Study and modeling of heat transfer during the solidification of semi-crystalline polymers

Semi-crystalline polymers are materials whose behavior during their cooling is difficult to model because of the strong coupling between the crystallization, heat transfer, pressure and shear. Thanks to two original apparatus we study solidification of such a polymer without shear. Firstly the comparison between experimental results and a numerical model will permit to validate crystallization kinetic for cooling rate reachable by DSC. The second experiment makes it possible to analyze solidification for high cooling rate, corresponding to some manufacturing processes. It appears that crystallization has an influence on the thermal contact resistance.     

离心铸造太阳电池硅片液态成形机制的研究

为了将离心铸造技术成功地移植到低成本超薄多晶太阳电池硅片的成形工艺上，提出了ＥＬＣＣ技术的硅片液态成形方法，即将铸模型腔预热至硅熔点以上温度，过热的硅液被浇注到型腔后，在离心力的作用下始终保持液态充型。这种成形机制易于实现厚度小于１ｍｍ的硅片的完整成形，而且对模具转速、硅液过热度等要求较低。采用该方法，硅片的成形与结晶不会同时发生，可以在硅片液态成形后，采用定向凝固的方法获得粗大的定向柱晶组织，提高硅片的光伏性能。采用理论分析、计算机模拟与工艺实验相结合的方法，对ＥＬＣＣ技术硅片液态成形机制进行了研究，为进一步对硅片凝固过程组织控制的研究奠定基础。     

24对棒多晶硅还原炉的辐射传热数值模拟

在还原炉中制备多晶硅需要密闭且高温的环境,用传统检测方法获得炉内温度场分布比较困难。本文基于FLUENT仿真计算平台,对硅棒生长至50、100、150 mm时的24对棒多晶硅还原炉的辐射传热进行三维数值模拟,得出还原炉内不同硅棒直径时的温度场分布。通过比较模拟的出口尾气温度与多晶硅实际生产中出口尾气的温度,验证模拟结果的可靠性。探讨温度对多晶硅生长的影响,为操作人员在多晶硅生产中控制炉内温度提供理论指导。     

Simulation of the crystallisation of silicon ribbons on substrate

Today's photovoltaic market is divided into multicrystalline silicon wafers from ingot casting and monocrystalline wafers from Czochralski crystals. In both cases large crystals have to be cut into thin wafer geometry. As an alternative approach the EFG process and the string ribbon process are in industrial use for the production of silicon ribbons directly out of the melt. One future alternative for a high production process is the Ribbon Growth on Substrate (RGS) process which is now in the final development stage for industrial production of silicon ribbons.In this paper we will report simulation results for the crystallisation of silicon melt in contact with a substrate. This is the basis not only for the RGS process but also for thin film processes like laser remelting of amorphous Si. The results show the general solidification behaviour at the tip region of a growing Si sheet. Different crystal growth modes are predicted resulting in different grain structures of the silicon sheet as observed experimentally.     

内燃凿岩机热力过程的数值模拟

本文介绍了作者多年来在内燃凿岩机工作过程数值模拟方面的研究进展,着重讨论了各气室热力过程和斜气道不定常流动过程的模型建立、基本方程、计算原理及计算结果。计算与实测结果的比较表明,计算结果令人满意,可以满足工程要求。内燃凿岩机整机工作过程计算机数值模拟的成功,为揭示其工作机理、性能预测和参数优化提供了有力的工具。     

Steps towards the development of an experimentally verified simulation of pool nucleate boiling on a silicon wafer with artificial sites

Nucleate boiling is a very effective heat transfer cooling process, used in numerous industrial applications. Despite intensive research over decades, a reliable model of nucleate pool boiling is still not available. This paper presents a numerical and experimental investigation of nucleate boiling from artificial nucleation sites.The numerical investigation described in the first section of the paper is carried out by a hybrid mechanistic numerical code first developed at the University of Ljubljana to simulate the temperature field in a heated stainless steel plate with a large number of nucleation sites during pool boiling of water at atmospheric pressure. It is now being redeveloped to interpret experiments on pool boiling at artificial sites on a silicon plate and as a design tool to investigate different arrangements of sites to achieve high heat fluxes. The code combines full simulation of the temperature field in the solid wall with simplified models or correlations for processes in the liquid-vapour region. The current capabilities and limitations of the code are reviewed and improvements are discussed. Examples are given of the removal of computational constraints on the activation of sites in close proximity and improvements to the bubble growth model. Preliminary simulations are presented to compare the wall conditions to be used in the experiments on silicon at Edinburgh University with the conditions in current experiments on thin metal foils at Ljubljana.An experimental rig for boiling experiments with artificial cavities on a 0.38 mm thick silicon wafer immersed in FC-72, developed at Edinburgh University, is described in the second part of the paper.     

Simulation of solar heating systems—an overview

Process simulation has become an accepted tool for the performance, design, and optimization of thermal processes. Solving the mathematical models representing solar heating process units and systems is one of the most tedious and repetitive problems. Nested iterative procedures are usually needed to solve these models. To tackle these problems, several researchers have developed different methods, techniques, and computer programs for the simulation of very wide verity of solar heating process units and systems.It is of interest in this work to characterize and classify these methods, techniques, and programs in order to better understand their relations, types, structures, and procedures.The simulation problems are outlined; the simulation programs are grouped into two main types; special purpose, and general-purpose programs. Sequential and simultaneous computational sequences are illustrated. Simulator structure, program evaluation, and numerical techniques are summarized.By considering the unit and/or system entropy generation as well as the energy and material balances equations, more realistic models can be obtained. Also, rapid development of computer hardware and software will suggest new techniques and programs to be considered. These progress directions are noted.     

NUMERICAL ALGORITHM USING MULTIZONE ADAPTIVE GRID GENERATION FOR MULTIPHASE TRANSPORT PROCESSES WITH MOVING AND FREE BOUNDARIES

Abstract

The primary objective of this study is to develop a numerical scheme far accurate and efficient simulation of phase-change and transport processes of industrial importance. These processes may include a variety of heat transfer and flaw mechanisms in irregularly shaped domains with moving and / or free boundaries. Based on the muttizone adaptive grid generation ( MAGG) technique ( IJ, a curvilinear finite-volume scheme has been developed to discretize the governing equations. The combination of these two techniques provides a powerful tool for numerical modeling of complex transport processes. Several problems are considered to demonstrate the applicability and accuracy of the proposed method. They are ( 1) natural convection in a differentially heated eccentric annuli, ( 2) solidification of a pure material in a rectangular enclosure, ( 3) solidification in an open cavity with shrinkage due to volume change, and ( 4) Czochralski crystal growth of silicon. The predictions show good agreement with experimental data, much better than the previously reported numerical solutions.     

Recombination processes and lifetime measurements in silicon photovoltaics

Recombination lifetime is one of the critical parameters in the search for cost-competitive photovoltaic technologies. Each technology has specific materials issues with respect to the role of recombination lifetime in the potential success of that technology. The dominant commercial technology for low-cost deployment of photovoltaics is currently based on various growth methods of bulk silicon. For low-cost terrestrial applications, the objective is to compromise efficiency while maximizing the efficiency-to-cost ratio. A frequent and cost-efficient tactic is to develop low-cost silicon purification and gettering processes, assessing the effectiveness of the latter by lifetime measurements. The recombination mechanism that affects low-cost silicon photovoltaics is the impurity-related Shockley–Read–Hall (SRH) process, and SRH-impurity removal is of primary concern. Here, I will present some results from a photovoltaic device model that links a theoretical efficiency to a given range of recombination lifetimes. Specialized measurement techniques are needed to get meaningful information about recombination lifetimes for these low-cost materials. Described here is a contactless photoconductive decay measurement system that has proven to be successful for most of these materials. Experimental results on a range of low-cost silicon alternatives will be presented.     

Modeling and improvement of silicon ingot directional solidification for industrial production systems

This paper presents the numerical simulation of heat transfer and solidification process in an industrial silicon directional solidification system. The energy efficiency in the production system is analyzed. The effects of the heating power and the position of the side insulation layer on the solidification interface position/shape are investigated. The numerical results indicate that the directional solidification of the silicon can be controlled by adjusting the heating power and moving the side insulation layer. The knowledge gained from the thermal analysis can be used to improve the energy efficiency in the current silicon production system. An easy method to detect the solidification interface shape was proposed and has been conceptually proven.     

Large area multicrystalline silicon solar cells in high volume production environment—history, status, new processes, technology transfer issues

Cast multicrystalline silicon (mc-Si) solar cell technology, accounted for nearly 41% of all the PV modules manufactured worldwide in 2000. Since 1995 the use of cast mc-Si as a substrate has increased every year and that increase is expected to accelerate in the coming years as the PV market grows further. This impressive growth has been enabled by several factors—wafer suppliers, improvements in casting technology, sawing technology and cell process technology. In this paper the enabling factors will be discussed. The new processes used to enhance the efficiency of the cast multicrystalline silicon solar cells and the criteria for technology transfer will also be discussed.     

A novel route to a polycrystalline silicon thin-film solar cell

An alternative approach is described for the fabrication of a polycrystalline silicon thin-film solar cell on inexpensive substrates. In a first step amorphous silicon is recrystallized in an aluminum-induced crystallization process forming a large-grained polycrystalline silicon layer on glass or metal substrates. In a second step this layer is used as a template for epitaxial growth of the absorber layer (2–3 μm thick) at T<600 °C using ion-assisted deposition techniques. The third step consists of the formation of an a-Si:H/c-Si heterojunction by depositing an a-Si:H emitter from the gas phase. It will be shown that each of these steps has been successfully developed and can now be implemented in a solar cell process.     

柴油机双进气道流动特性的数值模拟及试验研究

在与稳流试验对等的边界条件及评价方法下,利用CFD软件Fire对气道稳流试验进行了数值模拟。计算结果显示出在气道稳流试验条件下气流运动的详细状况。模拟结果与试验结果的对比表明,数值模拟所得流量系数和涡流比与试验结果基本吻合,气道数值模拟结果具有一定的可信度。     

会议室空调气流组织形式的数值模拟研究

办公区里的会议室为重要工作场所,其环境质量的优劣直接影响工作的效率。以计算流体力学和传热学为基础,利用CFD软件对室内混合通风与置换通风两种气流组织进行数值模拟。结果表明:在温度场、速度场、温度效率及人体热舒适性等方面,置换通风均优于混合通风方式。     

Influence of the Window Thermal Diffusivity on the Silicon Wafer Temperature in a Rapid Thermal System

The heating of a silicon wafer in a rapid thermal process is studied by numerical simulation. In the model, the equations of conservation of mass and energy are solved with the finite-volume method and the determination of the solutions of the radiative transfer equation is based on the Monte-Carlo method. The results of numerical simulations, without optimization and in steady state, show a close relationship between the thermal profiles of the silicon wafer and the ones of the quartz window. By introducing a high thermal diffusivity value for the window, the homogeneity of the wafer temperature is improved by 54%. The effect of heat storage by the quartz window on the temperature profile of the silicon substrate is hence well appreciated. Finally, a selection of materials is proposed for the implementation of the high diffusivity infrared window.     

Physical modelling and advanced simulations of gas–liquid two-phase jet flows in atomization and sprays

This review attempts to summarize the physical models and advanced methods used in computational studies of gas–liquid two-phase jet flows encountered in atomization and spray processes. In traditional computational fluid dynamics (CFD) based on Reynolds-averaged Navier–Stokes (RANS) approach, physical modelling of atomization and sprays is an essential part of the two-phase flow computation. In more advanced CFD such as direct numerical simulation (DNS) and large-eddy simulation (LES), physical modelling of atomization and sprays is still inevitable. For multiphase flows, there is no model-free DNS since the interactions between different phases need to be modelled. DNS of multiphase flows based on the one-fluid formalism coupled with interface tracking algorithms seems to be a promising way forward, due to the advantageous lower costs compared with a multi-fluid approach. In LES of gas–liquid two-phase jet flows, subgrid-scale (SGS) models for complex multiphase flows are very immature. There is a lack of well-established SGS models to account for the interactions between the different phases. In this paper, physical modelling of atomization and sprays in the context of CFD is reviewed with modelling assumptions and limitations discussed. In addition, numerical methods used in advanced CFD of atomization and sprays are discussed, including high-order numerical schemes. Other relevant issues of modelling and simulation of atomization and sprays such as nozzle internal flow, dense spray, and multiscale modelling are also briefly reviewed.     

150-mm layer transfer for monocrystalline silicon solar cells

We report on recent improvements concerning the transfer of monocrystalline silicon layers to plastic substrates for flexible solar cell applications. Finite element numerical modeling of the etching current density distribution allows for optimizing our electrochemical etching setup for separation layer formation. By modifying the setup according to the simulation results, we are now able to transfer 25 μm thick monocrystalline silicon sheets with up to 150 mm in diameter.     

Chemical treatment of crystalline silicon solar cells as a method of recovering pure silicon from photovoltaic modules

Photovoltaic technology is used worldwide to provide reliable and cost-effective electricity for industrial, commercial, residential and community applications. The average lifetime of PV modules can be expected to be more than 25 years. The disposal of PV systems will become a problem in view of the continually increasing production of PV modules. These can be recycled for about the same cost as their disposal.Photovoltaic modules in crystalline silicon solar cells are made from the following elements, in order of mass: glass, aluminium frame, EVA copolymer transparent hermetising layer, photovoltaic cells, installation box, Tedlar^® protective foil and assembly bolts. From an economic point of view, taking into account the price and supply level, pure silicon, which can be recycled from PV cells, is the most valuable construction material used.Recovering pure silicon from damaged or end-of-life PV modules can lead to economic and environmental benefits. Because of the high quality requirement for the recovered silicon, chemical processing is the most important stage of the recycling process. The chemical treatment conditions need to be precisely adjusted in order to achieve the required purity level of the recovered silicon. For PV systems based on crystalline silicon, a series of etching processes was carried out as follows: etching of electric connectors, anti-reflective coating and n-p junction. The chemistry of etching solutions was individually adjusted for the different silicon cell types. Efforts were made to formulate a universal composition for the etching solution. The principal task at this point was to optimise the etching temperature, time and alkali concentration in such a way that only as much silicon was removed as necessary.     

Annual available radiation for fixed and tracking collectors

Single crystal silicon solar cells are potential elements of large scale solar energy conversion systems. Current costs of these cells are too high at least in part because current production methods require single crystal wafers obtained by slicing cylindrical single crystal ingots. This paper reviews a U.S. research program aimed at reducing the cost of silicon cells by developing new methods of growing silicon ribbons and sheets from which high efficiency solar cells can be fabricated. The paper also describes novel techniques for lower cost processes for ingot growth and wafer slicing which are included in this research and development program.     

Development of low-cost silicon crystal growth techniques for terrestrial photovoltaic solar energy conversion

Single crystal silicon solar cells are potential elements of large scale solar energy conversion systems. Current costs of these cells are too high at least in part because current production methods require single crystal wafers obtained by slicing cylindrical single crystal ingots. This paper reviews a U.S. research program aimed at reducing the cost of silicon cells by developing new methods of growing silicon ribbons and sheets from which high efficiency solar cells can be fabricated. The paper also describes novel techniques for lower cost processes for ingot growth and wafer slicing which are included in this research and development program.