Optical,Structural, and Photocarrier Studies of Cu<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>(CdTe)<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript>O<Subscript><Emphasis Type="Italic">z</Emphasis></Subscript> Thin Films

In this research quaternary alloy thin films made of Cu, CdTe, and O have been grown and characterized. The samples used in this investigation were grown simultaneously by reactive RF co-sputtering and by introducing oxygen and argon in the chamber during growth and changing the power in the Cu target from 10 W to 50 W. The carrier distribution as a function of the position was studied by using energy dispersive spectroscopy–scanning electronic microscopy (EDS–SEM), micro-Raman spectroscopy, and photocarrier images. Structural characterization was carried out by using X-ray diffraction. According to the results, a lateral carrier distribution was found in all samples and a new phase identified as Cu₂Te was revealed for samples grown at 50 W.     

Synthesis and microwave dielectric properties of Zn<Subscript>1+<Emphasis Type="Italic">x</Emphasis></Subscript>Nb<Subscript>2</Subscript>O<Subscript>6+<Emphasis Type="Italic">x</Emphasis></Subscript>

We have studied the formation of zinc niobate, ZnNb₂O₆, with the columbite structure and the microstructure and microwave dielectric properties of Zn_1+x Nb₂O_6+x ceramics. The results demonstrate that, in the range 0.005 ≤ x ≤ 0.03, the excess zinc reduces the porosity of the material and increases its microwave quality factor Q. For x ≥ 0.03, the Q of the ceramics decreases because of the formation of an additional, zinc-enriched phase. Sintering in an oxygen atmosphere is shown to improve the dielectric properties of stoichiometric ZnNb₂O₆.     

Synthesis of Zirconium Diboride Films and ZrB<Subscript>2</Subscript>/BC<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>N<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> Heterostructures

Using mechanochemical synthesis, we have prepared zirconium borohydride, Zr(BH₄)₄, as a precursor for ZrB₂ film growth by chemical vapor deposition. We have carried out the thermodynamic modeling of phase formation processes in the Zr–B–(N)–H and Zr–B–(N)–H–O systems in a wide temperature range, from 100 to 2500°C, at various p_(H2)/p_(Zr(BH4)4) and p_(NH3)/p_(Zr(BH4)4) partial pressure ratios in the starting gas mixtures. A process has been proposed for the growth of zirconium diboride films by Zr(BH₄)₄ decomposition using two techniques: chemical vapor deposition and plasma-enhanced chemical vapor deposition. We also developed a process for the growth of multilayer ZrB₂-and BC _x N _y -based structures.     

Project of laser-pumped quantum <Emphasis Type="Italic">M</Emphasis><Subscript><Emphasis Type="Italic">X</Emphasis></Subscript> magnetometer

The possibility of creating a new scheme of a laser-pumped quantum magnetometric device based on a double-beam M _X magnetometer is considered. The proposed system ensures the simultaneous measurement of the modulus of the Earth’s magnetic field vector (with an absolute accuracy of 0.02 nT) and two angles of deviation of this vector with an absolute accuracy and sensitivity of not worse than 0.4″ (0.1 nT) at a measurement time of τ = 1 s. In contrast to the known analogous systems, the proposed scheme does not require generating additional magnetic fields.     

Thermodynamic modeling of BC<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>N<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> chemical vapor deposition from mixtures of <Emphasis Type="Italic">N</Emphasis>-trimethylborazine and nitrogen

Thermodynamic modeling of the chemical vapor deposition of boron-carbonitride-based films in the B-C-N-H-O system using mixtures of N-trimethylborazine and nitrogen is carried out for reduced pressures (13.3 and 1.33 Pa) and a wide temperature range (300–1300 K). The source of oxygen impurities in this system is a residual pressure of 0.40 Pa. The results indicate that films of various compositions can be grown. The conditions for the deposition of BC _x N _y films are identified.     

Nernst Signal in High-<Emphasis Type="Italic">T</Emphasis><Subscript><Emphasis Type="Italic">c</Emphasis></Subscript> Superconductors

The time-dependent Ginzburg–Landau equation with thermal noise is used to calculate the Nernst signal e _N , describing the Nernst effect, in type-II superconductor in the vortex-liquid regime. The Gaussian method used is an elaboration of the Hartree–Fock method. An additional assumption often made in analytical calculations that only the lowest Landau level significantly contributes to physical quantities of interest in the high-field limit is lifted by including all the Landau levels. The values of e _N are in good quantitative agreement with experimental data for temperature close to T _c on Bi₂Sr₂CaCu₂O_8+δ and Bi₂Sr₂Ca₂Cu₃O_10+δ .     

<Emphasis Type="Italic">p</Emphasis>-AgCoO<Subscript>2</Subscript>/<Emphasis Type="Italic">n</Emphasis>-ZnO heterojunction diode grown by rf magnetron sputtering

P-type transparent semiconducting AgCoO₂ thin films were deposited by rf magnetron sputtering of sintered AgCoO₂ target. The AgCoO₂ films grown by rf sputtering were highly c-axis oriented showing only (001) reflections in the X-ray diffraction pattern unlike in the case of amorphous films grown by pulsed laser deposition (PLD). The bulk powder of AgCoO₂ was synthesized by hydrothermal process. The optical bandgap was estimated as 4·15 eV and has a transmission of about 50% in the visible region. The temperature dependence of conductivity shows a semiconducting behaviour. The positive sign of Seebeck coefficient (+220 μVK⁻¹) indicates p-type conductivity. Transparent p-n heterojunction on glass substrate was fabricated by rf magnetron sputtering of p-AgCoO₂ and n-type ZnO: Al thin films. The structure of the diode was glass/ITO/n-ZnO/p-AgCoO₂. The junction between p-AgCoO₂ and n-ZnO was found to be rectifying.     

Electrical and photoelectric properties of electrodeposited <Emphasis Type="Italic">n</Emphasis>-Si/<Emphasis Type="Italic">n</Emphasis>-Cd<Subscript>1 - <Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript>x</Subscript>S heterojunctions

n-Si/n-Cd_{1 - x} Zn_xS heterojunctions are produced by electrodepositing Cd_{1 - x} Zn_xS (0 x 0.6) films on silicon substrates, and their electrical and photoelectric properties are studied. The results demonstrate that the spectral response of the heterojunctions depends strongly on the film composition and heat-treatment conditions. The highest photosensitivity is achieved at x = 0.6 by heat treatment at 350°C for 7 min: V _OC = 0.5 V and I _SC = 3.8 mA/cm² under illumination of 1500 lx at 300 K.Translated from Neorganicheskie Materialy, Vol. 41, No. 3, 2005, pp. 276–280.Original Russian Text Copyright © 2005 by Mamedov, Gasanov, Amirova.This revised version was published online in April 2005 with a corrected cover date.This revised version was published online in April 2005 with a corrected cover date.     

Synthesis and properties of Na<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript>CoO<Subscript>2</Subscript> (<Emphasis Type="Italic">x</Emphasis> = 0.55, 0.89) oxide thermoelectrics

Na_xCoO₂ (x = 0.55, 0.89) sodium cobaltites have been prepared by solid-state reactions; their structural parameters have been determined; their microstructure has been studied; and their thermal (thermal expansion, thermal diffusivity, and thermal conductivity), electrical (electrical conductivity and thermoelectric power), and functional (power factor, thermoelectric figure of merit, and self-compatibility factor) properties have been investigated in air at temperatures from 300 to 1100 K. The results demonstrate that, with increasing sodium content, the electrical conductivity and thermoelectric power of the materials increase and their thermal conductivity decreases. As a result, the power factor and thermoelectric figure of merit of the Na_0.89CoO₂ ceramic at a temperature of 1100 K reach 0.829 mW/(m K²) and 1.57, respectively. The electron and phonon (lattice) contributions to the thermal conductivity of the ceramics have been separately assessed, and their linear thermal expansion coefficients have been evaluated.     

Photosensitive point structures based on CuIn<Subscript>2<Emphasis Type="Italic">m</Emphasis> + 1</Subscript>Se<Subscript>3<Emphasis Type="Italic">m</Emphasis> + 2</Subscript> crystals

Photosensitive point structures based on CuIn_{2m + 1}Se_{3m + 2} (m = 0, 1, 2) single crystals have been obtained for the first time by means of electric-discharge welding (EDW). The stationary current-voltage characteristics and the photovoltaic properties of the structures based on CuInSe₂, CuIn₃Se₅, and CuIn₅Se₈ ternary semiconductors have been studied, which show evidence for the rectification effect and photoconversion. The character of interband transitions is established and the bandgap width variation in this series of compounds is traced. It is concluded that EDW can be successfully used for the fabrication of photoconverters based on multicomponent semiconductors.     

Thermodynamic properties of <Emphasis Type="Italic">p</Emphasis>-Sm<Subscript>2</Subscript>Zr<Subscript>2</Subscript>O<Subscript>7</Subscript>

The isobaric heat capacity of p-Sm₂Zr₂O₇ (pyrochlore phase) has been determined in the temperature range 10–1400 K using adiabatic, differential scanning, and relaxation calorimetry, and its enthalpy increment, entropy, and reduced Gibbs energy have been calculated with allowance for the contributions of its low-temperature magnetic transformations.     

Synthesis and structure of CeNi<Subscript>3</Subscript>D<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

We describe the synthesis of CeNi₃D _x deuterides at normal and high deuterium pressures. X-ray and neutron diffraction techniques were used to identify the position and determine the positional parameters of the metal and deuterium atoms. The deuterides are isostructural with the parent compound CeNi₃ but have a larger unit cell. Increasing the deuterium content to the composition CeNi₃D_5.2 leads to partial amorphization of the material. The variation in unit-cell volume observed at low and high deuterium contents indicates that the metal-deuterium bonds are partially ionic and partially metallic.     

Complex Electric Modulus Spectroscopy of (MnFe<Subscript>2</Subscript>O<Subscript>4</Subscript>)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>/CuTl-1223 Nanoparticles-Superconductor Composites

Manganese ferrite (MnFe₂O₄) nanoparticles and Cu_0.5Tl₀.₅Ba₂Ca₂Cu₃O_10?δ(CuTl-1223) superconducting phase were synthesized by sol-gel and solid-state reaction methods, respectively. Different contents of MnFe₂O₄ nanoparticles were added in CuTl-1223 superconducting matrix to get (MnFe₂O₄)_x/CuTl-1223; x =? 0～2.0 wt% nanoparticles-superconductor composites. Complex electric modulus spectroscopy measurements of (MnFe₂O₄)_x/CuTl-1223 composites were carried out at different test frequencies from 20 Hz to 10 MHz and at different operating temperatures from 78 to 253 K to analyze and interpret the dynamical aspects of electrical transport phenomena (i.e., such as carrier hopping rate, conductivity, and blocking factor). The complex electric modulus spectra showed the effects of both grains and grain-boundaries on electrical properties. The capacitance of grain-boundaries was found higher than that of grains. The capacitive behavior of grains was increased and that of grain-boundaries was decreased with increasing operating temperature for all these samples. Blocking factor of these composites was increased with increasing contents of MnFe₂O₄ nanoparticles. Shifting of peaks in imaginary part of modulus spectra towards lower frequency with increasing contents of these nanoparticles showed non-Debye type relaxation phenomenon in the material.     

Biocompatible nanoclusters of <Emphasis Type="Italic">O</Emphasis>-carboxymethyl chitosan-coated Fe<Subscript>3</Subscript>O<Subscript>4</Subscript> nanoparticles: synthesis,characterization and magnetic heating efficiency

In this work, we developed a polymer encapsulation of Fe₃O₄ nanoparticles as a core–shell nanocluster with different sizes to investigate the cluster structure effect on their magnetic properties and magnetic heating behavior. Well-dispersed nanoclusters of O-carboxymethyl chitosan-coated Fe₃O₄ nanoparticles were synthesized by microwave-assisted co-precipitation. The cluster sizes were tunable by varying the concentration of polymers used during synthesis. Nanoclusters present superparamagnetic behavior at room temperature with a reduction in saturation magnetization as a consequence of coating layer. The shift of blocking temperature to the higher value with increasing clusters size shows the stronger magnetic interaction in larger magnetic clusters. In a low alternating magnetic field with frequency of 178 Hz and amplitude of 103 Oe, nanoclusters offer a high heating efficiency. A maximum specific absorption rate of 204 W/g is observed in the sample with hydrodynamic size of 53 nm. In vitro cytotoxicity analysis performed on HeLa cells verified that nanoclusters show a good biocompatibility and can be an excellent candidate for applications in hyperthermia cancer treatment.     

Electrical and magnetic properties of poly(<Emphasis Type="Italic">m</Emphasis>-phenylenediamine)/NiFe<Subscript>2</Subscript>O<Subscript>4</Subscript> nanocomposites

Poly(m-phenylenediamine) (PmPD)/NiFe₂O₄ nanocomposites were synthesized by in situ oxidative polymerization containing two different ratios of NiFe₂O₄ nanoparticles (10 and 20%). Dielectric studies of PmPD/NiFe₂O₄ nanocomposites were carried out at different temperature and frequency. Dielectric constants of PmPD/NiFe₂O₄ nanocomposites vary with the concentration of NiFe₂O₄ nanoparticles. Magnetic measurements of NiFe₂O₄ nanoparticles and PmPD/NiFe₂O₄ nanocomposites showed that they have ferromagnetic behaviour at room temperature. The XRD patterns of PmPD/NiFe₂O₄ nanocomposites are confirming the incorporation of NiFe₂O₄ nanoparticles into PmPD polymer. Room temperature Mössbauer spectrum of NiFe₂O₄ nanoparticles demonstrated that the Fe is in 3+ oxidation state with cubic structure. The SEM image of PmPD shows sphere like morphology. TGA suggest that thermal stability of PmPD/NiFe₂O₄ nanocomposites is greater than PmPD.     

Origin of the Magnetism in Undoped and Mn-Doped In<Subscript><Emphasis Type="Bold">2</Emphasis></Subscript>O<Subscript><Emphasis Type="Bold">3</Emphasis></Subscript>: A First-Principles Study

The magnetism of undoped and Mn-doped In₂O₃ has been investigated by employing density functional calculations. For undoped In₂O₃, a neutral In vacancy in In₂O₃ leads to the formation of a net moment of 3 μ _B, which originates from the strong spin polarization of 2p orbitals of O atoms. While, Mn-doped In₂O₃ system shows robust ferromagnetism which can be attributed to the p-d hybridization between Mn and their neighboring O atoms. In addition, because two O atoms between the two Mn atoms are removed, the ground state of the system have a transformation from the ferromagnetic to the antiferromagnetic state, which further demonstrates that the ferromagnetism is mediated through the p-d interaction.     

Progress in Critical Current Density (<Emphasis Type="Italic">J</Emphasis><Subscript><Emphasis Type="Italic">c</Emphasis></Subscript>) in Sintered MgB<Subscript>2</Subscript> Bulks

The present paper focuses on methods of further improving the flux pinning and critical current density of disk-shaped MgB₂ bulk superconductors by adding excess Mg metal in combination with an optimum silver content and optimized processing conditions. Bulk MgB₂ samples were produced by in situ solid-state reaction in Ar gas ambient using high purity commercial powders of Mg metal and 1.5 wt% carbon-coated amorphous B powders mixed in a fixed ratio of Mg/B = 1.1:2. Further, 4 wt% silver was added to improve flux pinning as well as mechanical performance of the bulk MgB₂ material. The magnetization measurements confirmed a sharp superconducting transition with T_c,onset at around 37 K, which is only by 1 K lower than in bulk MgB₂ material produced without carbon-coated amorphous boron. The critical current density (J_c) values significantly improved in the MgB₂ material with 4 wt% of silver and 1.5 wt% of carbon-coated amorphous boron, sintered at 775 ^°C for 3 h. At 20 K, this sample showed J_c at around 500 and 350 kA/cm² in the self-field and 1 T, respectively, which makes it suitable for several industrial applications.     

Design of active and stable oxygen reduction reaction catalysts by embedding Co<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>O<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> nanoparticles into nitrogen-doped carbon

The oxygen reduction reaction (ORR) is essential in research pertaining to life science and energy. In applications, platinum-based catalysts give ideal reactivity, but, in practice, are often subject to high costs and poor stability. Some cost-efficient transition metal oxides have exhibited excellent ORR reactivity, but the stability and durability of such alternative catalyst materials pose serious challenges. Here, we present a facile method to fabricate uniform Co _x O _y nanoparticles and embed them into N-doped carbon, which results in a composite of extraordinary stability and durability, while maintaining its high reactivity. The half-wave potential shows a negative shift of only 21 mV after 10,000 cycles, only one third of that observed for Pt/C (63 mV). Furthermore, after 100,000 s testing at a constant potential, the current decreases by only 17%, significantly less than for Pt/C (35%). The exceptional stability and durability results from the system architecture, which comprises a thin carbon shell that prevents agglomeration of the Co _x O _y nanoparticles and their detaching from the substrate.

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Structural and electrical properties of Ta<Subscript><Emphasis Type="Bold">2</Emphasis></Subscript>O<Subscript><Emphasis Type="Bold">5</Emphasis></Subscript> thin films prepared by photo-induced CVD

Tantalum oxide (Ta ₂ O ₅ ) films and Al/Ta ₂ O ₅ /Si MOS capacitors were prepared at various powers by ultraviolet photo-inducing hot filament chemical vapour deposition (HFCVD). Effects of ultraviolet light powers on the structure and electrical properties of Ta ₂ O ₅ thin films were studied using X-ray diffraction (XRD) and atomic force microscopy (AFM). The dielectric constant, leakage current density and breakdown electric field of the samples were studied by the capacitance–voltage (C–V) and current–voltage (I–V) measurements of the Al/Ta ₂ O ₅ /Si MOS capacitors. Results show that the Ta ₂ O ₅ thin films grown without inducement of UV light belong to amorphous phase, whereas the samples grown with inducement of UV-light belong to δ-Ta ₂ O ₅ phase. The dielectric constant and leakage current density of the Ta ₂ O ₅ thin films increase with increasing powers of the UV- lamps. Effects of UV- lamp powers on the structural and electrical properties were discussed.