共查询到20条相似文献,搜索用时 15 毫秒
1.
介绍了一种应用于IEEE802.11b/g无线局域网接收机射频前端的设计。基于直接下变频的系统架构。接收机集成了低噪声放大器、I/Q下变频器、去直流偏移滤波器、基带放大器和信道选择滤波器。电路采用TSMC0.18μm CMOS工艺设计,工作在2.4GHz ISM(工业、科学和医疗)频段,实现的低噪声放大器噪声系数为0.84dB,增益为16dB,S11低于-15dB,功耗为13mW;I/Q下变频器电压增益为2dB,输入1dB压缩点为-1 dBm,噪声系数为13dB,功耗低于10mw。整个接收机射频前端仿真得到的噪声系数为3.5dB,IIP3为-8dBm,IP2大于30dBm,电压增益为31dB,功耗为32mW。 相似文献
2.
Stanic N. Balankutty A. Kinget P.R. Tsividis Y. 《Solid-State Circuits, IEEE Journal of》2008,43(5):1138-1145
We report an ultra-low-voltage RF receiver for applications in the 2.4 GHz band, designed in a 90 nm CMOS technology. The sliding-IF receiver prototype includes an LNA, an image-reject LC filter with single-ended to differential conversion, an RF mixer, an LC IF filter, a quadrature IF mixer, RF and IF LO buffers, and an I/Q baseband section with a VGA and a low-pass channel-select filter in each path, all integrated on-chip. It has a programmable overall gain of 30 dB, noise figure of 18 dB, out-of-channel IIP3 of -22 dBm. The 3.4 mm2 chip consumes 8.5 mW from a 0.5 V supply. 相似文献
3.
Baoyong Chi Shuguang Han Zhihua Wang 《Analog Integrated Circuits and Signal Processing》2011,67(2):131-136
A low power direct-conversion receiver RF front-end with high in-band IIP2/IIP3 and low 1/f noise is presented. The front-end
includes the differential low noise amplifier, the down-conversion mixer, the LO buffer, the IF buffer and the bandgap reference.
A modified common source topology is used as the input stages of the down-conversion mixer (and the LNA) to improve IIP2 of
the receiver RF front-end while maintaining high IIP3. A shunt LC network is inserted into the common-source node of the switching
pairs in the down-conversion mixer to absorb the parasitic capacitance and thus improve IIP2 and lower down the 1/f noise
of the down-conversion mixer. The direct-conversion receiver RF front-end has been implemented in 0.18 μm CMOS process. The
measured results show that the 2 GHz receiver RF front-end achieves +33 dBm in-band IIP2, 21 dB power gain, 6.2 dB NF and
−2.3 dBm in-band IIP3 while only drawing 6.7 mA current from a 1.8 V power supply. 相似文献
4.
Hui Zheng Shuzuo Lou Dongtian Lu Cheng Shen Tatfu Chan Luong H.C. 《Solid-State Circuits, IEEE Journal of》2009,44(2):414-426
This paper presents the design and integration of a fully-integrated dual-conversion zero-IF2 CMOS transceiver for 9-band MB-OFDM UWB systems from 3.1 GHz to 8.0 GHz. The transceiver integrates all building blocks including a variable-gain wideband LNA, a single combined mixer for both RF down-conversion in RX and up-conversion in TX, a fast-settling frequency synthesizer, and IQ ADCs and DACs. Fabricated in a standard 0.18- mum CMOS process, the receiver measures maximum S11 of - 13 dB, maximum NF of 8.25 dB, in-band IIP3 of better than -13.7 dBm, and variable gain from 25.3 to 84.0 dB. IQ path gain and phase mismatches of the receiver chain are measured to be 0.8 dB and 4 deg, respectively. The transmitter achieves a minimum output P-1 dB of -8.2 dBm, sideband rejection of better than -42.2 dBc, and LO leakage of smaller than - 46.5 dBc. 相似文献
5.
A down-conversion in-phase/quadrature (I/Q) mixer employing a folded-type topology, integrated with a passive differential quadrature all-pass filter (D-QAF), in order to realize the final down-conversion stage of a 60 GHz receiver architecture is presented in this work. Instead of employing conventional quadrature generation techniques such as a polyphase filter or a frequency divider for the local oscillator (LO) of the mixer, a passive D-QAF structure is employed. Fabricated in a 65 nm CMOS process, the mixer exhibits a voltage gain of 7-8 dB in an intermediate frequency (IF) band ranging from 10 MHz-1.75 GHz. A fixed LO frequency of 12 GHz is used to down-convert a radio frequency (RF) band of 10.25-13.75 GHz. The mixer displays a third order input referred intercept point (IIP3) ranging from -8.75 to -7.37 dBm for a fixed IF frequency of 10 MHz and a minimum single-sideband noise figure (SSB-NF) of 11.3 dB. The mixer draws a current of 6 mA from a 1.2 V supply voltage dissipating a power of 7.2 mW. 相似文献
6.
A 1.2-V RF front-end with on-chip VCO for PCS 1900 direct conversion receiver in 0.13-/spl mu/m CMOS
Sivonen P. Tervaluoto J. Mikkola N. Parssinen A. 《Solid-State Circuits, IEEE Journal of》2006,41(2):384-394
In this paper, a 1.2-V RF front-end realized for the personal communications services (PCS) direct conversion receiver is presented. The RF front-end comprises a low-noise amplifier (LNA), quadrature mixers, and active RC low-pass filters with gain control. Quadrature local oscillator (LO) signals are generated on chip by a double-frequency voltage-controlled oscillator (VCO) and frequency divider. A current-mode interface between the downconversion mixer output and analog baseband input together with a dynamic matching technique simultaneously improves the mixer linearity, allows the reduction of flicker noise due to the mixer switches, and minimizes the noise contribution of the analog baseband. The dynamic matching technique is employed to suppress the flicker noise of the common-mode feedback (CMFB) circuit utilized at the mixer output, which otherwise would dominate the low-frequency noise of the mixer. Various low-voltage circuit techniques are employed to enhance both the mixer second- and third-order linearity, and to lower the flicker noise. The RF front-end is fabricated in a 0.13-/spl mu/m CMOS process utilizing only standard process options. The RF front-end achieves a voltage gain of 50 dB, noise figure of 3.9 dB when integrated from 100 Hz to 135 kHz, IIP3 of -9 dBm, and at least IIP2 of +30dBm without calibration. The 4-GHz VCO meets the PCS 1900 phase noise specifications and has a phase noise of -132dBc/Hz at 3-MHz offset. 相似文献
7.
《Solid-State Circuits, IEEE Journal of》2008,43(12):2706-2715
8.
提出了采用0.18μm CMOS工艺,应用于802.11a协议的无线局域网接受机的低噪声放大器和改进的有源双平衡混频器的一些简单设计概念。通过在5.8 GHz上采用1.8 V供电所得到的仿真结果,低噪声放大器转换电压增益,输入反射系数,输出反射系数以及噪声系数分别为14.8 dB,-20.8 dB,-23.1 dB和1.38 dB。其功率损耗为26.3 mW。设计版图面积为0.9 mm×0.67 mm。混频器的射频频率,本振频率和中频频率分别为5.8 GHz,4.6 GHz和1.2 GHz。在5.8 GHz上,混频器的传输增益,单边带噪声系数(SSB NF),1 dB压缩点,输入3阶截点(IIP3)以及功率损耗分别为-2.4 dB,12.1 dB,3.68 dBm,12.78 dBm和22.3 mW。设计版图面积为1.4 mm×1.1 mm。 相似文献
9.
In this paper,a 0.7-7 GHz wideband RF receiver front-end SoC is designed using the CMOS process.The front-end is composed of two main blocks:a single-ended wideband low noise amplifier (LNA) and an inphase/quadrature (I/Q) voltage-driven passive mixer with IF amplifiers.Based on a self-biased resistive negative feedback topology,the LNA adopts shunt-peaking inductors and a gate inductor to boost the bandwidth.The passive down-conversion mixer includes two parts:passive switches and IF amplifiers.The measurement results show that the front-end works well at different LO frequencies,and this chip is reconfigurable among 0.7 to 7 GHz by tuning the LO frequency.The measured results under 2.5-GHz LO frequency show that the front-end SoC achieves a maximum conversion gain of 26 dB,a minimum noise figure (NF) of 3.2 dB,with an IF bandwidth of greater than 500 MHz.The chip area is 1.67 × 1.08 mm2. 相似文献
10.
In this paper, a fully integrated CMOS receiver frontend for high-speed short range wireless applications centering at 60GHz millimeter wave (mmW) band is designed and implemented in 90nm CMOS technology. The 60GHz receiver is designed based on the super-heterodyne architecture consisting of a low noise amplifier (LNA) with inter-stage peaking technique, a single- balanced RF mixer, an IF amplifier, and a double-balanced I/Q down-conversion IF mixer. The proposed 60GHz receiver frontend derives from the sliding-IF structure and is designed with 7GHz ultra-wide bandwidth around 60GHz, supporting four 2.16GHz receiving channels from IEEE 802.1lad standard for next generation high speed Wi- Fi applications. Measured results show that the entire receiver achieves a peak gain of 12dB and an input 1-dB compression point of -14.SdBm, with a noise figure of lower than 7dB, while consumes a total DC current of only 60mA from a 1.2V voltage supply. 相似文献
11.
Lim K. Lee S.-H. Min S. Ock S. Hwang M.-W. Lee C.-H. Kim K.-L. Han S. 《Solid-State Circuits, IEEE Journal of》2006,41(11):2408-2416
This paper describes a fully integrated zero-IF receiver for cellular CDMA and GPS applications. The single-chip zero-IF receiver integrates the entire signal path for CDMA and GPS bands, including a low-noise amplifier (LNA), I/Q down-converters, baseband channel selection filters (CSFs), a voltage-controlled oscillator (VCO), and a local oscillator (LO) distribution circuit for each band. The cellular-band LNA achieves a noise figure (NF) of 1.2 dB, input third-order intercept point (IIP3) of 11 dBm, and gain of 15.5 dB. Cellular I/Q down-converter and baseband circuitries show 9-dB composite NF, 9 dBm IIP3 and 60-dBm input second-order intercept point (IIP2) without IIP2 calibration. The measured LO leakage is less than -110 dBm at LNA input. The phase noise of the cellular VCO is -134 dBc/Hz at 900-kHz offset with 1.76-GHz carrier frequency. Total GPS signal path achieves NF of 1.7 dB and gain of 74 dB with 42-mA current. The receiver is fabricated in a 0.35-mum SiGe BiCMOS process and packaged in a 6 mm times 6 mm 40-pin micro-lead-frame. Handset measurements report that the receiver meets or exceeds all of the CDMA-2000 requirements 相似文献
12.
Pruvost S. Telliez I. Danneville F. Dambrine G. Rolland N. Pourchon F. 《Microwave and Wireless Components Letters, IEEE》2005,15(8):496-498
This work presents a single-ended active mixer realized with a 0.13 /spl mu/m BiCMOS SiGeC heterojunction bipolar transistor (HBT) technology. This mixer is designed to be integrated in a superheterodyne receiver for 40 GHz wireless communication systems. Local oscillator (LO) and RF signals are directly applied to the base of the HBT through two coupled lines. The mixer provides a down-conversion from 42 GHz to 2 GHz. The mixer exhibits a power conversion gain better than 2.4 dB and a measured double-sideband noise figure less than 8.3 dB for P/sub LO/=3 dBm (power of the local oscillator) under a global power consumption lower than 9.5 mW. This architecture exhibits good linearity performance with a measured IP/sub 1dB/ of about -7 dBm and an IIP3 of +4 dBm. The linear dynamic range for a 2 GHz system bandwidth is approximately 65 dB for P/sub LO/=+2 dBm and T/sub 0/=290 K. The third order spurious free dynamic range is calculated to be better than 52 dB. 相似文献
13.
14.
A 15.1 dB gain, 2.1 dB (min.) noise figure low-noise amplifier (LNA) fabricated in 0.13 mum CMOS operates across the entire 3.1-10.6 GHz ultrawideband (UWB). Noise figure variation over the band is limited to 0.43 dB. Reactive (transformer) feedback reduces the noise figure, stabilizes the gain, and sets the terminal impedances over the desired bandwidth. It also provides a means of separating ESD protection circuitry from the RF input path. Bias current-reuse limits power consumption of the 0.87mm2 IC to 9 mW from a 1.2 V supply. Comparable measured results are presented from both packaged and wafer probed test samples 相似文献
15.
A 2.7-V 900-MHz CMOS LNA and mixer 总被引:4,自引:0,他引:4
A CMOS low-noise amplifier (LNA) and a mixer for RF front-end applications are described. A current reuse technique is described that increases amplifier transconductance for the LNA and mixer without increasing power dissipation, compared to standard topologies. At 900 MHz, the LNA minimum noise figure (NF) is 1.9 dB, input third-order intercept point (IIP3) is -3.2 dBm and forward gain is 15.6 dB. With a 1-GHz local oscillator (LO) and a 900-MHz RF input, the mixer minimum double sideband noise figure (DSB NF) is 5.8 dB, IIP3 is -4.1 dBm, and power conversion gain is 8.8 dB. The LNA and mixer, respectively, consume 20 mW and 7 mW from a 2.7 V power supply. The active areas of the LNA and mixer are 0.7 mm×0.4 mm and 0.7 mm×0.2 mm, respectively. The prototypes were fabricated in a 0.5-μm CMOS process 相似文献
16.
Liscidini A. Mazzanti A. Tonietto R. Vandi L. Andreani P. Castello R. 《Solid-State Circuits, IEEE Journal of》2006,41(12):2832-2841
This paper presents the first quadrature RF receiver front-end where, in a single stage, low-noise amplifier (LNA), mixer and voltage-controlled oscillator (VCO) share the same bias current. The new structure exploits the intrinsic mixing functionality of a classical LC tank oscillator providing a compact and low-power solution compatible with low-voltage technologies. A 0.13-mum CMOS prototype tailored to the GPS application is presented. The experimental results exhibit a noise figure of 4.8 dB, a gain of 36 dB, an IIP3 of -19 dBm with a total power consumption of only 5.4 mW from a voltage supply of 1.2 V 相似文献
17.
A 2.4 GHz low-power,low-noise and highly linear receiver front-end with a low noise amplifier(LNA) and balun optimization is presented.Direct conversion architecture is employed for this front-end.The on-chip balun is designed for single-to-differential conversion between the LNA and the down-conversion mixer,and is optimized for the best noise performance of the front-end.The circuit is implemented with 0.35μm SiGe BiCMOS technology.The front-end has three gain steps for maximization of the input dynamic range.The overall maximum gain is about 36 dB.The double-sideband noise figure is 3.8 dB in high gain mode and the input referred third-order intercept point is 12.5 dBm in low gain mode.The down-conversion mixer has a tunable parallel R-C load at the output and an emitter follower is used as the output stage for testing purposes.The total front-end dissipation is 33 mW under a 2.85 V supply and occupies a 0.66 mm~2 die size. 相似文献
18.
Chun-Lin Kuo Bo-Jr Huang Che-Chung Kuo Kun-You Lin Huei Wang 《Microwave and Wireless Components Letters, IEEE》2008,18(7):455-457
10-35 GHz doubly balanced mixer using a 0.13-mum CMOS foundry process is presented in this letter. Using the bulk-driven topology, the number of transistors of the doubly balanced mixer is reduced; thus the mixer can achieve a low supply voltage and low power consumption. This bulk-driven mixer exhibits a measured conversion gain of -1 plusmn 2 dB from 10 to 35 GHz of radio frequency (RF) with a fixed intermediate frequency (IF) of 100 MHz. The measured local oscillation (LO) to IF and RF-IF isolations are better than 30 dB. The chip area of the mixer is 0.6 times 0.4 mm2. The total power consumption included output buffer is only 6 mW. 相似文献
19.
An active image-rejection filter is presented in this paper, which applies actively coupled passive resonators. The filter has very low noise and high insertion gain, which may eliminate the use of a low-noise amplifier (LNA) in front-end applications. The GaAs monolithic-microwave integrated-circuit (MMIC) chip area is 3.3 mm2 . The filter has 12-dB insertion gain, 45-dB image rejection, 6.2-dB noise figure, and dissipates 4.3 mA from a 3-V supply. An MMIC mixer is also presented. The mixer applies two single-gate MESFETs on a 2.2-mm2 GaAs substrate. The mixer has 2.5-dB conversion gain and better than 8-dB single-sideband (SSB) noise figure with a current dissipation of 3.5 mA applying a single 5-V supply. The mixer exhibits very good local oscillator (LO)/RF and LO/IF isolation of better than 30 and 17 dB, respectively, Finally, the entire front-end, including the LNA, image rejection filter, and mixer functions is realized on a 5.7-mm 2 GaAs substrate. The front-end has a conversion gain of 15 dB and an image rejection of more than 53 dB with 0-dBm LO power. The SSB noise figure is better than 6.4 dB, The total power dissipation of the front-end is 33 mW. The MMIC's are applicable as a single-block LNA and image-rejection filter, mixer, and single-block front-end in digital European cordless telecommunications. With minor modifications, the MMIC's can be applied in other wireless communication systems working around 2 GHz, e.g., GSM-1800 and GSM-1900 相似文献
20.
In this study, we introduce a zero-IF sub-harmonic mixer with high isolation in the 5 GHz band using 0.18 μm CMOS technology.
Placing an LC-Tank between the class AB stage and the mixer core improves the isolation between the LO to RF at low supply
voltage. The measured isolation is 48 dB between the LO and RF ports, and the 9.5 dB conversion gain is achieved with a supply
voltage of 7 mA at 2.5 V. In order to alleviate the degradation of linearity due to the high conversion gain, we adopt the
class AB stage as RF input stage. The measured IIP3 is −7.5 dBm.
This work was supported by National Science Council of Taiwan, ROC under contract no. NSC94-2220-E-005-002. 相似文献