Influence of delta-doping on the hole capture probability in Ge/Si quantum dot mid-infrared photodetectors

We study the effect of delta-doping on the hole capture probability in ten-period p-type Ge quantum dot photodetectors. The boron concentration in the delta-doping layers is varied by either passivation of a sample in a hydrogen plasma or by direct doping during the molecular beam epitaxy. The devices with a lower doping density is found to exhibit a lower capture probability and a higher photoconductive gain. The most pronounced change in the trapping characteristics upon doping is observed at a negative bias polarity when the photoexcited holes move toward the δ-doping plane. The latter result implies that the δ-doping layers are directly involved in the processes of hole capture by the quantum dots.     

Photovoltaic Ge/Si quantum dot detectors operating in the mid-wave atmospheric window (3-5 micrometers)

ABSTRACT: Ge/Si quantum dots fabricated by molecular-beam epitaxy at 500C are overgrown with Si at different temperatures Tcap, and effect of boron delta-doping of Si barriers on the mid-infrared photoresponse was investigated. The photocurrent maximum shifts from 2.3 to 3.9 micrometer with increasing Tcap from 300 to 750C. Within the sample set, we examined devices with different positions of the delta-doping layer with respect to the dot plane, different distances between the delta-doping layer and the dot plane d, and different doping densities pB. All detectors show pronounced photovoltaic behavior implying the presence of an internal inversion asymmetry due to the placing dopants in the barriers. The best performance was achieved for the device with Tcap=600C, pB=12x10^{11} cm^{-2}, and d=5 nm in a photovoltaic regime. At a sample temperature of 90K and no applied bias, a responsivity of 0.83 mA/W and detectivity of 8x10^{10} cmHz^{1/2}/W at lambda=3.4 micrometer were measured under normal incidence infrared radiation.     

Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires

We outline a metal-free fabrication route of in-plane Ge nanowires on Ge(001) substrates. By positively exploiting the polishing-induced defects of standard-quality commercial Ge(001) wafers, micrometer-length wires are grown by physical vapor deposition in ultra-high-vacuum environment. The shape of the wires can be tailored by the epitaxial strain induced by subsequent Si deposition, determining a progressive transformation of the wires in SiGe faceted quantum dots. This shape transition is described by finite element simulations of continuous elasticity and gives hints on the equilibrium shape of nanocrystals in the presence of tensile epitaxial strain.

PACS

81.07.Gf; 68.35.bg; 68.35.bj; 62.23.Eg     

Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet-etched pits

We demonstrate the formation of Ge quantum dots in ring-like arrangements around predefined {111}-faceted pits in the Si(001) substrate. We report on the complex morphological evolution of the single quantum dots contributing to the rings by means of atomic force microscopy and demonstrate that by careful adjustment of the epitaxial growth parameters, such rings containing densely squeezed islands can be grown with large spatial distances of up to 5 μm without additional nucleation of randomly distributed quantum dots between the rings.     

In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron Diffraction and Scanning Tunneling Microscopy

Si and Ge growth on the stripe-patterned Si (001) substrates is studied using in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). During Si buffer growth, the evolution of RHEED patterns reveals a rapid change of the stripe morphology from a multifaceted “U” to a single-faceted “V” geometry with {119} sidewall facets. This allows to control the pattern morphology and to stop Si buffer growth once a well-defined stripe geometry is formed. Subsequent Ge growth on “V”-shaped stripes was performed at two different temperatures of 520 and 600°C. At low temperature of 520°C, pronounced sidewall ripples are formed at a critical coverage of 4.1 monolayers as revealed by the appearance of splitted diffraction streaks in RHEED. At 600°C, the ripple onset is shifted toward higher coverages, and at 5.2 monolayers dome islands are formed at the bottom of the stripes. These observations are in excellent agreement with STM images recorded at different Ge coverages. Therefore, RHEED is an efficient tool for in situ control of the growth process on stripe-patterned substrate templates. The comparison of the results obtained at different temperature reveals the importance of kinetics on the island formation process on patterned substrates.     

Evolution of wetting layer in InAs/GaAs quantum dot system

For InAs/GaAs quantum dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS). Two transitions related to the heavy- and light-hole in the WL have been distinguished in RD spectra. Taking into account the strain and segregation effects, a model has been presented to deduce the InAs amount in the WL and the segregation coefficient of the indium atoms from the transition energies of heavy- and light-holes. The variation of the InAs amount in the WL and the segregation coefficient are found to rely closely on the growth modes. In addition, the huge dots also exhibits a strong effect on the evolution of the WL. The observed linear dependence of In segregation coefficient upon the InAs amount in the WL demonstrates that the segregation is enhanced by the strain in the WL.     

Room-temperature efficient light detection by amorphous Ge quantum wells

In this work, ultrathin amorphous Ge films (2 to 30 nm in thickness) embedded in SiO₂ layers were grown by magnetron sputtering and employed as proficient light sensitizer in photodetector devices. A noteworthy modification of the visible photon absorption is evidenced due to quantum confinement effects which cause both a blueshift (from 0.8 to 1.8 eV) in the bandgap and an enhancement (up to three times) in the optical oscillator strength of confined carriers. The reported quantum confinement effects have been exploited to enhance light detection by Ge quantum wells, as demonstrated by photodetectors with an internal quantum efficiency of 70%.     

Fluorescence energy transfer in quantum dot/azo dye complexes in polymer track membranes

Fluorescence resonance energy transfer in complexes of semiconductor CdSe/ZnS quantum dots with molecules of heterocyclic azo dyes, 1-(2-pyridylazo)-2-naphthol and 4-(2-pyridylazo) resorcinol, formed at high quantum dot concentration in the polymer pore track membranes were studied by steady-state and transient PL spectroscopy. The effect of interaction between the complexes and free quantum dots on the efficiency of the fluorescence energy transfer and quantum dot luminescence quenching was found and discussed.     

Silicon quantum dot superlattice solar cell structure including silicon nanocrystals in a photogeneration layer

The solar cell structure of n-type poly-silicon/5-nm-diameter silicon nanocrystals embedded in an amorphous silicon oxycarbide matrix (30 layers)/p-type hydrogenated amorphous silicon/Al electrode was fabricated on a quartz substrate. An open-circuit voltage and a fill factor of 518 mV and 0.51 in the solar cell were obtained, respectively. The absorption edge of the solar cell was 1.49 eV, which corresponds to the optical bandgap of the silicon nanocrystal materials, suggesting that it is possible to fabricate the solar cells with silicon nanocrystal materials, whose bandgaps are wider than that of crystalline silicon.

PACS

85.35.Be; 84.60.Jt; 78.67.Bf     

Fano-Rashba effect in thermoelectricity of a double quantum dot molecular junction

We examine the relation between the phase-coherent processes and spin-dependent thermoelectric effects in an Aharonov-Bohm (AB) interferometer with a Rashba quantum dot (QD) in each of its arm by using the Green''s function formalism and equation of motion (EOM) technique. Due to the interplay between quantum destructive interference and Rashba spin-orbit interaction (RSOI) in each QD, an asymmetrical transmission node splits into two spin-dependent asymmetrical transmission nodes in the transmission spectrum and, as a consequence, results in the enhancement of the spin-dependent thermoelectric effects near the spin-dependent asymmetrical transmission nodes. We also examine the evolution of spin-dependent thermoelectric effects from a symmetrical parallel geometry to a configuration in series. It is found that the spin-dependent thermoelectric effects can be enhanced by controlling the dot-electrode coupling strength. The simple analytical expressions are also derived to support our numerical results.PACS numbers: 73.63.Kv; 71.70.Ej; 72.20.Pa     

Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces

ABSTRACT: We present a comparative analysis of Raman scattering by acoustic and optical phonons in InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces. Doublets of folded longitudinal acoustic phonons up to the fifth order were observed in the Raman spectra of (001)- and (311)B-oriented quantum dot superlattices measured in the polarized scattering geometries. The energy positions of the folded acoustic phonons are well described by the elastic continuum model. Besides the acoustic phonons, the spectra display features related to confined transverse and longitudinal optical as well as interface phonons in quantum dots and spacer layers. Their frequency positions are discussed in terms of phonon confinement, elastic stress, and atomic intermixing.     

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

One of the main directions of contemporary semiconductor physics is the production and study of structures with a dimension less than two: quantum wires and quantum dots, in order to realize novel devices that make use of low-dimensional confinement effects. One of the promising fabrication methods is to use self-organized three-dimensional (3D) structures, such as 3D coherent islands, which are often formed during the initial stage of heteroepitaxial growth in lattice-mismatched systems. This article is intended to convey the flavour of the subject by focussing on the structural, optical and electronic properties and device applications of self-assembled quantum dots and to give an elementary introduction to some of the essential characteristics.     

Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography

This study fabricates the optically active uniform SiGe/Si multiple quantum well (MQW) nanorod and nanodot arrays from the Si_0.4Ge_0.6/Si MQWs using nanosphere lithography (NSL) combined with the reactive ion etching (RIE) process. Compared to the as-grown sample, we observe an obvious blueshift in photoluminescence (PL) spectra for the SiGe/Si MQW nanorod and nanodot arrays, which can be attributed to the transition of PL emission from the upper multiple quantum dot-like SiGe layers to the lower MQWs. A possible mechanism associated with carrier localization is also proposed for the PL enhancement. In addition, the SiGe/Si MQW nanorod arrays are shown to exhibit excellent antireflective characteristics over a wide wavelength range. These results indicate that SiGe/Si MQW nanorod arrays fabricated using NSL combined with RIE would be potentially useful as an optoelectronic material operating in the telecommunication range.     

Effects of annealing on bandgap and surface plasmon resonance enhancement in Au/SnO2 quantum dots

Au/SnO₂ quantum dots (AuSQDs) were synthesized, and the effects of annealing on their structural and optical properties were examined. Significant changes were observed in the bandgap and surface plasmon resonance (SPR) of the AuSQDs after thermal treatment at different temperatures (400, 500, and 600 °C). The properties of the as-prepared and annealed samples were characterized via X-ray diffraction analysis, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy, and diffuse reflectance spectroscopy. Annealing reduced the bandgap from 3.03 to 2.33 eV and increased the crystallinity while maintaining an average crystallite size below 10 nm. XPS valence band (VB) profiles provided information regarding the VB edge potentials, which helped to determine the conduction band edge potentials. An enhancement in the SPR of the Au nanoparticles was observed for AuSQD-500, which had the smallest bandgap among the samples investigated.     

Novel in-situ synthesis of Au/SnO2 quantum dots for enhanced visible-light-driven photocatalytic applications

In recent years, visible-light-driven metal–semiconductor nanocomposites have emerged as a suitable material for the decomposition of various water and air pollutants. In this work, a novel plasmonic Au nanoparticle (NP)/SnO₂ quantum dot (SQD) nanocomposite photocatalysts were prepared via a one-step solvothermal technique. The as-prepared plasmonic photocatalysts were characterized by various techniques, and the results established the formation of Au/SQD nanocomposites. The photocatalytic activity of the as-prepared plasmonic Au/SQD nanocomposites was examined by the degradation of Rhodamine B (RhB) at room temperature under visible light, and the Au/SQD photocatalyst, prepared using 1.0?g of tin chloride, exhibited a higher rate constant of RhB degradation than pristine SQDs. This exceptional improvement in catalytic performance under visible light is ascribed to a shift of the band gap from the ultraviolet to the visible region. The surface plasmon resonance effect of Au NPs and the synergistic coupling of the metal and the semiconductor QDs also played a vital role in enhancing the catalytic performance. The process of the photocatalytic degradation of RhB by the Au/SQD nanocomposites under visible light is described.     

Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots

The effect of Sb spray prior to the capping of a GaAs layer on the structure and properties of InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) is studied by cross-sectional high-resolution transmission electron microscopy (HRTEM). Compared to the typical GaAs-capped InAs/GaAs QDs, Sb-sprayed QDs display a more uniform lens shape with a thickness of about 3 ~ 4 nm rather than the pyramidal shape of the non-Sb-sprayed QDs. Particularly, the dislocations were observed to be passivated in the InAs/GaAs interface region and even be suppressed to a large extent. There are almost no extended dislocations in the immediate vicinity of the QDs. This result is most likely related to the formation of graded GaAsSb immediately adjacent to the InAs QDs that provides strain relief for the dot/capping layer lattice mismatch.

PACS

81.05.Ea; 81.07.-b; 81.07.Ta     

Facile assembly of TiO2 nanospheres/SnO2 quantum dots composites with excellent photocatalyst activity for the degradation of methyl orange

In this report, SnO₂ quantum dots anchored on TiO₂ nanospheres (TiO₂/SnO₂ composites) have been synthesized by a simple one-step hydrothermal process, and then employed as photocatalyst in photodegradation system. The microstructure of TiO₂/SnO₂ composites reveals that the SnO₂ quantum dots are dispersed on the surface of TiO₂ nanospheres uniformly. The photocatalytic behavior of the as-prepared samples revealed that the composites exhibited highly efficient performance by degrading 100 mL of 10 mg/L methylene orange in 15 min completely under ultraviolet-visible light. Owning to the special structure of the composites, TiO₂/SnO₂ shows a more UV–vis light absorption than either pure TiO₂ nanospheres or pure SnO₂ quantum dots. This study offers a facile method to prepare TiO₂/SnO₂ composites, which will be a choice for greatly extending potential applications in water pollution treatment, degradation of pollutants and other related fields.     

Effect of l-cysteine modified ZnS quantum dots on the growth of Aspergillus oryzae

l-cysteine (L-cys) modified ZnS (LZS) quantum dots (QDs) were synthesized by a two-step way. The effects of LZS QDs on the phenotype, biomass, morphology and extracellular protein content of Aspergillus oryzae (A. oryzae) were studied in detail for the first time. The results illustrated that both uncoated and coated QDs had a cubic blend ZnS structure, and the particle size was about 4.0 and 4.3 nm, respectively. It was found that LZS QDs acted as an activator to stimulate the growth of A. oryzae in both solid and liquid media, and the biomass with 50 μg/mL (25 μg/mL) QDs in solid (liquid) medium was the highest and was about 1.65 (3.74) times higher than that in control medium (without QDs). The data of ultraviolet–visible (UV–Vis) revealed that the protein concentration of A. oryzae was 824.904 and 467.748 μg/mL relating to liquid medium with and without QDs, respectively. This work can provide a new way to increase the production of A. oryzae or microorganisms.     

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morphologies that may find use in optoelectronic applications. Increased deposition of InAs on the GaAs ring first produced a QD in the hole followed by QDs around the GaAs ring and on the GaAs (100) surface. This behavior indicates that the QDs prefer to nucleate at locations of high monolayer (ML) step density.     

Coupling effects on photoluminescence of exciton states in asymmetric quantum dot molecules

We present a theoretical study of photoluminescence from exciton states in InAs/GaAs asymmetric dot pairs, where interdot coupling is reached via magnetic field in the Faraday configuration. Electronic structure is obtained by finite element calculations, and Coulomb effects are included using a perturbative approach. According to our simulated spectra, bright excited states may become optically accessible at low temperatures in hybridization regimes where intermixing with the ground state is achieved. Our results show effective magnetic control on the energy, polarization and intensity of emitted light, and suggest these coupled nanostructures as relevant candidates for implementation of quantum optoelectronic devices.