基于环偶极子共振的高Q值超材料传感器

提出了一种结构简单且可激发环偶极子共振的全介质超材料，该超材料具有高品质因子（Q）和高灵敏（FOM）值。基于环偶极子共振电流密度和电场分布，分析了超材料能够激发环偶极子的内在物理机制。经模拟计算发现，全介质超材料的Q值和FOM值可分别达到14000以上和672.7/RIU左右。基于谐振子耦合模型和共振波长处的电场分布，分析了超材料全介质开口环间距和探测物厚度对其Q值和环偶极子共振波长的影响机理。该研究可以为设计制备应用于生物、化学探测的高质量环偶极子共振超材料传感器提供理论基础。     

太赫兹多谐振环偶极子超表面中的类EIT效应

设计了一种在太赫兹波段下的四谐振环偶极子超表面结构,超表面的单元结构由一对反向的非对称开口谐振环(ASRR)及基底介质组成。在其谐振谱中观察到1个典型的类电磁诱导透明(EIT)现象。利用法诺(Fano)谐振模型对这种电磁诱导透明谐振谱进行拟合,良好的拟合结果揭示了不同谐振模式之间的耦合作用。此外,研究发现谐振的电磁特性对金属谐振环的开口间距非常敏感,开口间距的改变带来了谐振的频移和Q值的变化。该多谐振环偶极子超表面不仅为实现EIT效应提供了有效途径,而且有利于开发更多的太赫兹功能器件。     

基于超材料结构的高Q太赫兹滤波器

在半导体微纳工艺基础上研究了基于镜像非对称结构超材料太赫兹(THz)滤波器的性能。通过时域有限差分理论,模拟分析了滤波器工作频率下太赫兹电场强度和电流密度在微结构的分布,并阐述了微结构太赫兹波电磁共振的机理。基于太赫兹滤波器电磁损耗机制和微纳加工工艺条件,设计并优化器件开口环结构,使相邻开口环中产生电磁场的干涉相消,减少太赫兹辐射损耗,提高品质因子Q值。采用太赫兹时域光谱(THz-TDS)系统测试了滤波器的太赫兹透射特性,实验结果表明,在工作频率0.923 THz下,镜像非对称结构的平面太赫兹滤波器品质因子达到12.5。同时,研究了太赫兹电场方向对滤波器性能的影响。高Q太赫兹滤波器的研制为制备高速太赫兹电调制器等太赫兹器件提供了重要的实验依据。     

高品质因数太赫兹超材料设计的仿真分析

提出了一种以非对称双开口环谐振器为基本单元的新型高品质因数Q太赫兹超材料结构。当入射电场为垂直极化时,所提出的结构在不同的太赫兹频段分别表现出束缚模谐振、混合模式谐振和偶极子谐振3种谐振响应,通过改变其单元结构的开口位置和水平金属微带线间的垂直距离可以调节3个谐振响应的品质因数和中心谐振频率。其中,束缚模谐振的品质因数最高可达40,相应的3 d B带宽约为11.1 GHz;混合模式谐振的品质因数可达16,相应的3 d B带宽约为62.4 GHz。这种具有高Q值的太赫兹超材料在高分辨率薄膜传感器、高性能窄带滤波器以及高频调制器中具有广泛的应用前景。     

应用于THz波的非对称双开口环传输特性研究

设计并制备了一种适用于太赫兹波段的非对称双开口环结构,数值仿真和实验测量了其传输性质.结果表明,垂直极化时样品在低频的0.540 THz和0.925 THz处存在谐振点,来源于左右两开口环的LC谐振,电流和电场分布主要集中在两开口环的开口处;而在高频处(1.885THz)谐振点的表面电流具有相反的两个环流方向,电流和电场分布于整个样品表面,此处的谐振来源于两开口环耦合后的偶极子谐振.当太赫兹波平行极化该样品时,原来两个低频的LC谐振消失.实验测量结果与数值仿真具有很好的一致性.此结构超材料的传输特性研究对太赫兹波调制器、滤波器、吸收器及偏振器等器件设计和制备具有一定的指导意义.     

偏振不敏感的九聚物太赫兹超材料

在实验上提出将九个开口谐振环以第一个谐振环的开口方向为基准按照涡旋状的轨迹排布,且依次将开口环逆时针扭转40,构成九聚物太赫兹超材料,并在理论上系统研究了该超材料的传输特性。将原本只具有单一谐振模式的开口谐振环按照类似于低聚物的结构排布方式构成周期单元结构时,利用结构末端引起的能量耦合来增强相邻谐振器间的能量耦合,便会有更多的谐振模式产生,最终实现偏振不敏感的效果。这种思路丰富了传统超材料离散结构的设计理念,为太赫兹超材料功能器件,如开关,调制器和滤波器等的设计提供了一种新的参考方案。     

基于磁束缚模式相消干涉的类EIT超材料

提出一种具有电磁诱导透明(EIT)效应的太赫兹超材料。该结构单元由非对称排布的2对双金属线(aCWs)组成。当入射电场为垂直极化时,所提结构在0.580 8 THz附近产生磁束缚模式的相消干涉,形成一个Q值较高的异常透明峰。在单元中加入开口谐振环(SRR),SRRs与非对称双金属线对之间产生干涉,形成新的透明峰。加入SRRs后,2对双金属线干涉产生的透明峰的传感特性得到改善。仿真表明,aCWs以及其与SRRs组合而成的结构(aCWs/SRRs)可用于太赫兹的单频带通滤波、双频滤波以及传感。     

光调制超材料及其传感应用

研究了一种太赫兹光调制超材料传感器。该器件由金属-半导体复合结构（开口谐振环（SRR））和柔性聚酰亚胺衬底组成。光敏硅材料填充在器件上方的两个开口处。模拟结果表明,通过改变外激励泵浦光的功率,光敏硅的电导率发生改变,从而实现对复合超材料结构谐振峰的调制。进一步分析该结构在谐振频率下的电场和表面电流密度分布情况,讨论了其物理机制。此外,随着待测溶液（氯化钙）浓度变化,传感器谐振峰发生红移,其灵敏度为11.4 GHz/M。该器件可作为太赫兹波段液体传感器使用。     

光调制超材料及其传感应用（英文）

研究了一种太赫兹光调制超材料传感器。该器件由金属-半导体复合结构(开口谐振环(SRR))和柔性聚酰亚胺衬底组成。光敏硅材料填充在器件上方的两个开口处。模拟结果表明,通过改变外激励泵浦光的功率,光敏硅的电导率发生改变,从而实现对复合超材料结构谐振峰的调制。进一步分析该结构在谐振频率下的电场和表面电流密度分布情况,讨论了其物理机制。此外,随着待测溶液(氯化钙)浓度变化,传感器谐振峰发生红移,其灵敏度为11.4 GHz/M。该器件可作为太赫兹波段液体传感器使用。     

一种具有多种谐振模式的太赫兹超表面器件

设计了一种中心对称的分裂环形状超表面结构,该结构具有偏振不敏感和高品质因子的特性。通过理论和实验研究,深入分析了其谐振点的频谱特性,并确定了谐振峰的模式,包括LC、偶极和高阶谐振等。其中,几种高阶谐振模式表现出较高的高品质因数Q(约230),并且对超表面衬底材料的介电常数变化高度敏感。此外,还研究了具有不对称超表面结构的电磁性质,发现通过分别增加超表面结构沿水平轴(x轴)和垂直轴(y轴)的不对称性,可以产生和增强0.332 THz和0.210 THz的谐振。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks