Synthesis of GaN films on porous silicon substrates

A novel and simple method was employed to synthesize GaN films on porous silicon (PS) substrates. GaN films were obtained through the reaction between NH3 and Ga2O3 films deposited on the substrates with magnetron sputtering. Since GaN and PS are all good materials for luminescence, it is expected to obtain some new properties from GaN on PS. The samples were analyzed with X-ray diffraction (XRD) to identify crystalline structure. Fourier transmit infrared (FTIR) spectrum was used to analyze the chemical state of the samples. The films were observed with scanning electron microscopy (SEM) and were found to consist of many big crystal grains. Photoluminescence (PL) spectrum was used to illuminate the optical property of the GaN films.     

Enhancement of the photoluminescence of porous silicon by sputter deposition of semitransparent metal films

Optoelectronic devices based on porous silicon (PS) undergo substantial degradation in luminescence with aging due to atmospheric oxidation. The passivation of PS has been reported with a transparent conducting material or a semi-transparent metal. In this paper, we report enhancement of the photoluminescence (PL) of PS by the passivation of PS with ultrathin metal films such as silver (Ag), aluminum (Al), and gold (Au). It has been found that Ag and Au are respectively most and least effective in enhancing the PL of PS among those three different metals. The highest PL enhancing effect of Ag is mostly attributed to the high electrical conductivity of Ag, whereas the lowest PL enhancing effect of Au is due to the lowest optical transmittance of Au. The details of the PL enhancing effect of metal passivation are discussed with the aid of FTIR analysis results.     

ZnO nanocoral reef grown on porous silicon substrates without catalyst

Porous silicon (PS) technology is utilized to grow coral reef-like ZnO nanostructures on the surface of Si substrates with rough morphology. Flower-like aligned ZnO nanorods are also fabricated directly onto the silicon substrates through zinc powder evaporation using a simple thermal evaporation method without a catalyst for comparison. The characteristics of these nanostructures are investigated using field-emission scanning electron microscopy, grazing-angle X-ray diffraction (XRD), and photoluminescence (PL) measurements of structures grown on both Si and porous Si substrates. The texture coefficient obtained from the XRD spectra indicates that the coral reef-like nanostructures are highly oriented on the porous silicon substrate with decreasing nanorods length and diameter from 800-900 nm to 3.5-5.5 μm and from 217-229 nm to 0.6-0.7 μm, respectively. The PL spectra show that for ZnO nanocoral reefs the UV emission shifts slightly towards lower frequency and the intensity increase with the improvement of ZnO crystallization. This non-catalyst growth technique on the rough surface of substrates may have potential applications in the fabrication of nanoelectronic and nanooptical devices.     

Comparative study of ZnO nanostructures grown on silicon (1 0 0) and oxidized porous silicon substrates with and without Au catalyst by chemical vapor transport and condensation

ZnO tetrapods and rods were grown on silicon and thermally oxidized porous silicon substrates with and without Au catalyst layer by carbothermal reduction of ZnO powder through chemical vapor transport and condensation method (CVTC). Porous silicon was fabricated by electrochemical etching of silicon in HF solution. The effect of substrates on morphology, structure and photoluminescence spectra of ZnO nanostructures has been studied. The texture coefficient (TC) of each sample was calculated from XRD data that demonstrated random orientation of ZnO nanostructures on the oxidized porous silicon substrate. Moreover, TC indicates the effect of Au catalyst layer on formation of more highly oriented ZnO nanorods. The morphology of the samples was investigated by SEM which confirms formation of ZnO nanostructures on oxidized porous silicon substrates with and without catalyst. A blue-green emission has been observed in ZnO nanostructures grown on Si and the oxidized PS substrates without Au catalyst layer by PL measurements.     

INFLUENCE OF NITROGEN ON THERMAL WARPAGE IN CZOCHRALSKI SILICON WAFERS

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利用PS模板制备多孔SrFe12O19薄膜的研究

本文以提拉浸渍法使用聚苯乙烯(PS)球模板制备了有序多孔结构的锶铁氧体(SrFe12O19)薄膜。将微乳液聚合法合成的PS球,通过提拉浸渍法有序地组装在硅片基板上形成PS模板;使用溶胶-凝胶法制备SrFe12O19前驱体溶胶,再采用提拉浸渍法使SrFe12O19前驱体溶胶填充PS模板的空隙,在900 ℃保温2 h去除PS球后即制得多孔SrFe12O19薄膜。重点研究了聚乙烯吡咯烷酮(PVP)的含量对PS球微观形貌,浸渍时间对PS模板以及多孔SrFe12O19薄膜微观形貌的影响,并对多孔SrFe12O19薄膜的形成机理进行了讨论,建立了相应的模型。结果表明：添加0.2 g的PVP可得到粒径均匀的PS球,且微球之间空隙明显;将硅片在PS球乳液中浸渍10 s可得到单层有序的PS模板;当PS模板在SrFe12O19前驱体溶胶中浸渍10 s时可制备出孔径约200 nm的蜂窝状多孔结构的纯SrFe12O19相薄膜,其表现出优异的硬磁性能：饱和磁化强度为27.9 emu/g,剩磁为15.5 emu/g,矫顽力为2613.4 Oe。     

Photoluminescent studies on porous silicon/tin oxide heterostructures

Porous silicon (PSi) structure was formed at different current densities in the range of 5-60 mA/cm² by the electrochemical anodization of PSi wafers etching in HF for 30 min. The PSi was characterized by X-ray diffraction studies. The PSi samples prepared at current densities above and below 30 mA/cm² show PL spectra with asymmetric and overlapped peaks. On the top surface as well as inside the pores of this PSi structures the precursor sol-gel was incorporated by the spin coating technique and SnO₂ was formed by heating at 400 °C in air. Peaks pertaining to PSi along with those corresponding to SnO₂ were observed, which confirmed SnO₂ formation as thin film on the PSi surface. The PL spectra of SnO₂/PSi structure aged for two months indicated a reduction in PL intensity but remained constant afterwards. SnO₂ not only modifies the nature of silicon nanopores but also is expected to influence the interface states in SnO₂/PSi junction.     

基于磁流变技术的微孔内壁抛光装置研制及性能研究

目的基于磁流变技术研制适用于微孔内壁抛光的装置。方法利用磁流变抛光液的性质,借鉴传统的抛光原理,设计并研制了适用于微孔内壁抛光的抛光装置,并对该装置进行了一系列的性能研究。基于该微孔内壁抛光装置对多孔镍样品及平片硅样品进行了不同条件下的抛光研究,并对抛光结果进行了分析。结果此抛光装置的性能研究结果表明,该装置产生的交变磁场均匀、稳定,符合模拟预期,可用于进一步的样品抛光研究。利用此抛光装置,虽然在多孔镍样品的抛光上没有较为明显的效果,但平片硅样品的粗糙度却由1.24 nm下降至0.56 nm,具有较大改善。在平片硅样品的抛光研究中,进一步发现随着时间的增加,其粗糙度不断下降。结论自行搭建的基于磁流变技术的微孔内壁抛光装置可对平片硅进行抛光。     

Improving color rendering index of Mn-doped ZnO nanorods on silicon-based substrate

Porous silicon pillar array(PSPA) samples which are ideal substantial materials with dominant electronic and luminescence properties were prepared by surface etching method. ZnO nanorods with or without Mn doping grown uniformly and aligned onto PSPA regardless of lattice matching show various photoluminescence(PL)properties. The doped Mn ions in ZnO nanorods were directly observed by X-ray photoelectron spectroscopy(XPS),and ZnO structures were detected by X-ray diffraction(XRD). As the doping concentration increases,XRD peaks of ZnO nanorods shift to low angle. The influences of doping Mn ions on luminescence properties of ZnO nanorods were investigated. Except for the ultraviolet(UV) PL band, the broad PL band is observed at visible region. The band could be divided into three separate bands(orange, green and red) by Lorentzian deconvolution. The intensity of orange PL band firstly increases then decreases, and then gets the maximum at the doping Mn-to-Zn molar ratio of 2.0:100.0 which is the most effective doping concentration. The green PL band is attributed to zinc vacancy of ZnO, the orange PL band to Mn ions recombination of itself, and the red PL band to oxygen vacancy of ZnO, respectively. As the Mn-doped ZnO nanorods could emit yellow green luminescence excited by UV radiation, and doped Mn ions could improve the color rendering index of the luminescence, the nanorods could be used as promising white-light emitters in the future.     

用于高品质射频集成电感的厚膜多孔硅背向生长技术

介绍了一种用于高品质射频集成电感的厚膜多孔硅背向生长技术.ASITIC模拟证明厚膜多孔硅衬底能够显著提高射频集成电感的性能.采用背向生长技术成功地制备出了厚膜多孔硅包括穿透整个硅片的多孔硅,并证实了该技术作为后处理工艺应用于CMOS技术的可行性.ESEM对所制样品的表面和截面形貌进行了分析.通过多组实验,得出了多孔硅生长速度与腐蚀电流密度的准线性关系.     

基于包混和复合添加工艺的多孔碳化硅陶瓷的制备和性能

采用包混工艺合成核-壳结构的硅-树脂先驱体粉体,引入Al2O3-SiO2-Y2O3复合添加剂,通过成型、炭化和烧结工艺制备多孔碳化硅陶瓷。分析多孔碳化硅陶瓷样品的物相、形貌、孔隙率、热导率、热膨胀系数和抗热震性能。结果表明：复合添加能够在较低的温度下制得多孔碳化硅陶瓷;陶瓷样品的晶粒较小,明显增强了多孔碳化硅陶瓷的导热性能;复合添加提高了碳化硅陶瓷的抗热震性能,添加Al2O3-SiO2-Y2O3并且在1650℃下烧结制备的多孔碳化硅陶瓷经过30次热震后的抗弯强度损失率为6.5%;陶瓷样品的孔壁更加光滑,孔分布更均匀;复合添加对多孔碳化硅陶瓷热膨胀系数的影响较小。     

热暴露对新型铝基活塞合金组织和性能的影响

研究了Al-Si-Cu-Mg-Ni新型活塞合金经过固溶时效热处理后,再在350℃热暴露不同时间(0～1 000 h)后的显微组织和性能.结果表明:随着暴露时间的延长,合金的室温和高温剩余强度明显下降,在0～10h,强度降低较快,10h后,合金的室温和高温抗拉强度基本稳定在209 MPa和51 MPa;随着暴露时间的延长,合金的伸长率明显提高,在0～1 00 h,伸长率显著提高,100 h后,其室温和高温伸长率基本稳定在2.8％和8.9％.随着热暴露时间延长,热处理组织中的块状初生硅无明显变化,粒状共晶硅长大并粗化,均匀地分布于基体中,Q和θ相长大并粗化.     

Oxidation behavior of oxidation protective coatings for C/C-SiC composites at 1 500℃

Porous carbon/carbon preforms were infiltrated with melted silicon to form C/C-SiC composites. Three-layer Si-Mo coating prepared by slurry painting and SiC/Si-Mo multilayer coating prepared by chemical vapor deposition(CVD) alternated with slurry painting were applied on C/C-SiC composites, respectively. The oxidation of three samples at 1 500 ℃ was compared. The results show that the C/C-SiC substrate is distorted quickly. Three-layer Si-Mo coating is out of service soon due to the formation of many bubbles on surface. The mass loss of coated sample is 0.76% after 1 h oxidation. The sample with SiC/Si-Mo multilayer coating gains mass even after 105 h oxidation. SiC/Si-Mo multilayer coating can provide longtime protection for C/C-SiC composites and has excellent thermal shock resistance. This is attributed to the combination of dense SiC layer and porous Si-Mo layer. Dense SiC layer plays the dual role of physical and chemical barrier, and resists the oxidation of porous Si-Mo layer. Porous Si-Mo layer improves the thermal shock resistance of the coating.     

Characteristics of Si~ /B~ dual implanted silicon wafers

1　ＩＮＴＲＯＤＵＣＴＩＯＮＦｏｒｓｉｌｉｃｏｎ ｐｈｏｔｏ ｄｉｏｄｅｓ (ＳＰＤ) ,ｉｔｉｓｎｅｃｅｓｓａｒｙｔｏｆｏｒｍｓｈａｌｌｏｗｐ ｎｊｕｎｃｔｉｏｎｓｗｉｔｈｖｅｒｙｌｏｗｒｅｖｅｒｓｅ ｂｉａｓｌｅａｋａｇｅｃｕｒｒｅｎｔｄｅｎｓｉｔｉｅｓ .Ｔｏｆｏｒｍｔｈｉｎｐ ｌａｙ ｅｒｓ ,ｂｏｔｈｔｈｅｄｏｐｉｎｇａｎｄａｎｎｅａｌｉｎｇｓｔｅｐｓｍｕｓｔｂｅｏｐ ｔｉｍｉｚｅｄ .Ｉｏｎｉｍｐｌａｎｔａｔｉｏｎｓｔｅｐｓｍｕｓｔｂｅｔａｋｅｎｔｏｅ ｌｉｍｉｎａｔｅｉｏｎｃｈａｎｎｅｌｌｉｎｇ[1] …     

Applications of porous silicon thin films in solar cells and biosensors

An overview of the applications of porous silicon (PS) thin films, as antireflection coatings (ARC) in silicon solar cells and transducers in biosensors, is presented. The reflectance spectra of PS films have been compared with other conventional ARCs (such as SiN_x TiO₂/MgF₂ and ZnS), and optimal PS ARC with minimum reflectance has been obtained. The implementation of PS into an industrially compatible screen-printed (SP) solar cell by both the electrochemical etching (ECE) and chemical etching (CE) methods are reviewed. Porous silicon films, formed via ECE for short anodization times, on textured n⁺ emitter ofc-Si solar cell having SP front and back contacts, lead to improvements in the performance of solar cells and demonstrate their viability in industrial applications.     

Porous AlN ceramic substrates by reaction sintering

A novel approach was undertaken in producing porous AlN microelectronics tapes with high thermal conductivity and low dielectric constant. This method essentially utilised polymer micro-spherical powders that were used as a sacrificial mould to introduce controlled porosity into the green tapes during pyrolysis. The Al₂O₃-rich porous green tapes were then reaction sintered at 1680 °C for 12 h to achieve porous AlN tapes. This work builds upon the previously developed novel reaction sintering process that densified and converted Al₂O₃-rich tapes (Al₂O₃–20 wt.% AlN–5 wt.% Y₂O₃) to AlN tapes at a relatively low sintering temperature of 1680 °C. The sintering behaviour of the porous tapes was investigated, and the effects of the microspheres particle size and volume addition were studied. The microspheres successfully contributed to the significant reduction of tape density by porosity, and this contributed to lowering its dielectric constant. Dielectric constant of the AlN tapes were reduced to about 6.8–7.7 whilst thermal conductivity values were reasonable at about 46–60 W/m K. Coefficient of thermal expansion (CTE) values showed a linear trend according to phase composition, with the porous AlN tapes exhibiting CTE values of (4.4–4.8)×10⁻⁶ °C⁻¹, showing good CTE compatibility with silicon, at 4.0×10⁻⁶ °C⁻¹. The added porosity did not significantly affect the CTE values.     

Surface damage in wire-cut silicon wafers

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Influence of temperature on the microstructure of V2O5 film prepared by DC magnetron sputtering

V2O5 films were prepared on silicon wafers by DC magnetron sputtering and post-annealing under various conditions. The influence of depositing and post-annealing temperatures on microstructure of V2O5 films was studied by XRD and Raman scattering measurements. The results reveal that sputtered V2O5 films show preferred growth orientation along (001) planes and the c -axis is perpendicular to the silicon substrate surface. It is interesting to find that both the V2O5 film deposited at temperature of 511 ℃ and the one annealed at 500℃ exhibit desirable layer-type structure of orthorhombic symmetry. Such layer-typed V2O5 films are promising candidates for cathodes of rechargeable lithiumor magnesium thin-film batteries.     

疏水性安全壳壁面的硅表面微孔结构制备

为构建疏水性安全壳内壁面涂层以提高事故中的传热能力,以Si作为功能涂层材料,在其表面上制备了不同圆孔间距及圆孔深度的微孔阵列样品以研究微米结构对表面疏水特性的影响,并对其疏水机理进行分析。结果表明,所制备的微孔样品润湿特性均符合Cassie-Baxter模型,在本征接触角为69.5°的Si表面通过微孔结构调控可显著提高疏水特性,获得了具有140°接触角的优异疏水特性样品而未进行表面化学修饰。研究结果为设计安全壳涂层材料及其表面微结构提供了技术方案,为强化核电站非能动安全壳冷却系统传热性能提供了解决思路。     

烧结法制备粉煤灰微晶玻璃

以相图为理论依据采用烧结工艺制备微晶玻璃。运用差热分析(DTA)、XRD、SEM、显微硬度测试手段,研究其显微结构和性能。结果表明,在700℃保温1 h、再以10℃/min升温至1100℃保温1 h,能够获得以硅灰石和透辉石为主要晶相、致密无孔的微晶玻璃。