荧光粉涂覆方式对白光LED光色指标的影响

文章采用TRACEPRO软件建立了三种白光LED的光学模型:(1)芯片直接涂覆荧光粉;(2)芯片涂覆硅胶后涂覆荧光粉层;(3)芯片涂覆荧光粉后涂覆硅胶层.通过改变荧光粉的摩尔浓度或硅胶厚度来考察白光LED的光色指标,如光通量、色温及显色指数的变化.研究结果表明:第一种和第二种涂覆方式中,光色指标随着荧光粉摩尔浓度或硅胶厚度的改变呈规律性变化;第三种涂覆方式中,色温及显色指数的变化趋势不稳定,第三种方式光通量高于前两种,最大值可达到87.31m.三种方式的显色指数在70左右.研究结论为白光LED工艺设计提供参考和依据.     

Status and prospects for phosphor-based white LED packaging

The status and prospects for high-power, phosphor-based white light-emitting diode (LED) pack-aging have been presented. A system view for packaging design is proposed to address packaging issues. Four aspects of packaging are reviewed: optical control, thermal management, reliability and cost. Phosphor materials play the most important role in light extraction and color control. The conformal coating method improves the spatial color distribution (SCD) of LEDs. High refractive index (RI) encapsulants with high transmittance and modified surface morphology can enhance light extraction. Multi-phosphor-based packaging can realize the control of correlated color temperature (CCT) with high color rendering index (CRI). Effective thermal management can dissipate heat rapidly and reduce thermal stress caused by the mismatch of the coefficient of thermal expansion (CTE). Chip-on-board (COB) technology with a multi-layer ceramic substrate is the most promising method for high-power LED packaging. Low junction temperature will improve the reliability and provide longer life. Advanced processes, precise fabrication and careful operation are essential for high reliability LEDs. Cost is one of the biggest obstacles for the penetration of white LEDs into the market for general illumination products. Mass production in terms of CoB, system in packaging (SIP), 3D packaging and wafer level packaging (WLP) can reduce the cost significantly, especially when chip cost is lowered by using a large wafer size.     

A study on the heat dissipation of high power multi-chip COB LEDs

In this study, the heat dissipation efficiencies of high power multi-chip COB (Chip-on-Board) LEDs with five different chip gaps were compared by assessing their junction temperature (T_j) and thermal resistance (R_th). Junction temperatures were measured using an IR camera and were also simulated by computational fluid dynamics (CFD) software. The effects of heat sinks with different surface areas, heat slugs made of different materials and different injection currents (different wattages) on high power LED junction temperatures are discussed. In addition, the optical characteristics of the LED, such as its lumens and luminous efficiency are evaluated. The experimental results show that a chip with a smaller gap has a higher junction temperature and more thermal resistance, and the junction temperature difference between the LEDs with the smallest and largest chip gaps is 3.12 °C. Optical performance analyses show that the LED with a larger chip gap has higher lumens and higher luminous efficiency. Thus, higher junction temperatures reduce the optical performance of high power LEDs.     

荧光粉预沉淀对COB白光LED光色参数的影响

制作了高光效高显指COB封装LED光源,研究了点涂荧光胶后光通量、色坐标、光谱等光色参数随荧光粉预沉淀时间的变化关系。研究结果表明,在预沉淀初期(约5min),LED光源光色参数随预沉淀时间变化较大,之后进入一个缓慢变化的阶段。研究认为这一现象的出现是因为粒径不同的荧光粉颗粒沉淀速度不同造成的,预沉淀初期,大粒径的荧光粉颗粒迅速沉淀,造成LED光源光色参数剧烈变化,之后小粒径的荧光粉缓慢沉淀,LED光源光色参数也呈现缓慢变化的趋势。在实际生产中,将预沉淀时间控制在15～25min,取得了良好的效果,主货率(颜色在一个档位的比例)达到98%以上。     

荧光粉浓度和电流强度对白光LED特性的影响

讨论了荧光粉浓度及驱动电流强度对白光LED特性的影响。采用软件模拟实验和实际封装测试相结合的研究方法进行分析研究。对荧光粉浓度变化对白光LED光通量和相关色温(CCT)的影响进行了三维光线追迹模拟,并且进行了实际的封装验证。另外对白光LED的节温和显色性也做了深入细致的研究。研究结果表明:CCT随着荧光粉浓度的增大而减小,光通量则先上升后下降。同时由荧光粉浓度和驱动电流强度变化所引起的节温升高会降低荧光粉的转换效率。对显色性而言,采用高浓度荧光粉封装的白光LED有相对低的显色指数;并且显色指数随着驱动电流强度的增加而升高,最终趋于稳定。     

三芯片集成高显色指数白光LED的研究

运用基于蒙特卡罗的光线追迹方法,对采用"光转换"兼"多色混合"技术的白光LED的显色指数、相关色温、光通量、光辐射功率、荧光粉颗粒密度和色坐标进行了仿真计算和优化选择。通过改变红、绿、蓝三种LED芯片的组合方式和红、绿、黄三种荧光粉的混合方式及各色荧光粉的密度,在保证有合理的光通量输出的条件下,得到了不同色温区的高显色指数白光LED。从显色指数角度看,冷白、正白和暖白光应分别选择BBB芯片+绿、红色荧光粉、BBB芯片+黄、红色荧光粉和RBB芯片+黄色荧光粉组合。实验上测试了采用这几种组合方式的白光LED光谱、显色指数、色温、光通量和色坐标,实验数据与仿真结果基本吻合。     

一种色温可调LED的封装与性能研究

LED以其优良的性能结合智能控制系统,被越来越多地应用于室内外照明场合,但同时也对其色温、显色指数等色度指标提出了新的要求.为了应对这种挑战,设计了一种新型的色温可调LED,利用大功率LED芯片结合金属基板封装出了色温可调的暖白光高显色指数LED样品,对其发光光谱、色温和显色指数随电流的变化进行了测试,发现LED的光谱...     

COB封装对LED光学性能影响的研究

针对LED高光效、低功耗的要求,文章在分析LED光学性能的基础上,采用了COB(ChipOn Board)即板上芯片封装技术。研究了不同封装工艺和材料,分析比较其对LED光通量、光效和色温的影响。研究首先介绍COB封装的结构、优点及其实用性,然后分析影响LED光学性能的因素,最后进行测试。在实验过程中,发现COB封装结构除了具有保护芯片的功能外,还可以提高出光效率,并实现特定的光学分布。实验结果表明:文章提出的封装工艺对于提高光通量和光效、调节色温有良好的效果。     

基于COB技术的LED散热性能分析

当前,散热问题已成为影响LED寿命、光效、光衰和色温等技术参数的重要因素。文章在综合分析散热技术和LED封装对散热性能影响的基础上,利用COB(板上芯片)封装技术,将LED芯片直接封装在铝基板上,研制成了一种基于COB封装技术的LED。与SMD封装LED进行比较,分析了其散热性能。分析结果表明:基于COB封装技术的LED减少了LED器件的结构热阻和接触热阻,使其具有良好的散热性能。     

COB封装全光谱LED光源及其光电特性

为了提高光源的显色指数,设计、制作一种COB封装的全光谱LED光源,通过在设计中增加峰值波长415nm的紫光LED芯片和发光峰值波长497nm、655nm的荧光粉,弥补了普通LED光源在紫光、蓝绿光和红光等光谱区间的能量分布不足。实验结果表明,发光效率达到103.34lm/W,全光谱LED光源显色指数高达99.38,接近日光100的显色指数,能够满足高质量照明领域对光源显色性的要求。     

基于板上封装技术的大功率LED热分析

根据大功率LED板上封装(COB)技术的结构特点,提出三种COB方法.第一种方法是把芯片直接键合在铝制散热器k(COB-III型),另外两种方法是分别把芯片键合在铝基板上和铝基板的印刷线路板上(COB-II和COB-I型),并对三种COB的热特性进行有限元模拟、实验测量和对照分析.结果表明:在环境温度为30℃时,采用第...     

Correlated Color Temperature Tunable Multi-chip Light Emitting Diodes Light Source Design

One of the methods to derive white light from light emitting diodes（LEDs） is the multi-chip white LED technology, which mixes the light from red, green and blue LEDs. Introduced is an optimal algorithm for the spectrum design of the multi-chip white LEDs in this paper. It optimizes the selection of single color LEDs and drive current controlling, so that the multi-chip white LED achieves the target correlated color temperature （CCT）, as well as high luminous efficacy and good color rendering. A CCT tunable LED light source with four high-power LEDs is realized based on the above optimal design. Test results show that it maintains satisfactory color rendering and stable luminous efficacy across the whole CCT tuning range. Finally, discussed are the design improvement and the prospect of the future applications of the CCT tunable LED light source.     

高亮度高纯度白光LED封装技术研究

通过对高功率InGaN(蓝)LED倒装芯片结构+YAG荧光粉构成白光LED的分析,可以得出这种结构能提高发光效率和散热效果的结论。通过对白光LED的构成和电流/温度/光通量的分析,可知在蓝宝石衬底和环氧树脂的界面间涂敷一层硅橡胶能改善光的折射率。改进光学器件的封装技术,可以大幅度提高大功率LED的出光率(光通量)。     

COB封装LED器件寿命评价方法研究

COB封装的LED器件应用日趋广泛,但是其寿命评价方法仍限于做3000h或6000h的光通维持率试验,试验本身耗时较长,因此本文基于半导体器件的指数衰减规律和LED光通量的慢退化特性提出一种加速试验方法,对器件进行高温加速寿命试验,并对试验结果进行计算,得到了器件在加速试验温度下的L70寿命,然后利用相应水平的激活能,得到了在较低结温下的L70寿命。     

高亮度InGaN基白光LED特性研究

利用自行研制的InGaN GaNSQW蓝光LED芯片和YAG :Ge3 荧光粉制作了高亮度白光LED(Φ3) ,并对其发光强度、色度坐标、I V、色温及显色性等特性进行了研究 .实验结果表明 :室温下 ,正向电流为 2 0mA时 ,白光LED的轴向发光强度为 1 1～ 2 3cd ,正向电压小于 3 5V ,色度坐标为 (0 2 8,0 34) ,显色指数约为 70 .     

白光LED荧光粉远场涂覆光学性质

研究了白光LED远场隔离封装中隔离距离对发光效率及相关色温(CCT)的影响。实验结果表明,低电流输入条件下,白光LED的发光效率随芯片表面到荧光粉层距离变化是非线性的,当芯片表面到荧光粉层距离为0.88mm时具有最佳发光效率74lm/W,白光LED相关色温随着距离的增加呈线性下降。这为白光LED的一次光学设计提供了实验依据。     

A spectrum-adjusted white organic light-emitting diode for the optimization of luminous efficiency and color rendering index

High luminous efficiency and high color rendering index (CRI) are both the foremost factors for white organic light-emitting diodes (WOLEDs) to serve as next generation solid-state lighting sources. In this paper, we show that both luminous efficiency and CRI can be improved by adjusting the green/red spectra of WOLEDs. With green emission spectra matching with the human photopic curve, the WOLEDs exhibit higher luminous efficiency and higher CRI. Theoretical calculation shows that by tuning the white emission spectra to maximally match with the human photopic curve, the luminous efficiency can be improved by 41.8% without altering the color coordinates, the color correlated temperature (CCT) and the external quantum efficiency (EQE) of the WOLEDs.     

瓦级大功率白光LED光色电特性研究

文章基于瓦级大功率白光LED在照明领域应用的广泛性和重要性,展开了瓦级大功率白光LED光色电特性的研究。采用大功率LED封装设备与紫外-可见光-近紫外光谱分析系统,制备并测量了瓦级大功率白色发光二极管（LED）在不同正向电流IF驱动下的光通量、电功率、发光效率、发射光谱和色品坐标等参数。研究表明,光通量与电功率随耳的增大呈亚线性增长的趋势,而荧光粉转换效率下降是影响其辐射功率的主要原因之一。当电流增大时,白光LED光谱的蓝光峰值出现先蓝移后红移的现象,而黄光部分光谱形状无明显变化。此外,色坐标x、y值均随着IF的增大而降低,主波长减小,色温值升高。     

Failure and degradation mechanisms of high-power white light emitting diodes

The investigation explores the factors that influence the long-term performance of high-power 1 W white light emitting diodes (LEDs). LEDs underwent an aging test in which they were exposed to various temperatures and electrical currents, to identify both their degradation mechanisms and the limitations of the LED chip and package materials. The degradation rates of luminous flux increased with electrical and thermal stresses. High electric stress induced surface and bulk defects in the LED chip during short-term aging, which rapidly increased the leakage current. Yellowing and cracking of the encapsulating lens were also important in package degradation at 0.7 A/85 °C and 0.7 A/55 °C. This degradation reduced the light extraction efficiency to an extent that is strongly related to junction temperature and the period of aging. Junction temperatures were measured at various stresses to determine the thermal contribution and the degradation mechanisms. The results provided a complete understanding of the degradation mechanisms of both chip and package, which is useful in designing highly reliable and long-lifetime LEDs.     

一体化封装LED结温测量与发光特性研究

基于一体化封装基板,制备了大功率白光LED。以低热阻的一体化封装基板为基础,设计了结温测量系统。利用光谱仪测得不同结温下LED的光电参数,并对其机理进行了分析。在工作电流为0.34A,所研究温度范围为10.8～114.9℃。实验结果表明,一体化封装的LED结温与正向电压、光通量、光效和色温有着良好的线性关系;结温的变化对主波长及色坐标影响甚微;结温的上升导致蓝光段强度下降且光谱发生红移,黄光段强度上升且光谱发生宽化,峰值波长由450nm转为550nm。