共查询到6条相似文献,搜索用时 15 毫秒
1.
Chander ShekharAuthor VitaeK.I. GnanasekarAuthor Vitae E. PrabhuAuthor VitaeV. JayaramanAuthor Vitae T. GnanasekaranAuthor Vitae 《Sensors and actuators. B, Chemical》2011,155(1):19-27
Indium oxide (In2O3) doped with 0.5-5 at.% of Ba was examined for their response towards trace levels of NOx in the ambient. Crystallographic phase studies, electrical conductivity and sensor studies for NOx with cross interference for hydrogen, petroleum gas (PG) and ammonia were carried out. Bulk compositions with x ≤ 1 at.% of Ba exhibited high response towards NOx with extremely low cross interference for hydrogen, PG and ammonia, offering high selectivity. Thin films of 0.5 at.% Ba doped In2O3 were deposited using pulsed laser deposition technique using an excimer laser (KrF) operating at a wavelength of (λ) 248 nm with a fluence of ∼3 J/cm2 and pulsed at 10 Hz. Thin film sensors exhibited better response towards 3 ppm NOx quite reliably and reproducibly and offer the potential to develop NOx sensors (Threshold limit value of NO2 and NO is 3 and 25 ppm, respectively). 相似文献
2.
The barium–strontium–titanate (BST, Ba0.64Sr0.36TiO3) thin films have been prepared by the sol–gel method on a platinum-coated silicon substrate. The resulting thin films show very good dielectric and pyroelectric properties. The dielectric constant and dissipation factor for Ba0.64Sr0.36TiO3 thin film at a frequency of 200 Hz were 592 and 0.028, respectively. The dependence of the capacitance as a function of the voltage shows a strongly non-linear character, and two peaks characterizing spontaneous polarization switching can be clearly seen in this curve, indicating that the films have a ferroelectric nature. The capacitance changed from 495 to 1108 pF with the applied voltage in the −5 to +5 V range at a frequency of 100 kHz. The peak pyroelectric coefficient at 30 °C is 1080 μC/m2 K. The pyroelectric coefficient at room temperature (25 °C) is 1860 μC/m2 K, and the figure-of-merit of this film is 37.4 μC/m3 K. The high pyroelectric coefficients and the greater figures-of-merit of Ba0.64Sr0.36TiO3 thin films make it possible to be used for thermal infrared detection and imaging. 相似文献
3.
It is shown that the doping of Zn and Sn can improve the gas sensitivity of α-Fe2O3-based sensing material to CO. X-ray photo-electron spectroscopy analysis suggests that this is mainly due to the fact that the simultaneous doping of Zn and Sn can increase the S and hence SO42− contents in the α-Fe2O3(SO42−, Sn, Zn) sensing material. The results also suggest that under a given condition, the gas sensitivity of α-Fe2O3(SO42−, Sn, Zn) to CO can be optimised by properly adjusting the doped Zn content. 相似文献
4.
New gas sensitive MIS structures Pt/Al2O3(M)/p-Si, where M = Pt, Rh, with granular dielectric Al2O3 layers doped with noble metals were obtained by an aerosol pyrolysis method. Surface morphology and composition of the structures were studied by TEM, AFM and EPMA. Sensor properties of the MIS structures were studied towards reducing gases (1000 ppm H2, 300 ppm CO, 1000 ppm CH4 in air) at 100 and 200 °C. The Pt/Al2O3(M = Pt, Rh)/Si structures showed a very high sensor response to reducing gases. A shift of C–V characteristics was up to 2.5 V under CO, 2.2 V under hydrogen and 0.7 V under methane. High values of shift of C–V curves can be related with cooperative influence of a change of surface state density in dielectric layer, reduction of platinum electrode and dipole layer formation. 相似文献
5.
L.A. Patil V.V. Deo M.D. Shinde A.R. Bari M.P. KaushikAuthor vitae 《Sensors and actuators. B, Chemical》2011,160(1):234
Nanostructured perovskite CdSnO3 and Pt-CdSnO3 thin films were prepared using ultrasonic spray pyrolysis technique. The nozzle (driven by ultrasonic frequency of 120 kHz) fixed on microprocessor controlled motorized arm could move in X–Y direction and spray onto heated (300 °C) glass substrate to give the films of repeatable thickness and microstructure. Structural and microstructural properties of the films were studied using X-ray diffraction and transmission electron microscopy (TEM), respectively. The sensing performance of the films was tested for CWA simulants, such as, CEES (2-chloroethyl ethyl sulfide C4H9ClS), DMMP (dimethyl methyl phosphonate C3H9O3P) and CEPS (2-chloroethyl phenyl sulfide C8H9ClS). Both CdSnO3 and Pt-CdSnO3 showed higher response, better selectivity and faster speed of response to CEES as compared to their responses of DMMP and CEPS. CEES response of Pt-CdSnO3 is larger than the response of CdSnO3. The results are discussed and interpreted. 相似文献