Effect of Sintering Atmosphere on Grain Boundary Segregation and Grain Growth in Niobium-Doped SrTiO3

To investigate the donor segregation in grain boundary regions and its effect on grain growth in SrTiO₃, SrTiO₃ powder compacts were doped with Nb₂O₅ and sintered in air or in hydrogen. The Nb-doped SrTiO₃ sintered in air did not show any detectable Nb segregation at the grain boundary region while an appreciable segregation was observed in the space-charge region of the sample sintered in H₂. The observed donor segregation in H₂ suggests a negative grain boundary charge and compensating positive space charge, which are the opposite to those in air. The negative grain boundary core was attributed to the segregation of inherently present acceptor impurities and the trapping of electrons at grain boundaries. In the H₂-sintered sample, where the added Nb ions were segregated in the space-charge region, the grain growth was suppressed. This result may indicate that the grain growth suppression in H₂ is due to the Nb solute drag of the boundary motion and the reduction in Ti vacancies.     

Grain Boundaries of Semiconducting SrTiO3 and BaTiO3 Ceramics Synthesized from Surface-Coated Powders

The chemical and electrical features of the grain boundaries in polycrystalline SrTi_0.99Nb_0.01O₃ (ST) and BaTiO₃ (BT) ceramics, which were synthesized by hot-press sintering Na- and Mn-coated semiconducting ST and BT powders, respectively, were investigated. Because of the excess negative electric charges formed near grain boundaries, electrostatic potential barriers were formed near the grain boundaries. The electrical features of the grain boundaries in ceramics are very sensitive to the amount of the coating material. When the amount of the coating material was increased from 0 to 5 wt%, the threshold voltage of the ST ceramics and the resistivity jump ratio of the BT ceramics increased from 0.7 to 81.0 V/cm and from 1.0 to 2.0 × 10³, respectively. The electrical features of the grain boundaries are related to their chemical characteristics.     

Effect of PO2 on Bulk and Grain Boundary Resistance of n-Type BaTiO3 at Cryogenic Temperatures

Complex impedance analysis at cryogenic temperatures has revealed that the bulk and grain boundary properties of BaTiO₃ polycrystals are very sensitive to the oxygen partial pressure during sintering. Polycrystals sintered at P _O2 as low as 10⁻¹⁵ atm were already electrically heterogeneous. The activation energy of the bulk conductivity in the rhombohedral phase was found to be close to that of the reduced undoped single crystal (i.e., 0.093 eV). The activation energy of the grain boundary conductivity increases with the temperature of the postsinter oxidation treatment from 0.064 to 0.113 eV. Analysis of polycrystalline BaTiO₃ sintered in reducing atmosphere and then annealed at P _O2= 0.2 atm has shown that the onset of the PTCR effect occurs at much higher temperatures than expected in the framework of the oxygen chemisorption model. The EPR intensity of barium and titanium vacancies increases after oxidation at T > 1000°C. A substantial PTCR effect is achieved only after prolonged annealing of the ceramic in air at temperatures as high as 1200–1250°C. This result suggests that the PTCR effect in polycrystalline BaTiO₃ is associated with interfacial segregation of cation vacancies during oxidation of the grain boundaries.     

Effect of Ba6Ti17O40/BaTiO3 Interface Structure on {111} Twin Formation and Abnormal Grain Growth in BaTiO3

A structural transition of Ba₆Ti₁₇O₄₀/BaTiO₃ interfaces from faceted to rough was induced by reducing oxygen partial pressure in the atmosphere. As the oxygen partial pressure decreased, the number densities of {111} twins and abnormal grain decreased. TEM observation showed that the twin formation was governed only by the faceting of the interface. Experimental evidence of {111} twin-assisted abnormal growth of faceted BaTiO₃ grains was also obtained.     

Distribution of Grain Boundaries in SrTiO3 as a Function of Five Macroscopic Parameters

Measurements of the grain boundary population as a function of misorientation and boundary plane orientation show that the distribution is inversely correlated to the sum of the energies of the surfaces comprising each boundary. The observed correlation suggests that the difference between the energy of a high-angle grain boundary and the two component surfaces is relatively constant as a function of misorientation. Two exceptions to this correlation were identified: low-misorientation-angle boundaries and the coherent twin boundary, where the (111) planes in the adjoining crystals are parallel to each other, but rotated by 60° around the [111] axis. In these cases, the high degree of coincidence across this interface probably lowers the boundary energy with respect to that of the component surfaces. For all other boundaries, the anisotropy of the population is accurately predicted by the surface energy anisotropy, and in general, boundaries display a preference for {100} orientations, the planes of minimum surface energy.     

Abnormal Grain Growth Occurring at the Surface of a Sintered BaTiO3 Specimen

When a BaTiO₃ powder compact was sintered in air, the abnormal grain growth (AGG) was observed to occur at the surface of the specimen. The BaO evaporation from the surface and consequent formation of eutectic liquid is suggested to be the cause of AGG. When the evaporation of BaO during sintering was prevented by embedding the specimen in the same powder, no AGG was observed to occur.     

Microcontact Impedance Spectroscopy at Single Grain Boundaries in Fe-Doped SrTiO3 Polycrystals

Microcontacts on adjacent grains of polycrystalline Fe-doped SrTiO₃ samples have been used to locally investigate the properties of individual grain boundaries. Impedance spectroscopy was employed to separate bulk and grain boundary impedances. Experiments at about 30 different grain boundaries permit far-reaching conclusions on the distribution of grain boundary resistances, capacitances, and peak frequencies measured between adjacent grains. The rather narrow distribution of the grain boundary peak frequencies indicates a narrow distribution of grain boundary resistivities. All features (e.g., nonlinear current–voltage characteristics, grain boundary thickness, temperature dependence) are in accordance with the assumption of space charge depletion layers (double Schottky barriers) as the origin of the enhanced grain boundary resistivity. The average barrier height measured was about 630 mV. For comparison conventional (macroscopic) impedance measurements on a polycrystal were also performed and a brick layer model was used to extract effective properties. The reasonable agreement between these effective parameters and the average of the locally obtained parameters demonstrates that, in this case, a brick layer analysis of conventional impedance experiments yields satisfying estimates of the grain boundary properties.     

Low-Temperature Sintering of (Ba0.6Sr0.4)TiO3

An addition of just 0.4 wt% Li₂O to (Ba_0.6Sr_0.4)TiO₃ powder was able to reduce the sintering temperature to ≤900°C and produce ceramics with a relative density of 97%. Small amounts of two secondary phases were formed during this process: Li₂TiO₃ and Ba₂TiO₄. The addition of Li₂O depresses the ferroelectric character of the (Ba_0.6Sr_0.4)TiO₃ and, as a result, reduces the permittivity, improves the temperature coefficient of permittivity, and reduces the dielectric losses. The tunability shows no significant variation with Li₂O concentration and remains between 16.5% and 13.5%. A low-temperature sintering mechanism was proposed. The mechanism involves the intermediate formation of BaCO₃, its melting and the incorporation of Li⁺ into the BST. The sintering mechanism can be characterized as reactive liquid-phase sintering.     

Incorporation of Er3+ into BaTiO3

The incorporation of Er³⁺ into BaTiO₃ ceramics was investigated on samples containing 0.25, 0.5, 1, 2, 8, and 10 at.% of dopant, after sintering at 1350–1550°C in air. For Er³⁺ concentrations ≤1 at.%, dense and large-grained ceramics with low room-temperature resistivity (10²–10³Ω·cm) were obtained. The observed properties are largely independent of stoichiometry. Simultaneous substitution of Er³⁺ at both cation sites, with higher preference for the Ba site, is proposed. The behavior of heavily doped ceramics depends on stoichiometry. When Ba/Ti < 1, the electrical properties change from slightly semiconducting to insulating as Er concentration increases from 2 to 8 at.%. The ceramics have tetragonal perovskite structure and contain a large amount of Er₂Ti₂O₇ pyrochlore phase. On the other hand, when Ba/Ti > 1, the ceramics are insulating, fine-grained, and single phase. In this case, incorporation of Er³⁺ predominantly occurs at the Ti site, with oxygen vacancy compensation. Incorporation is accompanied by a significant reduction of tetragonality and by expansion of the unit cell. The different results indicate that Er³⁺ solubility at the Ba site does not exceed 1 at.%, whereas solubility at the Ti site is at least 10 at.%. However, the incorporation of Er³⁺ and the resulting properties are also strongly affected by sintering conditions.     

Kinked Grain Boundaries in Alumina Doped with Y2O3

Polycrystalline alumina specimens with and without MgO doping show smoothly curved grain boundaries after heat treatment at 1400°C indicating their rough structure. When heat-treated at 1400° and 1500°C for 24 h after packing in an alumina–YAG powder mixture, many grain boundaries (without any liquid phase) develop kinks of large and small scales as observed by scanning electron microscopy and transmission electron microscopy. The addition of Y₂O₃ at concentrations close to the solubility limit is thus shown to induce the grain boundary transition to singular structures.     

Electrical Properties of Cerium-Doped BaTiO3

The high-temperature equilibrium electrical conductivity of Ce-doped BaTiO₃ was studied in terms of oxygen partial pressure, P (O₂), and composition. In (Ba_1−xCe _x )TiO₃, the conductivity follows the −1/4 power dependence of P (O₂) at high oxygen activities, which supports the view that metal vacancies are created for the compensation of Ce donors, and is nearly independent of P (O₂) where electron compensation prevails at low P (O₂). When Ce is substituted for the normal Ti sites, there is no significant change in conductivity behavior compared with undoped BaTiO₃, indicating the substitution of Ce as Ce⁴⁺ for Ti⁴⁺ in Ba(Ti_1−yCe _y )O₃. The Curie temperature ( T _c) was systematically lowered when Ce³⁺ was incorporated into Ba²⁺ sites, whereas the substitution of Ce⁴⁺ for Ti⁴⁺ sites resulted in no change in this parameter.     

Solubility of Silver and Palladium in BaTiO3

Silver, palladium, and their alloys are frequently used as electrode materials for BaTiO₃ (BT) based dielectrics. However, the electrodes and dielectrics usually are cofired at high temperatures, and silver and palladium can dissolve into the BT during cofiring. In the present study, the solubility of silver and palladium into BT after cofiring was determined. Three measurement techniques were used to determine solubility: chemical analysis, structural analysis, and dielectric analysis. The solubility of the silver in the BT was low, 450 ppm, after cofiring at 1290°C for 2 h in air. The diffusion distance of the silver ions into the BT was >5 μm. The solubility of the palladium in the BT was even lower, 50 ppm at 1290°C, and the diffusion distance was ∼1 μm. The solubility of both the silver and the palladium in the BT decreased as the oxygen partial pressure of the sintering atmosphere decreased. These results demonstrated that both silver and palladium solutes act as acceptors for BT.     

Growth of BaTiO3 Seed Grains by the Twin-Plane Reentrant Edge Mechanism

Two different types of BaTiO₃ seed particles, normal and twinned seeds of ∼30 μm on the average, were prepared from crushed sintered specimens. Normal seeds were obtained from the usual BaTiO₃ sintered compacts, while twinned seeds containing a double twin were obtained from BaTiO₃ compacts sintered with 2 mol% of SiO₂. The BaTiO₃ powder compacts were again prepared with 5 wt% of seed grains and sintered under various conditions. The microstructural evolution was quite different in the two cases: the growth of normal seed grains was ultimately limited but that of the twinned seeds continued extensively. The observed difference is discussed in terms of the growth mechanism and the atomic structure of interfaces.     

Sintering Characteristics in the BaTiO3–Nb2O5–Co3O4 Ternary System: II, Stability of So-called "Core–Shell" Structure

The sintering characteristics and the reaction of additives with BaTiO₃ (BT) were examined for two materials having Nb-rich composition (Comp.N) and Co-rich composition (Comp.C) to elucidate the relation between the stability of the core–shell microstructure and the Nb/Co ratio in the BT–Nb₂O₅–Co₃O₄ system. TEM observation revealed that the concentration gradient of Nb and Co existed in the shell region although Nb and Co macroscopically distributed homogeneously. X-ray diffraction analysis showed that the shell formation preceded the densification and completed at about 1280°C for both Comp.N and Comp.C as determined from differential scanning calorimetry. A diffusion couple experiment disclosed that Co had a larger diffusivity than Nb and that the diffusion of Co was suppressed when the sample was codoped with a sufficient amount of Nb. On the basis of these experimental results, new mechanisms of the formation and collapse of core–shell structure in the BT–Nb₂O₅–Co₃O₄ system were proposed.     

Effect of Li2O and PbO Additions on Abnormal Grain Growth in the Pb(Mg1/3Nb2/3)O3–35 mol% PbTiO3 System

Abnormal grain growth in Pb(Mg_1/3Nb_2/3)O₃–35 mol% PbTiO₃ (PMN-35PT) ceramics doped with Li₂O and PbO has been investigated. Replacing the PbO dopant with up to 2 mol% Li₂O caused an increase in the number of abnormal grains. For the composition containing 2 mol% Li₂O and 6 mol% PbO, the amount of abnormal grain growth decreased with increasing sintering temperature. Single crystals of ∼6 mm × 6 mm × 2 mm thickness were grown from the 2 mol% Li₂O, 6 mol% PbO-containing composition via the templated grain growth method. Grain growth behavior with temperature is explained in terms of the effect of Li₂O on interface-reaction-controlled grain growth and the critical driving force.     

Sintering Behavior and Surface Microstructure of PbO-Rich PbNi1/3Nb2/3O3–PbTiO3–PbZrO3 Ceramics

The sintering behavior and surface microstructure of PbNi_1/3Nb_2/3O₃–PbTiO₃–PbZrO₃ (PNiNb-PT-PZ) ceramics were investigated. The PNiNb-PT-PZ ceramics with the stoichiometric composition and the addition of excess lead oxide (PbO-rich ceramics) were sintered by liquid-phase sintering in accordance with the solution-reprecipitation mechanism at temperatures below the melting point of PbO. The temperature at which the liquid phase forms fell to near the eutectic point of the PbO–Nb₂O₅ and the PbO–TiO₂ system (868°C) with the addition of 5 mol% PbO. As the calcination temperature influenced the sinterability of the stoichiometric PNiNb-PT-PZ ceramic, unreacted PbO was considered to be the source of the liquid phase in the sintering of the stoichiometric powder. The secondary phase was observed at the surface of PbO-rich ceramics and was suggested to be a liquid phase expelled from inside the ceramic. A sintering scheme of PNiNb-PT-PZ ceramics was proposed, and the high sinterability of PNiNb-PT-PZ ceramics was attributed to the low formation temperature of the liquid phase.     

Tape Casting, Pressureless Sintering, and Grain Growth in Ti3SiC2 Compacts

In this work we demonstrate that fine Ti₃SiC₂ powders can be tape-cast and/or cold-pressed and pressureless-sintered in Ar- or Si-rich atmospheres to produce fully dense, oriented microstructures in which the basal planes are parallel to the surfaces. Carbon- and/or Si-rich environments suppress grain growth. In the case of the tape casting, the C-residue from binder burnout results in small core grains relative to the surface grains that can grow significantly. When sintering in high Si activities, titanium silicide phases form at the grain boundaries that slow grain growth. Annealing the latter in Ar at 1600°C, for extended periods (30 h), rids the samples of these grain-boundary phases, which in turn results in grain growth. The advantage of the latter process is that the final grain size distribution is more uniform from surface to bulk.     

Base-Metal-Electroded BaTiO3 Capacitor Materials with Duplex Microstructures

The effect of dopants and processing conditions on the dielectric properties of base-metal-electroded materials was investigated. BaTiO₃ materials simultaneously doped with MgO and Y₂O₃ additives can achieve small capacitance variation (Δ C / C ), which meets the X7R specification, when the proportion of additives is abundant enough and the materials are not over-fired. Presumably, small Δ C / C values of thus obtained materials are the result of the formation of core–shell structure, which requires stringent control of material processing conditions. In contrast, X7R-type materials can be obtained in a much wider processing window, when prepared by mixing two BaTiO₃ materials of suitable dielectric constant–temperature ( K – T ) characteristics. Duplexed materials prepared from these two end-point BaTiO₃ materials with ratios ranging from 3:1 to 1:2 exhibit K – T behavior within the X7R specification, provided that one of the components possesses flat K – T behavior. Moreover, the dielectric properties of these materials were simulated using a simplified microstructural model. Simulation results indicate that the effective dielectric constant of core–shell materials, ( K _e)_CS, varies significantly not only with the dielectric properties of cores and shells, but also with the shell-to-core thickness ratio, whereas the effective dielectric constant of duplexed materials, ( K _e)_D, can be maintained at a very small Δ C / C value for a wide range of end-point constituent ratios, which agrees very well with the measured K – T properties for the materials.     

Roles of Ba/Ti Ratios in the Dielectric Properties of BaTiO3 Ceramics

The effect of the Ba/Ti ratio on microstructure, dielectric/ferroelectric properties, and domain width was studied using optical microscopy, ɛ( T ) curves, D – E hysteresis, and transmission electron microscopy. Although Ti-excess samples showed abnormal grain growth and a decrease of room-temperature permittivity due to a liquid phase at grain boundaries, its ferroelectric properties were similar to those of stoichiometric BaTiO₃ ceramics. However, in Ba-excess samples, an increase of permittivity and ferroelectric properties different from those of stoichiometry were found. Changes in domain width and ferroelectric transition behavior indicated that the variation of dielectric properties was related to the internal stress. It is proposed that this internal stress originated from differences in the thermal expansion coefficient between the matrix and the second phase.     

Effect of MgO Doping on the Phase Transformations of BaTiO3

The successive phase transformations in MgO-doped BaTiO₃ were studied. Upon MgO doping, dielectric anomalies corresponding to lower phase transformations were broadened and depressed, while an anomaly for a cubic–tetragonal transformation remained and shifted to a lower temperature. XRD peak splitting upon tetragonality of BaTiO₃ was decreased, and the peaks exhibited abnormally broadened profiles which are different from the one for cubic BaTiO₃ above T _c. Raman spectroscopy revealed the existence of orthorhombic phase at room temperature for the solid solution with 0.5 mol% or more MgO. The temperature dependence of the Raman spectrum showed that orthorhombic and rhombohedral phases in MgO-doped BaTiO₃ were stabilized at higher temperatures than pure BaTiO₃.