应急广播农村大喇叭系统现状分析

应急广播农村大喇叭系统在有效应对抗自然灾害、积极宣传地方政务、促进农村广播事业等方面发挥着巨大作用。目前福建、浙江、四川、青海等多地区已完成或开始了农村大喇叭系统的改造建设,致力于形成一套可管可控、标准规范、安全可靠的农村大喇叭系统。基于我国广电网络现状,目前应急广播农村大喇叭系统实现的主流方式包括：基于有线/无线RDS调频副载波、基于IP网络、和有线/地面数字电视TS流传输的三种方式,本文将对这三种方式进行分析,为日后应急广播农村大喇叭系统建设提供参考。     

应急广播大喇叭系统自动化测试流程分析

应急广播大扬声器系统是目前我国应急广播建设中开展快、覆盖范围广、群众基础好的一个环节.目前全国范围内有大量的省、市、县都在开展应急广播大扬声器系统的相关建设,如何确保建成的系统符合统一标准,保障系统的兼容性和可扩展性成为一个重要课题.本文将按照广电总局现有应急广播大扬声器技术要求,提出一种应急广播自动化测试流程,为日后应急广播大扬声器系统和设备的标准化测试提供一种快捷和规范的测试流程参考.     

基于地面数字电视覆盖网的农村应急广播系统设计与实现

本文结合应急广播终端控制与响应相关科研情况和部分地区应急广播农村大喇叭系统建设实践情况,探讨了一种基于地面数字电视的农村应急广播大喇叭系统的总体架构、系统组成与技术实现思路,并重点分析了该种技术实现方式在传输覆盖资源利用、应急广播播发管理、运行维护以及灾备设计等方面的优势。     

一种有线数字电视机顶盒远程唤醒实现方法

基于数字电视尤其是有线数字电视进行应急广播的相关技术获得很大进展,其技术实现模式和系统也日益受到相关科研和应用部门的重视,但目前大多数电视机顶盒日常待机时调谐器和解调解码等模块都处于待机甚至断电状态,无法响应前端系统发出的远程唤醒信号,从而无法启动应急广播相关流程。为此,提出了一种低成本低功耗的有线数字电视机顶盒的远程二次唤醒实现方法,很好地解决了作为应急广播终端的电视机顶盒远程唤醒和启动的问题。     

一种低成本低功耗的有线数字电视机顶盒远程唤醒实现方法

【摘要】基于数字电视尤其是有线数字电视进行应急广播的相关技术获得很大进展,其技术实现模式和系统也日益受到相关科研和应用部门的重视,但目前大多数电视机顶盒日常待机时调谐器和解调解码等模块都处于待机甚至断电状态,无法响应前端系统发出的远程唤醒信号,从而无法启动应急广播相关流程,提出了一种低成本低功耗的有线数字电视机顶盒的远程二次唤醒实现方法,很好的解决了作为应急广播终端的电视机顶盒远程唤醒和启动的问题。     

云南省县级应急广播体系建设模式研究

县级应急广播体系直接承担着面向人民群众宣传党和国家的方针政策、播发应急信息和提供公共文化服务的任务,是应急广播进入千家万户的重要基础,也是应急广播体系建设的重点和难点。本文以云南省江城县为例,对县级应急广播体系建设模式进行研究与实践,通过调频广播、地面数字电视广播、有线数字电视广播、大喇叭系统等多种方式,实现应急广播信号在全县的综合覆盖,为云南省应急广播体系建设奠定基础。     

基于DVB-C有线数字电视平台的应急广播系统

介绍了基于DVB-C有线数字电视平台的应急广播系统,依托现有有线数字电视播控与传输平台,应急广播指令与音频信号复用到数字电视播控平台.利用有线电视共缆传输,终端设备的技术实现与数字电视机顶盒基本一致.以全新的理念全面实现了音频/文字信息数字化、播控自动化、管理智能化、扩展自由化,与现有HFC网络完全融合,是广电运营商建设应急广播系统的理想的解决方案.     

基于有线数字电视终端的应急广播系统探讨

本文从应急广播和其对终端的要求的概念出发,对有线数字电视网传输应急广播的优势、基本方案、相关规范的应用和对原相关规范的修改建议以及基于有线数字电视终端应急广播的实现机制进行了阐述,最后对“十二五”中后期有线数字电视应急广播的完善提出了自己的观点。     

农村应急广播系统解决方案——基于RDS副载波的调频多通道寻址广播系统

应急广播作为一种传统的传播手段当前被赋予新的历史使命,根据国家构建公共文化服务体系的要求,建设新型农村应急广播势在必行。针对农村应急指挥手段落后、反应速度慢、效率低的状况,以县(市)为一系统单元,采用智能编码播控技术,以有线电缆为传输手段,建立一套完整的应急广播系统,实现县(市)、乡(镇)、村3级可控播出,主要介绍了基于RDS副载波的调频多通道寻址广播系统解决方案。     

DVB-C标准下的应急广播技术研究

本文从应急广播和其对终端的要求的概念出发,对有线数字电视网传输应急广播的优势、基本方案、相关规范的应用和对原相关规范的修改建议以及基于有线数字电视终端应急广播的实现机制进行了阐述,最后对“十二五”中后期有线数字电视应急广播的完善提出见解。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.