基于IGBT模块的电能质量治理设备能耗状况及节能分析

本文重点研究了基于IGBT模块的电能质量类治理设备的能耗状况及节能路径.首先,对典型拓扑结构的SVG、APF、MEC在额定输出工况下的损耗特性进行了分析,确定了主要耗能部分;随后,分析了IGBT模块能耗机理及降耗可行性路径;最后,总结出现阶段国内基于IGBT模块的电能质量类治理设备降低自身工作能耗的重点改进方向.     

Effect of IGBT switching dynamics on loss calculations in highspeed applications

The switching and conduction loss in bipolar devices are dependent on the switching intervals, especially when these intervals become small enough to prevent the device from reaching steady-state conditions. This behavior is quite pronounced for non-punch-through IGBT's, and is found to drastically decrease the overall switching loss of these devices in high frequency applications relative to values projected from conventional approaches. It also results in an unexpected dependence of net losses on duty cycle. The reasons behind this behavior are examined, and its implications for semiconductor loss calculations are discussed     

Non parametric study of the relationship between energy consumption, income and temperature

The main goal of this paper is to measure the efficiency in converting energy use in people’s earnings for some Rio de Janeiro municipalities, Brazil. We used CCR and BCC classical Data Envelopment Analysis (DEA) models, with one input (per capita energy use) and two outputs (average temperature and average monthly earnings). The results indicate that municipalities with higher GDP values have lower efficiency. When discussing the results, we present possible reasons for this fact.     

The effect of electro-thermal parameters on IGBT junction temperature with the aging of module

This paper presents the effect of the change of electro-thermal parameters on IGBT junction temperature with module aging. Five IGBT modules are subjected to advance power thermal cycling, and IGBT I–V characterization, switching loss, and transient thermal impedance curve are measured every 1000 power thermal cycles. Then, electro-thermal models of IGBT module under power thermal cycles were built by change electro-thermal parameters, and the influence of various parameters of the electro-thermal model on the junction temperature was researched respectively. Experimental results demonstrate that IGBT collector-emitter voltage, switching loss and thermal resistance increase more quickly with the aging process of module. Simulation results indicate that the variations of electro-thermal parameters have crucial influences on the IGBT junction temperature. After 6000 power thermal cycles, the IGBT steady state junction temperature mean and variation are increased 1.97 K and 0.1656 K over its initial value, respectively. The relative temperature rise is 38.10% and relative temperature variation is 15.08% after 6000 power thermal cycles. The rise in switching loss increases both the steady state junction temperature mean and variation. The change of thermal impedance has great influence on the steady state junction temperature mean, but has little effect on steady state junction temperature variation.     

高空飞行器供油驱动系统IGBT模块结温特性研究

对高空飞行器供油驱动系统在特定负载状态下的IGBT模块结温特性进行研究。高空飞行器对供油驱动系统的高功率密度要求高及环境散热条件差的状况,使得其关键部件IGBT模块在功率裕量与结温控制方面更为严格。根据负载特性精确计算结温,对于在特定散热条件下系统的可靠运行非常重要。运用非稳态导热的Foster集总参数法,分析IGBT模块点热源特性及其他热源对计算影响,建立一种含校正系数的热网络模型,并在短时脉冲过载及输出低频两种特有状态下,对IGBT模块的结温特性进行分析。通过对高空飞行器飞行过程中IGBT模块结温特性的计算,结合仿真软件Semisel的对比分析,验证了建模和分析本文所提方法的有效性。     

Effect of collector voltage and collector current on junction temperature

Experiments have been carried out on the 2N929 transistor to investigate the effect of collector voltage and collector current on junction temperature. The results indicate that at constant power dissipation increasing the collector voltage will increase the junction temperature and give the apparent effect of a higher thermal resistance.     

A study on IGBT junction temperature (Tj) online estimation using gate-emitter voltage (Vge) at turn-off

A novel method is presented for online estimation of the junction temperature (Tj) of semiconductor chips in IGBT modules, based on evaluating the gate-emitter voltage (Vge) during the IGBT switch off process. It is shown that the Miller plateau width (in the Vge waveform) depend linearly on the junction temperature of the IGBT chips. Hence, a method can be proposed for estimating the junction temperature even during converter operation – without the need of additional thermal sensors or complex Rth network models. A measurement circuit was implemented at gate level to measure the involved time duration and its functionality was demonstrated for different types of IGBT modules. A model has been proposed to extract Tj from Vge measurements. Finally, an IGBT module with semiconductor chips at two different temperatures has been measured using Vge method and this method was found to provide the average junction temperature of all the semiconductor chips.     

Experimental and numerical approach on junction temperature of high-power LED

The understanding of thermal resistance and junction temperature is important in the area of designing efficient, long-lasting high-power Light Emitting Diodes (LEDs) and diode stacks. This paper developed a systematic evaluating program for investigating the effect of location and thickness on the thermal resistance and junction temperature of LED on an aluminum substrate. Structure function measurements were implemented by Thermal Transient Tester (T3ster) and Integrating Sphere on LED placed on an aluminum plate. The temperature distribution of LED was analyzed to understand the relationship between thermal resistance and location of the LED on the aluminum base. Meantime, to evaluate the validity of the test, the simulation is developed by considering structure properties. The simulation curve basically has a similarity with the experimental curve in the overall. It implies that the evaluating method can provide guidance in understanding thermal reliability of LED lamps and designing thermal management techniques.     

Novel buffer engineering: A concept for fast switching and low loss operation of planar IGBT

For the first time, an insulated gate bipolar transistor with a novel buffer is proposed and verified by two-dimensional (2D) mixed device-circuit simulations. The structure of the proposed device is almost identical with that of the conventional IGBT, except for the buffer layer which is formed by employing a three-step, gradually changing doping n⁺ structure. Compared with the conventional IGBT, the proposed device exhibits better trade-off relation between the conduction and switching losses. The turn-off time is halved from 9.4 μs of the conventional IGBT to 4.5 μs of the proposed device, so the operation speed of the proposed device is greatly improved. Further, the forward blocking voltage is enormously increased from 907 V of the proposed device to 1278 V of the proposed device, which is required for high power operation.     

New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions

A novel technique is presented, which uses dI_ce/dt and the transconductance as a thermo-sensitive parameter for the measurement of the static and of the transient average junction temperature in IGBT devices. The paper describes the physics of the signal generation, provides the experimental setup, and discusses the accuracy and the suitability of the technique under operating conditions of the devices.     

新能源接入对继电保护及安自装置的影响浅析

随着我国时代发展和经济繁荣,电网的未来趋势已经走向智能电网,但同时世界的能源危机问题也越来越严峻,而风电、光伏等新型能源作为电源网络的重要组成部分,获得了大力开发和广泛应用.需要注意的是,新能源大规模的接入已经改变了我国传统电力系统运行过程产生的特征,对我国传统的继电保护及安自装置带来更高的要求标准和挑战.本文简单分析了"新能源接入对继电保护及安自装置的影响"有关内容.     

The influence of emitter-base junction design on collectorsaturation current, ideality factor, Early voltage, and device switchingspeed of Si/SiGe HBT's

In advanced Si/SiGe HBT's the base is doped much higher than emitter and collector. Base outdiffusion becomes a problem because of the formation of parasitic barriers that degrade device performance. The simulations and experiments of this paper show that a strong correlation exists between (a) the drop of the collector saturation current, (b) an increase of its ideality factor and (c) a rise of the switching time due to an additional emitter delay which can no longer be neglected. Curves of these three parameters as a function of Si/SiGe heterointerface position and outdiffusion at the base-emitter interface have been calculated and indicate that only a few nm shift may cause severe device degradation. An important result is that the collector current ideality factor or the inverse Early voltage is a very sensitive indicator for the quality of the emitter-base interface. Application of these results have yielded experimental SiGe HBT's with transit frequencies above 60 GHz     

电涡流传感器热稳定性标定技术

介绍电涡流传感器位移测量原理,分析温度变化时传感器线圈和探头热胀冷缩在测量位移过程中造成的温度漂移现象.针对传感器的温漂,研制出具有温度补偿功能的电涡流传感器热稳定性标定装置,对传感器输出电压进行温度补偿,减小温度变化对传感器输出电压的影响.同时介绍利用该装置进行温度标定的实现方法,并进行实验验证,实现固定位移条件下环境温度变化时对电涡流传感器输出电压的标定,与无温度补偿时输出电压对比,电压变化量减小了近50%.     

A nonuniform stationary state of a magnetic junction under the conditions of switching by spin-polarized current

A stationary state of a spin-valve magnetic junction under the conditions of current-induced instability is studied. It is shown that switching is nonuniform if the switchable free-layer thickness exceeds the longitudinal spin diffusion length. The given-voltage mode is considered. The angle between the magnetization vectors of adjacent magnetic layers in the switched state is found as a function of the applied voltage. The current-voltage (I-V) characteristic of a switched junction is calculated. It is predicted that, if the relative magnetoresistance is sufficiently high, switching exhibits hysteretic behavior leading to a bistable I-V characteristic.     

高压大功率IGBT元器件开关特性的分析研究

自从IGBT器件出现之后,大量的研究人员对IGBT器件的开关特性进行了大量的研究,以便准确地预测和改善器件的开关瞬态特性.在实际应用中,IGBT器件的开关特性不仅和其物理结构、制作工艺以及工作的原理有着密切的关系,同时和其工作的环境也具有密切的关系.在IGBT器件工作的时候,常常受到驱动电压和电阻以及工作电压、集电极电流等的影响.因此研究工作环境对IGBT器件开关特性的影响,不断地改善其设计来优化其性能,成为研究的重点.论文详尽研究分析了功率器件IGBT的开关特性,对IGBT及其系统的理解、应用具有一定的指导意义.     

环境温度对中波红外成像设备MRTD的影响研究

MRTD是评价红外成像设备的重要技术参数,与设备的外场作用距离直接相关,因此常用来预测外场作用距离。一般军事装备的工作环境温度为-40℃(甚至更低)到+55℃的环境(依据应用场景会有所不同),在此温度范围内,由于目标辐射能量、探测器噪声、光学传函等发生变化,会引起MRTD的变化。而一般设备出厂时只检测室温MRTD,没有给出其他环境温度下的MRTD。针对以上问题,本文考虑环境温度对成像设备信号传递函数、噪声、调制传递函数等因素的影响,探究不同环境温度下MRTD的变化规律,建立不同环境温度下MRTD的关系,通过室温MRTD预测得到其他环境温度下的MRTD,提高不同环境温度下外场作用距离预测精度。     

Experimental study on current gain of BSIT

A means to improve the current gain hFSof the BSIT in a high drain current region has been derived from an experimental study about the dependency of the hFSversus drain current relationship on the channel width, the gate junction depth, and the impurity concentration in the n^-high-resistivity drain region. The BSIT, designed in this manner and including 9000 channels in a chip of 7 × 10 mm², exhibits a current gain over 100 and high switching speeds, a rise time of 200 ns, a storage time of 200 ns and a fall time of 25 ns at a drain current of 50 A.     

Electron microscopy and energy loss study of low temperature plasma deposited oxide on a CZ grown Si substrate

Transmission electron microscopy (TEM) and computer-controlled parallel electron energy loss spectroscopy (PEELS) are used to obtain the structure of and compositional profile across a thin oxide film deposited by remote plasma enhanced chemical vapor deposition at 300°C. The film, believed to be stoichio-metrically correct SiO₂ as determined by Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS), was found to be oxygen rich with a composition non-uniformity across it. The existence of an abundance of oxygen was supported by capacitance-voltage measurements and etch rate studies. The non-uniformity was observed in TEM images. These results show what a powerful characterization technique computer-controlled PEELS can be. In addition, this is the first time that PEELS profiling was used to help interpret TEM images.