Me,myself and my mobile: A segmentation of youths based on their attitudes towards the mobile phone as a status instrument

The importance of the mobile phone in the life of adolescents has led observers to speak of a Mobile Youth Culture. One of the central characteristics of this youth culture is the use of the mobile phone as a means to display or enhance one’s status in the peer group. To date, however, little attention has gone out to the different uses adolescents may have for their mobile phones. Therefore, this study aims to further our understanding of the heterogeneity in adolescent mobile phone use by examining whether we can distinguish between different ‘mobile lifestyles’ within the Mobile Youth Culture. Drawing on a quantitative survey among 1943 Flemish adolescents (12–18 years), we differentiated three lifestyles based on their attitudes towards the mobile phone as a fashion article, as a display of one’s popularity and as a display of one’s time scarcity. A two-step cluster procedure based on respondents’ scores on these three mechanisms revealed three different segments: trendy users (N = 603), engaged users (N = 864) and thrifty users (N = 436). These segments showed significantly different profiles in terms of socio-demographics, their use of the mobile phone in the presentation of the Self and the mobile phone’s role in their friendship relationships.     

Can smartphones be specialists? Effects of specialization in mobile advertising

Based on the Computers Are Social Actors (CASA) paradigm, this study extends the expectations regarding the superiority of specialists over generalists to mobile technology by examining whether the specialization of a hardware agent (i.e., a smartphone) and a software agent (i.e., an application) has psychological effects on smartphone users who are exposed to mobile advertisements. Results from a between-subjects experiment (N = 80) show that specialist smartphones and applications induce greater trust in advertisements and an increased purchase intention toward the advertised products than generalist smartphones and applications. In addition, the effects of specialization on purchase intention are mediated by trust in advertisements. Theoretical and practical implications of these findings are discussed.     

Synthesis,size-dependent optoelectronic and charge transport properties of thieno(bis)imide end-substituted molecular semiconductors

The synthesis of two new thieno(bis)imide (TBI, N) end functionalized oligothiophene semiconductors is reported. In particular, trimer (NT3N) and pentamer (NT5N) have been synthesized and characterized. Two different synthetic approaches for their preparation were tested and compared namely conventional Stille cross coupling and direct arylation reaction via C–H activation. Theoretical calculations, optical and electrochemical characterization allowed us to assess the role of the π-conjugation extent, i.e., of the oligomer size on the optoelectronic properties of these materials. In both TBI ended compounds, due to the strong localization of the LUMO orbital on the TBI unit, the LUMO energy is almost insensitive to the oligomer size, this being crucial for the fine-tailoring of the energy and the distribution of the frontier orbitals. Surprisingly, despite its short size and contrarily to comparable TBI-free analogues, NT3N shows electron charge transport with mobility up to μ_N = 10⁻⁴ cm² V⁻¹ s⁻¹, while increasing the oligomer size to NT5N promotes ambipolar behavior and electroluminescence properties with mobility up to μ_N = 0.14 cm² V⁻¹ s⁻¹ and to μ_P = 10⁻⁵ cm² V⁻¹ s⁻¹.     

Why do people access news with mobile devices? Exploring the role of suitability perception and motives on mobile news use

Using self-reported survey data (N = 281), the present study explores the structural relationships among mobile users’ perceptions of the suitability of two types of mobile news (political feature news and entertainment news), users’ motivations for mobile news usage, and their behavioral patterns. Our findings show that two types of perceived suitability for mobile news, particularly for political feature news, are strongly associated with all dimensions of motivations for mobile news usage. Furthermore, as predicted, our findings show that the information-seeking motive is the very factor that determines mobile news usage. The results also reveal that the accessibility motive mediates the relationship between the perceived suitability of obtaining news via a mobile device and users’ mobile news behavior. However, contrary to our expectation, the social utility motive does not mediate the relationship between users’ perceptions of the suitability of mobile devices for this purpose and their mobile news usage. Finally, the information-seeking and accessibility motives each have an indirect effect on the association between perceived suitability and mobile news usage. The implications of the study and recommendations for future research are also discussed.     

Would you share? Predicting the potential use of a new technology

In this paper, we describe the case of wireless grids, an emerging technology that enables ad hoc sharing of resources (such as screen, signal and microphone) on edge devices (such as PDA’s, laptops and mobile phones). We look at the circumstances under which people are willing to share the resources on their edge devices using a technology with which they are not yet familiar. We collected data among students from a University in the North-Eastern USA (N = 284) through a policy capturing design (also known as factorial design or conjoint measurement), and analyzed the information via multilevel regression analysis. This approach allowed us to explore factors that explain the use of emerging peer-to-peer technologies among consumers as well as context-related characteristics. Context-related characteristics, in particular trust in communication partners, explain the willingness to share and, consequently, the use of wireless grids.     

Hydrogen passivation effects under negative bias temperature instability stress in metal/silicon-oxide/silicon-nitride/silicon-oxide/silicon capacitors for flash memories

The paper presents the passivation effect of post-annealing gases on the negative bias temperature instability of metal/silicon-oxide/silicon-nitride/silicon-oxide/silicon (MONOS) capacitors. MONOS samples annealed at 850 °C for 30 s by a rapid thermal annealing (RTA) are treated by additional annealing in a furnace, using annealing gases N₂ and N₂-H₂ (2% hydrogen and 98% nitrogen gas mixture) at 450 °C for 30 min. MONOS samples annealed in an N₂-H₂ environment are found to have lowest oxide trap charge density shift, ΔN_ot = 8.56 × 10¹¹ cm⁻², and the lowest interface-trap density increase, ΔN_it = 4.49 × 10¹¹ cm⁻² among the three samples as-deposited, annealed in N₂ and N₂-H₂ environments. It has also been confirmed that the same MONOS samples have the lowest interface-trap density, D_it = 0.834 × 10¹¹ eV⁻¹ cm⁻², using small pulse deep level transient spectroscopy. These results indicate that the density of interface traps between the silicon substrate and the tunneling oxide layer are significantly reduced by the additional furnace annealing in the N₂-H₂ environment after the RTA.     

Texting versus talking: An exploration in telecommunication language

Prior research on text messaging has focused on its elliptical nature (e.g., acronyms, etc.). In contrast, the purpose of this research was to conduct an investigation of the type of words that tend to occur in text messages. Participants (N = 224) retrieved their most recent text messages which were then analyzed with the Linguistic Inquiry and Word Count (LIWC) program (  and ) and compared with parallel analyses of randomly selected telephone conversations (N = 214). The results indicated numerous linguistic differences between text messages and telephone conversations. The former were linguistically simpler, more personal and more affective than the latter. Overall, the results further our understanding of the linguistic dimensions of this relatively new form of communication.     

The interface states analysis of the MIS structure as a function of frequency

The energy distribution of interface states (N_ss) and their relaxation time (τ) were of the fabricated the Al/SiO₂/p-Si (MIS) structures were calculated using the forward bias current-voltage (I-V), capacitance-frequency (C-f) and conductance-frequency (G-f) measurements. Typical ln[I/(1 − exp(−qV/kT)] versus V characteristics of MIS structure under forward bias show one linear region. From this region, the slope and the intercept of this plot on the current axis allow to determine the ideality factor (n), the barrier height (Φ_b) and the saturation current (I_S) evaluated to 1.32, 0.77 eV and 3.05 × 10⁻⁹ A, respectively. The diode shows non-ideal I-V behaviour with ideality factor greater than unity. This behaviour is attributed to the interfacial insulator layer at metal-semiconductor interface, the interface states and barrier inhomogeneity of the device. The energy distribution of interface states (N_ss) and their relaxation time (τ) have been determined in the energy range from (0.37 − E_v) to (0.57 − E_v) eV. It has been seen that the N_ss has almost an exponential rise with bias from the mid gap toward the top of valance band. In contrary to the N_ss, the relaxation time (τ) shows a slow exponential rise with bias from the top of the E_v towards the mid gap energy of semiconductor. The values of N_ss and τ change from 6.91 × 10¹³ to 9.92 × 10¹³ eV⁻¹ cm⁻² and 6.31 × 10⁻⁴ to 0.63 × 10⁻⁴ s, respectively.     

Design of a wideband multi-standard antenna switch for wireless communication devices

A wideband Low Power Single Pole 6-Throw (SP6T) antenna switch has been designed for GSM/DCS/802.11b mobile standards using a newly improved architecture and fabricated using a pseudomorphic depletion mode 0.18 μm HEMT GaAs process. The switch exhibits less than 1 dB insertion loss and isolation performances from up to 53 dB at 0.8 GHz down to 42 dB at 2.5 GHz. The circuit DC power consumption is less than 500 μW in full power transmission condition and makes it suitable for use in mobile terminals like mobile phones or PDAs. The paper presents simulation results validated by experimental measurements on an IC prototype.     

Effect of a policy intervention on handset subsidies on the intention to change handsets and households’ expenses in mobile telecommunications

This study examined effect of a policy intervention that provides an upper limit for handset subsidies on users’ intention to change handset and households’ expenses on mobile telecommunications. The Korean government has prohibited mobile network providers from providing excessive subsidies for mobile handsets to attract subscribers since Nov. 2014 according to the mobile act. Using the exogenous variation, we estimate the impact of the policy on the intention to change handsets and expenses on handset installment, total mobile communications, and online content. The longitudinal data are from the 2014 to 2015 waves of the Korea Media Panel Survey. The mobile act lowered the predicted probability of switching handsets by 0.4% points. Moreover, the mobile act increased the predicted probability of any expense on handset installment by 7.5% points and had a significant impact on the amount of expenses on handset installment, with an increase of 7.8%. The mobile act lowered users’ willingness to switch handsets and increased spending on handset installment. This increased burden in handset installment might shrink the online content market, which has a large need for government support, as well as decrease consumers’ welfare. We assert that the policy intervention on handset subsidies is questionable with regard to both consumer welfare and the healthiness of the ICT ecosystem.     

Enhanced performance of dye-sensitized solar cells with novel 2,6-diphenyl-4H-pyranylidene dyes

Novel 2,6-diphenyl-4H-pyranylidene derivatives were designed and synthesized as dyes for dye-sensitized solar cells (DSSC). Dyes 2a, b with a phenyl substituent showed high DSSC energy conversion efficiencies of 5.3% (J_sc = 10.3 mA/cm², V_oc = 0.72 V, FF = 0.72) and 4.7% (J_sc = 8.9 mA/cm², V_oc = 0.73 V, FF = 0.72) at 100 mW/cm² under simulated AM 1.5 G solar light conditions. These values are twice better than that of dye 1 without the phenyl substituent under the same conditions. Both the photocurrent density (J_sc) and open circuit voltage (V_oc) of DSSCs based on dyes 2a, b are increased compared with 1. It can be attributed to their twisted structures, absorption abilities and proper energy levels. This result shows that the tetraphenylpyranylidene is a promising electron-donor unit for high-efficiency DSSCs.     

Effect of axial halogen substitution on the performance of subphthalocyanine based organic photovoltaic cells

To probe the influence of molecular dipole on the open circuit voltage (V_OC) of molecular heterojunction organic solar cells, we study axially fluorinated boron subphthalocyanine/fullerene (SubPc-F/C₆₀) junctions. These exhibit an open-circuit voltage V_OC = 1.00 V, a value closer to the HOMO–LUMO offset at the donor–acceptor interface = 1.69 eV than the V_OC = 1.06 V measured for junctions between the archetypal chlorinated SubPc and C₆₀, with corresponding HOMO–LUMO offset = 1.84 eV. Aside from the axial halogen substitution, the two compounds exhibit similar molecular structure and optical absorption. The energy levels and structure of the heteromolecular polaron pair are calculated, and the ideal organic diode model for SubPc-Cl is modified accordingly, successfully reproducing the experimental SubPc-F device characteristics. The reproducible difference in V_OC is attributed to the different electric dipole strength between SubPc-F and SubPc-Cl and its influence on polaron pair dynamics at the heterojunction.     

Study of electrical and optical properties of CNx thin films deposited by reactive magnetron sputtering

The study concerns the CN_x thin films deposited by Low Pressure Hot Target Reactive Magnetron Sputtering (LP-HTRMS). The thin film resistance changes with relative humidity (RH) and optical properties have been studied in the range of 300-653 K. The temperature coefficients of resistivity changes were −2.5%/K at 300 K and −0.5%/K at 500 K. The activation energy of conductivity E_ρ was found to be 0.21 eV in the case of unannealed sample and 0.44 eV when the sample was annealed at 653 K. The CN_x thin films fastness to light was tested in the range of 200-2500 nm by measuring their transmittance. The calculations of absorption carrying out with Tauc formula proved the dominance of indirect optical transitions with Eg energy of 1.04 eV and direct transitions of Eg 2.05 eV. The UV radiation was fully absorbed and light transmission was ca. 90% in the range from visible radiation to far infrared of 1000-2500 nm. The CN_x thin films showed the high resistance sensitivity to RH changes. At T = 300 K resistance changed from 882 M Ω for 36% RH to 386 k Ω for 85% RH. The CN_x thin films susceptibility to humidity was observed in case of both DC and AC current (100 Hz to 10 kHz) measurements. The Si₃N₄ or SiC buffer adhesive layer was incorporated between CN_x film and substrate and its influence on CN_x electrical properties was observed.     

Dielectric spectroscopy studies on (PVP + PVA) polyblend film

The thermal behavior of (PVP + PVA) polyblend film have been examined using differential scanning calorimetry and scanning electron microscopy. Capacitance and loss tangent values of polyvinyl pyrrolidone (PVP) + polyvinyl alcohol (PVA) polyblend film were measured in the frequency range 1-100 kHz and temperature range 298-423 K. Dielectric permittivity of real part (ε′) was obtained from capacitance data and dielectric permittivity of imaginary part (ε″) was obtained from real part of dielectric permittivity and loss tangent values. The decrease in dielectric permittivity was observed with increasing frequency and also observed increase in dielectric permittivity with increasing temperature. The complex dielectric constant (ε*) has been described by the electric modulus M* = (1/ε*) = M′ + iM″. The data of M* has been analysed by the stretched exponential decay of the electric field, Φ(t) = exp−(t/τ₀)^β.     

Cubic GaN/AlGaN Schottky-barrier devices on 3C-SiC substrates

In this work, we focus on the fabrication of cubic GaN based Schottky-barrier devices (SBDs) and measured current voltage (I-V) characteristics and the critical field for electronic breakdown. Phase-pure cubic GaN and c-Al_xGa_1 − xN/GaN structures were grown by plasma assisted molecular beam epitaxy (MBE) on 200 μm thick free-standing 3C-SiC (1 0 0) substrates, which were produced by HOYA Advanced Semiconductor Technologies Co., Ltd. The thickness of the c-GaN and c-Al_0.3Ga_0.7N epilayers were about 600 and 30 nm, respectively. Ni/In Schottky contacts 300 μm in diameter were produced on c-GaN and c-Al_0.3Ga_0.7N/GaN structures by thermal evaporation using contact lithography. A clear rectifying behavior was measured in our SBDs and the I-V behavior was analyzed in detail, indicating the formation of a thin surface barrier at the Ni-GaN interface. Annealing of the Ni Schottky contacts in air at 200 °C reduces the leakage current by three orders of magnitude. The doping density dependence of breakdown voltages derived from the reverse breakdown voltage characteristics of c-GaN SBDs is investigated. The experimental values of breakdown voltage in c-GaN are in good agreement with theoretical values and show the same dependence on doping level as in hexagonal GaN. From our experimental data, we extrapolate a blocking voltage of 600 V in c-GaN films with a doping level N_D = 5 × 10¹⁵ cm⁻³.     

On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/p-Si (MIS) Schottky diodes

The energy distribution profile of the interface states (N_ss) and their relaxation time (τ) and capture cross section (σ_p) of metal-insulator-semiconductor (Al/SiO₂/p-Si) Schottky diodes have been investigated by using the high-low frequency capacitance and conductance methods. The capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of these devices were investigated by considering series resistance (R_s) effects in a wide frequency range (5 kHz-1 MHz.). It is shown that the capacitance of the Al/SiO₂/p-Si Schottky diode decreases with increasing frequency. The increase in capacitance especially at low frequencies results form the presence of interface states at Si/SiO₂ interface. The energy distributions of the interface states and their relaxation time have been determined in the energy range of (0.362-E_v)-(0.512-E_v) eV by taking into account the surface potential as a function of applied bias obtained from the measurable C-V curve (500 Hz) at the lowest frequency. The values of the interface state density (N_ss) ranges from 2.34 × 10¹² to 2.91 ×  10¹² eV⁻¹/cm², and the relaxation time (τ) ranges from 1.05 × 10⁻⁶ to 1.58 × 10⁻⁴ s, showing an exponential rise with bias from the top of the valance band towards the mid-gap.     

A 1.0 V power supply, 9.3 GB/s write speed, Single-Cell Self-Boost program scheme for high performance ferroelectric NAND flash SSD

A Single-Cell Self-Boost (SCSB) program scheme is proposed to achieve a 1.0 V power supply operation in Ferroelectric (Fe-) NAND flash memories. The proposed SCSB scheme only self-boosts the channel voltage of the cell to which the program voltage V_PGM is applied in the program-inhibit NAND string. The program disturb is well suppressed at the 1.0 V power supply voltage in the proposed program scheme. The power consumption of the Fe-NAND at V_CC = 1.0 V decreases by 86% compared with the conventional floating gate (FG-) NAND at V_CC = 1.8 V without the degradation of the write speed. The number of NAND chips written simultaneously in Solid-State Drives (SSD) increases by 6.7 times and the 9.3 GB/s write throughput of the Fe-NAND SSD is achieved for an enterprise application.     

Efficient nondoped organic light-emitting diodes with Cu complex emitter

In Cu^I complex based organic light emitting diodes (OLEDs) a host matrix is traditionally thought to be required to achieve high efficiency. Herein, it is found that the device ITO/MoO₃ (1 nm)/4,4′-N,N′-dicarbazole-biphenyl (CBP, 35 nm)/[Cu(μ-I)dppb]₂ (dppb = 1,2-bis[diphenylphosphino]benzene, 20 nm)/1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi, 65 nm)/LiF (1 nm)/Al (100 nm) with a vacuum thermal evaporated nondoped Cu^I complex emissive layer (EML) showed external quantum efficiency and current efficiency of 8.0% and 24.3 cd/A at a brightness of 100 cd/m², respectively, which are comparable to the maximum efficiencies reported in an optimized doped OLED with the same emitter, higher efficiency than the OLED with a [Cu(μ-I)dppb]₂:CBP EML, and much higher efficiencies than the nondoped OLED with a bis(2-phenylpyridine)(acetylacetonate)iridium [Ir(ppy)₂(acac)] EML. A series of reference films and single carrier devices were fabricated and studied to understand the difference between Cu^I and Ir^III complex based nondoped OLEDs.     

Internet experience and time displacement of traditional news media use: An application of the theory of the niche

The purpose of this study is to better understand the impact of online news use on traditional news media use by analyzing how Internet experience affects the time on traditional news media consumption. Based on the theory of the niche and the uses and gratifications theory, this study investigates the displacement effect of the Internet on consumer time spent on traditional media. Data were collected in a mail survey with 688 respondents in Northwest Ohio and college students in a Northwest Ohio state university from October to December, 2009. The results indicate that the Internet indeed has a displacement effect on traditional media in the daily news domain and the effect takes place most prominently after 5 years of experience. Consumers’ time spent on traditional media decreases as the years of Internet experience increases with diminishing returns. Among experienced Internet users, there was an increasing overlap between the Internet and traditional media, and they perceived the Internet as superior to traditional media.     

Effect of dimensional parameters on the current of MSM photodetector

In this work, we present the influence of dimensional parameters on dark current and photocurrent of the metal-semiconductor-metal photodetector (MSM). MSM photodetectors of different sizes have been fabricated on GaAs (NID). The active area of MSM samples varies between 1×1 μm² and 10×10 μm² with equal electrodes spacing and finger widths (l=D) varying between 0.2 and 1 μm. The I(V) characterization in inverse and direct polarization in darkness shows good symmetry of curves, which shows the good performance of components and successful fulfillment of the Schottky contacts. The application of laser fiber of incident light power of 16 mW at wavelength of 850 nm for the illumination of the MSM photodetectors showed the evolution of the photocurrent ranging from 0.75 to 1.81 mA, respectively, for 1 to 0.2 μm electrodes spacing at 3 V and active area S=3×3 μm². We showed also that variation ranging from 0.45 to 2.5 mA, respectively, for S=1×1 μm² to S=10×10 μm² at 3 V and 0.3 μm electrodes spacing. The resistance of MSM photodetectors obtained evolved proportionally to the electrodes spacing (0.87 kΩ for D=0.2 μm and 2.27 kΩ for D=1 μm with S=3×3 μm²) and inversely proportional to the surface area (2.02 kΩ for S=1×1 μm², and 0.56 kΩ for S=10×10 μm² with 0.3 μm inter electrodes spacing).