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1.
The fracture toughness of fine-grained undoped ZrO2-toughened Al2O3 (ZTA) was essentially unchanged by postsintering hot isostatic pressing and increased monotonically with ZrO2 additions up to 25 wt%. The strength of ZTA with 5 to 15 wt% tetragonal ZrO2, which depended monotonically on the amount of ZrO2 present before hot isostatic pressing, was increased by pressing but became almost constant between 5 and 15 wt% ZrO2 addition. The strength appeared to be controlled by pores before pressing and by surface flaws after pressing; the size of flaws after pressing increased with ZrO2 content. The strength of ZTA containing mostly monoclinic ZrO2 (20 to 25 wt%) remained almost constant despite the noticeable density increase upon hot isostatic pressing because the strength was controlled by preexisting microcracks whose extent did not change on postsintering pressing. These strength-toughness relations in sintered and isostatically hot-pressed ZTA are explained on the basis of R -curve behavior. The importance of the contribution of microcracks to the toughness of ZTA is emphasized.  相似文献   

2.
The mechanical behavior of MoSi2 reinforced–Si3N4 matrix composites was investigated as a function of MoSi2 phase content, MoSi2 phase size, and amount of MgO densification aid for the Si3N4 phase. Coarse-phase MoSi2-Si3N4 composites exhibited higher room-temperature fracture toughness than fine-phase composites, reaching values >8 MP·am1/2. Composite fracture toughness levels increased at elevated temperature. Fine-phase composites were stronger and more creep resistant than coarse phase composites. Room-temperature strengths >1000 MPa and impression creep rates of ∼10−8 s−1 at 1200°C were observed. Increased MgO levels generally were deleterious to MoSi2-Si3N4 mechanical properties. Internal stresses due to MoSi2 and Si3N4 thermal expansion coefficient mismatch appeared to contribute to fracture toughening in MoSi2-Si3N4 composites.  相似文献   

3.
Composite ceramic materials based on Si3N4 and ZrO2 stabilized by 3 mol% Y2O3 have been formed using aluminum isopropoxide as a precursor for the Al2O3 sintering aid. Densification was carred out by hot-pressing at temperatures in the range 1650° to 1800°C, and the resulting micro-structures were related to mechanical properties as well as to oxidation behavior at 1200°C. Densification at the higher temperatures resulted in a fibrous morphology of the Si3N4 matrix with consequent high room-temperature toughness and strength. Decomposition of the ZrO2 grains below the oxidized surface during oxidation introduced radial stresses in the subscalar region, and from the oxidation experiments it is suggested that the ZrO2 incorporated some N during densification.  相似文献   

4.
α/β-Si3N4 composites with various α/β phase ratios were prepared by hot pressing at 1600°–1650°C with MgSiN2 as sintering additives. An excellent combination of mechanical properties (Vickers indentation hardness of 23.1 GPa, fracture strength of about 1000MPa, and toughness of 6.3 MPa·m1/2) could be obtained. Compared with conventional Si3N4-based ceramics, this new material has obvious advantages. It is as hard as typical in-situ-reinforced α-Sialon, but much stronger than the latter (700 MPa). It has comparable fracture strength and toughness, but is much harder than β-Si3N4 ceramics (16 GPa). The microstructures and mechanical properties can be tailored by choosing the additive and controlling the heating schedule.  相似文献   

5.
To enhance the sinter ability of Si3N4, powders mixed with 0, 2, and 5 wt% Y2O3 were explosively shock-treated. Compacts of these powders were encapsulated in 96% silica glass containers and isostatically hot-pressed. The shocked Si3N4 with 5 wt% Y2O3 was pressed to a density of 3.09 g/cm3 (95.4% of theoretical) at 1400°C under 430 MPa for 3 h, whereas the unshocked material attained only 82.4% of theoretical density under the same hot isostatic pressing conditions.  相似文献   

6.
A dense and isotropic Si3N4 composite body containing 25 vol% of α-SiC platelets, with average particle size of 24μm and aspect ratio of 8 to 10, was fabricated by hot isostatic pressing without any addition of sintering aids. In this composite, desirable properties for structural ceramics to be used in long-term high-temperature applications are conveniently combined: a fracture resistance comparable with that of Si3N4 sintered with conspicuous amounts of additives, as well as a superior time-dependent strength and deformation behavior up to 1400°C, was found. The high-temperature reliability in the present composite was improved further than that of the additive-free Si3N4, mainly due to mechanisms operating in the wake of the crack. The key to the attainment of a valid synergism between nitride and carbide phase resides both in the presence of pure SiO2 glassy phase at the grain boundary and in the morphology of the reinforcement.  相似文献   

7.
The in situ β-Si3N4/α'-SiAlON composite was studied along the Si3N4–Y2O3: 9 AlN composition line. This two phase composite was fully densified at 1780°C by hot pressing Densification curves and phase developments of the β-Si3N4/α'-SiAlON composite were found to vary with composition. Because of the cooperative formation of α'-Si AlON and β-Si3N4 during its phase development, this composite had equiaxed α'-SiAlON (∼0.2 μm) and elongated β-Si3N4 fine grains. The optimum mechanical properties of this two-phase composite were in the sample with 30–40%α', which had a flexural strength of 1100 MPa at 25°C 800 MPa at 1400°C in air, and a fracture toughness 6 Mpa·m1/2. α'-SiAlON grains were equiaxed under a sintering condition at 1780°C or lower temperatures. Morphologies of the α°-SiAlON grains were affected by the sintering conditions.  相似文献   

8.
Silicon oxynitride ceramics were reaction sintered and fully densified by hot isostatic pressing in the temperature range 1700°C to 1950°C from an equimolar mixture of silicon nitride and silica powders without additives. Conversion to Si2N2O increases steeply from a level around 5% of the crystalline phases at 1700°C to 80% at 1800°C, and increases a few percent further at higher temperatures. α -Si3N4 is the major residual crystalline phase below 1900°C. The hardness level for materials containing 85% Si2N2O is approximately 19 GPa, comparable with the hardness of Si3N4 hot isostatically pressed with 2.5 wt% Y2O3, while the fracture toughness level is around 3.1 MPa. m1/2, being approximately 0.8 MPa.m1/2 lower. The three-point bending strength increased with HIP temperature from approximately 300 to 500 MPa.  相似文献   

9.
Subsolidus phase relations were established in the system Si3N4-SiO2-Y2O3. Four ternary compounds were confirmed, with compositions of Y4Si2O7N2, Y2Si3O3N4, YSiO2N, and Y10(SiO4)6N2. The eutectic in the triangle Si3N4-Y2Si2O7-Y10(SiO4)6N2 melts at 1500°C and that in the triangle Si2N2O-SiO2-Y2Si2O7 at 1550°C. The eutectic temperature of the Si3N4-Y2Si2O7 join was ∼ 1520°C.  相似文献   

10.
R -curve behavior of Si3N4–BN composites and monolithic Si3N4 for comparison was investigated. Si3N4–BN composites showed a slowly rising R -curve behavior in contrast with a steep R -curve of monolithic Si3N4. BN platelets in the composites seem to decrease the crack bridging effects of rod-shaped Si3N4 grains for small cracks, but enhanced the toughness for long cracks as they increased the crack bridging scale. Therefore, fracture toughness of the composites was relatively low for the small cracks, but it increased significantly to ∼8 MPa·m1/2 when the crack grew longer than 700 μm, becoming even higher than that of the monolithic Si3N4.  相似文献   

11.
Fine sialon powders (Si6-zAlzOzN8-z, Z = 0.3, 0.6) were prepared by nitriding combustion. Silicon powders was reacted with AlN and Si3N4 under 10 MPa of nitrogen gas. The reaction temperature reached above 2000°C and single-phase sialon powders were synthesized within minutes. The obtained powders were fully densified without additives by hot isostatic pressing. The sintered body had a flexural strength of 600 MPa by 4-point bending.  相似文献   

12.
The fracture behavior at high temperature of a Si3N4-based SiC-whisker composite fabricated by hot isostatic pressing without sintering aids is compared with that of other highly refractory materials. Particular attention is directed toward evaluating the slow-crack-growth resistance of the composite up to 1440°C and relating this resistance to the microfracture behavior of Si3N4 grains, SiC whiskers, and the intergranular, glassy SiO2 phase. Only thick whiskers operate to bridge the wake of the crack; these whiskers may make a positive contribution to the slow-crack-growth resistance. Impurities detected by EDX microanalysis at the grain boundary, however, apparently degrade the high-temperature properties, a finding supported by internal-friction measurements. Nevertheless, the high potential of the system without sintering aids for high-temperature structural applications has been demonstrated by the time to failure estimated from the measured slow-crack-growth resistance for a fixed flaw size.  相似文献   

13.
CrN powder consisting of granular particles of ∼3 μm has been prepared by self-propagating high-temperature synthesis under a nitrogen pressure of 12 MPa using Cr metal. Dense pure CrN ceramics and CrN/ZrO2(2Y) composites in the CrN-rich region have been fabricated by hot isostatic pressing for 2 h at 1300°C and 196 MPa. The former ceramics have a fracture toughness ( K IC) of 3.3 MPa ·m1/2 and a bending strength (σb) of 400 MPa. In the latter materials almost all of the ZrO2(2Y) grains (0.36–0.41 μm) are located in the grain boundaries of CrN (∼4.6 μm). The values of K IC (6.1 MPa · m1/2) and σb (1070 MPa) are obtained in the composites containing 50 vol% ZrO2(2Y).  相似文献   

14.
The crystal structure and surface morphology of Si3N4 prepared by LPCVD were characterized as a function of processing conditions. Temperature was the most dominant variable which affected the coating microstructure. Strongly faceted crystalline Si3N4 was deposited at temperatures above ∼ 1410°C. In the temperature range of 1300° to 1410°C, crystalline and amorphous phases were codeposited. The content of the crystalline phase rapidly decreased with decreased temperature. In this temperature range, the coating crystallinity was also influenced by kinetic factors such as deposition rate and reagent depletion. For example, Si3N4 became more crystalline as the deposition rate was decreased by either decreasing the flow rate or increasing the NH3/SiF4 molar ratio. At ∼ 1300°C, the coating surface appeared fully botryoidal, and the coatings were mostly amorphous. Changes in the orientation and size of Si3N4 crystallites were parametrically documented. As the temperature was increased, the Si3N4 grains generally became more preferentially oriented to the (102) and/or ( l 0 l ) where l = 1,2,3,., directions. The average facet size increased with coating thickness.  相似文献   

15.
Polycrystalline Si3N4 samples with different grain-size distributions and a nearly constant volume content of grain-boundary phase (6.3 vol%) were fabricated by hot-pressing at 1800°C and subsequent HIP sintering at 2400°C. The HIP treatment of hot-pressed Si3N4 resulted in the formation of a large amount of ß-Si3N4 grains ∼10 µm in diameter and ∼50 µm long, and the elimination of smaller matrix grains. The room-temperature thermal conductivities of the HIPed Si3N4 materials were 80 and 102 Wm−1K−1, respectively, in the directions parallel and perpendicular to the hot-pressing axis. These values are slightly higher than those obtained for hot-pressed samples (78 and 93 Wm−1K−1). The calculated phonon mean free path of sintered Si3N4 was ∼20 nm at room temperature, which is very small as compared to the grain size. Experimental observations and theoretical calculations showed that the thermal conductivity of Si3N4 at room temperature is independent of grain size, but is controlled by the internal defect structure of the grains such as point defects and dislocations.  相似文献   

16.
The high-temperature flexural strength of hot-pressed silicon nitride (Si3N4) and Si3N4-whisker-reinforced Si3N4-matrix composites has been measured at a crosshead speed of 1.27 mm/min and temperatures up to 1400°C in a nitrogen atmosphere. Load–displacement curves for whisker-reinforced composites showed nonelastic fracture behavior at 1400°C. In contrast, such behavior was not observed for monolithic Si3N4. Microstructures of both materials have been examined by scanning and transmission electron microscopy. The results indicate that grain-boundary sliding could be responsible for strength degradation in both monolithic Si3N4 and its whisker composites. The origin of the nonelastic failure behavior of Si3N4-whisker composite at 1400°C was not positively identified but several possibilities are discussed.  相似文献   

17.
Composites containing 30 vol%β-Si3N4 whiskers in a Si3N4 matrix were fabricated by hot-pressing. The composites exhibited fracture toughness values between 7.6 and 8.6 MPa · m1/2, compared to 4.0 MPa · m1/2 for unreinforced polycrystalline Si3N4. The improvements in fracture toughness were attributed to crack wake effects, i.e., whisker bridging and pullout mechanisms.  相似文献   

18.
Continuously graded MoSi2-ZrO2(2Y) materials with high density (97.5% of theoretical) have been fabricated by uniaxial wet-molding, followed by hot pressing (1000°C/1 h/30 MPa) and hot isostatic pressing (1400°C/2 h/196 MPa). Their composition profiles are greatly influenced by the viscosity of mixed solutions of glycerin and ethanol used as a dispersion medium; a linear compositional gradient from MoSi2/ZrO2(2Y) 70/30 to 20/80 mol% is obtained from the solution (50/50 vol%) with a viscosity of 20 mPa s. Vickers hardness (Hv) and fracture toughness (KIC) increase from 9.7 to 12.4 GPa and from 5.1 to 12.5 MPa m1/2, respectively, with increasing ZrO2(2Y) composition.  相似文献   

19.
Impurity phases in commercial hot-pressed Si3N4 were investigated using transmission electron microscopy. In addition to the dominant, β-Si3N4 phase, small amounts of Si2N2O, SiC, and WC were found. Significantly, a continuous grain-boundary phase was observed in the ∼ 25 high-angle boundaries examined. This film is ∼ 10 Å thick between, β-Si3N4 grains and ∼ 30 Å thick between Si2N2O and β-Si3N4 grains.  相似文献   

20.
The effects of oxidation at 1400°C for 100 h on both surface and internal composition of commercial and laboratory hot-pressed Si3N4 with MgO or ZrO2 additives as well as chemically vapor deposited (CVD) Si3N4 were studied using X-ray diffraction. Samples were also compared to the same temperature treatments in Ar. The results indicate the grain boundaries act as rapid diffusion paths for the transport of oxygen.  相似文献   

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