共查询到20条相似文献,搜索用时 62 毫秒
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超高阻薄层硅外延片可用于制备光电探测器的二极管、瞬态电压抑制二极管等分立器件。利用E200型单片外延炉在直径为150 mm的重掺As硅单晶衬底上制备了参数可控且均匀性高的外延层。采用多次本征生长技术,在重掺As硅衬底边缘形成掺杂原子耗尽层,有效减少了重掺As硅衬底的自掺效应。同时应用低温外延技术、无HCl抛光技术,研制出超高阻薄层硅外延片,外延层电阻率为1 093Ω·cm,外延层厚度为12.06μm,满足外延层厚度(12±1)μm、外延层电阻率大于1 000Ω·cm的设计要求,片内电阻率不均匀性为4.36%,片内厚度不均匀性为0.5%。外延片已用于批量生产。 相似文献
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《固体电子学研究与进展》2017,(5)
利用PE3061D型平板式外延炉,在150mm的重掺As的硅单晶衬底上采用化学气相沉积(CVD)方法制备参数可控且高均匀性的外延层,通过聚光灯、原子力显微镜(AFM)、傅里叶变换红外光谱仪(FT-IR)、汞探针电容-电压测试仪(Hg CV)等测试设备分别研究了外延层的表面形貌、微粗糙度、厚度、电阻率以及均匀性参数。采用了基座浅层包硅技术、周期性滞留层杂质稀释技术、高温快速二次本征生长技术、温场流场调控技术等新型工艺技术,使外延层厚度满足(15±2%)μm,电阻率满足(15±2%)Ω·cm的设计要求,片内厚度和电阻率不均匀性达到<2%的水平。制备的硅外延材料应用于FRED的试产,击穿电压高于125V,晶圆的成品率达到90%以上,满足了120VFRED器件使用要求,实现了自主可控。 相似文献
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8英寸(1英寸=2.54 cm)薄层硅外延片的不均匀性是制约晶圆芯片良率水平的瓶颈之一.研究了硅外延工艺过程中影响薄外延层厚度和电阻率均匀性的关键因素,在保证不均匀性小于3%的前提下,外延层厚度和电阻率形成中间低、边缘略高的“碗状”分布可有效提高晶圆的良率水平.通过调整生长温度和氢气体积流量可实现外延层厚度的“碗状”分布,但调整温区幅度不得超过滑移线的温度门槛值.通过提高边缘温度来提高边缘10 mm和6 mm的电阻率,同时提高生长速率以提高边缘3 mm的电阻率,获得外延层电阻率的“碗状”分布,8英寸薄层硅外延片的的边缘离散现象得到明显改善,产品良率也有由原来的94%提升至98.5%,进一步提升了8英寸薄层硅外延片产业化良率水平. 相似文献
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功率VDMOS器件用硅外延材料研制 总被引:1,自引:1,他引:0
文章阐述了硅功率VDMOS器件的基本原理和器件结构,也展现了作为电力电子器件其广阔的应用领域,提出了功率VDMOS器件对硅外延材料的要求和发展方向。依据功率器件对外延片的要求,通过优化外延工艺程序和优化外延工艺参数,消除或减弱了自掺杂对电阻率均匀性的影响,消除了过渡区对厚度均匀性的影响,也较好地控制了外延层中的结构缺陷... 相似文献
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The article describes a model representation of radar probing data in form of a mixture of background and target samples, which is the sum of two random variables with very different parameters. For model development we research the behavior of the central moments of the distribution mix without assuming the distribution law form. An example it is described the detection of the signal at the output of compression system of chirp ionosonde. 相似文献
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解决IP网QoS问题是目前通信领域的研究热点之一.虽然研究已经取得了一定的进展,但人们对于IP 网QoS本身的含义及相关的问题还有着不同的理解.本文将从IP网QoS的定义入手讨论相关的一些问题以及解决IP网QoS问题所做的各种努力. 相似文献
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《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》1968,56(6):1024-1032
Assuming that visual responses are due to the action of particles on the membrane of the visual cells, the stochastic variability of the response should be a function of the number of particles producing it. Quantitative predictions can be made with the aid of a model proposed in previous articles. It is found that responses produced in visual cells of Limulus by absorption of a single photon have the stochastic properties which would be expected if the response to one photon were brought about by 25 particles. It is concluded from this that the processes leading to visual responses produce multiplication of particles. The effects of temperature and of metabolic poisons suggest that these processes are of chemical nature. 相似文献
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By means of exact conformal mapping method we have defined character of dependence of squares amounts of angular part of film
element on angled part dimension. We propose relations, approximating obtained dependence. Calculation results and experimental
researches of large-scale models are represented. 相似文献
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Moshrefzadeh R.S. Radcliffe M.D. Lee T.C. Mohapatra S.K. 《Lightwave Technology, Journal of》1992,10(4):420-425
The temperature dependence of refractive index of polymer films was determined for a number of slab waveguides by a grating coupling method. This dependence was examined as a function of parameters such as molecular weight and glass transition temperature of the polymer. Temperature-induced changes in N TE-N TM , N being the effective index, were studied systematically for different slab waveguide compositions. It is shown that with proper device design and choice of polymeric materials, thermal effects can be reduced 相似文献
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罗晓羽 《信息技术与标准化》2008,(6):37-39
论述了推进电子行业标准制修订项目计划管理信息化的必要性.并提出了具体措施;详细介绍了电子行业标准制修订项目计划管理数据库的设计思路和实现方法.阐述了对后续工作的几点思考. 相似文献
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对影响镍镀层内应力的因素做了介绍和分析,提出了对收缩应力的一种解释,提供了排除这些因素影响的方法,指出重视镀液的管理是减少各种影响内应力因素的主要办法。 相似文献
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A. M. Emel’yanov 《Semiconductors》2010,44(9):1134-1139
A method for analyzing the luminescence spectra of semiconductors is suggested. The method is based on differentiation of
the spectra. The potentialities of the method are demonstrated for luminescence in the region of the fundamental absorption
edge of Si and SiGe alloy single crystals. The method is superior in accuracy to previously known luminescence methods of
determining the band gap of indirect-gap semiconductors and practically insensitive to different conditions of outputting
radiation from the sample. 相似文献