氮化铝陶瓷直接覆铜技术

研制出一种直接覆铜ＡｌＮ基板。先将ＡｌＮ 陶瓷基板作表面氧化处理, 然后在１ ０６３～１ ０７０℃下, 氮气氛中煅烧, 使铜箔直接焊敷在ＡｌＮ基板上。铜箔的剥离强度可达到８５３．２ Ｐａ, 厚度为０．１～０．５ ｍ ｍ , 最大基板面积可达５０ ｍ ｍ ×５０ ｍ ｍ     

大电流AlN直接焊覆铜基板技术

本研究通过对ＡｌＮ陶瓷表面及Ｃｕ箔表面进行处理,然后在１０４０￣１０７０℃的气氛中实施ＡｌＮ陶瓷与Ｃｕ箔直接焊覆工艺,制作出ＡｌＮ－ＤＢＣ基板。并对ＡｌＮ－ＤＢＣ基板的形成机理,在可靠性做了初步探讨,取得了一定成果。同一     

Si3N4覆铜基板的界面空洞控制技术

为满足新一代SiC基功率模块的先进封装需求,研究了Si3N4覆铜活性金属焊接(AMB)基板的界面空洞控制技术,使Si3N4陶瓷与铜箔界面处的空洞率低于1％.选用Ag-Cu-Ti活性金属焊片作为Si3N4覆铜基板的焊料层,其中的活性组分Ti可与Si3N4生成界面反应层TiN,该材料是界面空洞控制的关键.在分析界面空洞形成机理的基础上,以空洞率为指标,对原材料前处理、AMB工艺参数(焊接压力和焊接温度)进行全因子试验设计(DOE)及方差分析,得到最佳的参数组合为:化学法与还原法相结合的原材料前处理方式,焊接压力约2N,焊接温度900℃.通过原材料前处理和AMB工艺优化的界面空洞控制技术,研制出界面空洞率小于1％的Si3N4覆铜基板,能够满足SiC.基功率模块封装基板的高可靠应用需求.     

氮化铝陶瓷基板发展现状

本文较详细地阐述了氮化铝粉，氮化铝基板及氮化铝基板金属化的制造工艺，研究生产发展现状，并对一些特性进行了分析。     

IPM中覆铜陶瓷基板的热传导性能研究北大核心CSCD

覆铜陶瓷(DBC)基板在功率模块的封装中应用广泛,其热传导性能对于功率模块的可靠性至关重要。基于智能功率模块(IPM)中覆铜陶瓷基板的图形化结构,制作不同材料及厚度的DBC基板样品并进行了热传导性能测试。通过仿真研究,进一步讨论DBC基板各层材料及厚度等因素的影响规律。实验与仿真结论一致,DBC基板的热传导性能随铜层厚度增加先增强后降低,随陶瓷层厚度增加而降低。在瞬态研究中发现,相同功率加载的初始10 s内,不同材料结构的DBC基板样品最高温度差高于55℃。因此,优化DBC基板的陶瓷层材料和尺寸设计对于提升功率模块的热可靠性有着重要的意义。     

一种在氮化铝陶瓷基板上的化学镀铜法

氮化铝是一种性能优良的绝缘材料,热导率高,介电常数低（εr=8．9）,能应用于微波和大功率电路中。本文介绍了一种简单有效的在氮化铝陶瓷上制作铜图形的两步工艺方法。第一步,通过一种紫外激光束照射氮化铝基板表面来选择性地制作金属图案;第二步,将被照射过的氮化铝基板浸入专门的含铜溶液的镀槽内进行化学镀铜。     

氮化铝陶瓷的氧化机理研究

本文研究了不同氧化处理下氮化铝陶瓷的氧化情况,并使用Mo-Mn法进行金属化,测试封接强度及气密性,从而探究氮化铝瓷的氧化机制,氮化铝基瓷与氧化层之间的结合。结果表明:经过1100℃/1h高温氧化处理,氮化铝陶瓷表面几乎没有氧化。在1250℃/1h、1250℃/2h,表面生成了氧化铝,氧化层主晶相为AlN与Al₂O₃;在1350℃/1h下,氧化层主晶相为Al₂O₃;氧化层表面有明显的裂纹,均漏气。对不同处理后的氧化铝层表面进行Mo-Mn法金属化,当氧化层厚度较薄时,断裂发生在氧化层。氮化铝瓷与氧化铝层之间的结合机理可能是在两者之间产生了AlON等中间物,从而实现了氮化铝瓷与氧化层之间牢固的连接。     

Polarity Analysis of Self-Seeded Aluminum Nitride Crystals Grown by Sublimation

Self-seeded aluminum nitride (AlN) crystals were successfully grown in a tungsten crucible by the sublimation method. The polarities along the growth direction of these AlN samples were characterized by chemical etching, combined with high-resolution transmission electronic microscopy (HRTEM) and Raman spectroscopy. It has been proven by our experimental results that etching in KOH solution and in molten KOH-NaOH can be a reliable method to determine the surfaces with different polarities. Chemically active N-polar (0001) AlN surfaces were removed appreciably, while only etch pits related to threading dislocations were observed on Al-polar surfaces after chemical etching. HRTEM images revealed that there are noticeable inversion domain boundaries in the samples. Raman spectrum measurements showed the vibration mode change before and after etching in the same geometrical arrangement.     

以氮化铝陶瓷为基板的倒装式封装工艺研究

详细比较了氮化铝的各各上金属化工艺。分别研究化学镀镍与激光诱导淀积实现金属化的方法。测量表明,两种方法制备的金属层与氮化铝的粘附力均大于１０ＭＰａ。同时对这身份钟方法的特点与适用范围进行概述。     

大腔体高密度高可靠陶瓷封装技术研究

文章对应用于航天计算机系统封装的大腔体高密度高可靠高温金属化陶瓷管壳,根据用户提出的特殊要求,从设计到工艺,较详细论述其研制过程、关键工艺、技术难点、以及与通常的DIP、CQFP、CLCC、CPGA等的不同之处,并指出今后需要努力的方向。     

Preparation of Oriented Aluminum Nitride Thin Films on Polyimide Films and Piezoelectric Response with High Thermal Stability and Flexibility

c‐Axis oriented aluminum nitride (AlN) thin films are successfully prepared on amorphous polyimide films by radiofrequency magnetron reactive sputtering at room temperature. Structural analysis shows that the AlN films have a wurtzite structure and consist of c‐axis oriented columnar grains about 100 nm wide. The full width at half maximum of the X‐ray diffraction rocking curves and piezoelectric coefficient d₃₃ of the AlN films are 8.3° and 0.56 pC N^–1, respectively. The AlN films exhibit a piezoelectric response over a wide temperature range, from –196 to 300 °C, and can measure pressure within a wide range, from pulse waves of hundreds of pascals to 40 MPa. Moreover, the sensitivity of the AlN films increases with the number of times it was folded, suggesting that we can control the sensitivity of the AlN films by changing the geometric form. These results were achieved by a combination of preparing the oriented AlN thin films on polyimide films, and sandwiching the AlN and polymer films between top and bottom electrodes, such as Pt/AlN/polyimide/Pt. They are thin (less than 10 μm), self powered, adaptable to complex contours, and available in a variety of configurations. Although AlN is a piezoelectric ceramic, the AlN films are flexible and excellent in mechanical shock resistance.     

氮化铝陶瓷金属化技术的探讨

本文对目前常用的电子陶瓷(例如,氮化铝陶瓷、氧化铍陶瓷、氧化铝陶瓷)的性能和金属化技术进行了初步的比较,提出了氮化铝陶瓷要加强其应用研究,特别是要进一步提高其Mo-Mn法封接强度,论述了氧化铍陶瓷比氮化铝陶瓷DBC技术上的某些优势。     

X-Ray Photoelectron Spectroscopy Characterization of Aluminum Nitride Surface Oxides: Thermal and Hydrothermal Evolution

Oxidized surfaces of aluminum nitride (AlN) epilayers grown on sapphire substrates and of AlN bulk crystals grown by physical vapor transport were studied by x-ray photoelectron spectroscopy (XPS). Analysis of the oxygen core level spectra showed approximately equal contributions from oxygen in two bonding states, which were identified by the binding energies and relative separation of the fitted peaks as OH⁻ and O²⁻. The oxide on air-exposed AlN surfaces was identified as aluminum oxide hydroxide. Systematic annealing experiments were conducted in vacuum to study the thermal evolution of hydroxide layers, and a dehydration mechanism resulting in the formation of Al₂O₃ at high temperature was identified.     

毫米波腔体滤波器谐振腔平整度误差研究

平整度误差引起的寄生量变化对毫米波滤波器的自谐振频率及品质因数有重大影响,为获得低插损、高品质因数的滤波器结构,针对滤波器制作中存在的平整度误差,该文开展了一系列的研究。通过对基于SU-8胶的毫米波腔体滤波器电铸工艺实验的反复探索,制定出一套能减小毫米波滤波器谐振腔平整度误差的最优电铸方案,即利用脉冲小电流进行电铸。实验结果表明,利用50mA小电流密度电铸能快速获得平整致密高质量的滤波器谐振腔,其铸层表面平整度误差小于2μm;制作精度高,且能实现快速制作。可见,小电流脉冲电铸得到的铸层平整、致密,可有效减小毫米波滤波器的寄生效应,提高系统的精度及灵敏度。     

PECVD法氮化硅薄膜制备工艺的研究

采用等离子体增强化学气相沉积法（PECVD）在单晶硅衬底上制备了氮化硅薄膜,分别使用膜厚仪、椭圆偏振仪等手段对薄膜的厚度、折射率等参数进行了表征。研究了硅烷氨气流量比、极板间距等工艺参数对氮化硅薄膜性能的影响,发现当硅烷氨气流量比增加时,薄膜厚度和折射率均随之增加,并发现退火工艺可以有效降低氮化硅薄膜的氢氟酸腐蚀速率。     

氮化铝共烧基板金属化及其薄膜金属化特性研究

大规模集成电路的发展,对芯片之间的互连提出了更高的要求,高端电子系统中高密度封装技术逐渐成为发展的主流。多芯片组件(MCM)是微电子封装的高级形式,它是把裸芯片与微型元件组装在同一个高密度布线基板上,组成能够完成一定的功能的模块甚至子系统。MCM还能够实现电子系统的小型化、高密度化,是实现系统集成的重要途径,在MCM中高密度布线的多层基板技术是实现高密度封装的关键。