直径为320mm的大孔径高功率碘原子激光放大器

研制成一台直径为φ820mm、长1.4m的高功率碘原子激光放大器,电能转换效率为0.8％。沿放大器的横截面上,反转粒子数密度分布不均匀性小于4％。由热引起的折射率改变量小于2×10~(-7)。实验结果表明,经验公式P·D=20000(Pa·cm)适用于放大器直径D及工作气体压力P的选择。     

异质结谷间转移电子器件在8mm波段输出320mW

<正>当能带结构不同的半导体材料组成异质结构时,体材料的周期性势场受到破坏,产生了有趣的能带混合效应。如果把直接带隙半导体同间接带隙半导体组成异质结构,那么,在适当的偏压作用下就能把某一能谷的入射电子转换成另一能谷的输出电子,产生异质结谷间转移电子效应。利用这一效应设计成新的异质结谷间转移电子器件。首先在n~+-GaAs衬底上用MBE     

Reliability comparison of 28 V–50 V GaN-on-SiC S-band and X-band technologies

This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates. The intrinsic reliability performances of the 28 V and 40 V technologies, with 400 nm and 250 nm gate length, have been characterized with DC accelerated life test (DC-ALT), for which ohmic contact inter-diffusion is the wear-out mechanism, and is accelerated by temperature and current. The intrinsic reliability performance of the 50 V technologies, with 400 nm gate length, have been characterized with RF-ALT, for which source-connected second field plate void coalescence is the wear-out mechanism which is accelerated by temperature. In spite of the differences in the accelerated test methodologies and wear-out mechanisms, all of the Wolfspeed GaN-on-SiC technologies demonstrate high and similar predicted lifetimes at their respective maximum recommended operating conditions. The reliability performance is supported with successful technology qualifications with zero failures, and volume manufacturing with a demonstrated low field failure rate.     

A novel 0.84 ppm/°C CMOS curvature-compensated bandgap with 1.2 V supply voltage

This paper proposes a novel CMOS curvature-compensated bandgap reference (BGR) by using a new full compensation technique. The theory behind the proposed full compensation technique is analyzed. The proposed BGR is designed and implemented using 0.15 μm standard CMOS process. Simulation results show that the proposed BGR achieves a temperature coefficient (TC) of 0.84 ppm/°C over the temperature range from −40 °C to 120 °C with a 1.2 V supply voltage. The current consumption of proposed BGR is 51 μA at 27 °C. The line regulation of proposed BGR is 0.023%/V over the supply voltage range from 1.2 V to 1.8 V at 27 °C. In addition, the PSRRs of proposed BGR are −91 dB, −81 dB, −61 dB and −29 dB at DC or 10 Hz, 1 kHz, 10 kHz, and 100 kHz, respectively.     

Improving ESD protection of 5 V NMOSFET large array device in 0.4 μm BCD process

In the output stage of power ICs, large array devices (LAD) of MOSFETs are usually used to drive a considerable amount of current. Electrostatic discharge (ESD) self-protection capability of LAD is also required. ESD layout rules are usually adopted in low voltage CMOS transistors to improve the ESD performance but with a large layout area. In this paper, a modified RC gate-driven circuit with gate signal control circuit is developed to keep the minimum device layout rule while achieving ESD self-protection. Thus, it results in a very small layout area increment while keeps the LAD operates safely in normal operation and gains good ESD protection level.     

A 5.7–6.0 GHz CMOS PLL with low phase noise and −68 dBc reference spur

This paper presents a 5.7–6.0 GHz Phase-Locked Loop (PLL) design using a 130 nm 2P6M CMOS process. We propose to suppress reference spur through reducing the current mismatch in charge pump (CP), controlling the delay time in phase frequency detector (PFD), and using a smaller VCO gain (KVCO). With a reference frequency of 32.768 MHz, chip measurement results show that the frequency tuning range is 5.7–6.0 GHz, the reference spur is −68 dBc, the phase noise levels are −109 dBc/Hz and −135 dBc/Hz at 1 MHz and 10 MHz offset respectively for 5.835 GHz. Compared with existing designs in the literature, this work’s reference spur is improved by at least 17% and its phase noise is the lowest. Under a 1.5 V supply voltage, the power dissipation with an output buffer of the PLL is 12 mW.     

WIP320

该机采用了乳白色设计，外形与普通手机相差不大，配备了一个彩色显示屏，可以很方便地查看联系人，它还支持Skype语音服务，如SkypeOut,Skypeln和语音邮件等。     

Design and fabrication of compact 2 × 2 dual linear polarized wideband and high gain array for Ku-band satellite communication application

In this paper, the design of a planar array antenna for two-way satellite communication is presented. The antenna unit consists of four elements and two waveguide feeding networks used to connect the elements. The radiating elements are small horn apertures. Each element of the array includes two separate ports to radiate vertical and horizontal polarization, respectively. The feeding networks consist of power dividers and bends to connect the vertical and horizontal polarization ports of horns, separately. Radiating elements and feeding networks are designed to cover receive band (10.5–12.75 GHz) and transmit band (13.75–14.5 GHz) within Ku-band. The maximum gain for this type of antenna is 21 dBi.     

索爱K320

作为索爱第一款支持自动蓝牙匹配功能的手机，索爱K320主要提升了蓝牙应用的方便程度。手机在接驳使用兼容的蓝牙附件产品（比如蓝牙耳机）的过程中，即便是第一次进行两个设备的连接也不用输入密码。从而让那些第一次使用蓝牙功能的用户也能够轻松完成配对使用的过程。除此之外，这款手机还可以非常简便地在手机与PC之间进行数据传输。同时除了蓝牙以外，还提供了红外以及USB数据传输方式的支持，并具备MP3播放，1000个联系人存储以及Push E-mail等应用功能。     

基于TMS320DM320的移动数字电视设计

介绍了基于T-DMB标准和TI数字多媒体芯片的移动数字电视的软、硬件设计理论和方法.仿真结果表明该方案功耗低,灵敏度高,可实时播放.     

长虹A320

石头似乎比较难与数码产品拉上关系,但长虹的A320经过精工塑造,除了拥有琥珀般的质感,还有琥珀般的灵性。以吉祥的寓意加上科技的内涵,再配上长虹的故事,就形成了长虹的“石头记”。     

联想E320

灵动联想 E320采用流行的银黑搭配,通过线条的变化勾勒出一张俊俏脸庞。整机的部件拼接紧密,滑盖过程轻快流畅,小巧的机身使用起来手感自然没得说。出于定位考虑,该机采用了128×160像素的65K     

奥林巴斯SP-320

奥林巴斯SP-320与同时发布的其他几款相机相比，该机的定位显然更高，按照官方的说法，SP-320将为“摄影师”，提供一个可操控的界面，在拍摄功能方面，除了具有25种场景模式之外，程序曝光，光圈优先，快门优先，全手动曝光等设置该机一应俱体，完全可以满足摄影师的创意要求。     

200mm、300mm和450mm晶圆及其生产线发展动态

本文介绍了200mm、300mm和450mm晶圆及其生产线的发展动态，并讨论了我国300mm晶圆生产线的现状和发展趋势。     

英特尔Ф200mm变身Ф300mm厂

半导体巨擘英特尔（Intel）日前表示，该公司斥资20亿美元升级亚利桑那州Ф300mm厂Fab 12，即将正式启用，未来该厂将主力生产双核心和单核心处理器。值得一提的是，Fab 12不但为英特尔首座旧有Ф200mm厂转型Ф300mm厂的成功案例，也将是英特尔旗下第三座导入先进65nm工艺的晶圆厂。     

200mm×200mm OLED步进投影曝光机

有机发光二极管(OLED)尤其是AMOLED由于其独特的性能,其可能成为下一代显示技术。目前AMOLED显示还未达到量产之前,200 mm×200 mm的研发线对于AMOLED技术工艺验证尤为重要。AMOLED对TFT曝光的要求(CD均匀性、套刻精度等)较TFT-LCD高。基于此,介绍了可用于OLED研发要求的步进投影曝光机SS B200/10A,实测数据及显示器件成功开发表明该设备能够很好地满足AMOLED工艺要求。     

安捷伦推出4mm和5mm椭圆形LED

安捷伦科技公司日前宣布，推出椭圆形辐射模式的穹形4mm(T-1)和H5mm(T-1 3／4)双孔直插超高亮度InGaN(氮化铟镓)LED产品，进一步增强了其在室外电子标志和信号灯产品市场的领先地位。这些安捷伦公司最亮的InGaN LED，其亮度与业内领先的供应商提供的产品相当，而且，由于同时具备高亮度、抗恶劣天气的封装形式及椭圆形辐射模式的特点，     

TMS320DM320视频加速引擎IMX的性能分析

移动多媒体的迅猛发展及视频压缩标准复杂度的不断提升对硬件平台提出了更高的要求。TMS320DM320是TI公司推出的多媒体处理器。内部为ARM＋DSP＋视频加速引擎IMX的新型处理器架构广泛支持主流音视频压缩标准。视频加速引擎IMX是高性能的运算加速单元，支持多种复杂解码操作。介绍了TMS320DM320，并对H，264解码器进行性能分析，提出了运算复杂模块针对IMX的优化方案，并以耗时的逆变换、逆量化与亮度分量运动补偿为例，测试并评估IMX实现H.264复杂算法的性能。经测试，使用IMX视频解码运算可以获得9倍以上的速度提升。