷补偿剂Li+、Na+和K+对CBTO:Dy3+发射光谱的影响,结果显示不同的电荷补偿剂均能不同程度地提高样品的发光强度。     

白光LED用Sr3（PO4）2∶Tb3+,Li+荧光粉的制备工艺及发光性能

采用沉淀-燃烧法结合超声波技术合成了小颗粒Sr3(PO4)2∶Tb3+荧光粉,测量了其光谱特性。在Sr3(PO4)2∶Tb3+体系中观察到Tb3+的特征发射,峰值波长分别为489,542,584,620nm,分别对应于Tb3+的5 D4→7F6、5 D4→7F5、5 D4→7F4和5 D4→7F3跃迁,其中542nm处的绿色发射最强。激发光谱由4f75d1宽带吸收(200～280nm)和4f→4f电子跃迁吸收(280～390nm和475～500nm)组成,可被近紫外发光二极管(NUV-LED)有效激发。采用R+(R=Li,Na,K)作为电荷补偿剂,结果表明:Li+作为电荷补偿剂使样品发光强度提高了31%,Na+和K+的掺入则降低了粉体在近紫外区的吸收。     

燃烧法合成BaMgAl_(10)O_(17)∶Eu~(2+)荧光体及发光性能的研究

应用燃烧法在较低温度(600℃)下,于空气中快速合成BaMgAl10O17∶Eu2 (BAM)荧光体。通过XRD和荧光光谱对荧光体进行表征和研究,考察了Eu2 的掺入浓度、尿素用量和Sr2 的掺杂等对荧光体发光性能的影响。结果表明BaMgAl10O17∶Eu2 荧光粉在450nm处的荧光发射源于Eu2 的4f65d1-4f7跃迁。荧光体的发射强度与Eu2 浓度有很大关系,当Eu2 摩尔分数为10%时,发射强度最大。尿素用量对荧光体结晶性能和发光性能有很大影响,当尿素与硝酸盐之比为2.5∶1时,荧光体发光强度最高。Dy3 、Er3 、Nd3 和Pr3 掺杂时,荧光体发光强度增加。Sr2 的掺杂对BAM荧光体的晶体结构和发光性能有很大影响。     

Sr3Ga2O5Cl2:Sm3+荧光粉的制备及发光特性

采用传统的高温固相法成功合成了Sr3-xGa2O5Cl2:Sm3+系列橙红色荧光粉。使用X射线衍射仪（XRD）测试了样品的晶体结构,样品的形貌和颗粒尺寸由扫描电子显微镜（SEM）表征,使用荧光光谱仪测试了样品的光致发光光谱和衰减寿命。Sr3Ga2O5Cl2晶相为单斜结构,掺杂的Sm3+离子取代Sr2+的格位成为荧光粉的发光中心。样品的激发光谱由O2-→Sm3+的电荷迁移带和Sm3+离子4f内层电子的特征激发峰组成,位于230 nm、404 nm的激发峰较强。发射光谱的峰值位于565、601、650 nm处,分别对应于Sm3+的4G5/2→6H5/2、4G5/2→6H7/2、4G5/2→6H9/2特征跃迁。样品的发光强度随着Sm3+浓度的增加先增大后减小,最佳掺杂浓度为3.0% mol。根据实验数据对浓度淬灭的原因进行了探讨,浓度淬灭机理为电偶极-电偶极相互作用。     

Ba_5CaAl_4O__(12):Tb~(3+)荧光粉的制备与发光特性

采用高温固相法合成Ba5CaAl4O12:Tb3+绿色荧光粉,并对其发光性质进行研究。Ba5CaAl4O12:Tb3+在239nm激发下,跃迁发射峰值位于489,543,550,587和623nm,分别对应于Tb3+的5D4→7F6,5D4→7F5,5D4→7F4和5D4→7F3的能级跃迁。样品的紫外激发光谱表明,Ba5CaAl4O12:Tb3+基质吸收是位于240nm附近的宽带吸收。研究Tb3+浓度对样品发光强度的影响,当Tb3+掺杂摩尔分数为4%时,发光强度达到最大。加入H3BO3和NH4Cl两种助熔剂均不同程度地提高了该荧光粉的发光强度,且随着助熔剂浓度的增加发光强度先逐渐增强后下降。相比两种助熔剂发现,NH4Cl比H3BO3的效果更好,更有利于荧光粉的发光。     

新型红色荧光粉NaY（MoO4）2:Sm3+的制备及发光性能的研究

采用高温固相法制备了NaY(MoO4)2:Sm3+新型红色荧光粉,研究了Sm3+在NaY(MoO4)2基质中的发光特性。X射线衍射(XRD)测量结果表明,烧结温度为550℃时,制备的样品为纯相NaY(MoO4)2晶体。样品激发谱由两部分组成:220～340nm为电荷迁移带,峰值位于297nm;350～500nm的一系列线状峰为Sm3+的特征激发峰,最强峰位于403nm(6 H5/2→4 F7/2)。样品可被UV-LED管芯及蓝光激发。发射谱由564nm(4 G5/2→6 H5/2),600nm和607nm(4 G5/2→6 H7/2)、647nm(4 G5/2→6 H9/2)和708nm(4 G5/2→6 H11/2)4个峰组成,最强发射峰位于647nm(4 G5/2→6 H9/2),呈现红光发射。研究了不同Sm3+掺杂浓度对NaY1-X(MoO4)2:xSm3+材料发光强度的影响,X=0.05时出现浓度猝灭,分析表明,其猝灭机理是电偶极-电偶极的相互作用。     

应用于白光显示的碲酸盐玻璃上转换发光特性

用高温熔融法制备了Tm3+/Er3+/Yb3+共掺碲酸盐玻璃(TeO2-ZnO-La2O3)样品,测试了玻璃样品的吸收光谱和上转换发光光谱,分析了上转换发光机理。结果发现:在975 nm,波长激光二极管(LD)激励下,制备的碲酸盐玻璃样品可以观察到强烈的红光(662 nm)、绿光(525、546 nm)和蓝光(475 nm)三基色上转换发光,分别对应于Er3+的4F9/2→4I15/2,2H11/2→4I15/2、4S3/2→4I15/2和Tm3+的1G4→3H6能级跃迁;随着Yb3+掺杂含量和泵浦功率的增加,样品的上转换发光强度都得到了一定程度的提高;通过调整稀土掺杂的浓度,得到了接近于标准白光(EE)发射。     

一种白光LED用绿色荧光粉Ba_3Si_6O_(12)N_2:Eu~(2+)的制备及研究

采用传统高温固相反应法,合成了Ba3-x Si6O12N2:xEu2+系列荧光粉。X射线衍射(XRD)图谱分析表明,所有的样品均生成了Ba3Si6O12N2纯相。激发光谱表明,样品在紫外到蓝光(250~470nm)范围内都可以被有效激发,当激发波长为358nm时,发射光谱是Eu2+典型的宽带发射,发射峰在495nm附近,属于4 f7→4 f65 d1能级之间的跃迁,半峰宽覆盖青绿光范围(480~557nm)。研究了Eu2+掺杂浓度对发光性能的影响。结果表明,随着Eu2+掺杂量的逐渐增加,发光强度逐渐增大,当x=0.15时,发射强度达到最大,所对应的发射光谱波峰的波长最小(492nm);当Eu2+的掺杂量继续增加时,发光强度开始减弱,这是由于Eu2+间距逐渐减小,非辐射跃迁几率增加而发生浓度猝灭现象;不同浓度的样品的发光强度与波长呈相反变化趋势,这与斯托克斯(Stokes)定律是相符合的。研究结果表明,所合成的Ba3Si6O12N2:Eu2+新型绿色荧光粉适合在白光LED中应用。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.