Growth and evaluation of lpe graded composition AlxGa1−xAs layers for high efficiency graded bandgap solar cells

A melt-mixing LPE growth technique to obtain a graded composition Al_xGa_1−xAs layer is described. The graded bandgap AlGaAs/GaAs solar cell requires the Al fraction (x) in the Al_xGa_1−xAs surface layer to increase from the junction towards the surface. The graded composition Al_xGa_1−xAs layer creates a built-in electric field for minority carriers which improves the carrier collection process. This graded bandgap solar cell should enable one to realize the full potential of GaAs as a material for solar energy conversion. Quantitative evaluation of the composition profile for these graded layers is needed to develop the proper growth technique and to understand the resulting solar cell characteristics. Rutherford backscattering analysis technique is described which has been successfully used to profile such layers.     

Ion beam mixing of silicon-germanium thin films

An overview of processing silicon-germanium (Si-Ge) alloys for various applications is presented here. Several methods of formation are briefly summarized. In particular, results of preliminary experiments on ion-beam mixing of Si-Ge layered structures deposited by physical vapor deposition and subsequently ion implanted with varying doses of argon are presented. Different layered structures have been designed and mixed to obtain optimal process conditions. The ion beam mixing process yields films with a gradual band-gap variation from 1.12 eV to 0.85 eV, thus allowing quite a wider spectrum of wavelengths to be absorbed. Rutherford backscattering spectrometry (RBS) has been used to characterize the nature and extent of the mixing of as-deposited and irradiated films.     

Rutherford backscattering studies on high-energy Si-implanted InP

High-energy Si-implantations into InP:Fe were examined using Rutherford backscattering (RBS) via channeling measurements. Variable-fluence implantations at 3 MeV and variable-energy implantations for a fluence of 3 x 10¹⁴ cm⁻² were done. A damagestudy on the 3 MeV Si-implanted samples by RBS indicated formation of a continuous, buried amorphous layer for a fluence of ≈5 x 10¹⁴ cm⁻². The quality of the crystal in the region of the amorphous layer was poor after annealing at any temperature (≤900° C), indicating that the crystallization during annealing resulted in either a highly defective material or a polycrystal. For samples with damage below the continuous amorphous level, damage recovery is essentially independent of damage concentration. In the variable-energy-implanted samples, the region of damage moved deeper below the sample surface with increasing energy.     

Study on the thermal stability of Ga-doped ZnO thin film: A transparent conductive layer for dye-sensitized TiO2 nanoparticles based solar cells

Generally, optoelectronic devices are fabricated at a high temperature. So the stability of properties for transparent conductive oxide (TCO) films at such a high temperature must be excellent. In the paper, we investigated the thermal stability of Ga-doped ZnO (GZO) transparent conductive films which were heated in air at a high temperature up to 500 °C for 30 min. After heating in air at 500 °C for 30 min, the lowest sheet resistance value for the GZO film grown at 300 °C increased from 5.5 Ω/sq to 8.3 Ω/sq, which is lower than 10 Ω/sq. The average transmittance in the visible light of all the GZO films is over 90%, and the highest transmittance is as high as 96%, which is not influenced by heating. However, the transmittance in the near-infrared (NIR) region for the GZO film grown at 350 °C increases significantly after heating. And the grain size of the GZO film grown at 350 °C after annealing at 500 °C for 30 min is the biggest. Then dye-sensitized TiO2 NPs based solar cells were fabricated on the GZO film grown at 350 °C (which exhibits the highest transmittance in NIR region after heating at 500 °C for 30 min) and 300 °C (which exhibits the lowest sheet resistance after heating at 500 °C for 30 min). The dye-sensitized solar cell (DSSC) fabricated on the GZO film grown at 350 °C exhibits superior conversion efficiency. Therefore, transparent conductive glass applying in DSSCs must have a low sheet resistance, a high transmittance in the ultraviolet–visible–infrared region and an excellent surface microstructure.     

Effect of TiO2 nanoparticle content in sol–gel derived TiO2 paste on the photovoltaic properties of TiO2 photoanode of dye-sensitized solar cells

In the present work, the effect of the amount of TiO₂ nanoparticles, added to the sol–gel derived paste, on the photovoltaic properties of fabricated dye-sensitized solar cells (DSSCs) was investigated. A titanium sol (Ti-sol) was synthesized using a Pechini type sol–gel method, and different pastes were prepared by adding various amounts of TiO₂ nanoparticles to the obtained Ti-sol. The pastes were used to fabricate the mesoporous TiO₂ semiconducting layers for DSSCs. It was observed that by increasing the mass ratio (MR) of TiO₂ nanoparticles to Ti-sol the thickness of TiO₂ layer increases. This led to the more adsorption of dye molecules per unit area of active TiO₂ layer, which were determined by UV–vis spectrophotometry. Also, micro-cracks were observed in TiO₂ layers obtained from pastes with low MR values. But their amount and size decreased with increasing MR, which was due to the decrease of paste surface tension (σ). As a result, short circuit current density (I_sc) showed continuous increase with increasing MR, which was due to the more dye adsorption. Open circuit voltage (V_oc) first increased and then decreased by enhancing MR, which was explained by considering the electron–hole recombination rate. Finally, the DSSC fabricated from the paste with MR=0.65 showed the maximum conversion efficiency (η).     

Rutherford Backscattering Spectrometry Analysis of Self-Formed Ti-Rich Interface Layer Growth in Cu(Ti)/Low-<Emphasis Type="Italic">k</Emphasis> Samples

A new fabrication technique to prepare ultrathin barrier layers for nanoscale Cu wires was proposed in our previous studies. Ti-rich layers formed at Cu(Ti)/dielectric layer interfaces consisted of crystalline TiC or TiSi and amorphous Ti oxides. The primary control factor for the Ti-rich interface layer composition was C concentration in the dielectric layers rather than the formation enthalpy of the Ti compounds. To investigate Ti-rich interface layer growth in Cu(Ti)/dielectric layer samples annealed in ultrahigh vacuum, Rutherford backscattering spectrometry (RBS) was employed in the present study. Ti peaks were obtained only at the interfaces for all samples. Molar amounts of Ti atoms segregated to the interfaces (n) were estimated from Ti peak areas. Log n values were proportional to log t values. Slopes were similar for all samples, suggesting similar growth mechanisms. The activation energy (E) for Ti atoms reacting with the dielectric layers containing carbon (except SiO₂) tended to decrease with decreasing C concentration (decreasing k), while those for the SiO₂ layers were much higher. Reaction rate coefficients [Z · exp(−E/RT)] were insensitive to C concentration in the dielectric layers. These factors lead to the conclusion that growth of the Ti-rich interface layers is controlled by chemical reactions, represented by the Z and E values, of the Ti atoms with the dielectric layers, although there are a few diffusion processes possible.     

Fabrication of a counter electrode using glucose as carbon material for dye sensitized solar cells

Carbon material was produced from the graphitization of glucose at high temperature in flowing argon. The produced carbon material was characterized using Scanning electron microscopy, Transmission electron microscopy, Raman spectroscopy and XRD. Carbon slurry of the produced carbon was made in ethanol by using polyvinylpyrrolidone (PVP) as surfactant. Carbon slurry was coated homogeneously on fluorine doped tin oxide (FTO) glass by a doctor blade technique and applied as counter electrode for dye synthesized solar cell. The current density (J) and open circuit voltage (V_OC) of fabricated cell was 8.30 mA cm⁻² and 0.77 V respectively. The efficiency of the cell was 3.63%, which is comparable to 5.82% of cell with platinum counter electrode under the same experimental conditions.     

A remarkable enhancement of efficiency by co-adsorption with CDCA on the bithiazole-based dye-sensitized solar cells

Three new organic dyes containing a 5,5′-bithiazole or 2,2′-bithiazole entity have been synthesized for dye-sensitized solar cell (DSSC) applications. The conversion efficiencies of DSSCs fabricated are moderate due to serious dye aggregation. Upon addition of CDCA co-adsorbents, the optimized cell efficiencies were improved by 43–86%. The best efficiency was 6.31%, which reached 86% of N719-based DSSC fabricated and measured under similar condition. The efficiency can be further improved to 6.45% by adding a near-IR absorbing dye as the co-sensitizer due to broadened IPCE spectrum.     

Vertically-oriented few-layer graphene supported by silicon microchannel plates as a counter electrode in dye-sensitized solar cells

Vertically-oriented few-layer graphene supported by silicon microchannel plates annealed at different temperatures are used in dye-sensitized solar cells (DSSCs). The structure, morphology, and electrochemical characteristics are determined by AFM, SEM, XPS, cyclic voltammetry, electrochemical impedance spectroscopy, and photocurrent density-voltage curves. The graphene/Si-MCP fabricated by electrochemical exfoliation delivers enhanced power conversion efficiency in DSSC and the materials annealed under ambient conditions at 300 °C show the best results due to the smaller oxygen concentration in graphene and larger electrical conductance. Owing to the microelectronics-compatible fabrication process and excellent properties of the device, the counter electrode has large potential in high-performance silicon-based monolithic DSSCs.     

Optoelectronic properties of Zn0.52Se0.48/Si Schottky diodes

Zn_0.52Se_0.48/Si Schottky diodes are fabricated by depositing zinc selenide (Zn_0.52Se_0.48) thin films onto Si(1 0 0) substrates by vacuum evaporation technique. Rutherford backscattering spectrometry (RBS) analysis shows that the deposited films are nearly stoichiometric in nature. X-ray diffractogram of the films reveals the preferential orientation of the films along (1 1 1) direction. Structural parameters such as crystallite size (D), dislocation density (δ), strain (ε), and the lattice parameter are calculated as 29.13 nm, 1.187 × 10⁻¹⁵ lin/m², 1.354 × 10⁻³ lin⁻² m⁻⁴ and 5.676 × 10⁻¹⁰ m respectively. From the I–V measurements on the Zn_0.52Se_0.48/p-Si Schottky diodes, ideality and diode rectification factors are evaluated, as 1.749 (305 K) and 1.04 × 10⁴ (305 K) respectively. The built-in potential, effective carrier concentration (N_A) and barrier height were also evaluated from C–V measurement, which are found to be 1.02 V, 5.907 × 10¹⁵ cm⁻³ and 1.359 eV respectively.     

Thermal stability of interfaces between metals and InP-based materials

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.     

Ion implantation doping of OMCVD grown GaN

Doping by ion implantation using Si, O, Mg, and Ca has been studied in single crystal semi-insulating and n-type GaN grown on a-sapphire substrates. The n-and p-type dopants used in this study are Si and O; Mg and Ca, respectively. Room temperature activation of Si and O donors has been achieved after 1150°C annealing for 120 s. The activation of Mg and Ca acceptors is too low to measure at both room temperature and 300°C. Using higher doses to achieve a measurable p-type conduction increases the amount of damage created by the implantation. Rutherford back scattering measurements on this material indicate that the damage is still present even after the maximum possible heat treatment. Secondary ion mass spectrometry measurements have indicated a redistribution in the measured profiles of Mg due to annealing.     

Porphyrins modified with a low-band-gap chromophore for dye-sensitized solar cells

Two novel porphyrin dyes (PMBTZ and PHBTZ) modified with alkyl-thiophene and 2,1,3-benzothiadiazole (BTZ) moieties were designed and synthesized. The optical and electrochemical properties were characterized by UV-visible, fluorescence spectroscopy and cyclic voltammetry. With the introduction of the low-band-gap chromophore onto the porphyrins, the absorption spectra of the two porphyrin dyes in the range of 450-600 nm were broadened and the maximum wavelength was red-shifted compared with P_Zn as expected. The first oxidation potentials (E_ox1) were altered to the negative, which lowered from 1.27 to 1.11 and 1.15 eV, respectively. For a typical solar cell device based on dye PMBTZ, the maximal monochromatic incident photon-to-current conversion efficiency (IPCE) can reach to 65%, with a broad respondent region of 350-800 nm. Under standard global AM 1.5 solar condition, the dye-sensitized solar cell (DSSC) based on the dye PMBTZ showed the best photovoltaic performance: a short-circuit photocurrent density (J_sc) of 14.11 mA/cm², an open-circuit photo voltage (V_oc) of 0.59 V, and a fill factor (ff) of 0.66, corresponding to solar-to-electric power conversion efficiency (η) of 5.46%.     

Thieno[2,3-b]indole-based organic dyes for dye-sensitized solar cells: Effect of π-linker on the performance of isolated dye and interface between dyes and TiO2

A series of novel D-π-A type organic dyes with different π-linker are theoretically designed and investigated for their potential applications in dye-sensitized solar cells (DSSCs). We mainly focused on the influence of the extension of π-linker on the overall efficiency. The discussions are classified into two aspects: one is the isolated dyes and the other is the dye-TiO₂ system. The calculated results indicate that the isolated dyes THI-2T-C, THI-4T-3C, and THI-6T-5C have the better overall efficiency. Further, the THI-4T-3C and THI-5T-4C have the acceptable performance if the dye-TiO₂ system is considered. Combination of the isolated and the adsorbed systems, the THI-4T-3C with the moderate π-linker is considered to be more suitable choice for thieno[2,3-b]indole-based dyes rather than the longest π-linker.     

MOCVD生长的InGaN薄膜的离子束背散射沟道及其光致发光

采用 MOCVD技术以 Al2 O3为衬底在 Ga N膜上生长了 In Ga N薄膜 .以卢瑟福背散射 /沟道 (RBS/Channeling)技术和光致发光 (PL )技术对 Inx Ga1 - x N / Ga N / Al2 O3样品进行了测试 ,获得了合金层的组分、厚度、元素随深度分布、结晶品质及发光性能等信息 .研究表明生长温度和 TMIn/ TEGa比对 In Ga N薄膜的 In组分和生长速率影响很大 .在一定范围内 ,降低 TMIn/ TEGa比 ,In Ga N膜的生长速率增大 ,合金的 In组分反而提高 .降低生长温度 ,In Ga N膜的 In组分提高 ,但生长速率基本不变 . In Ga N薄膜的结晶品质随 In组分的增大而显著下降 ,In Ga N薄膜