Up-converted 1/f PM and AM noise in linear HBT amplifiers

In this paper we describe a technique to predict the 1/f phase modulation (PM) and 1/f amplitude modulation (AM) noise due to up-conversion of 1/f baseband current noise in microwave heterojunction bipolar transistor (HBT) amplifiers. We obtain an accurate model for the amplifier and find the expression for voltage gain in terms of DC bias, transistor parameters, and circuit components. Theoretical 1/f PM and AM noise sensitivities to 1/f baseband current noise are then found by applying the definitions of PM and AM noise to the gain expression of the amplifier. Measurements of PM and AM sensitivities at 500 MHz and 1 GHz were in good agreement with the values predicted by theory, verifying the validity of this technique. This method can be used to optimize amplifier design for low PM and AM noise. We show that the amplifier PM noise can be reduced by 9 dB by adjusting the value of the input coupling capacitor.     

The effect of AM noise on correlation phase-noise measurements

We analyze the phase-noise measurement methods in which correlation and averaging is used to reject the background noise of the instrument. All the known methods make use of a mixer, used either as a saturated-phase detector or as a linear-synchronous detector. Unifortunately, AM noise is taken in through the power-to-dc-offset conversion mechanism that results from the mixer asymmetry. The measurement of some mixers indicates that the unwanted amplitude-to-voltage gain is of the order of 5-50 mV, which is 12-35 dB lower than the phase-to-voltage gain of the mixer. In addition, the trick of setting the mixer at a sweet point--off the quadrature condition--where the sensitivity to AM nulls, works only with microwave mixers. The HF-VHF mixers do not have this sweet point. Moreover, we prove that if the AM noise comes from the oscillator under test, it cannot be rejected by correlation. At least not with the schemes currently used. An example shows that at some critical frequencies the unwanted effect of AM noise is of the same order-if not greater--than the phase noise. Thus, experimental mistakes are around the corner.     

Vibration-induced PM and AM noise in microwave components

The performance of microwave components is sensitive to vibrations to some extent. Aside from the resonator, microwave cables, and connectors, bandpass filters, mechanical phase shifters, and some nonlinear components are the most sensitive. The local oscillator is one of the prime performance-limiting components in microwave systems ranging from simple RF receivers to advanced radars. The increasing present and future demand for low acceleration sensitive oscillators, approaching 10?13/g, requires a reexamination of sensitivities of basic nonoscillatory building-block components under vibration. The purpose of this paper is to study the phase-modulation (PM) noise performance of an assortment of oscillatory and nonoscillatory microwave components under vibration at 10 GHz. We point out some challenges and provide suggestions for the accurate measurement of vibration sensitivity of these components. We also study the effect of vibration on the amplitude-modulation (AM) noise.     

A study of noise phenomena in microwave components using an advanced noise measurement system

A novel 9 GHz measurement system with thermal noise limited sensitivity has been developed for studying the fluctuations in passive microwave components. The noise floor of the measurement system is flat at offset frequencies above 1 kHz and equal to -193 dBc/Hz. The developed system is capable of measuring the noise in the quietest microwave components in real time. We discuss the results of phase and amplitude noise measurements in precision voltage controlled phase shifters and attenuators. The first reliable experimental evidences regarding the intrinsic flicker phase noise in microwave isolators are also presented.     

Residual phase noise measurements of VHF, UHF, and microwavecomponents

The results of residual phase noise measurements on a number of VHF, UHF, and microwave amplifiers, both silicon (Si) bipolar junction transistor (BJT) and gallium arsenide (GaAs) field effect transistor (FET) based, electronic phase shifters, frequency dividers and multipliers, etc., which are commonly used in a wide variety of frequency source and synthesizer applications are presented. The measurement technique has also been used to evaluate feedback oscillator components, such as the loop and buffer amplifiers, which can play important roles in determining an oscillator's output phase noise spectrum (often in very subtle ways). While some information has previously been published related to component residual phase noise properties, it generally focused on the flicker noise levels of the devices under test, for carrier offset frequencies less than 10 kHz. The work reported herein makes use of an extremely low noise, 500 MHz surface acoustic wave resonator oscillator (SAWRO) test source for residual phase noise measurements, both close-to-and far-from-the-carrier. Using this SAWRO-based test source at 500 MHz, we have been able to achieve a measurement system phase noise floor of -184 dBc/Hz, or better, for carrier offset frequencies greater than 10 kHz, and a system flicker phase noise floor of -150 dBc/Hz, or better, at 1 Hz carrier offset. The paper discusses the results of detailed residual phase noise measurements performed on a number of components using this overall system configuration. Several interesting observations related to the residual phase noise properties of moderate to high power RF amplifiers, i.e., amplifiers with 1 dB gain compression points in the range of +20 to +33 dBm, are highlighted     

Phase noise performance of microwave analog frequency dividers: application to the characterization of oscillators up to the millimeter-wave range

The phase noise performance of two different microwave analog frequency dividers is characterized and compared with the values obtained using simple theories of noise in injection-locked systems. The direct measurement of the divider noise with a low phase noise synthesizer is not accurate enough, and the residual noise technique is used. The noise levels observed using this technique, between -120 and -155 dBc/Hz at a 10 kHz offset frequency, demonstrate that this divider noise is much lower than the phase noise of most microwave free running oscillators, even if this noise is still high with respect to the residual noise of amplifiers realized with the same active devices. The down conversion of microwave sources up to 40 GHz, is proposed as an application example.     

Relationship of AM to PM noise in selected RF oscillators

We have studied the amplitude modulation (AM) and phase modulation (PM) noise in a number of 5 MHz and 100 MHz oscillators to provide a basis for developing models of the origin of AM noise. To adequately characterize the AM noise in high performance quartz oscillators, we found it necessary to use two-channel cross-correlation AM detection. In the quartz oscillators studied, the power spectral density (PSD) of the f(-1) and f(0) regions of AM noise is closely related to that of the PM noise. The major difference between different oscillators of the same design depends on the flicker noise performance of the resonator. We therefore propose that the f(-1) and f(0) regions of AM and PM noise arise from the same physical processes, probably originating in the sustaining amplifier.     

Origin of 1/f PM and AM noise in bipolar junction transistor amplifiers

In this paper we report the results of extensive research on phase modulation (PM) and amplitude modulation (AM) noise in linear bipolar junction transistor (BJT) amplifiers. BJT amplifiers exhibit 1/f PM and AM noise about a carrier signal that is much larger than the amplifiers thermal noise at those frequencies in the absence of the carrier signal. Our work shows that the 1/f PM noise of a BJT based amplifier is accompanied by 1/f AM noise which can be higher, lower, or nearly equal, depending on the circuit implementation. The 1/f AM and PM noise in BJTs is primarily the result of 1/f fluctuations in transistor current, transistor capacitance, circuit supply voltages, circuit impedances, and circuit configuration. We discuss the theory and present experimental data in reference to common emitter amplifiers, but the analysis can be applied to other configurations as well. This study provides the functional dependence of 1/f AM and PM noise on transistor parameters, circuit parameters, and signal frequency, thereby laying the groundwork for a comprehensive theory of 1/f AM and PM noise in BJT amplifiers. We show that in many cases the 1/f PM and AM noise can be reduced below the thermal noise of the amplifier.     

Microwave interferometry: application to precision measurements and noise reduction techniques

A concept of interferometric measurements has been applied to the development of ultra-sensitive microwave noise measurement systems. These systems are capable of reaching a noise performance limited only by the thermal fluctuations in their lossy components. The noise floor of a real time microwave measurement system has been measured to be equal to -193 dBc/Hz at Fourier frequencies above 1 kHz. This performance is 40 dB better than that of conventional systems and has allowed the first experimental evidence of the intrinsic phase fluctuations in microwave isolators and circulators. Microwave frequency discriminators with interferometric signal processing have proved to be extremely effective for measuring and cancelling the phase noise in oscillators. This technique has allowed the design of X-band microwave oscillators with a phase noise spectral density of order -150 dBc/Hz at 1 kHz Fourier frequency, without the use of cryogenics. Another possible application of the interferometric noise measurements systems include “flicker noise-free” microwave amplifiers and advanced two oscillator noise measurement systems     

Secondary standard for PM and AM noise at 5, 10, and 100 MHz

A practical implementation of a portable secondary standard for phase modulation (PM) and amplitude modulation (AM) noise at 5, 10, and 100 MHz is described. The accuracy of the standard for both PM and AM noise is +0.14 dB, and the temperature coefficient is less than 0.02 dB/K. The noise floor S_φ (10 kHz) of the standard for PM noise measurements is less than -190 dBC relative to 1 rad²/Hz at 5, 10, and 100 MHz. The noise floor for AM measurements depends on the configuration. A calibrated level of PM and AM noise of approximately -130±0.2 dB relative to 1 rad² /Hz (for Fourier frequencies from approximately 1 Hz to 10% of the carrier frequency) is used to evaluate the accuracy versus Fourier frequency. Similar PM/AM noise standards are under test at 10 GHz. This new standard can also be used as an alternative to the normal method of calibrating the conversion sensitivity of the PM/AM detector for PM/AM measurements. Some types of time-domain measurement equipment can also be calibrated     

An investigation of high-frequency bias-induced tape noise

Bias-induced tape noise remains a major limitation of the SNR in audio magnetic tape recording systems. Defined as the increment in system noise incurred when the bias oscillator is turned on, the noise can originate from a number of different causes; namely, bias oscillator harmonic distortion, magnetized heads, the earth's magnetic field, and an intrinsic noise source. The latter noise source is our primary concern here. Such record system parameters as head-to-tape spacing, gap length, bias current, and bias frequency were investigated with regard to their influence on this intrinsic bias noise source. Two models of the mechanism of intrinsic bias noise are examined. The first, the "amplitude modulation model." proposes that bias noise is generated by amplitude modulation of the recorded bias signal by the physical and magnetic variations of the head-tape system. In this model, bias noise is merely the lower AM sidebands of the recorded bias signal. The second model relates bias noise to the interaction fields in erased tape. This model proposes that these fields behave similarly to normal recording fields and can be "re-recorded" on the tape at an enhanced level. The two proposed mechanisms are examined in the light of the experimental data. The amplitude modulation model is shown to agree with all the observed data with the exception of the existence of bias noise at bias wavelengths smaller than the particle size. The second model, which does not incorporate a wavelength dependency of bias noise, is in qualitative agreement with the observed data. Methods are discussed for reducing the bias noise without materially affecting the system performance.     

Study of the excess noise associated with demodulation of ultra-short infrared pulses

The demodulation of ultra-short light pulses with photodetectors is accompanied by excess phase noise at the pulse repetition rate and harmonics in the spectrum of the photocurrent. The major contribution to this noise is power fluctuations of the detected pulse train that, if not compensated for, can seriously limit the stability of frequency transfer from optical to microwave domain. By making use of an infrared femtosecond laser, we measured the spectral density of the excess phase noise, as well as power-to-phase conversion for different types of InGaAs photodetectors. Noise measurements were performed with a novel type of dual-channel readout system using a fiber coupled beam splitter. Strong suppression of the excess phase noise was observed in both channels of the measurement system when the average power of the femtosecond pulse train was stabilized. The results of this study are important for the development of low-noise microwave sources derived from optical "clocks" and optical frequency synthesis.     

Guidelines for designing BJT amplifiers with low 1/f AM and PM noise

In this paper we discuss guidelines for designing linear bipolar junction transistor amplifiers with low 1/f amplitude modulation (AM) and phase modulation (PM) noise. These guidelines are derived from a new theory that relates AM and PM noise to transconductance fluctuations, junction capacitance fluctuations, and circuit architecture. We analyze the noise equations of each process for a common emitter (CE) amplifier and use the results to suggest amplifier designs that minimize the 1/f noise while providing other required attributes such as high gain. Although we use a CE amplifier as an example, the procedure applies to other configurations as well. Experimental noise results for several amplifier configurations are presented.     

A model for phase noise generation in amplifiers

In this paper, a model is presented for predicting the phase modulation (PM) and amplitude modulation (AM) noise in bipolar junction transistor (BJT) amplifiers. The model correctly predicts the dependence of phase noise on the signal frequency (at a particular carrier offset frequency), explains the noise shaping of the phase noise about the signal frequency, and shows the functional dependence on the transistor parameters and the circuit parameters. Experimental studies on common emitter (CE) amplifiers have been used to validate the PM noise model at carrier frequencies between 10 and 100 MHz     

Phase noise in surface-acoustic-wave filters and resonators

Measurements of the phase noise modulation imparted on UHF carriers by surface-acoustic-wave (SAW) filters and resonators have been made using an HP 3047 spectrum analyzer. Three different types of SAW phase noise were observed. One type can be explained by temperature fluctuations. It is characterized by a spectral density of phase fluctuations which decreases as 1/f(2). The predominant noise mechanism in most SAW devices has a 1/f spectral density. The source of this noise is unknown, but it appears to be associated with both acoustic propagation and transduction. In filters fabricated on lithium niobate substrates, a third noise mechanism is evidenced. This mechanism produces nonstationary noise bursts that appear to originate in the transducer region. Experiments have been carried out on substrate materials, transducer metallizations, and over acoustic path lengths. The means by which low-frequency fluctuations are mixed to the carrier frequency have been studied.     

A programmable ultra-low noise X-band exciter

A programmable ultra-low noise X-band exciter has been developed using commercial off-the-shelf components. Its phase noise is more than 10 dB below the best available microwave synthesizers. It covers a 7% frequency band with 0.1-Hz resolution. The X-band output at +23 dBm is a combination of signals from an X-band sapphire-loaded cavity oscillator (SLCO), a low noise UHF frequency synthesizer, and special-purpose frequency translation and up-conversion circuitry.     

Measurement of Static AM-PM Conversion in Frequency Multipliers

The generation of very narrow spectral lines in the far-infrared by frequency synthesis from VHF precision sources requires very stringent specifications on the spectral purity of the source and on the phase noise introduced by the synthesizer. The dc measurements of the AM-PM conversion in different multiplier stages are presented in this paper: stages employing transistors, varactors and step-recovery diodes are examined. The results show that a few degrees per dB of input level variation are typical for the AM-PM conversion reported to the input in a simple, carefully built and well tuned multiplier stage employing any of the mentioned solid state devices. This value is shown to be unlikely to degrade more than the expected n2 factor the spectral purity of a signal with AM noise as low with respect to PM noise as it is in the output of a good quartz crystal controlled oscillator; however, such a conversion could become a source of phase noise, with degradation of the spectral purity, for a signal with a slightly worse AM noise.     

Phase noise performance of analog frequency dividers

The phase noise performance obtainable using silicon and GaAs-based TTL (transistor-transistor logic) and ECL (emitter-coupled logic) logic level digital frequency dividers is discussed. Measurement of the spectral performance of two types of analog dividers is reported: a parametric divider using varactor diodes and a regenerative-type divider incorporating a double-balanced mixer in the oscillator feedback circuit. Both dividers were configured for divide-by-two operation at VHF. Evaluation indicates the regenerative divider is capable of providing much lower phase noise than conventional digital logic level devices. The regenerative divider can be successfully operated over bandwidths in excess of an octave, and the design lends itself to small (i.e. TO-8) modular package implementation. Operating frequencies are bounded only by the range of the mixer and RF amplifier utilized and, as such, should extend from HF through microwave.     

A novel noise figure and gain test set for microwave devices

A new instrument for the measurement of noise and gain of microwave devices is presented. It differs from the commercial ones in the accomplishment of the gain measurement and is also useful for measuring mismatched devices such as transistors, The instrument is driven via HP-IB by a PC and a user-friendly virtual panel is designed to perform all the required operations. Also included is the possibility of removing the second-stage noise contribution and correcting various sources of error (source ENR variations, temperature variations, etc.). The test set provides a very good accuracy for both matched and mismatched devices, usually limited by source ENR accuracy and step attenuator repeatability. The performances of the instrument are compared with those offered by commercial instrumentation