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GaN p-i-n紫外探测器的研制 总被引:1,自引:1,他引:0
研制了一种GaN p-i-n型单元器件,详细地讨论了该器件的制备工艺,并对该器件进行了光电性能测试.测试结果表明,器件的正向开启电压在2 V左右,零偏动态电阻R0约为1010~1011 Ω,最大峰值响应率在365 nm处为0.18~0.21 A/W,器件的上升响应时间和下降时间分别为2.8和13.4 ns. 相似文献
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在蓝宝石衬底上,用金属有机物气相沉积(MOCVD)法外延生长AlGaN/GaN异质结样品。溅射Ti/Al/Ni/Au和Ni/Au金属膜,在氮气气氛中高温快速退火,分别与样品形成欧姆接触和肖特基接触。随着退火时间的增加,金属一半导体金属(MSM)结构的I-V特性曲线保持良好的对称性,但C-V曲线逐渐失去其对称性。MSM探测器的紫外响应曲线具有良好的对比度和选择性,出现明显的光电导增益效应。 相似文献
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美国哥达德空间飞行中心最近研制了一种基于氮化镓的紫外探测器线列,这种紫外探测器线列对大部分可见光光谱是盲目的,其截止波长为370 nm.它能在存在大量可见光辐射的情况下进行紫外光成像,而无需用大面积的挡板来抑制杂散光或者用昂贵的滤光片来阻挡可见光.该GaN探测器列阵的体积、重量及功耗比现在用于深测紫外光的光电倍增管和微道板低一个数量级,它还能够在较低的电压下工作.此外,GaN材料比较坚固,用它制备探测器比较容易. 相似文献
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GaN/6H-SiC紫外探测器的光电流性质研究 总被引:5,自引:4,他引:1
本文研究了以金属有机物化学气相沉积方法生长在6H-SiC衬底上的GaN外延薄膜制成的光导型紫外探测器的光电流性质.通过对其光电流谱的测量,获得了GaN探测器在紫外波段从250~365nm近于平坦的光电流响应曲线,并且观察到在~3.4eV带边附近陡峭的截止边,即当光波长在从365nm变到375nm的10nm区间内,光电流信号下降了3个数量级.在360nm波长处,我们测得GaN探测器在5V偏压下光电流响应度为133A/W,并得到了其响应度与外加偏压的关系.通过拟合光电流信号强度与入射光调制频率的实验数据 相似文献
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本文分析了RCE探测器性能增强的基本原理;推导了布拉格反射镜的反射机理及其反射传输矩阵模型;介绍了MSMRCE紫外光电探测器的结构及其相关性能;指出了GaN基RCE紫外探测器目前所面临的问题以及可能解决的方案。 相似文献
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研究了GaN/AlGaN异质结背照式p-i-n结构可见盲紫外探测器的制备与性能。GaN/AlGaN外延材料采用金属有机化学气相沉积(MOCVD)方法生长,衬底为双面抛光的蓝宝石,缓冲层为AlN,n型层采用厚度为0.8 μm的Si掺杂Al0.3Ga0.7N形成窗口层,i型层为0.18 μm的非故意掺杂的GaN,p型层为0.15 μm的Mg掺杂GaN。采用Cl2、Ar和BCl3感应耦合等离子体刻蚀定义台面,光敏面面积为1.96×10-3 cm2。可见盲紫外探测器展示了窄的紫外响应波段,响应区域为310~365 nm,在360 nm处响应率最大,为0.21 A/W,在考虑表面反射时,内量子效率达到82%;优质因子R0A为2.00×108 Ω·cm2,对应的探测率D*=2.31×1013 cm·Hz1/2·W-1;且零偏压下的暗电流为5.20×10-13 A。 相似文献
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Z. C. Huang D. B. Mott P. K. Shu J. C. Chen D. K. Wickenden 《Journal of Electronic Materials》1997,26(3):330-333
Metal-semiconductor-metal photoconductors made on GaN usually exhibit a slow response time and a low responsivity. We have
carried out a systematic study on the performance of the photoconductors made from GaN grown by metalorganic chemical vapor
deposition using different growth conditions and have found that both response time and responsivity of the GaN detector are
improved when the material is grown using increased ammonia flow rates. The best GaN ultraviolet photoconductive detector
shows a response time of 0.3 ms and a responsivity of 3200 A/W at 365 nm under an operation bias of 10 V. We attribute this
improvement to the reduction of the point defects in GaN. 相似文献
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Two kinds of metal-semiconductor-metal (MSM) Schottky UV detectors with and without an insertion layer of transparent conductive nanocrystalline oxide were fabricated on Fe-doped semi-insulating GaN epilayers. It is found that the optical responsivity of the detectors can be significantly improved by two orders of magnitude by inserting a thin layer of Ga-doped nanocrystalline ZnO (GZO) between metal electrode and Fe-doped GaN. Such improvement is suggested to be associated with the valence-band discontinuities and efficient suppression recombination of traps induced by Fe impurities in GaN due to the insertion of a thin layer of GZO. 相似文献
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A. Teke S. Dogan L. He D. Huang F. Yun M. Mikkelson H. Morkoç S. K. Zhang W. B. Wang R. R. Alfano 《Journal of Electronic Materials》2003,32(5):307-311
The spectral response of back-surface-illuminated p-GaN-i-GaN/AlGaN multiplequantum well (MQW)-n-AlGaN ultraviolet (UV) photodetector
is reported. The structure was grown by molecular-beam epitaxy on a c-plane sapphire substrate. A MQW is introduced into the
active region of the device to enhance the quantum efficiency caused by the high absorption coefficient of the two-dimensional
(2-D) system. Another advantage of using MQW in the active region is the ability to tune the cutoff wavelength of the photodetector
by adjusting the well width, well composition, and barrier height. The zero-bias peak responsivity was found to be 0.095 A/W
at 330 nm, which corresponds to 36% quantum efficiency from as-grown p-i-n GaN/AlGaN MQW devices. An anomalous effect, occurring
in responsivity as a negative photoresponse in the spectra peaked at 362 nm because of poor ohmic contact to p-type GaN, was
also observed. Etching the sample in KOH for 30 sec before fabrication removed the surface contaminants and improved the surface
smoothness of the as-grown sample, resulting in significant improvement in the device performance, giving a peak responsivity
of 0.12 A/W. The device has a quantum efficiency of 45% at 330 nm without the anomalous negative photocurrent. 相似文献
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J. C. Carrano T. Li C. J. Eiting R. D. Dupuis J. C. Campbell 《Journal of Electronic Materials》1999,28(3):325-333
We report on the temporal and the frequency response of both metal-semiconductor-metal (MSM) and p-i-n ultraviolet photodetectors
fabricated on single-crystal GaN. The best MSM devices show a fast 10–90% rise-time of ∼28 psec under comparatively low ultraviolet
excitation of ∼0.1 W/cm2 averagerirradiance. The fast-Fourier transform (FFT) of the pulse response data indicates a bandwidth, f3dB, of ∼3.8 GHz at a reverse bias of 25 V. This agrees well with the direct frequency response measurement value of ∼3.5 GHz.
For the p-i-n devices, we measured a rise-time of ∼43 psec at 15 V reverse bias for a 60 μm diameter mesa with 1 μm thick
intrinsic region. The FFT of the p-i-n pulse response obtains f3dB ≈1.4 GHz. Analysis in terms of reverse bias and geometric scaling indicates that the MSM photodetectors are transit-time
limited. The p-i-n devices also show evidence of transit-time limited effects based on trends with respect to reverse bias
and intrinsic region thickness. However, our larger area p-i-n devices show clear evidence of RC-limited behavior. Modeling
of the temporal behavior indicates that a slow component in the time and frequency response data is a consequence of the hole
drift velocity. We have also found preliminary evidence of microplasmic effects in the p-i-n devices. 相似文献
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采用金属有机物化学气相沉积(MOCVD)方法在蓝宝石衬底上制备了p-GaN单晶薄膜.高温(>1100℃)处理及未处理样品的双晶摇摆曲线测试表明高于1150℃会使材料的晶体质量明显变差,这为平面型紫外探测器制备中的部分注入激活条件提供了选择依据.通过TRIM软件优化了注入条件,在选择性注入改型材料上成功制备了平面GaN ... 相似文献
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We report on characterization of a set of AlGaN/GaN multiple-quantum-well (MQW) photodetectors. The model structure used in the calculation is the p-i-n heterojunction with 20 AlGaN/GaN MQW structures in i-region. The MQW structures have 2 nm GaN quantum well width and 15 nm AlxGa1−xN barrier width. The cutoff wavelength of the MQW photodetectors can be tuned by adjusting the well width and barrier height. Including the polarization field effects, on increasing Al mole fraction, the transition energy decreases, the total noise increases, and the responsivity has a red shift, and so the detectivity decreases and has a red shift. 相似文献