Synthesis and phase evolution of Si-C-Ti powder derived from poly(methylsilaacetylene) and Ti

Si-C-Ti powder was synthesized by reactive pyrolysis of poly(methylsilaacetylene)(PSCC) precursor mixed with metal Ti powder. Pyrolysis of PSCC/Ti mixture with certain atomic ratio was carried out in argon atmosphere between 1300 °C and 1500 °C. The metal-precursor reactions, and phase evolution were studied using X-ray diffraction and scanning electron microscopy equipped with EDX. Ti₃SiC₂ phase was obtained from reaction of PSCC and Ti for the first time. Ti₃SiC₂ formation started at 1300 °C and its amount increased significantly at 1400 °C. In addition, liquid formed by additive CaF₂ could promote the formation of Ti₃SiC₂ phase.     

Synthesis of Ti3Si0.8Al0.4C1.8 solid solution from Ti-Si-Al-C powder mixture

In this study, free Ti/Si/Al/C powder mixtures with molar ratios of 3:0.8:0.4:1.8 were heated in argon with various schedules, in order to reveal the possibility for the synthesis of high Ti₃Si_0.8Al_0.4C_1.8 content powder. X-ray diffraction (XRD) was used for the evaluation of phase identities of the powder after different treatments. Scanning electron microscopy (SEM) was used to observe the morphology of the Ti₃Si_0.8Al_0.4C_1.8 solid solution. XRD results showed that predominantly single phase samples of Ti₃Si_0.8Al_0.4C_1.8 were prepared after heating at 1450 °C for 5 min in argon and the lattice parameters of Ti₃Si_0.8Al_0.4C_1.8 lay between those of Ti₃SiC₂ and Ti₃AlC₂. SEM observation showed that the grains of Ti₃Si_0.8Al_0.4C_1.8 solid solution exhibited a lamellar shape, which is a characteristic feature of Ti₃SiC₂ and Ti₃AlC₂.     

Synthesis and phases evolution of Si–C–Ti from polycarbosilane (PCS) and metal Ti

Si–C–Ti ceramics were synthesized by reactive pyrolysis of polycarbosilane (PCS) precursor filled with metal Ti powder. Pyrolysis of mixture with atomic ratio of Ti:Si through 3:1–3:2 was carried out in argon atmosphere at given temperature up to 1500 °C. The metal–precursor reactions, and phase evolution were studied using X-ray diffraction and scanning electron microscopy with EDX. The Ti₃SiC₂ phase was obtained firstly from reaction of PCS and Ti. Ti₃SiC₂ formation starts at 1300 °C and its amount increases significantly in a narrow temperature range between 1400 °C and 1500 °C. In addition, addition of CaF₂ can promote the formation of Ti₃SiC₂ phase.     

Fabrication of Monolithic Ti3SiC2 Ceramic Through Reactive Sintering of Ti/Si/2TiC

Fabrication of monolithic Ti₃SiC₂ has been investigated through the route of reactive sintering of Ti/Si/2TiC mixtures. Significant phase differences existed between the surface and the interior of as-synthesized products due to the evaporation of Si during the reaction process. The use of a 3Ti/SiC/C mixture as a powder bed could control the evaporation of Si and develop monolithic Ti₃SiC₂. A reaction model for the formation of Ti₃SiC₂ in the Ti/Si/2TiC system is discussed.On leave from     

Joining of SiC ceramic-based materials with ternary carbide Ti3SiC2

The joining of two pieces of SiC-based ceramic materials (SiC or C_f/SiC composite) was conducted using Ti₃SiC₂ as filler in vacuum in the joining temperatures range from 1200 °C to 1600 °C. The similar chemical reactions took place at the interface between Ti₃SiC₂ and SiC or C_f/SiC, and became more complete with joining temperature increases, and with the consequent increased joining strengths of the SiC and C_f/SiC joints. Based on the XRD and SEM analyses, it turns out that two reasons are most important for the high joining strengths of the SiC and C_f/SiC joints. One is the development of layered Ti₃SiC₂ ceramic, which has plasticity in nature and can contribute to thermal stress relaxation of the joints; the other is the chemical reactions between Ti₃SiC₂ and the base materials which result in good interface bonding.     

Effect of CuO addition to Nd(Zn1/2Ti1/2)O3 ceramics on sintering behavior and microwave dielectric properties

The microwave dielectric properties and microstructures of CuO-doped Nd(Zn_1/2Ti_1/2)O₃ ceramics prepared by the conventional solid-state route were investigated. The prepared Nd(Zn_1/2Ti_1/2)O₃ exhibits a mixture of Zn and Ti showing 1:1 order in the B-site. As an appropriate sintering aid, not only did CuO lower the sintering temperature, it could effectively hold back the evaporation of Zn in the Nd(Zn_1/2Ti_1/2)O₃. Moreover, CuO only resided in boundaries, which was confirmed by EDX analysis. The measured lattice parameters of CuO-doped Nd(Zn_1/2Ti_1/2)O₃ (a = 5.4652 ± 0.0005 ?, b = 5.6399 ± 0.0007 ?, c = 7.7797 ± 0.0008 ? and β = 90.01 ± 0.01°) retained identical to that of the pure Nd(Zn_1/2Ti_1/2)O₃ in all cases. In comparison with the pure Nd(Zn_1/2Ti_1/2)O₃ ceramics, specimen with 1 wt.% CuO addition possesses a compatible combination of dielectric properties with a ε_r of 30.68, a Q × f of 158,000 GHz (at 8 GHz) and a τ_f of − 45 ppm/°C at 1270 °C. It also indicated a 60 °C lowering in the sintering temperature. The proposed dielectrics can be a very promising candidate material for microwave or millimeter wave applications requiring extremely low dielectric loss.     

Multiferroic properties of BiFeO3/Bi4Ti3O12 double-layered thin films fabricated by chemical solution deposition

Multiferroic BiFeO₃/Bi₄Ti₃O₁₂ (BFO/BTO) double-layered film was fabricated on a Pt(111)/Ti/SiO₂/Si(100) substrate by a chemical solution deposition method. The effect of an interfacial BTO layer on electrical and magnetic properties of BFO was investigated by comparing those of pure BFO and BTO films prepared by the same condition. The X-ray diffraction result showed that no additional phase was formed in the double-layered film, except BFO and BTO phases. The remnant polarization (2P_r) of the double-layered film capacitor was 100 μC/cm² at 250 kV/cm, which is much larger than that of the pure BFO film capacitor. The magnetization-magnetic field hysteresis loop revealed weak ferromagnetic response with remnant magnetization (2M_r) of 0.4 kA/m. The values of dielectric constant and dielectric loss of the double-layered film capacitor were 240 and 0.03 at 100 kHz, respectively. Leakage current density measured from the double-layered film capacitor was 6.1 × 10^− 7 A/cm² at 50 kV/cm, which is lower than the pure BFO and BTO film capacitors.     

Current Status in Layered Ternary Carbide Ti3SiC2, a Review

This article provides a review of current research activities that concentrate on Ti₃SiC₂. We begin with an overview of the crystal and electronic structures, which are the basis to understand this material. Followings are the synthetic strategies that have been exploited to achieve, and the formation mechanism of Ti₃SiC₂. Then we devote much attentions to the mechanical properties and oxidation/hot corrosion behaviors of Ti₃SiC₂ as well as some advances achieved recently. At the end of this paper, we elaborate on some new discoveries in the Ti₃SiC₂ system, and also give a brief discussion focused on the "microstructure -property" relationship.     

Interfacial microstructure of Si3N4/Si3N4 brazing joint with Cu–Zn–Ti filler alloy

In this study, Si₃N₄ ceramic was jointed by a brazing technique with a Cu–Zn–Ti filler alloy. The interfacial microstructure between Si₃N₄ ceramic and filler alloy in the Si₃N₄/Si₃N₄ joint was observed and analyzed by using electron-probe microanalysis, X-ray diffraction and transmission electron microscopy. The results indicate that there are two reaction layers at the ceramic/filler interface in the joint, which was obtained by brazing at a temperature and holding time of 1223 K and 15 min, respectively. The layer nearby the Si₃N₄ ceramic is a TiN layer with an average grain size of 100 nm, and the layer nearby the filler alloy is a Ti₅Si₃N_x layer with an average grain size of 1–2 μm. Thickness of the TiN and Ti₅Si₃N_x layers is about 1 μm and 10 μm, respectively. The formation mechanism of the reaction layers was discussed. A model showing the microstructure from Si₃N₄ ceramic to filler alloy in the Si₃N₄/Si₃N₄ joint was provided as: Si₃N₄ ceramic/TiN reaction layer/Ti₅Si₃N_x reaction layer/Cu–Zn solution.     

Ti3SiC2-SiC复合材料的耐磨擦磨损性能

以商用硅粉、碳粉、钛粉以及少量的铝粉为原料, 利用放电等离子烧结技术原位反应制备了Ti₃SiC₂-SiC复合材料. 利用盘销式摩擦磨损实验机测试了Ti₃SiC₂-SiC复合材料的耐摩擦磨损性能. 结果表明: 随着SiC含量的增加, 材料相对于硬化钢的摩擦系数和磨损系数均呈下降趋势, 这表明SiC的引入提高了复合材料的抗摩擦磨损性能. Ti₃SiC₂单相材料摩擦系数在0.8～1.0之间, 而Ti₃SiC₂-40vol% SiC复合材料在稳态下的摩擦系数达到了0.5, Ti₃SiC₂-40vol% SiC复合材料相对于Ti₃SiC₂单相材料的磨损系数下降了一个数量级. Ti₃SiC₂-SiC复合材料的高抗磨损性归因于磨损类型的改变以及SiC良好的抗氧化性能.     

Dependence of Zr content on electrical properties of Bi3.15Nd0.85Ti3-xZrxO12 thin films synthesized by chemical solution deposition (CSD)

The Bi_3.15Nd_0.85Ti_3-xZr_xO₁₂ (BNTZ) thin films with Zr content (x = 0, 0.05, 0. 1, 0.15, and 0.2) were prepared on Pt/Ti/SiO₂/Si (100) substrates by chemical solution deposition (CSD) technique. The crystal structures of BNTZ films were analyzed by X-ray diffraction (XRD). The effects of Zr contents on the ferroelectric, dielectric properties, and leakage current of BNTZ films were thoroughly investigated. The XRD results demonstrated that all the films possessed a single phase bismuth-layered structure and exhibited the highly preferred (117) orientation. Among these films, the film with Zr content x = 0.1 held the maximum remanent polarization (2P_r) of 50.21 μC/cm² and a low coercive field (2E_c) of 210 kV/cm.     

The production of flower-like NiFe2O4 superstructures consisting of nanosheets via the thermolysis of a heterometallic oxo-centered trinuclear complex

Flower-like NiFe₂O₄ superstructures consisting of nanosheets have been successfully synthesized by direct thermolysis of a heterometallic oxo-centered trinuclear complex [NiFe₂O(CH₃COO)₆(H₂O)₃·2H₂O] (NiFe-HOTC) at 400 °C for 6 h in a horizontal tube furnace. The composition and structure of the products were investigated by X-ray diffraction (XRD) and infrared spectra (IR). XRD analysis revealed a pure ferrite phase with high crystallinity. Morphological investigation by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) showed NiFe₂O₄ flowers with average diameter varying from 0.5 to 3 μm consist of nanosheets with average edge length in the range of 60-300 nm and thickness of about 30 nm. Furthermore, energy dispersive X-ray analysis (EDX) demonstrated that the atom ration of Ni, Fe and O is 1:2:4. In addition, magnetic measurements showed that the obtained flower-like NiFe₂O₄ are ferromagnetic at room temperature.     

The effect of fabrication processes on the mechanical and interfacial properties of SiCf/Cu–matrix composites

Three groups of SiC_f/Ti/Cu composites were prepared under conditions of 650 °C + 105 min (sample 1#), 750 °C + 85 min (sample 2#) and 840 °C + 50 min (sample 3#), respectively, by foil-fiber-foil method (FFF), and their room temperature tensile strengths were established. The aim is to model the reactive bonding states between Ti and SiC fiber and between Ti and Cu when Ti is used as interfacial adhesion promoters in SiC_f/Cu–matrix composites. The fracture surfaces, SiC_f/Ti interfaces and Ti/Cu interfaces were investigated by scanning electron microscopy (SEM), optical microscopy and energy dispersive spectroscopy (EDS). The tensile tests show that the tensile strengths of samples 1# and 2# are not obviously enhanced due to the weak bonding strength between SiC fiber and Ti, while those of sample 3# are achieved above 90% of ROM (the rule of mixtures) strength because of excellent bonding between SiC fiber and Ti. However, there are distinct Ti/Cu interfacial reaction zones after the three processes, which are approximately 5.4, 9.0 and 13.3 μm thick, respectively. The Ti/Cu interfacial reaction products are mainly distributed in four layers. In samples 1# and 2#, the products are predicted to be Cu₄Ti, Cu₃Ti₂, CuTi and CuTi₂ according to their chemical compositions determined by EDS, while in sample 3#, the products are Cu₄Ti, Cu₄Ti₃, CuTi and CuTi₂. Additionally, the relationships between the thickness of Ti interlayer and its reaction with C and Cu are also discussed, and an optimal thickness of Ti is introduced.     

V-doping effects on ferroelectric properties of K0.5Bi4.5Ti4O15 thin films

V-doped K_0.5Bi_4.5Ti₄O₁₅ (K_0.5Bi_{4.5 − x/3}Ti_4 − xV_xO₁₅, KBTiV-x, x = 0.00, 0.01, 0.03, and 0.05) thin films were prepared on a Pt(111)/Ti/SiO₂/Si(100) substrate by a chemical solution deposition method. The thin films were annealed by using a rapid thermal annealing process at 750 °C for 3 min in an oxygen atmosphere. Among them, KBTiV-0.03 thin film exhibited the most outstanding electrical properties. The value of remnant polarization (2P_r) was 75 μC/cm² at an applied electric field of 366 kV/cm. The leakage current density of the thin film capacitor was 5.01 × 10⁻⁸ at 100 kV/cm, which is approximately one order of magnitude lower than that of pure K_0.5Bi_4.5Ti₄O₁₅ thin film capacitor. We found that V doping is an effective method for improving the ferroelectric properties of K_0.5Bi_4.5Ti₄O₁₅ thin film.     

Synthesis of CaCu3Ti4O12 ceramic via a sol-gel method

The novel nano-ultrafine powders for the preparation of CaCu₃Ti₄O₁₂ ceramic were prepared by the sol-gel method and citrate auto-ignition method. The obtained precursor powders were pressed, sintered at 1000 °C to fabricate microcrystal CaCu₃Ti₄O₁₂ ceramic. The microcrystalline phase of CaCu₃Ti₄O₁₂ was confirmed by X-ray powder diffraction (XRD). The morphology and size of the grains of the powders and ceramics under different heat treatments were observed using scanning electron microscopy (SEM). The relative dielectric constant of the ceramic sintered at 1000 °C was measured with a magnitude of more than 10⁴ at room temperature, which was approaching to those of Pb-containing complex perovskite ceramics, and the loss tangent was less than 0.20 in a broad frequency region. The relative dielectric constant and loss tangent were also compared with that of CaCu₃Ti₄O₁₂ ceramic prepared by other reported methods.     

Influence of Cu addition on the self-propagating high-temperature synthesis of Ti5Si3 in Cu–Ti–Si system

The self-propagating high-temperature synthesis (SHS) reactions can take place in Cu–Ti–Si systems with Cu additions of 10–50 wt.%, and the products only consist of Ti₅Si₃ and Cu phases, without any transient phase. In Ti–Si system, most of the Ti₅Si₃ grains synthesized exhibit the polygon-shaped coarse appearance with an obviously sintered morphology. When Cu content increases from 10 to 50 wt.%, however, the Ti₅Si₃ exhibits cobblestone-like shape with a relatively smooth surface, and its average size decreases significantly from 15 to 2 μm or less. The formation mechanism of Ti₅Si₃ in Cu–Ti–Si system is characterized by the solution, reaction and precipitation processes. Furthermore, the addition of Cu has a great influence on the volume change between green and reacted preforms. The volume change increases with Cu content increasing from 0 to 20 wt.%, and then decreases with the content further increasing from 20 to 50 wt.%. The addition of Cu to Ti–Si system significantly decreases the onset temperature of the reaction during differential scanning calorimetry process, which is even much lower than the α → β transition temperature of Ti (882 °C), suggesting that the reaction could be greatly facilitated by Cu addition. As a result, the role of Cu serves not only as a diluent but also as a reactant and participates in the self-propagating high-temperature synthesis reaction process.     

Synthesis and electrochemical properties of Ti doped Li3 − xFe2 − xTix(PO4)3/C cathode materials

Li_3 − xFe_2 − xTi_x(PO₄)₃/C (x = 0-0.4) cathodes designed with Fe doped by Ti was studied. Both Li₃Fe₂(PO₄)₃/C (x = 0) and Li_2.8Fe_1.8Ti_0.2(PO₄)₃/C (x = 0.2) possess two plateau potentials of Fe³⁺/Fe²⁺ couple (around 2.8 V and 2.7 V vs. Li⁺/Li) upon discharge observed from galvanostatic charge/discharge and cyclic voltammetry. Li_2.8Fe_1.8Ti_0.2(PO₄)₃/C has higher reversibility and better capacity retention than that of the undoped Li₃Fe₂(PO₄)₃/C. A much higher specific capacity of 122.3 mAh/g was obtained at C/20 in the first cycle, approaching the theoretical capacity of 128 mAh/g, and a capacity of 100.1 mAh/g was held at C/2 after the 20th cycle.     

Effects of Bi2O3 and Cr2Ti3O9 Co-doping on dielectric properties in BaTiO3-based ceramics

A microwave ceramic with general composition (1-x-y) BaTiO₃ + x Cr₂Ti₃O₉ + y Bi₂O₃ has been prepared by solid state synthesis at 1300-1400 °C. The phase composition, perovskite structural parameters and dielectric properties have been obtained by X-ray diffraction and dielectric measurements as a function of chemical composition and temperature. At low doping levels the formation of BaTiO₃-based solid solution has been found. The precipitation of BaCrO₃ has been detected at x = y = 2.0 mol%. A model of the incorporation of Cr³⁺ and Bi³⁺ ions into BaTiO₃-based crystal lattice has been proposed. Diffused phase transition in the temperature range 100-140 °C have been revealed by dielectric measurements for different ceramic composition. As high dielectric constant as 7311 and as low dielectric loss as 0.02 have been found for the composition of 0.98BaTiO₃-0.01Cr₂Ti₃O₉-0.01Bi₂O₃.     

The Mn + 1AXn phases: Materials science and thin-film processing

This article is a critical review of the M_n + 1AX_n phases (“MAX phases”, where n = 1, 2, or 3) from a materials science perspective. MAX phases are a class of hexagonal-structure ternary carbides and nitrides (“X”) of a transition metal (“M”) and an A-group element. The most well known are Ti₂AlC, Ti₃SiC₂, and Ti₄AlN₃. There are ~ 60 MAX phases with at least 9 discovered in the last five years alone. What makes the MAX phases fascinating and potentially useful is their remarkable combination of chemical, physical, electrical, and mechanical properties, which in many ways combine the characteristics of metals and ceramics. For example, MAX phases are typically resistant to oxidation and corrosion, elastically stiff, but at the same time they exhibit high thermal and electrical conductivities and are machinable. These properties stem from an inherently nanolaminated crystal structure, with M_n + 1X_n slabs intercalated with pure A-element layers. The research on MAX phases has been accelerated by the introduction of thin-film processing methods. Magnetron sputtering and arc deposition have been employed to synthesize single-crystal material by epitaxial growth, which enables studies of fundamental material properties. However, the surface-initiated decomposition of M_n + 1AX_n thin films into MX compounds at temperatures of 1000-1100 °C is much lower than the decomposition temperatures typically reported for the corresponding bulk material. We also review the prospects for low-temperature synthesis, which is essential for deposition of MAX phases onto technologically important substrates. While deposition of MAX phases from the archetypical Ti-Si-C and Ti-Al-N systems typically requires synthesis temperatures of ~ 800 °C, recent results have demonstrated that V₂GeC and Cr₂AlC can be deposited at ~ 450 °C. Also, thermal spray of Ti₂AlC powder has been used to produce thick coatings. We further treat progress in the use of first-principle calculations for predicting hypothetical MAX phases and their properties. Together with advances in processing and materials analysis, this progress has led to recent discoveries of numerous new MAX phases such as Ti₄SiC₃, Ta₄AlC₃, and Ti₃SnC₂. Finally, important future research directions are discussed. These include charting the unknown regions in phase diagrams to discover new equilibrium and metastable phases, as well as research challenges in understanding their physical properties, such as the effects of anisotropy, impurities, and vacancies on the electrical properties, and unexplored properties such as superconductivity, magnetism, and optics.     

Structure and thermal conductivity of Gd2(TixZr1 − x)2O7 ceramics

The Gd₂(Ti_xZr_1 − x)₂O₇ (x = 0, 0.25, 0.50, 0.75, 1.00) ceramics were synthesized by solid state reaction at 1650 °C for 10 h in air. The relative density and structure of Gd₂(Ti_xZr_1 − x)₂O₇ were analyzed by the Archimedes method and X-ray diffraction. The thermal diffusivity of Gd₂(Ti_xZr_1 − x)₂O₇ from room temperature to 1400 °C was measured by a laser-flash method. The Gd₂Zr₂O₇ has a defect fluorite-type structure; however, Gd₂(Ti_xZr_1 − x)₂O₇ (0.25 ≤ x ≤ 1.00) compositions exhibit an ordered pyrochlore-type structure. Gd₂Zr₂O₇ and Gd₂Ti₂O₇ are infinitely soluable. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ increases with increasing Ti content under identical temperature conditions. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ first decreases gradually with the increase of temperature below 1000 °C and then increases slightly above 1000 °C. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ is within the range of 1.33 to 2.86 W m^− 1 K^− 1 from room temperature to 1400 °C.