Blue sensitizers for solar cells: Natural dyes from Calafate and Jaboticaba

Blue-violet anthocyanins from Jaboticaba (Myrtus cauliflora Mart) and Calafate (Berberies buxifolia Lam) were employed as TiO₂ dye-sensitizers. Solar cells sensitized by Jaboticaba extracts achieved up to J_sc=9.0 mA cm⁻², V_oc=0.59 V, P_max=1.9 mW cm⁻² and ff=0.54, while for Calafate sensitized cells the values determined were up to J_sc=6.2 mA cm⁻², V_oc=0.47 V, P_max=1.1 mW cm⁻² and ff=0.36. Other natural dyes were evaluated without significant photocurrent, demonstrating that only selected extracts are capable of converting sunlight in electricity. The results obtained with extracts of Jaboticaba and Calafate show a successful conversion of visible light into electricity by using natural dyes as wide band-gap semiconductor sensitizers in dye-sensitized solar cells. It also represents an environmentally friendly alternative for dye-sensitized solar cells with low cost production and an excellent system for educational purposes.     

Characterization of CuInSe2/CdS thin-film solar cells prepared using CBD

CuInSe₂/CdS thin-film heterojunction solar cells were fabricated entirely by chemical bath deposition technique. The illuminated J−V characteristics of the devices prepared with different thicknesses of CdS and CuInSe₂ were studied. The typical solar cell parameters obtained for the best cell are: V_oc = 365 mV, J_sc = 12 mA/cm², FF = 61%, and η = 3.1% under an illumination of 85 mW/cm² on a cell of active area 0.1 cm². The J−V and C−V characteristics under dark condition and the spectral response were also studied for the best cell. The diode quality factor obtained is 1.7.     

Influence of electrolytes on the photovoltaic performance of organic dye-sensitized nanocrystalline TiO2 solar cells

We have studied the influence of electrolytes on the photovoltaic performance of mercurochrome-sensitized nanocrystalline TiO₂ solar cells using LiI, LiBr, and tetraalkylammonium iodides as the electrolyte. Short-circuit photocurrent density (J_sc) and open-circuit photovoltage (V_oc) depended strongly on the electrolyte. J_sc of 3.42 mA cm⁻² and V_oc of 0.52 V were obtained for the LiI electrolyte and J_sc of 2.10 mA cm⁻² and V_oc of 0.86 V were obtained for the Pr₄NI electrolyte. This difference in photovoltaic performance was due to the change in the conduction band level of the TiO₂ electrode. Large V_oc of 0.99 V was obtained for the LiBr electrolyte due to the large energy gap between the conduction band level of TiO₂ and the Br/Br₂ redox potential. Solar cell performance also depended strongly on organic solvent, suggesting that the physical properties of solvents such as Li ion conductivity and donor number affect photovoltaic performance.     

Highly efficient 1 μm thick CdTe solar cells with textured TCOs

Thickness reduction of CdTe absorption layer down to 1 μm has been achieved by controlling the temperature profile used during the close-spaced sublimation (CSS) growth. Transparent conducting oxides, such as indium tin oxide (ITO) and textured fluorine doped tin oxide (SnO₂:F) films have been investigated as transparent electrodes for such 1-μm-thick CdTe absorption layers to increase the incident light confinement and thus to achieve higher conversion efficiency. The contribution in solar cell performance has been found in the case of textured TCOs with optimum haze ratio (roughness). Conversion efficiencies of 10.6% (V_oc: 0.75 V, J_sc: 22.02 mA/cm², FF: 0.64, area: 1 cm²) and 11.2% (V_oc: 0.78 V, J_sc: 22.6 mA/cm², FF: 0.63) have been achieved for only 0.6-μm-thick CdTe absorption layers with SnO₂:F-TCO of 11% and 3% of haze ratios, respectively.     

Effect of a redox electrolyte in mixed solvents on the photovoltaic performance of a dye-sensitized solar cell

The effect of the iodide/triiodide redox electrolyte in various organic solvents on the photoelectrochemical properties of bis(tetrabutylammonium) cis-bis(thiocyanato)bis(4-carboxy-2,2′-bipyridine-4′-carboxylato)ruthenium(II)-sensitized nanocrystalline TiO₂ solar cells was studied. Solvents with large donor numbers dramatically enhanced the open-circuit voltage (V_oc), but usually reduced the short-circuit photocurrent density (J_sc). For a mixed solvent of tetrahydrofuran (THF) and acetonitrile, V_oc increased and the fill factor decreased with increasing THF concentration, but J_sc remained relatively constant. As the partial charge of the N or O atom of the solvent molecule increased, V_oc increased, but J_sc was unchanged up to a certain value of the partial charge (for THF, −0.46). For cells using 0.3 M 4-tert-butylpyridine and 20 vol% THF in the electrolyte, a short-circuit photocurrent density of 18.23 mA cm⁻², an open-circuit voltage of 0.73 V, a fill factor of 0.73, and an overall conversion efficiency of 9.74% were obtained.     

Influence of alkylaminopyridine additives in electrolytes on dye-sensitized solar cell performance

The influence of alkylaminopyridine additives on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′-bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) dye-sensitized TiO₂ solar cell with an I⁻/I₃⁻ redox electrolyte in acetonitrile was studied. The current–voltage characteristics were measured for more than 20 different alkylaminopyridines under AM 1.5 (100 mW/cm²). The alkylaminopyridine additives tested had varying effects on the performance of the cell. All the additives decreased the short circuit photocurrent density (J_sc), but increased the open-circuit photovoltage (V_oc) of the solar cell. Molecular orbital calculations imply that the dipole moment of the alkylaminopyridine molecules influences the J_sc of the cell and that the size, solvent accessible surface area, and ionization energy all affect the V_oc of the cell. The highest V_oc of 0.88 V was observed in an electrolyte containing 4-pyrrolidinopyridine, which is comparable to the maximum V_oc of 0.9 V for a cell consisting of TiO₂ electrode and I⁻/I₃⁻ redox system.     

On the use of triethylamine hydroiodide as a supporting electrolyte in dye-sensitized solar cells

For the first time, the application of a molten salt, triethylamine hydroiodide (THI), as a supporting electrolyte was investigated for the dye-sensitized solar cells (DSSCs). Titanium dioxide (TiO₂) electrode was modified by incorporation of high- and low-molecular weight poly(ethylene glycol) along with TiO₂ nanoparticles of two different sizes (300 nm (30 wt%) and 20 nm (70 wt%)). The highest apparent diffusion coefficient (D) of 8.12×10⁻⁶ cm² s⁻¹ was obtained for I⁻ (0.5 M of THI) from linear sweep voltammetry (LSV). Short-circuit current density (J_sc) increases with the concentration of THI whereas open-circuit potential (V_oc) remains the same. Optimum J_sc (19.28 mA cm⁻²) and V_oc (0.7 V) with a highest conversion efficiency (η) of 8.45% were obtained for the DSSC containing 0.5 M of THI/0.05 M I₂/0.5 M TBP in CH₃CN. It is also observed that the J_sc and η of the DSSC mainly relates with the D values of I⁻ and charge-transfer resistances such as R_ct1 and R_ct2 operating along Pt/TiO₂ electrolyte interface, obtained from LSV and electrochemical impedance spectroscopy (EIS). For comparison, tetraethylammonium iodide (TEAI) and LiI were also selected as supporting electrolytes. Though both the THI and TEAI have similar structures, replacement of one methyl group by hydrogen improves the efficiency of the DSSC containing the former electrolyte. Further, the DSSC containing THI exhibits higher J_sc and η than LiI (7.70%), from which it is concluded that THI may be used as an efficient and alternative candidate to replace LiI in the current research of DSSCs.     

Ribbon Si solar cells with efficiencies over 18% by hydrogenation of defects

We have fabricated 4 cm² solar cells on String Ribbon Si wafers and edge-defined film-fed grown (EFG) Si wafers with using a combination of laboratory and industrial processes. The highest efficiency on String Ribbon Si wafer is 17.8% with an open circuit voltage (V_oc) of 620 mV, a short circuit current density (J_sc) of 36.8 mA/cm² and a fill factor (FF) of 0.78. The maximum efficiency on EFG Si is 18.2% with a V_oc of 620 mV, a J_sc of 37.5 mA/cm² and a FF of 0.78. These are the most efficient ribbon Si devices made to date, demonstrating the high quality of the processed Si ribbon and its potential for industrial cells. Co-firing of SiN_x and Al by rapid thermal processing was used to boost the minority carrier lifetime of bulk Si from 3–5 μs to 70–100 μs. Photolithography-defined front contacts were used to achieve low shading losses and low contact resistance with a good blue response. The effects of firing temperature and time were studied to understand the trade-off between hydrogen retention and Al-doped back surface field (Al-BSF) formation. Excellent bulk defect hydrogenation and high-quality thick Al-BSF formation was achieved in a very short time (1 s) at firing temperatures of 740–750 °C. It was found that the bulk lifetime decreases at annealing temperatures above 750 °C or annealing time above 1 s due to dissociation of hydrogenated defects.     

Dye-sensitized solar cell based on Rose Bengal dye and nanocrystalline TiO2

Dye-sensitized solar cell is fabricated using Rose Bengal dye (RB) for sensitization of nanocrystalline TiO₂ and that imparts extension in spectral response towards visible region by modifying the semiconductor surface. Further, the photoresponse of the cell was evaluated by analyzing its J–V and impedance characteristics under illumination with metal halide light source of 400 W with an incident light of 73 mW/cm². Various photovoltaic parameters like J_sc, V_oc, FF were evaluated and found to be 3.22 mA, 890 mV, 0.53, respectively, resulting conversion efficiency (η) of 2.09%. Impedance analysis of the cell was carried out to investigate the internal resistance of the cell by recording Cole–Cole plots in between real and imaginary impedance in dark and with illumination under variable biasing, i.e. from 0 to 3 V.     

Highly efficient photon-to-electron conversion with mercurochrome-sensitized nanoporous oxide semiconductor solar cells

Dye-sensitized solar cells based on nanoporous oxide semiconductor thin films such as TiO₂, Nb₂O₅, ZnO, SnO₂, and In₂O₃ with mercurochrome as the sensitizer were investigated. Photovoltaic performance of the solar cell depended remarkably on the semiconductor materials. Mercurochrome can convert visible light in the range of 400–600 nm to electrons. A high incident photon-to-current efficiency (IPCE), 69%, was obtained at 510 nm for a mercurochrome-sensitized ZnO solar cell with an I⁻/I₃⁻ redox electrolyte. The solar energy conversion efficiency under AM1.5 (99 mW cm⁻²) reached 2.5% with a short-circuit photocurrent density (J_sc) of 7.44 mA cm⁻², a open-circuit photovoltage (V_oc) of 0.52 V, and a fill factor (ff) of 0.64. The J_sc for the cell increased with increasing thickness of semiconductor thin films due to increasing amount of dye, while the V_oc decreased due to increasing of loss of injected electrons due to recombination and the rate constant for reverse reaction. Dependence of photovoltaic performance of mercurochrome-sensitized solar cells on semiconductor particles, light intensity, and irradiation time were also investigated. High performance of mercurochrome-sensitized ZnO solar cells indicate that the combination of dye and semiconductor is very important for highly efficient dye-sensitized solar cells and mercurochrome is one of the best sensitizers for nanoporous ZnO photoelectrode. In addition, a possibility of organic dye-sensitized oxide semiconductor solar cells has been proposed as well as one using metal complexes.     

Poly-Si thin films by metal-induced growth for photovoltaic applications

Poly-Si films were produced using a metal-induced growth technique by sputtering from an n-type Si target onto a 50 nm thick Co seed-layer at 625°C. Silicon grew heteroepitaxially on the CoSi₂ layer formed due to the reaction between the sputtered Si atoms and Co at the beginning stage of deposition. A 5 μm thick Si film with grain features up to 1 μm was produced on the thin and flexible tungsten substrate by using a two-step sputtering method. The films also have a natural texture structure on the surface that is strongly recommended in thin-film solar cells in order to obtain high current density by increasing incident light trapping. After post-sputtering annealing at 700°C, the measured minority carrier lifetime for poly-Si film was 1.33 μs which shows the film to be suitable for photovoltaic applications. To explore the photovoltaic applications by using MIG poly-Si films, Au/n-Si Schottky photodiodes were fabricated due to the process simplicity. The effects of different parameters, which include film doping density, active-layer thickness, Si film surface conditions and hydrogenation, were studied. It was found that with the increasing of doping density, the open-circuit voltage (V_oc) increased while short-circuit current density (J_sc) decreased. Increasing the poly-Si active-layer thickness tended to improve the light absorption with an increased J_sc, but the V_oc was decreased due to a higher value of reverse saturation current. Because the metal/semiconductor interface condition facilitates the carrier transport in Schottky devices, the earlier study of modifying the Si surface by polishing showed an improved V_oc. The overall photo response was further improved by plasma hydrogenation.     

Effects of pH of a hybrid gel incorporated with 3-aminopropyltrimethoxysilane on the performance of a quasi-solid state dye-sensitized solar cell

Network hybrid gel prepared with tetraethyl orthosilicate, 3-aminopropyltrimethoxysilane (APS) and poly(ethylene glycol) was used as an electrolyte matrix in a quasi-solid state dye-sensitized solar cell (DSSC). Change in pH of this hybrid gel by varying the composition of APS was found to have remarkable effects on the photoelectrochemical performance of the cell. The hybrid gel matrix, having silane polymer backbones with free amine functionality, was characterized by FT-IR spectra and FE-SEM images, and the assembled DSSC by photocurrent-voltage and incident photon to current conversion efficiency curves. The unsealed, quasi-solid state DSSC with the hybrid gel has shown an increase in the open-circuit voltage (V_oc) and a steady decrease in the short-circuit photocurrent (J_sc), with increase in the content of APS. A maximum conversion efficiency of 4.5% was obtained for a DSSC by using 20% of APS in its hybrid gel at a light intensity of 100 mW cm⁻². Upon replacing the amino group of APS by bulkier aniline and benzophenoaniline groups, conversion efficiencies of the corresponding DSSCs were reduced. Variations in the V_oc and J_sc are explained in terms of shift of the flat band potential of TiO₂ and a complex formation between I₃⁻ and −NH₂ of APS of the electrolyte.     

CIS thin film solar cells with evaporated InSe buffer layers

This paper describes the investigations of CIS-based solar cells with a new In_xSe_y (IS) buffer layer. Studies were concentrated on determining the deposition conditions to get In_xSe_y thin films with adequate properties to be used in substitution of the CdS buffer layer, usually employed in the fabrication of this type of devices. Before the solar cell fabrication, the buffer layers grown by evaporation of the In₂Se₃ compound were characterized through transmittance and X-ray diffraction measurements. It was found that good results can be obtained using indium selenide film as the buffer layer, grown in the In₂Se₃ phase.Solar cells with structure Mo/CIS/In₂Se₃/ZnO were fabricated. The ZnO layer was deposited by reactive evaporation and the absorber CIS layer was grown on Mo by a two-stage process. The preliminary results obtained with this type of solar cells are J_sc=30.8 mA/cm², V_oc=0.445 V, FF≈0.6 and η=8.3% with an irradiance of 100 mW/cm². Solar cells fabricated using a CdS buffer layer deposited by CBD on CIS substrate, prepared under the same conditions used in the fabrication of Mo/CIS/In₂Se₃/ZnO cells, gave the following results: V_oc=0.43 V, J_sc=34 mA/cm², FF≈0.63 and η=9.2%.     

p-doped μc-Si:H window layers prepared by hot-wire CVD for amorphous solar cell application

We report on boron-doped μc-Si:H films prepared by hot-wire chemical vapor deposition (HWCVD) using silane as a source gas and trimethylboron (TMB) as a dopant gas and their incorporation into all-HW amorphous silicon solar cells. The dark conductivity of these films was in the range of 1–10 (Ω cm)⁻¹. The open circuit voltage V_oc of the solar cells was found to decrease from 840 mV at low hydrogen dilution H-dil=91% to 770 mV at high H-dil =97% during p-layer deposition which can be attributed to the increased crystallinity at higher H-dil and to subsequent band edge discontinuity between μc-Si:H p- and amorphous i-layer. The short circuit current density J_sc and the fill factor FF show an optimum at an intermediate H-dil and decrease for the highest H-dil. To improve the conversion efficiency and the reproducibility of the solar cells, an amorphous-like seed layer was incorporated between TCO and the bulk p-layer. The results obtained until now for amorphous solar cells with and without the seed layer are presented. The I–V parameters for the best p–i–n solar cell obtained so far are J_sc=13.95 mA/cm², V_oc=834 mV, FF=65% and η=7.6%, where the p-layers were prepared with 2% TMB. High open circuit voltages up to 847 mV could be achieved at higher TMB concentrations.     

Performance of p-type silicon-oxide windows in amorphous silicon solar cell

a-SiO_x films have been prepared using silane and pure oxygen as reactive gases in plasma CVD system. Diborane was introduced as a doping gas to obtain p-type conduction silicon oxide. Infrared absorption spectra show the incorporation of Si–O stretch mode around 1000 cm⁻¹. The optical bandgap increases with the oxygen to silane gas ratio, while the electrical conductivity decreases. Hydrogenated amorphous silicon solar cells have been fabricated using p-type a-SiO_x with around 1.85 eV optical bandgap and conductivity greater than 10⁻⁷ S/cm. The measured current–voltage characteristics of the solar cells under 100 mW/cm² artificial light are V_oc=0.84 V, J_sc=14.7 mA/cm², FF=0.635 with a conversion efficiency of 7.84%.     

Photosensitization of nanocrystalline TiO2 films by a polymer with two carboxylic groups, poly (3-thiophenemalonic acid)

Photovoltaic devices were assembled using a conducting polymer; poly (3-thiophenemalonic acid) sensitized TiO₂ electrodes and an electrolyte containing I₃⁻/I⁻ redox couple. This cell exhibited a short-circuit photocurrent (J_sc) of 6.65 mA cm⁻², an open circuit voltage (V_oc) of 355 mV and an efficiency of 1.5% under the illumination of 100 mW cm⁻² (AM 1.5). Addition of an ionic liquid, 1-methyl 3-n-hexylimidazolium iodide, into the electrolyte led to an improvement in the cell performances, achieving an overall efficiency of 1.8% under the same illumination. The average cell characteristics of the later devices are , with a fill factor of 0.65.     

Photovoltaic characteristics of phosphorus-doped amorphous carbon films grown by r.f. plasma-enhanced CVD

The phosphorus-doped amorphous carbon (n-C:P) films were grown by r.f. power-assisted plasma-enhanced chemical vapor deposition at room temperature using solid phosphorus target. The influence of phosphorus doping on material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, the solar cell properties such as series resistance, short circuit current density (J_sc), open circuit current voltage (V_oc), fill factor (FF) and conversion efficiency (η) along with the spectral response are reported for the fabricated carbon based n-C:P/p-Si heterojunction solar cell were measured by standard measurement technique. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm², 25 °C). The maximum of V_oc and J_sc for the cells are observed to be approximately 236 V and 7.34 mA/cm², respectively for the n-C:P/p-Si cell grown at lower r.f. power of 100 W. The highest η and FF were found to be approximately 0.84% and 49%, respectively. We have observed the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.     

Enhanced quantum yield in porphyrin/electron-donor double-layer solar cells

When the layer of 3-carboxymethyl-5-[(3-ethyl-2(3H)-benzothiazolylidine)ethylidene (MC(COOH)) is inserted into the Au/Zntpyp interface in Al/Zntpyp/Au sandwich-type solar cell (Zntpyp: 5,10,15,20-tetra(3-pyridyl)porphyrinatozinc), the photovoltaic properties are remarkably improved. For the Al/Zntpyp(thickness 10 nm)/MC(COOH)(20 nm)/Au cell, a short-circuit photocurrent (J_sc) of 0.93 μ Acm⁻², open-circuit photovoltage (V_oc) of 0.71 V, fill factor (ff) of 0.41, and energy conversion yield (η) of 3.6% are obtained when illuminated at the Al/Zntpyp interface with 455 nm monochromatic light of 7.5 μ Wcm⁻² intensity. A rapid electron-transfer from the donor MC(COOH) to photogenerated holes in Zntpyp suppresses the charge recombination of the photogenerated carriers. The energetically well-arranged valence band levels eventually enhance the η value about 9 times compared with the Al/Zntpyp/Au cell. Further the Al/HD(9 nm)/MC(COOH)(20 nm)/Au cell using a longer-lived sensitizer (HD) instead of Zntpyp gives a J_sc value of 2.36 μ Acm⁻², V_oc value of 0.69 V, ff value of 0.34, and η value of 4.8% when illuminated with 445 nm monochromatic light of 11.7 μ Wcm⁻² intensity at the Al/HD interface, where HD represents a heterodimer consisting of 5,10,15-tri(4-chlorophenyl)-20-(3-pyridyl)porphyrin(H₂pyp₃p(Cl)) and 5,10,15,20-tetra(2,5-dimethoxyphenyl)porphyrinatozinc(Zntpp(OMe)₂).     

InA1As/InGaAs low-band-gap cell on InP for high efficiency multi-structure solar cell system

InA1As/InGaAs solar cells on InP for a low-band-gap cell have been fabricated. From theoretical simulation it is expected that the optimized InA1As/InGaAs cell should have photovoltaic characteristics values of J_sc = 21.2 mA cm⁻², V_oc = 0.345 V, FF = 0.745 and ν = 4.02% at one sun AM0 without an AR-coating. The best performance achieved by experiment was J_sc = 22.0 mA cm⁻², V_oc = 0.320 V, FF = 0.695, ν = 3.61% without an AR-coating. The uniformity of the characteristics was much improved utilizing the InGaAs cap layer for a low contact resistivity.     

Influence of alkyl dihalide gelators on solidification of dye-sensitized solar cells

Quasi-dye-sensitized solar cells were prepared by using ionic liquid-type electrolytes and gelators consisting of polyvinylpyridine and alkyl dihalides. Gelation occurred by the reaction of polyvinylpyridine and alkyl dihalides. When the chain length of the dihalides was varied, the short-circuit current (J_sc) increased with an increase in the chain length. However, the open-circuit voltage (V_oc) and fill factor (ff) slightly decreased. The increase in J_sc was brought about by the decrease in the interfacial resistances between the gel electrolyte and the counter electrode. In addition, the increase in the J_sc was explained by increases in the apparent diffusion coefficient of I⁻/I₃⁻ when the chain length increased. Decreases in V_oc and ff were explained by back-electron transfers from TiO₂ to iodine in the electrolytes. V_oc of the cells solidified by alkyldiiodide was lower than that solidified by alkyldichloride or alkyldibromide. It was explained by negatively shifted redox potential of I⁻/I₃⁻, compared with those for Cl⁻/Cl₂ or Br⁻/Br₂.