Pairing Symmetry,Spin Gap,and More in HTSC Cuprates

This work is based on the double correlated linear aggregations of holes in checkerboard geometry. It is proved that the pairing function symmetry is ?d _{x2 ? y2}, as been observed experimentally. It is also shown that there is a “superconductive spin gap” for the observation of the magnetic incommensurate modulation peaks, in agreement with the experiment. In addition, the unperturbed Hamiltonian and its related propagator are reanalyzed and modified.     

Electronic and Phonon Contributions to the Pairing in the Cuprates

Thermal Difference Reflectance (TDR) Spectroscopy has been used to determinethe superconducting gap parameter for several of the superconducting cupratesover a wide range of energies, extending from the infrared (0.3 eV)to the ultraviolet (5.3 eV). A contribution to the pairing is found in eachcase from the phonons, and from an electronic excitation with energy thatranges from 1.6 eV and 2.3 eV for the different compounds attributed to thed ⁹–d ¹⁰ L charge-transfer excitation between Cu and O. In every case thereflectance ratio between the superconducting and normal state, Rs/Rnplotted as a function of photon energy can be well described using theEliashberg theory. The theory also predicted a characteristic shape for thelow energy part of such spectra due to the phonons. We report theobservation of this feature in measurements on films of Tl₂Ba₂CaCu₂O₈. Wediscuss the significance of the success of the Eliashberg theory inexplaining these results and successfully predicting new effects in thelight of the correlations that had been thought to invalidate such atheoretical approach.     

宽束冷阴极离子源离子能量及能量分布的研究

介绍了一种用于离子束辅助沉积光学薄膜的新型宽束冷阴极离子源,详细叙述了该源的结构和工作过程.采用五栅网离子能量测试装置研究了离子源的离子能量及能量分布.结果表明,探针接收的离子最低能量随着引出电压和真空度的升高而升高.离子能量分布概率密度函数为单峰函数,其峰值位置随着真空度的降低向低能量方向移动,随着引出电压的升高向高能量方向移动.当引出电压为200～1200V时,离子平均能量为600～1600eV,呈线性规律变化.这种离子源的离子平均初始动能约为430～480eV.了解和掌握离子源的这些特性和参数,可以有效的对镀膜过程的微观环境(离子密度、离子能量等)进行控制,促进薄膜制备工艺更好地进行.     

Ordered SrTiO3 Nanoripples Induced by Focused Ion Beam

Nano-Micro Letters - Ordered nanoripples on the niobium-doped SrTiO3 surfaces were fabricated through focused ion beam bombardment. The surface morphology of the SrTiO3 nanoripples was...     

一种氧离子注入诱生缺陷的TEM表征

在利用氧离子注入工艺制备SOI材料的过程中,发现了一种"纳米网状"的结构缺陷.利用透射电镜、选区电子衍射和能谱分析对该缺陷进行了研究.结果表明,该缺陷呈网状,化学成分为硅和氧.初步研究认为,氧离子注入硅中所产生的穿通位错是形成该类缺陷的主要原因.     

离子注入对钛酸铅膜结构的影响

我们用Sol-Gel法制备了非晶钛酸铅膜。研究了各种温度下离子注入对其结构的影响。发现注入温度较低时,铅在非晶钛酸铅膜中聚集并结晶;当注入温度较高时,离子注入阻碍晶态钛酸铅的形成而使膜中出现晶态铅和氧化铅。     

Plasmon Modes Induced by Anisotropic Gap Opening in Au@Cu2O Nanorods

Integration of semiconductors with noble metals to form heteronanostructures can give rise to many interesting plasmonic and electronic properties. A number of such heteronanostructures have been demonstrated comprising noble metals and n‐type semiconductors, such as TiO₂, ZnO, SnO₂, Fe₃O₄, and CuO. In contrast, reports on heteronanostructures made of noble metals and p‐type semiconductors are scarce. Cu₂O is an unintentional p‐type semiconductor with unique properties. Here, the uniform coating of Cu₂O on two types of Au nanorods and systematic studies of the plasmonic properties of the resultant core–shell heteronanostructures are reported. One type of Au nanorods is prepared by seed‐mediated growth, and the other is obtained by oxidation of the as‐prepared Au nanorods. The (Au nanorod)@Cu₂O nanostructures produced from the as‐prepared nanorods exhibit two transverse plasmon peaks, whereas those derived from the oxidized nanorods display only one transverse plasmon peak. Through electrodynamic simulations the additional transverse plasmon peak is found to originate from a discontinuous gap formed at the side of the as‐prepared nanorods. The existence of the gap is verified and its formation mechanism is unraveled with additional experiments. The results will be useful for designing metal–semiconductor heteronanostructures with desired plasmonic properties and therefore also for exploring plasmon‐enhanced applications in photocatalysis, solar‐energy harvesting, and biotechnologies.     

Optical Energy Gap and Below Gap Optical Absorption of Fullerene Films Measured by the Constant Photocurrent Method and Photothermal Deflection Spectroscopy

The CPM spectra of fullerene films was measured to obtain the below gap absorption. The optical energy gap E_o was obtained by using the Tauc's plots. E_o did not change greatly with intercalated impurities. The absorption due to intercalated impurities was found below 1.6eV.     

Superconductivity of the Induced Pairing Model in the Presence of Diagonal Disorder

We analyze the influence of randomness of local pair (LP) site energies on the superconducting properties of a mixture of coexisting local pairs and itinerant electrons coupled via charge exchange mechanism. It has been found that the diagonal disorder effects depend in a crucial way on the total particle concentration n and the LP level position ₀. Depending on the parameters, the system can exhibit various types of superconducting behaviors, including the LP-like, intermediate (MIXED), and the BCS-like.     

低能离子注入对聚苯胺薄膜的改性研究

利用低能量的N 对电化学合成的聚苯胺薄膜进行了离子注入改性 ,实验结果表明 :聚苯胺薄膜经N 注入后薄膜电导率随注入能量和剂量的增加而提高 ,电导率最大提高了 9个数量级 ,即由本征态的电导率 (>1× 1 0 -12 S/cm)提高到 1 76× 1 0 -3 S/cm(注入剂量 :3× 1 0 17ions/cm2 ,注入能量 :35keV) ;同时离子注入后聚苯胺薄膜在可见光范围的吸收比增强。     

离子束轰击诱导硅表面纳米结构和铁纳米条纹

研究了氩离子束轰击诱导硅表面自组装纳米结构和铁纳米条纹的形成规律.在单晶Si(100)表面水平放置直径为2mm的铁棒,采用3 keV氩离子束垂直轰击硅样品表面.扫描电镜观察表明:在金属铁棒周围由近及远,硅表面形成纳米条纹和纳米点阵,纳米条纹向纳米点阵的过渡形貌为链状纳米椭圆结构;并在铁棒区域自组装出金属铁纳米条纹.通过阻尼Kuramoto-Sivashinsky方程对离子束作用下固体表面纳米结构的形成机理进行了合理的诠释与讨论.     

重离子激发解吸测试装置设计与调试

束流与真空管壁碰撞后从腔体表面解吸出一定数量的分子和离子, 解吸出的粒子使加速器系统的真空度下降, 进而会影响束流的寿命。在重离子加速器中, 为了降低动态真空对束流的影响, 需找出一种低解吸率材料作为准直器镀膜材料。因此, 不同材料的解吸率测量已成为重离子加速器真空系统设计的关键所在。本文首先介绍了基于中科院近代物理研究所320 k V高电荷态离子综合研究实验平台设计的解吸率测量装置, 并利用Molflow+真空分析软件计算了该测试装置的静态真空分布。其次以无氧铜为测试靶材进行了解吸率实验研究, 得出了束流轰击靶材时动态真空变化的趋势, 同时计算了无氧铜在不同能量和不同流强Xe¹⁰⁺和O⁺束流作用下的解吸率和相对应的电子能损。结果表明粒子解吸引起的动态真空变化较明显, 无氧铜解吸率随着入射束流能量的增加而增加, 而且在长时间束流作用时会出现束流清洗效应, 即解吸出的粒子在束流长时间轰击下逐渐减少。电子能损的平方和解吸率成正比例关系, 与相关文献的结论一致, 说明实验装置运行稳定, 获得的数据具有一定的参考意义。     

Doping Dependence of Superconducting Energy Gap of NCCO Observed by Tunneling Spectroscopy

In order to clarify the electron-hole symmetry in cuprates, Nd_2–x Ce _x CuO₄ (NCCO) thin films were fabricated for various Ce concentrations and conductance spectra were measured by tunneling spectroscopy. Since the superconductivity appears even at x=0.095, thin film samples have an advantage over single crystals for studying the electronic states in underdoped region. It is shown that the amplitude of superconducting energy gap was almost 7–11 meV in the whole superconducting range. Comparing with hole-doped cases, the energy gap of NCCO is relatively insensitive to the doping concentration.     

动态离子束混合制备的钛氧化物薄膜的AES和XPS研究

分别采用O 和Ar 离子束轰击的动态离子束混合技术,在不锈钢基体上制备钛的氧化物薄膜。经X射线光电子能谱(XPS)和俄歇电子能谱(AES)分析,研究这两种工艺制备薄膜的化学组成和价键状态。结果表明,采用动态离子束混合技术制备的薄膜,可形成与基体有组分梯度的界面过渡层,减小了薄膜内应力,同时薄膜与基体具有较好的热学相容性,从而提高了薄膜的附着性能。Ar 束轰击的动态离子束混合沉积钛的氧化物薄膜中,Ti主要以 4价存在,而O 束轰击的动态离子束混合沉积形成的钛氧化物薄膜中含有次价态的钛氧化物。     

强流脉冲离子束轰击对钛合金表面的损伤研究

为了研究强流脉冲离子束(IPIB)辐照在钛合金表面造成的损伤效应,利用IPIB在低、中、高三种能流密度下对钛合金表面进行了轰击。通过金相显微镜和扫描电子显微镜对离子束诱发的表面形貌进行了分析。结果表明,当能量密度为1.44 J/cm2时,5次脉冲轰击,靶材表面开始形成大量的熔坑。能量密度为4.5 J/cm2,10次脉冲辐照,表面出现大量较深的微裂纹,其形态分布与材料本身的缺陷密切相关。IPIB轰击能够诱发表层强烈的塑性变形;多次脉冲轰击,变形区域表面形成分布均匀,尺寸约为1μm的微孔洞形貌。微孔洞成分的线扫描结果显示,孔洞内部C,O和Si等杂质轻元素含量发生改变,β相稳定元素Mo含量基本保持不变。     

Superconducting Energy Gap Features of FeSe Investigated by Tunneling Spectroscopy on Planar Junctions

Planar tunneling junctions of the presumably unconventional superconductor FeSe were prepared and investigated. The junctions consisted of rf-sputtered FeSe/AlO _x /Ag multilayers patterned lithographically into mesa structures. Bias voltage-dependent differential conductivities dI/dV(V) of junctions in the tunneling, intermediate barrier strength, and metallic regimes were investigated. Depending on the barrier type between two to four features of the conductivity were obtained, which are discussed in the framework of multiple superconducting energy gaps. Specifically, we reproduced with all barrier types two established energy gaps and identified another feature as presumably originating from an additional large superconducting gap. A further conductivity feature could be associated with a resonant state.     

有机电致发光材料的能隙计算

有机电致发光材料具有可进行分子结构设计而改变其溶解性及光电性能等特点,以此为功能层、将电能转换为光能的有机电致发光二极管更是具备轻薄、高效、自发光、低能耗以及低成本可实现柔性器件等潜在优势。因此,研究合成高性能的有机电致发光材料并应用于制备可实用化的显示器及照明产品成了业界研究的热点。文中综述了以能带理论为基础,对有机电致发光材料进行结构设计改进发光性能时对将合成的材料的能隙计算的理论模型与计算方法及其应用进展,可望为聚合物发光材料的合成设计提供理论支持。