Gas-Sensing Properties of Spinodally Decomposed (Ti,Sn)O2 Thin Films

The gas-sensing properties of spinodally decomposed (Ti,Sn)O₂ thin films on sapphire substrates were investigated for CO, C₃H₈, and C₂H₅OH, and hydrogen gases at a temperature of 500°C. The variation in the d -spacing of the (101) plane of (Ti_0.5Sn_0.5)O₂ films showed behavior that was typical of spinodal decomposition during annealing at a temperature of 900°C. Transmission electron micrographs of the spinodally decomposed (Ti,Sn)O₂ films on sapphire (0112) substrates revealed the characteristic modulated structure. The modulated lamella microstructure consisted of TiO₂- and SnO₂-rich regions at intervals of ∼10 nm. The films were very sensitive to hydrogen gas and revealed anisotropic electrical conduction that was influenced by the modulated microstructure, which is characteristic of spinodal decomposition.     

Low-Loss Microwave Dielectrics Using Mg2(Ti1−xSnx)O4 (x=0.01–0.09) Solid Solution

Low-loss ceramics having the chemical formula Mg₂(Ti_{1− x} Sn _x )O₄ for x ranging from 0.01 to 0.09 have been prepared by the conventional mixed oxide route and their microwave dielectric properties have been investigated. X-ray powder diffraction patterns indicate the corundum-structured solid solutions for the prepared compounds. In addition, lattice parameters, which linearly increase from 8.4414 to 8.4441 Å with the rise of x from 0.01 to 0.09, also confirm the forming of solid solutions. By increasing x from 0.01 to 0.05, the Q × f of the specimen can be tremendously boosted from 173 000 GHz to a maximum 318 000 GHz. A fine combination of microwave dielectric properties (ɛ_r∼15.57, Q × f ∼318 000 GHz at 10.8 GHz, τ_f∼−45.1 ppm/°C) was achieved for Mg₂(Ti_0.95Sn_0.05)O₄ ceramics sintered at 1390°C for 4 h. Ilmenite-structured Mg(Ti_0.95Sn_0.05)O₃ (ɛ_r∼16.67, Q × f ∼275 000 GHz at 10.3 GHz, τ_f∼−53.2 ppm/°C) was detected as a second phase. The presence of the second phase, however, would cause no significant variation in the dielectric properties of the specimen, because the second phase properties are very similar to the primary phase. These unique properties, in particular, low ɛ_r and high Q × f , can be utilized as a very promising dielectric material for ultra-high-frequency applications.     

Phase Relations in the Pseudobinary System Na2TiSi4O11-Na2Ti2Si2O9

The quenching technique was used to study subliquidus and subsolidus phase relations in the pseudobinary system Na₂ Ti₂Si₂ O₁₁-Na₂ Ti₂ Si₂ O₉. Both narsarukite (Na₂TiSi₄O₁₁) and lorenzenite (Na₂Ti₂Si₂O₉) melt incongruently. Narsarsukite melts at 911°±°C to SiO₂+liquid, with the liquidus at 1016°C. Lorenzenite melts at 910°±5°C to Na₂ Ti₆ O₁₃+liquid; Na₂ Ti₆ O₁₃ reacts with liquid to form TiO₂ and is thus consumed by 985°±5°C. The liquidus occurs at 1252°C.     

In-Plane Polarized 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 Thin Films

Ferroelectric 0.7Pb(Mg_1/3Nb_2/3)O₃–0.3PbTiO₃ (PMN-PT) thin films were deposited on ZrO₂/SiO₂/silicon substrates using a chemical-solution-deposition method. Using a thin PZT film as a seed layer for the PMN-PT films, phase-pure perovskite PMN-PT could be obtained via rapid thermal annealing at 750°C for 60 s. The electrical properties of in-plane polarized thin films were characterized using interdigitated electrode arrays on the film surface. Ferroelectric hysteresis loops are observed with much larger remanent polarizations (∼24 μC/cm²) than for through-the-thickness polarized PMN-PT thin films (10–12 μC/cm²) deposited on Pt/Ti/Si substrates. For a finger spacing of 20 μm, the piezoelectric voltage sensitivity of in–plane polarized PMN-PT thin films was ∼20 times higher than that of through-the-thickness polarized PMN-PT thin films.     

Toughening of SiC with Ti3SiC2 Particles

Composites in the SiC–TiC–Ti₃SiC₂ system were synthesized using reactive hot pressing at 1600°C. The results indicate that addition of Ti₃SiC₂ to SiC leads to improved fracture toughness. In addition, high microhardness can be retained if TiC is added to the material. The best combination of properties obtained in this study is K _{I c} =8.3 MPa·m^1/2 and H _v=17.6 GPa. The composition can be tailored in situ using the decomposition of Ti₃SiC₂. Ti₃SiC₂ decomposed rapidly at temperatures above 1800°C, but the decomposition could be conducted in a controlled manner at 1750°C. This can be used for synthesis of fully dense composites with improved properties by first consolidating to full density a softer Ti₃SiC₂-rich initial composition, and then using controlled decomposition of Ti₃SiC₂ to achieve the desired combination of microhardness and fracture toughness.     

Neutron Powder Diffraction Study of a Phase Transition in La0.68(Ti0.95Al0.05)O3

Crystal structures and structural changes of the compound La_0.68(Ti_0.95Al_0.05)O₃ have been studied using neutron powder diffraction data and the Rietveld method in the temperature range from 25° to 592°C. The Rietveld profile-fitting analyses of the neutron data and the synchrotron diffraction profile revealed that the crystal symmetry of the low-temperature phase of La_0.68(Ti_0.95Al_0.05)O₃ is orthorhombic Cmmm (2 a _p× 2 a _p× 2 a _p; p: pseudo-cubic perovskite). The unit-cell and structural parameters were successfully refined with the orthorhombic Cmmm for the intensity data measured at 25°, 182°, and 286°C, and with the tetragonal P 4/ mmm ( a _p× a _p× 2 a _p) for intensity data obtained at 388° and 592°C. The P 4/ mmm -to- Cmmm phase transition was found to be induced by tilting of the (TiAl)O₆ octahedron. The tilt angle decreased with increasing temperature, reaching 0° at the Cmmm – P 4/ mmm transition temperature.     

PbTiO3–PbO–SiO2 Glass-Ceramic Thin Film by a Sol–Gel Process

PbTiO₃(PT)-PbO-SiO₂ glass-ceramic thin films were pro-duced by a sol-gel process. The crystallization of PT oc-curred at ∼700°C and was higher than that in PT-PbO-B₂ O₃ sol-gel glass-ceramics. A pinhole-free thin film was obtained by a rapid thermal annealing process when the designed glass-forming phase content in the thin film was >24 vol%. The measured dielectric constants of the films fairly agreed with the predicted values, based on a parallel mixing model. The dielectric constant was 219 and the di-electric loss was 0.04 in the 0.6PT-0.4(PbO-SiO₂) film that was fired at 700°C.     

Dielectric Properties of Pb0.97La0.02(Zr0.87−xSnxTi0.13)O3 Thin Films with Compositions near the Morphotropic Phase Boundary

Pb_0.97La_0.02(Zr_{0.87− x} Sn _x Ti_0.13)O₃ (PLZST, x =0.27, 0.17, 0.07)) thin films with the compositions in ferroelectric rhombohedral (FE_R) region, near the morphotropic phase boundary (MPB), were deposited on the Pt-electroded silicon (PtSi) substrates by the sol–gel process. The phase structure and surface morphology of PLZST thin films were analyzed by XRD and SEM, respectively. The dc electric field and temperature-dependent dielectric properties of the PLZST thin films were investigated in detail. The results indicated that the dielectric constant, remnant polarization, and the Curie temperature ( T _c) of PLZST films were elevated with the decrease of Sn content. Hence, the larger dielectric tunability (τ) was obtained for PLZST thin films with x =0.07, and the maximum τ value was 78.1%.     

Formation of High-Quality, Epitaxial La2Zr2O7 Layers on Biaxially Textured Substrates by Slot-Die Coating of Chemical Solution Precursors

Crystallization studies were performed of epitaxial La₂Zr₂O₇ (LZO) films on biaxially textured Ni–3at.%W substrates having thin Y₂O₃ (10 nm) seed layers. LZO films were deposited under controlled humid atmosphere using reel-to-reel slot-die coating of chemical solution precursors. Controlled crystallization under various processing conditions has revealed a broad phase space for obtaining high-quality, epitaxial LZO films without microcracks, with no degradation of crystallographic texture and with high surface crystallinity. Crack-free and strong c -axis aligned LZO films with no random orientation were obtained even at relatively low annealing temperatures of 850°–950°C in flowing one atmosphere gas mixtures of Ar–4% H₂ with an effective oxygen partial pressure of P(O₂)∼10⁻²² atm. Texture and reflection high-energy electron diffraction analyses reveal that low-temperature-annealed samples have strong cube-on-cube epitaxy and high surface crystallinity, comparable to those of LZO film annealed at high temperature of 1100°C. In addition, these samples have a smoother surface morphology than films annealed at higher temperatures. Ni diffusion rate into the LZO buffer film is also expected to be significantly reduced at the lower annealing temperatures.     

Fabrication and Properties of Sol–Gel-Derived BiScO3–PbTiO3 Thin Films

BiScO₃–PbTiO₃ (BSPT) thin films near the morphotropic phase boundary were successfully fabricated on Pt(111)/Ti/SiO₂/Si substrates via an aqueous sol–gel method. The thin films exhibited good crystalline quality and dense, uniform microstructures with an average grain size of 50 nm. The dielectric, ferroelectric, and piezoelectric properties of the sol–gel-derived BSPT thin films were investigated. A remanent polarization of 74 μC/cm² and a coercive field of 177 kV/cm were obtained. The local effective piezoelectric coefficient d ^*₃₃ was 23 pC/N at 2 V, measured by a scanning probe microscopy system. The dielectric peak appeared at 435°C, which was 80°C higher than that of Pb(Ti, Zr)O₃ thin films.     

Oxygen Position, Octahedral Distortion, and Bond-Valence Parameter from Bond Lengths in Ti1−xSnxO2 (0 ≤x≤ 1)

Based on the virtual crystal approximation (or Vegard's law), the bond lengths of Ti_{1− x} Sn _x O₂ were deduced from those of TiO₂ and SnO₂, to allow the oxygen position and octahedral distortion to be determined as a function of x . The oxygen positional parameter ( u ) increased linearly when the Sn⁴⁺ cation (which has a larger ionic radius) was substituted for the Ti⁴⁺ cation, whereas the octahedral distortion exhibited a nonlinear decay with increasing x in Ti_{1− x} Sn _x O₂. At the same time, the bond-valence parameter, which relates bond valence to bond length, so that the central atom in the octahedron can retain a constant valence of +4.0, exhibited a correlation with u for Ti_{1− x} Sn _x O₂. The present results indicate that the different phonon/physical properties of TiO₂ and SnO₂ and/or their dependence on x in Ti_{1− x} Sn _x O₂ can be associated with different octahedral distortions.     

Preparation of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 Thin Films Via a Polyvinylpyrrolidone-Assisted Aqueous Sol–Gel Process and Dielectric Properties

Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ (PMN–PT) thin films were prepared by spin coating using aqueous solutions of metal salts containing polyvinylpyrrolidone, where niobium oxide layers and lead—magnesium–titanium oxide layers were laminated on Pt(111)/TiO _x /SiO₂/Si(100) substrates and fired at 750° or 800°C. 250 ± 20 nm thick 0.7PMN–0.3PT thin films of a single-phase perovskite could be prepared, and the film fired at 750°C had dielectric constants and dielectric loss of 1900 ± 350 and 0.13 ± 0.03, respectively, exhibiting polarization-electric field hysteresis with a remanent polarization of 5.1 μC/cm² and a coercive field of 21 kV/cm.     

Characterization of Photoluminescent (Y1–xEux)2O3 Thin Films Prepared by Metallorganic Chemical Vapor Deposition

The purpose of this study was to identify and correlate the microstructural and luminescence properties of europium-doped Y₂O₃ (Y_{1– x} Eu _x )₂O₃ thin films deposited by metallorganic chemical vapor deposition (MOCVD), as a function of deposition time and temperature. The influence of deposition parameters on the crystallite size and microstructural morphology were examined, as well as the influence of these parameters on the photoluminescence emission spectra. (Y_{1– x} Eu _x )₂O₃ thin films were deposited onto (111) silicon and (001) sapphire substrates by MOCVD. The films were grown by reacting yttrium and europium tris(2,2,6,6-tetramethyl–3,5-heptanedionate) precursors with an oxygen atmosphere at low pressures (5 torr (1.7 × 10³ Pa)) and low substrate temperatures (500°–700°C). The films deposited at 500°C were smooth and composed of nanocrystalline regions of cubic Y₂O₃, grown in a textured [100] or [110] orientation to the substrate surface. Films deposited at 600°C developed, with increasing deposition time, from a flat, nanocrystalline morphology into a platelike growth morphology with [111] orientation. Monoclinic (Y_{1– x} Eu _x )₂O₃ was observed in the photoluminescence emission spectra for all deposition temperatures. The increase in photoluminescence emission intensity with increasing postdeposition annealing temperature was attributed to the surface/grain boundary area-reduction effect.     

Use of Transmission Electron Microscopy for the Characterization of Rapid Thermally Annealed, Solution-Gel, Lead Zirconate Titanate Films

The microstructure and preferred orientations of rapid thermally annealed Pb(Zr_0.53,Ti_0.47)O₃ films, deposited on Pt/Ti/SiO₂/Si electrode/substrates by solution-gel spinning, have been investigated using analytical and high-resolution electron microscopy and X-ray diffraction. The temperature of pyrolysis of the PZT films was found to influence the preferred orientation of the film: lower temperatures (350°C) favored a (111) orientation, whereas higher temperatures (420°C) favored a (100) orientation. Excess Pb was used to control the A-site stoichiometry of the film particularly at the film surface where Pb-deficient crystals could often be observed. The absence of these crystals was shown to be correlated with an improvement in the dielectric response.     

Preparation and Phase Separation Behavior of (Co,Fe)3O4 Films

(Co,Fe)₃O₄ films were synthesized by the sol–gel method through metalorganic compounds. The (Co,Fe)₃O₄ films (Co:Fe = 2:1) showed the characteristic behavior of the spinodal decomposition by heat treatments within the miscibility gap. The coercive force of the spinodally decomposed films increased from 0.9 kOe for a solid solution to 2.0 kOe for films that underwent the spinodal decomposition. The nonmagnetic phase (rich in Co) formed by the spinodal decomposition contributes to the pinning of the movement of magnetic domain walls. On the other hand, the (Co,Fe)₃O₄ films (Co:Fe = 1:1) showed the typical feature of binodal decomposition during heat treatment within the miscibility gap. The binodally decomposed films showed a slight increase in the coercive force depending upon the evolution of the magnetic region.     

Sol-Gel Preparation of Pb(Zr0.50Ti0.50)O3 Ferroelectric Thin Films Using Zirconium Oxynitrate as the Zirconium Source

Lead zirconium titanate (Pb(Zr_0.5Ti_0.5)O₃, PZT) ferroelectric thin films were successfully deposited on platinum-coated silicon substrates and platinum-coated silicon substrates with a PbTiO₃ interlayer by using a modified sol–gel spin-coating process, using zirconium oxynitrate dihydrate as the zirconium source. The precursor solution for spin coating was prepared from lead acetate trihydrate, zirconium oxynitrate dihydrate, and tetrabutyl titanate. The use of zirconium oxynitrate instead of the widely used zirconium alkoxide provided more stability to the PZT precursor solution and a well-crystallized structure of PZT film at a relatively low processing temperature. PZT films that were annealed at a temperature of 700°C for 2 min via a rapid thermal annealing process formed a well-crystallized perovskite phase of PZT films and also had nanoscale uniformity. The microstructure and morphology of the prepared PZT thin films were investigated via X-ray diffractometry, transmission electron microscopy, and atomic force microscopy techniques. The values for the remnant polarization ( P ) and coercive electric field ( E ) of the PZT films that were obtained from the P–E loop measurements were 3.67 μC/cm² and 54.5 kV/cm, respectively.     

The Optical Properties and Band Gap Energy of Nanocrystalline La0.4Sr0.6TiO3 Thin Films

The effects of microstructure on the optical properties of La_0.4Sr_0.6TiO₃ thin films were investigated. Dense films with the thickness of ∼200 nm and grain size 14–30 nm were produced on monocrystalline sapphire substrates by using a polymeric precursor spin coating technique at annealing temperatures under 800°C. X-ray data showed the formation of a single-phase cubic perovskite-type structure similar to undoped SrTiO₃ for annealing temperatures >500°C. The results of optical measurements showed that the optical spectra varied with the change of the grain size. From these data, the absorption coefficients were calculated and the band gap energy determined. In agreement with the quantum confinement model, it was shown that the band gap energy increased as the grain size decreased.     

Spin Coating of a Ca(Ti,Fe)O3 Dense Film on a Porous Substrate for Electrochemical Permeation of Oxygen

A dense Ca(Ti_0.75Fe_0.25)O_3−α (Ca(Ti,Fe)O₃) film, which is a mixed conductor of oxide ions and electrons/holes, was prepared on a porous CaTiO₃ substrate by a spin-coating method. The calcined Ca(Ti,Fe)O₃ powder with 2–3 μm grain sizes was mixed with a dispersant in ethanol to form the slurry for spin coating. A uniform Ca(Ti,Fe)O₃ green film was obtained at 1000–1500 rpm on the rotating porous CaTiO₃ substrate, which had an average pore diameter of a few micrometers. The optimum sintering conditions for the spin-coated films were a soaking temperature of 1235°C and a holding time of 2 h, in air. A dense, sintered Ca(Ti,Fe)O₃ film }20–50 μm thick was prepared by repeating the coatingsintering process. The gas-tight film prepared on the porous substrate exhibited higher electrochemical permeation of oxygen at an operating temperature of 1000°C compared with that of thicker, sintered Ca(Ti,Fe)O₃ disks.     

Synthesis of Nanosized Titanium-Chromium Oxynitride Powders by Ammonolysis of Coprecipitated TiO2/Cr2O3 Precursors

Interstitial titanium-chromium oxynitrides in the solid solution series Ti_{1− z} Cr _z (O _x N _y ) ( z = 0.2, 0.4, 0.5, 0.6, 0.8) have been obtained by ammonolysis of the TiO₂/Cr₂O₃ precursors resulting from the coprecipitation method. The precursors and the resulting oxynitrides were characterized by auger electron spectroscopy, X-ray diffraction analysis, electron probe microanalysis, transmission electron microscopy, and BET surface area techniques. Compounds in the Ti_{1− z} Cr _z (O _x N _y ) series are prepared as single phases by nitridation at 1073 K for 8 h. The as-synthesized oxynitride powders contain only Ti_{1− z} Cr _z (O _x N _y ) with cubic structure and the particle size is in the nanometer scale.     

Structure and Microwave Dielectric Properties of Hexagonal Ba[Ti1−x(Ni1/2W1/2)x]O3 Ceramics

Microwave dielectric ceramics with the composition of Ba[Ti_{1− x} (Ni_1/2W_1/2) _x ]O₃ ( x =0.4–0.6) were prepared by a solid-state reaction method. The evolution of the crystalline phases was investigated by X-ray powder diffraction analysis. A cubic-to-hexagonal phase transition occurred between 1000° and 1300°C. The phase transition is irreversible; thus, the hexagonal phase remains stable at room temperature. The X-ray powder diffraction data for x =0.5 were refined using the Rietveld method. It was identified as a h -BaTiO₃-type hexagonal perovksite with the space group of P 6₃/ mmc . It also reveals that random occupancy of Ti⁴⁺ and W⁶⁺ ions occurs in the B-site substructures, whereas Ni²⁺ ions exclusively occupy the octahedral site in the corner-sharing octahedron. The dielectric properties of dense-sintered ceramics were characterized at microwave frequencies. With an increase in x from 0.4 to 0.6, the Q × f value increased from 26 700 to 42 000 GHz, whereas ɛ_r decreased from 29.8 to 20.0, and τ_f from +6.5 to −9.9 ppm/°C.