扫描隧道显微镜与隧道谱测量

本文以低维化合物系统为主研究对象，介绍利用扫描探针显微镜进行隧道谱测量的基本原理及一些实验成果。     

高重频CO2激光对Hg0.826Cd0.174Te晶体的损伤

开展了HgCdTe 晶体的多脉冲热损伤问题的实验研究。采用形貌学方法对脉宽为300 ns 重复频率可调的CO2 激光器对Hg0.826Cd0.174Te 晶体的损伤阈值进行了实验测量,并建立了高重频脉冲CO2 激光辐照Hg0.826Cd0.174Te 晶体的三维热传导理论模型,分析了激光重复频率和辐照时间对晶体损伤特性的影响。研究表明:300 ns 的CO2 激光辐照时间大于10 s时,Hg0.826Cd0.174Te 晶体的损伤阈值不随辐照时间的增加而改变,其损伤阈值为1.421 4103W/cm2;激光重频对晶体的损伤阈值的影响较小,损伤阈值主要取决于辐照激光的平均功率密度。SEM 损伤结果显示:晶体损伤为热熔损伤,表面未发现由热应力造成的裂缝。理论模型获得的损伤数据和温升规律支持实验结果。该研究可为高重频CO2 激光应用、激光防护等提供参考。     

二氧化硅超薄膜的扫描隧道显微镜和扫描隧道谱研究

用超高真空热氧化方法在Si(111)清洁衬底上生长了二氧化硅超薄膜，并利用超高真空扫描隧道显微镜和扫描隧道谱技术对超薄膜的表面形貌和局域电学特性进行了研究。结果显示，在超薄范围二氧化硅呈层状生长，不同层的微分电导谱所测禁带宽度差别可以达到约3eV，形貌对二氧化硅带宽的影响小于膜厚的影响。     

超高真空扫描隧道谱实验对碲镉汞室温带隙的直接测定

利用超高真空扫描隧道显微镜的隧道谱实验对汞空位掺杂的液相外延P型碲镉汞材料在室温条件下进行测量,发现直接的电流-电压隧道谱对带隙预言一定程度上要受到成像偏置电压的影响.但当采用了锁相放大测量技术,通过实验直接获取微分隧道谱(dI/dV)信号,并利用电流-电压谱对dI/dV作归一化处理时,最终结果则能较准确、可靠地预言材料的带隙,表明扫描隧道谱方法作为独立于光学方法之外的另一种实验表征手段对碲镉汞能带电子结构研究的适用性.     

一种新型扫描隧道显微镜针尖腐蚀仪的设计

针对扫描隧道显微镜的针尖腐蚀系统,提出了一种新的电路,改变了反应电流的测量机制,克服了以往腐蚀过程中电压变化的缺点,提高了针尖制作的成功率。在此基础上对比了新旧两种电路的效果,并测量了腐蚀电压,截止电流以及钨丝浸入长度对针尖质量的影响,发现反应参数的改变对针尖特征的影响是多方面的,必须均衡考虑才能提高成功率,最后,作者在合适的参数条件下观察了整个腐蚀过程,并检测了针尖的使用效果。     

利用优化差分电路制作扫描隧道显微镜针尖

扫描隧道显微镜是一种分辨率极高的表面研究仪器,针尖对其工作过程及图像质量有决定性的影响。本文针对目前针尖腐蚀成功率较低和不稳定的缺点,提出了一种新的电路。该设计改变了反应电流的测量机制,使实际反应电压在实验过程中保持稳定,同时为了得到更加尖锐的针尖,利用差分电路监控反应过程的电流变化,能够在反应结束的瞬间立刻切断电路,避免了过度反应使针尖变钝。最后,通过观察反应电压,阴极圆环位置,差分电路灵敏度以及电解液浓度对针尖质量的影响,给出了合适的反应参数,并且比较了差分电路和传统电流阈值监控法的优缺点。结果表明新电路在稳定性上有所提高,与电流阈值监控法相比,针尖质量更好,另外扫描隧道显微镜测试结果也表明针尖质量完全符合要求。     

液相外延p型碲镉汞表面区与腐蚀凹坑的不同扫描隧道谱特征

利用超高真空扫描隧道显微镜对经过溴甲醇溶液腐蚀处理的液相外延碲镉汞材料进行了表征.发现经过腐蚀处理(3%浓度,2.5 min)的样品表面出现高密度的凹坑结构,凹坑深度约几十纳米,横向尺度在几十到几百纳米之间.扫描隧道谱测量表明,腐蚀样品表面平坦区呈现较大表观带隙,需考虑针尖诱导的能带弯曲效应,而凹坑区在零偏压区的扫描隧道谱线则近似为线性变化,说明该区域包含较高的带隙态并直接参与隧穿,从而掩盖了带隙信息.     

扫描隧道显微镜钨针尖氧化层去除的化学方法

电化学腐蚀得到的扫描隧道显微镜(STM)钨针尖表面通常覆盖了一层钨的氧化膜,这层氧化膜的存在很大程度上影响了STM扫描图像质量.本实验采用氢氟酸对新制备出的钨针尖进行去氧化层处理,并通过对比两组高序热解石墨(HOPG)STM图像和金样品的扫描隧道谱来论证这种去氧化层手段的有效性.     

扫描隧道显微镜中的能谱分析

本文探讨了扫描隧道显微镜中的样品成分分析问题，提出了分析元素的方案，认为二极式结构的俄歇电子出现势谱具有很好的前景，本文对二极式结构的俄歇电子出现势谱的实验作了介绍，并提出了提高其性能的一些方法使它具有应用的可能。     

Persistent photoconductivity of amorphous Hg0.78Cd0.22Te: In films

The persistent photoconductivity (PPC) of amorphous Hg_0.78Cd_0.22Te: In films has been studied under illumination by super-bandgap light (a He-Ne laser, hν=1.96 eV, 30 mW/cm²) and sub-bandgap light (1000 K Blackbody source, the largest photon energies hν_p=0.42 eV, 8.9 mW/cm²) in the range of 80-300 K. The persistent photoconductivity effect increases with increase in illumination intensity and illumination time. However, it decreases with increase in working temperature. The non-exponential decay of photoconductivity implies the presence of continuous distribution of defect states in amorphous Hg_0.78Cd_0.22Te: In films. These results indicate that the decay of photoconductivity is not governed by the carrier trapped in the intrinsic defects, but it may be due to light-induced defects under light illumination.     

非晶碲镉汞薄膜的暗电导与光电导

This paper reports the dark conductivity and photoconductivity of amorphous Hg_(0.78)Cd_(0.22)Te thin films deposited on an Al_2O_3 substrate by RF magnetron sputtering.It is determined that dark conduction activation energy is 0.417 eV for the as-grown sample.Thermal quenching is absent for the as-grown sample during the testing temperature zone,but the reverse is true for the polycrystalline sample.Photosensitivity shows the maximum at 240 K for amorphous thin films,while it is higher for the as-grown ...     

A scanning tunneling microscopy study of low-temperature grown GaAs

Scanning tunneling microscopy (STM) has been used to investigate the effect of low-temperature (LT) growth of GaAs by molecular beam epitaxy on the morphology of the resulting surface. We present STM images of a GaAs(001) surface that was grown at ∼300°C and subsequently annealed at 600°C and show that there is a recovery of the (2×4) reconstruction. We also report images of a surface grown on top of a buried LT GaAs layer and show that the LT layer has little effect on the resulting surface morphology. In addition, scanning tunneling spectroscopy spectra are presented which demonstrate that the current-voltage characteristics of annealed and unannealed LT grown GaAs are significantly different.     

Assessment of Tight Pixel Geometry Influence on Surface Chemistry of Hg1? X Cd X Te Focal Plane Array by Time of Flight–Secondary Ion Mass Spectroscopy: Novel Analytical Methods

Factors such as lateral control of surface chemistry, reproducible etch depths and widths, and elimination of cross-contamination are vital to achieving world-class Hg_1-X Cd _X Te focal plane infrared detector arrays. Raytheon Vision Systems (RVS) has made significant progress toward a greater understanding of these factors. The current investigation applies time of flight–secondary ion mass spectroscopy (TOF-SIMS) to assess the manner in which Hg_1-X Cd _X Te surface chemistry is influenced by three different critical physical-chemical factors: (1) process chemistry, including baseline and four alternatives; (2) patterned photoresist format; and (3) etch geometry, including aspect ratio, trench depth, trench width, and unit cell spacing. The first of two patterned photoresist formats consisted of an array having 15-μm unit cells with 5-μm-wide and either 3.5-μm- or 6-μm-deep trenches. The second format consisted of a special diagnostic array of parallel dry-etched stripes having various permutations of trench depths (6 μm and 10 μm), trench widths (3 μm and 5 μm), and trench-to-trench separations (3 μm, 5 μm, and 20 μm). The surface chemistry results relative to etch-depth/width ratios, exposed Hg_1−X Cd _X Te area (etch widths), and trench separation distances show that these parameters have a measurable influence on cross-contaminant abundance and type and on the relative ranking of the process cleaning efficacies. Novel analytical methods for using TOF-SIMS data to qualitatively assess cleaning efficacy, geometry-dependent surface species distributions, the polar/hydrophilic and nonpolar/hydrophobic nature of the processed surface, and the dependence of cleaning efficacy on surface chemistry are also discussed. These methods are intended for use in a variety of studies.     

高分子保护纳米粒子结构的扫描探针显微研究

高分子保护的纳米粒子的细致结构可以从扫描隧道显微镜（ＳＴＭ）图像中得到,单个粒子的发图像分析中显示存在着一个中央峡和两个肩峰。通过与透镜镜结果的对比,证实两个肩峰是由于内部金属核心与外部高了壳层间界面电阻的不连续变化所引起,在此基础上建立了一个简单的几何模型。     

The scanning tunneling microscopy and spectroscopy of GaSb1-xBix films of a few-nanometer thickness grown by molecular beam epitaxy

The ultrahigh vacuum scanning tunneling microscope (STM) was used to characterize the GaSb1-xBix films of a few nanometers thickness grown by the molecular beam epitaxy (MBE) on the GaSb buffer layer of 100 nm with the GaSb (100) sub-strates.The thickness of the GaSb1-xBix layers of the samples are 5 and 10 nm,respectively.For comparison,the GaSb buffer was also characterized and its STM image displays terraces whose surfaces are basically atomically flat and their roughness is generally less than 1 monolayer (ML).The surface of 5 nm GaSb1-xBix film reserves the same terraced morphology as the buffer layer.In contrast,the morphology of the 10 nm GaSb1-xBix film changes to the mound-like island structures with a height of a few MLs.The result implies the growth mode transition from the two-dimensional mode as displayed by the 5 nm film to the Stranski-Krastinov mode as displayed by the 10 nm film.The statistical analysis with the scanning tunneling spectroscopy (STS)measurements indicates that both the incorporation and the inhomogeneity of Bi atoms increase with the thickness of the GaSb1-xBix layer.     

Hg0.4Cd0.6Te 1.55-μm avalanche photodiodenoise analysis in the vicinity of resonant impact ionization connectedwith the spin-orbit split-off band

The authors describe the electrical and optical characterization of three Hg_1-xCd_xTe avalanche photodiodes manufactured using planar technology with composition parameter x near 0.6. This alloy composition leads to devices that are well suited for 1.55-μm detection. From the noise analysis under multiplication, the authors show the tight dependence of the ratio β/α (of the hole; and electron ionization coefficient, respectively) upon x and the ratio Δ/E_g where Δ is the spin-orbit splitting energy and E _g is the bandgap energy. It turns out that in these alloys around x=0.6, Δ is very close to the bandgap energy so β/α reaches its maximum value. Owing to this property, which is characteristic of II-VI compounds, Hg_1-xCd_xTe is a good candidate for 1.3-μm to 1.6-μm avalanche photodiodes     

Controllable nanostructures on La0.7Sr0.3MnO3 thin film surfaces formed by scanning tunneling microscopy

Nanoscale structuring on La_0.7Sr_0.3MnO₃ (LSMO) thin film surfaces has been performed by scanning tunneling microscopy (STM) under ambient conditions. From line etching experiments we found that the line-depth increases in a stepwise fashion with increasing bias voltage. It also increases with decreasing scan speed and increasing scan repetition. We observed that the line-depth is an integral multiple of the LSMO out-of-plane lattice constant about 0.4 nm. Lateral structure with minimum feature size of 1 nm is possible to obtain. In addition, a four-level inverse-pyramid structure has been created on LSMO thin film surfaces. Our work shows the feasibility of using STM to fabricate controllable and complex nanostructures in LSMO thin film.