共查询到19条相似文献,搜索用时 78 毫秒
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采用真空热压工艺,在烧结温度1750℃、烧结压力32MPa、保温时间5min的工艺条件下制备了添加不同量纳米六硼化钙(CaB6)粉末的微米烧结体,研究了纳米粒子含量对CaB6烧结体形貌组织和力学性能的影响.纳米粉末加入量为10wt%纳米/微米复合陶瓷的致密度和力学性能最佳,硬度、弯曲强度和断裂韧性分别为92.6 HRA、331.7MPa和3.06MPa.m1/2,优于微米烧结体和添加镍作为烧结助剂的烧结体.纳米粒子对微米颗粒晶界的填充和在复合烧结体中形成的"内晶型"晶粒结构是提高复合陶瓷致密度和力学性能的主要原因. 相似文献
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SHS纳米/微米块体复相陶瓷微观结构与断裂 总被引:3,自引:0,他引:3
通过在(CrO3 Al)燃烧体系中添加一定量的ZrO2(2Y)粉末,利用SHS冶金技术直接制备出Al2O3-35vol%ZrO2纳米/微米结构块体复相陶瓷,研究该复相陶瓷的微观结构与断裂行为.研究发现:该复相陶瓷基体主要由纳米/微米相晶内型结构共晶体组织构成;Vickers压痕试验显示引发陶瓷裂纹扩展的压痕压制临界载荷为30 kg;ZrO2相所具有的应力诱发相变增韧机制和微裂纹增韧机制均很微弱;裂纹扩展主要受纳米/微米相晶内型结构共晶体控制,使该复相陶瓷在断裂过程中呈现出强烈的裂纹偏转绕过机制. 相似文献
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燃烧化学沉积纳米α- Al2O3薄膜及晶化处理 总被引:1,自引:0,他引:1
提出了沉积纳米陶瓷薄膜的一种新方法-燃烧化学沉积法。该方法省去了真空条件,直接在空气中沉积纳米陶瓷薄膜。其主要特点是将配制好的初始液体雾化,让该液雾穿过高温火焰流体。初始液体在火焰流中发生化学反应,并形成反应火焰流,该反应火焰流体系在火焰流的前方基底上沉积出纳米陶瓷薄膜,然后再通过热处理进行晶化处理,使形成晶态相。本文以制备α-Al2O3纳米薄膜为例,介绍用该方法的制备过程,并用SEM和TEM分析了α-Al2O3纳米薄膜的显微形貌和结构。 相似文献
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采用等离子体增强化学气相沉积法制备了具有纳米结构的碳化钨薄膜, 采用XRD、EDS、SEM方法表征了薄膜的表面形貌、化学组成和物相结构. 这种碳化钨纳米晶薄膜具有巨大的电化学比表面积、很好的电催化活性和电化学稳定性. 通过测试和计算表明, 几何面积为1cm2碳化钨薄膜/泡沫镍电极、碳化钨薄膜/镍电极的电化学比表面积分别为83.21和64.13cm2; 该薄膜电极材料的a值为0.422~0.452V, 接近低超电势材料; 析氢交换电流密度为4.02~4.22×10-4A/cm2; 当超电势为263mV时, 其析氢反应的活化能为45.62~45.77kJ/mol. 相似文献
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以铌金属为原料, 在NH4F和H2O2的体系中, 通过水热方法制备形貌可控的氧化铌纳米棒阵列薄膜. 采用XRD、SEM、TEM等对不同工艺条件下获得的产物微观形貌和组成进行了表征, 考察了水热时间、水热温度和NH4F浓度对最终产物及形貌的影响. 研究表明: 氧化铌在NH4F和H2O2共存下表现出各向异性生长特性. NH4F用量对最终产物及形貌起重要作用, 随着 NH4F浓度的增加, Nb2O5薄膜形貌由多面体状颗粒, 向近圆形纳米棒阵列和无规则的纳米颗粒团聚体演变. 当NH4F的浓度为0.5g, 水热反应温度为150℃反应10h, 氧化铌在铌金属表面定向生长为六边形的纳米棒阵列. 本文还提出了氧化铌纳米棒阵列薄膜的形成机理. 相似文献
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以聚(苯胺-邻氨基苯甲酸)(PAOAA)为基体,采用原位生成法制备的纳米CdS/PAOAA复合薄膜中,纳米CdS粒子大小均匀,粒径分布窄.对其荧光分析表明,纳米CdS/PAOAA复合薄膜的发光由CdS纳米粒子和PAOAA共同作用产生,在430nm和520nm附近出现了两大发光峰;硫化时间为5h的薄膜表现出的CdS的荧光特征峰与硫化3h的相比,有所增强,而PAOAA的荧光特征峰减弱. 相似文献
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Very thin poly-SiC films for micro/nano devices 总被引:1,自引:0,他引:1
We report characterization of nitrogen-doped, very thin, low-stress polycrystalline silicon carbide (poly-SiC) films suitable for fabricating micro/nano devices. The poly-SiC films are deposited on 100 mm-diameter (100) silicon wafers in a large-scale, hot-wall, horizontal LPCVD furnace using SiH2Cl2 and C2H2 as precursors and NH, as doping gas. The deposition temperature and pressure are fixed at 900 degrees C and 4 Torr, respectively. The deposition rate increases substantially in the first 50 minutes, transitioning to a limiting value thereafter. The deposited films exhibit (111)-orientated polycrystalline 3C-SiC texture. HR-TEM indicates a 1 nm to 4 nm amorphous SiC layer at the SiC/silicon interface. The residual stress and the resistivity of the films are found to be thickness dependent in the range of 100 nm to 1 microm. Films with thickness less than 100 nm suffer from voids or pinholes. Films thicker than 100 nm are shown to be suitable for fabricating micro/nano devices. 相似文献
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Metal/semiconductor thin films are a class of unique materials that are widespread technological applications, particularly in the field of microelectronic devices. Assessment strategies of fractal and tures are of fundamental importance in the development of nano/microdevices. This review presents the preparation methodologies and nano/microstructural evaluation of metal/semiconductor thin films including Au/Ge bilayer films and Pd-Ge alloy thin films, which show in the form of fractals and nanocrystals. Firstly, the extended version of Au/Ge thin films for the fractal crystallization of amorphous Ge and the formation of nanocrystals developed with improved micro- and nanostructured features are described in Section 2. Secondly, the nano/microstructural characteristics of Pd/Ge alloy thin films during annealing have been investigated in detail and described in Section 3. Finally, we will draw the conclusions from the present work as shown in Section 4. It is expected that the preparation methodologies developed and the knowledge of nano/microstructural evolution gained in metal/semiconductor thin films, including Au/Ge bilayer films and Pd-Ge alloy thin films, will provide an important fundamental basis underpinning further interdisciplinary research in these fields such as physics, chemistry, materials science, and nanoscience and nanotechnology, leading to promising exciting opportunities for future technological applications involving these thin films. 相似文献
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采用射频反应溅射制备了纳米晶WO3薄膜.基于Berg理论建立了WO3射频反应溅射模型,并分析工艺参数对滞回曲线的影响,基于研究了抽速、基片温度、馈入功率、靶片间距和溅射靶等离子体溅射面积的影响.提出了一种新的消除滞回曲线的制备纳米晶WO3薄膜的方法和优化的工艺参数.论文制备了性能良好的电致变色纳米晶WO3薄膜.分别用环境扫描电镜(ESEM)、X射线光电子能谱(XPS),X射线衍射(XRD)和分光光度计测试了该薄膜,该薄膜在可见光波段,不变色时的透光率大于95%,变色后为65%.纳米晶WO3薄膜的晶粒尺寸在40纳米左右,其高比表面积和缺陷态为电致变色的例子扩散提供了通道. 相似文献
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薄膜厚度和退火温度对纳米多晶硅薄膜特性影响 总被引:1,自引:0,他引:1
以高纯SiH4为气源,采用低压化学气相沉积方法在p型〈100〉晶向单晶硅上620℃制备纳米多晶硅薄膜,对不同薄膜厚度纳米多晶硅薄膜分别在700、800、900℃进行高温真空退火,通过X射线衍射(XRD)、Raman光谱(Raman)、场发射扫描电子显微镜(SEM)和原子力显微镜(AFM)研究薄膜厚度、退火温度对薄膜结晶取向、表面形貌等结构特性影响。结果表明,随薄膜厚度增加,薄膜取向显著且多晶特征明显,沉积薄膜多晶取向为〈111〉、〈220〉和〈311〉晶向,择优取向为〈111〉晶向,TO模强度减弱且加宽,晶粒大小增加;同一薄膜厚度,随真空退火温度升高,X射线衍射峰强度增强,TO模强度增强。 相似文献
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Harish Bahadur S. B. Samanta A. K. Srivastava K. N. Sood R. Kishore R. K. Sharma A. Basu Rashmi M. Kar Prem Pal Vivekanand Bhatt Sudhir Chandra 《Journal of Materials Science》2006,41(22):7562-7570
Zinc oxide thin films grown by sol–gel and RF sputtering methods have been characterized. The characterization techniques used involve ellipsometry, optical absorption, scanning tunneling microscopy, scanning and transmission electron microscopy. The films grown by sol–gel spin method which followed zinc acetate route exhibited a smoother texture than the films, which were deposited by using zinc nitrate route. The later type of films showed a dendritic character. Nano-structured fine grains of size ranging from 20 to 60 nm were observed with zinc nitrate precursor film. Individual grains show a sharp contrast with different facets and boundaries. Crystal planes and lattice parameters calculated by electron diffraction and X-ray diffraction are quite close and in agreement with the reported values in literature. Scanning tunneling microscopy has been used for measuring the average roughness of the surface and estimating the lattice constants. The STM studies of RF sputtered films, although showing a ZnO structure, exhibited a disturbed lattice. This was presumably due to the fact that after deposition the films were not annealed. Nanographs of 2D and 3D view of atomic positions of ZnO have been presented by using scanning tunneling microscopy. 相似文献
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WO3纳米薄膜的制备与气致变色特性研究 总被引:10,自引:1,他引:9
报道了以钨粉为原料,采用溶胶一凝胶技术和旋转镀膜方法,制备出了气致变色WO3纳米薄膜。采用椭偏仪、X射线衍射仪(XRD)、场发射扫描电子显微镜(FE-SEM)、红外光谱仪以及可见光分光光度计等方法分析了薄膜的特性。研究结果表明热处理使得薄膜致密,折射率增大,厚度减小,薄膜结晶;过氧键消失,WO3微结构发生了变化,共角W-O-W键吸收越来越强,且向高波数方向移动。这些变化归因于热处理导致的WO3颗粒形状、团聚状态的变化以及应变键的产生。WO3纳米薄膜具有很好的气致变色特性,致色与退色态透射率变化超过60%,变色起因于H扩散到WO3薄膜中形成的小极化子吸收。 相似文献