Elasticity size effects in ZnO nanowires--a combined experimental-computational approach

Understanding the mechanical properties of nanowires made of semiconducting materials is central to their application in nano devices. This work presents an experimental and computational approach to unambiguously quantify size effects on the Young's modulus, E, of ZnO nanowires and interpret the origin of the scaling. A micromechanical system (MEMS) based nanoscale material testing system is used in situ a transmission electron microscope to measure the Young's modulus of [0001] oriented ZnO nanowires as a function of wire diameter. It is found that E increases from approximately 140 to 160 GPa as the nanowire diameter decreases from 80 to 20 nm. For larger wires, a Young's modulus of approximately 140 GPa, consistent with the modulus of bulk ZnO, is observed. Molecular dynamics simulations are carried out to model ZnO nanowires of diameters up to 20 nm. The computational results demonstrate similar size dependence, complementing the experimental findings, and reveal that the observed size effect is an outcome of surface reconstruction together with long-range ionic interactions.     

Mechanical elasticity of vapour-liquid-solid grown GaN nanowires

Mechanical elasticity of hexagonal wurtzite GaN nanowires with hexagonal cross sections grown through a vapour-liquid-solid (VLS) method was investigated using a three-point bending method with a digital-pulsed force mode (DPFM) atomic force microscope (AFM). In a diameter range of 57-135?nm, bending deflection and effective stiffness, or spring constant, profiles were recorded over the entire length of end-supported GaN nanowires and compared to the classic elastic beam models. Profiles reveal that the bending behaviour of the smallest nanowire (57.0?nm in diameter) is as a fixed beam, while larger nanowires (89.3-135.0?nm in diameter) all show simple-beam boundary conditions. Diameter dependence on the stiffness and elastic modulus are observed for these GaN nanowires. The GaN nanowire of 57.0?nm diameter displays the lowest stiffness (0.98?N?m(-1)) and the highest elastic modulus (400 ± 15?GPa). But with increasing diameter, elastic modulus decreases, while stiffness increases. Elastic moduli for most tested nanowires range from 218 to 317?GPa, which approaches or meets the literature values for bulk single crystal and GaN nanowires with triangular cross sections from other investigators. The present results together with further tests on plastic and fracture processes will provide fundamental information for the development of GaN nanowire devices.     

Examining the anomalous electrical characteristics observed in InN nanowires

Research interest in InN has intensified in recent years because of its unique material properties and promising applications in electronic and photonic devices. Measurements on InN nanowires presented by Chang et al., [J. Electron. Mater. 35, 738 (2006)] showed an anomalous resistance behavior in InN nanowires with diameters less than 90 nm. We examine possible theories presented in literature to explain this intriguing observation. We propose that the presence of a high density electron accumulation layer at the surface of thin InN nanowires is the most probable cause for the uncharacteristic relationship between the total measured resistance and the ratio of length-to-area. High density surface electron accumulation layer, characteristic of InN films and nanowire, promotes a surface conduction path distinct from the bulk conduction. For large diameter nanowires, bulk conduction is likely to be the dominant mechanism while surface conduction is proposed to play a major role for small diameter InN nanowires.     

Self-organized magnetic nanowire arrays based on alumina and titania templates

Densely packed arrays of magnetic nanowires have been synthesized by electrodeposition filling of nanopores in alumina and titania membranes formed by self-assembling during anodization process. Emphasis is made on the control of the production parameters leading to ordering degree and lattice parameter of the array as well as nanowires diameter and length. Structural, morphological and magnetic properties exhibited by nanowire arrays have been studied for several nanowire compositions, different ordering degree and for different nanowire aspect ratios. The magnetic behaviour of nanowires array is governed by the balance between different energy contributions: shape anisotropy of individual nanowires, the magnetostatic interaction of dipolar origin among nanowires, and magnetocrystalline and magnetoelastic anisotropies induced by the pattern templates. These novel nanocomposites, based on ferromagnetic nanowires embedded in anodic nanoporous templates, are becoming promising candidates for technological applications such as functionalised arrays for magnetic sensing, ultrahigh density magnetic storage media or spin-based electronic devices.     

The impact of nanocontact on nanowire based nanoelectronics

Nanowire-based nanoelectronic devices will be innovative electronic building blocks from bottom up. The reduced nanocontact area of nanowire devices magnifies the contribution of contact electrical properties. Although a lot of two-contact-based ZnO nanoelectronics have been demonstrated, the electrical properties bringing either from the nanocontacts or from the nanowires have not been considered yet. High quality ZnO nanowires with a small deviation and an average diameter of 38 nm were synthesized to fabricate more than thirty nanowire devices. According to temperature behaviors of current-voltage curves and resistances, the devices could be grouped into three types. Type I devices expose thermally activated transport in ZnO nanowires and they could be considered as two Ohmic nanocontacts of the Ti electrode contacting directly on the nanowire. For those nanowire devices having a high resistance at room temperatures, they can be fitted accurately with the thermionic-emission theory and classified into type II and III devices according to their rectifying and symmetrical current-voltage behaviors. The type II device has only one deteriorated nanocontact and the other one Ohmic contact on single ZnO nanowire. An insulating oxide layer with thickness less than 20 nm should be introduced to describe electron hopping in the nanocontacts, so as to signalize one- and high-dimensional hopping conduction in type II and III devices.     

Tailoring the vapor-liquid-solid growth toward the self-assembly of GaAs nanowire junctions

New insights into understanding and controlling the intriguing phenomena of spontaneous merging (kissing) and the self-assembly of monolithic Y- and T-junctions is demonstrated in the metal-organic chemical vapor deposition growth of GaAs nanowires. High-resolution transmission electron microscopy for determining polar facets was coupled to electrostatic-mechanical modeling and position-controlled synthesis to identify nanowire diameter, length, and pitch, leading to junction formation. When nanowire patterns are designed so that the electrostatic energy resulting from the interaction of polar surfaces exceeds the mechanical energy required to bend the nanowires to the point of contact, their fusion can lead to the self-assembly of monolithic junctions. Understanding and controlling this phenomenon is a great asset for the realization of dense arrays of vertical nanowire devices and opens up new ways toward the large scale integration of nanowire quantum junctions or nanowire intracellular probes.     

Assessing charge carrier trapping in silicon nanowires using picosecond conductivity measurements

Free-standing semiconductor nanowires on bulk substrates are increasingly being explored as building blocks for novel optoelectronic devices such as tandem solar cells. Although carrier transport properties, such as mobility and trap densities, are essential for such applications, it has remained challenging to quantify these properties. Here, we report on a method that permits the direct, contact-free quantification of nanowire carrier diffusivity and trap densities in thin (～25 nm wide) silicon nanowires-without any additional processing steps such as transfer of wires onto a substrate. The approach relies on the very different terahertz (THz) conductivity response of photoinjected carriers within the silicon nanowires from those in the silicon substrate. This allows quantifying both the picosecond dynamics and the efficiency of charge carrier transport from the silicon nanowires into the silicon substrate. Varying the excitation density allows for quantification of nanowire trap densities: for sufficiently low excitation fluences the diffusion process stalls because the majority of charge carriers become trapped at nanowire surface defects. Using a model that includes these effects, we determine both the diffusion constant and the nanowire trap density. The trap density is found to be orders of magnitude larger than the charge carrier density that would be generated by AM1.5 sunlight.     

Rational synthesis of ultrathin n-type Bi2Te3 nanowires with enhanced thermoelectric properties

A rational yet scalable solution phase method has been established, for the first time, to obtain n-type Bi(2)Te(3) ultrathin nanowires with an average diameter of 8 nm in high yield (up to 93%). Thermoelectric properties of bulk pellets fabricated by compressing the nanowire powder through spark plasma sintering have been investigated. Compared to the current commercial n-type Bi(2)Te(3)-based bulk materials, our nanowire devices exhibit an enhanced ZT of 0.96 peaked at 380 K due to a significant reduction of thermal conductivity derived from phonon scattering at the nanoscale interfaces in the bulk pellets, which corresponds to a 13% enhancement compared to that of the best n-type commercial Bi(2)Te(2.7)Se(0.3) single crystals (~0.85) and is comparable to the best reported result of n-type Bi(2)Te(2.7)Se(0.3) sample (ZT = 1.04) fabricated by the hot pressing of ball-milled powder. The uniformity and high yield of the nanowires provide a promising route to make significant contributions to the manufacture of nanotechnology-based thermoelectric power generation and solid-state cooling devices with superior performance in a reliable and a reproducible way.     

Mechanical characterization of nickel nanowires by using a customized atomic force microscope

A new experimental method to characterize the mechanical properties of metallic nanowires is introduced. An accurate and fast mechanical characterization of nanowires requires simultaneous imaging and testing of the nanowires. However, existing mechanical characterization techniques fail to accomplish this goal due either to the lack of imaging capability of the mechanical test setup or the difficulty of individual alignment and manipulation of single nanowires for each test. In this study, nanowire specimens prepared by an electroplating technique are located on a silicon substrate with trenches. A customized atomic force microscope is located inside a scanning electron microscope (SEM) in order to establish the visibility of the nanowires, and the tip of the atomic force microscope cantilever is utilized to bend and break the nanowires. The ability to visualize the nanowires in an SEM improves the speed and accuracy of the tests. Experimentally obtained force versus bending displacement curves are fitted into existing analytical formulations to extract the mechanical properties. Experimental results reveal that nickel nanowires have significantly higher strengths than their bulk counterparts, although their elastic modulus values are comparable to bulk nickel modulus values.     

Multicolored vertical silicon nanowires

We demonstrate that vertical silicon nanowires take on a surprising variety of colors covering the entire visible spectrum, in marked contrast to the gray color of bulk silicon. This effect is readily observable by bright-field microscopy, or even to the naked eye. The reflection spectra of the nanowires each show a dip whose position depends on the nanowire radii. We compare the experimental data to the results of finite difference time domain simulations to elucidate the physical mechanisms behind the phenomena we observe. The nanowires are fabricated as arrays, but the vivid colors arise not from scattering or diffractive effects of the array, but from the guided mode properties of the individual nanowires. Each nanowire can thus define its own color, allowing for complex spatial patterning. We anticipate that the color filter effect we demonstrate could be employed in nanoscale image sensor devices.     

The Faraday rotation angle of Ni nanowire arrays: its dependence on photon energy and nanowire size

The magneto-optical properties of Ni nanowire arrays embedded in anodic aluminum oxide templates are studied, for a selection of photon energies, as a function of their diameter and length for the first time. This was achieved by the determination of Stokes parameters of the transmitted light. The magneto-optical response is found to differ considerably from that of the bulk material. At all photon energies studied, a linear association of the Faraday rotation angle with nanowire length has been observed; moreover, a proportional relationship between rotation angle per unit length and nanowire diameter has also been also observed, consistent with our earlier work on Fe and Co nanowires. The relationship between the Faraday rotation angle per unit length with different nanowire diameters and photon energy has been found to exhibit clear spectroscopic structure.     

Magnetic properties of single-crystalline CoSi nanowires

We have observed unusual ferromagnetic properties in single-crystalline CoSi nanowire ensemble, in marked contrast to the diamagnetic CoSi in bulk. High-density freestanding CoSi nanowires with B20 crystal structure are synthesized by a vapor-transport-based method. The reaction of cobalt chloride precursor with a Si substrate produces high-aspect-ratio CoSi nanowires. The high-resolution transmission electron microscopy and electron diffraction studies reveal superlattice structure in CoSi nanowires with twice the lattice parameter of simple cubic CoSi lattice. The zero-field-cooled and field-cooled (ZFC-FC) measurements from the nanowire ensemble show freezing of the disordered surface spins at low temperatures. The magnetoresistance (MR) measurements of single nanowire devices show a negative MR whose magnitude gets larger at lower temperatures.     

Finite-size effect on magnetic properties in iron sulfide nanowire arrays

We report the size effect on the magnetic properties in Fe(7)S(8) nanowire arrays. Samples with diameters in the range of 50-200?nm have been prepared by electrodeposition with AAO films. The M?ssbauer measurement results show that four parameters (hyperfine fields, isomer shift, quadrupole splitting, full width at half-maximum) increased with decreasing the diameter of the nanowires. The magnetic properties were investigated. The hysteresis loop shape and the magnetization are dependent on the diameter of the nanowires. The thermomagnetic measurements on the as-synthesized nanowire samples and the corresponding bulk display a mixed-type curve and a Weiss-type curve, respectively.     

Synthesis of dense, single-crystalline CrO2 nanowire arrays using AAO template-assisted chemical vapor deposition

High-density, vertically aligned CrO(2) nanowire arrays were obtained via atmospheric-pressure CVD assisted by AAO templates. The CrO(2) nanowire arrays show remarkably enhanced coercivity compared with CrO(2) films or bulk. It was found that the length of the nanowires is greatly influenced by the pore diameter of the AAO template used. The growth mechanism and the pore size dependence of the CrO(2) nanowire arrays are discussed. The present method provides a useful approach for the synthesis of CrO(2) nanowire arrays. Such highly ordered nanowire arrays within an AAO template may have important applications in ultrahigh-density perpendicular magnetic recording devices and the mass production of spintronic nanodevices.     

High-resolution detection of Au catalyst atoms in Si nanowires

The potential for the metal nanocatalyst to contaminate vapour-liquid-solid grown semiconductor nanowires has been a long-standing concern, because the most common catalyst material, Au, is highly detrimental to the performance of minority carrier electronic devices. We have detected single Au atoms in Si nanowires grown using Au nanocatalyst particles in a vapour-liquid-solid process. Using high-angle annular dark-field scanning transmission electron microscopy, Au atoms were observed in higher numbers than expected from a simple extrapolation of the bulk solubility to the low growth temperature. Direct measurements of the minority carrier diffusion length versus nanowire diameter, however, demonstrate that surface recombination controls minority carrier transport in as-grown n-type nanowires; the influence of Au is negligible. These results advance the quantitative correlation of atomic-scale structure with the properties of nanomaterials and can provide essential guidance to the development of nanowire-based device technologies.     

Controllable template synthesis of superconducting Zn nanowires with different microstructures by electrochemical deposition

A systematic study was conducted on the fabrication, structural characterization, and transport properties of Zn nanowires with diameters between 40 and 100 nm. Zinc nanowires were fabricated by electrodepositing Zn into commercially available polycarbonate (PC) or anodic aluminum oxide (AAO) membranes. By controlling the electrodeposition process, we found that the nanowires can be single-crystal, polycrystalline Zn, crystalline Zn/nanocrystalline ZnO composites, or entirely ZnO. The microstructure and chemistry was characterized by using transmission electron microscopy. Transport studies on single-crystal or polycrystalline Zn nanowire arrays embedded inside the membrane showed that the superconducting transition temperature, Tc, is insensitive to the nanowire diameter and morphology. The superconductivity shows a clear crossover from bulklike to quasi-1D behavior, as evidenced by residual low-temperature resistance, when the diameter of the wires is reduced to 70 nm (20 times smaller than the bulk coherence length).     

Fabrication of field-effect transistors from hexathiapentacene single-crystal nanowires

This paper describes a simple, solution-phase route to the synthesis of bulk quantities of hexathiapentacene (HTP) single-crystal nanowires. These nanowires have also been successfully incorporated as the semiconducting material in field-effect transistors (FETs). For devices based on single nanowires, the carrier mobilities and current on/off ratios could be as high as 0.27 cm2/Vs and >103, respectively. For transistors fabricated from a network of nanowires, the mobilities and current on/off ratios could reach 0.057 cm2/Vs and >104, respectively. We have further demonstrated the use of nanowire networks in fabricating transistors on mechanically flexible substrates. Preliminary results show that these devices could withstand mechanical strain and still remain functional. The results from this study demonstrate the potential of utilizing solution-dispersible, nanostructured organic materials for use in low-cost, flexible electronic applications.     

合成和表征NiFe2O4纳米线阵列

采用真空灌注结合溶胶-凝胶和氧化铝模板法,在多孔氧化铝模板中制备了平均直径为50 nm的NiFe2O4纳米线阵列.X射线衍射结果显示所制备的纳米线是纯相的NiFe2O4纳米线,透射电镜和电子衍射的结果显示已制备的纳米线是多晶的且表面光滑,场发射扫描电镜图片显示纳米线是大面积且平行有序的、纳米线的长度和所用的氧化铝模板的厚度相当.磁测量的结果显示此纳米线阵列有形状各向异性,同块状材料相比矫顽力有所增强.对纳米线的生长机理做了简单的讨论.     

Bringing order to the world of nanowire devices by phase shift lithography

Semiconductor nanowire devices have several properties which match future requirements of scaling down the size of electronics. In typical microelectronics production, a number of microstructures are aligned precisely on top of each other during the fabrication process. In the case of nanowires, this mandatory condition is still hard to achieve. A technological breakthrough is needed to accurately place nanowires at any specific position and then form devices in mass production. In this article, an upscalable process combining conventional micromachining with phase shift lithography will be demonstrated as a suitable tool for nanowire device technology. Vertical Si and ZnO nanowires are demonstrated on very large (several cm(2)) areas. We demonstrate how the nanowire positions can be controlled, and the resulting nanowires are used for device fabrication. As an example Si/ZnO heterojunction diode arrays are fabricated. The electrical characterization of the produced devices has also been performed to confirm the functionality of the fabricated diodes.     

以修饰的PAA模板制备Ni纳米线的研究

采用直流电沉积法制备了Ni纳米线,用SEM和TEM测试手段观察产物形貌,结果表明,合成的纳米线阵列具有排列有序、彼此平行等特点,XRD、EDX、SQUID测试手段研究了产物化学成份和磁学性质,实验发现,Ni纳米线的矫顽力在退火前后分别为67 Oe和774 Oe。