ISO/IEC JTC1/SC24伦敦会议快讯

2009年7月6～10日在英国伦敦召开了ISO／IEC JTC1／SC24全会,来自澳大利亚、中国、日本、韩国、英国和美国等国家的18位代表以及Web3D社团、SEDRIS、SC29、TC211、DIGWG等联络组织的代表参加了会议。本次会议由WG6、WG7、WG8工作组会议、工作组全会和SC24全会组成,我国代表团参加了所有会议。     

ISO/IEC JTC1/SC32数据管理与交换领域标准国际动态

2010年5月17～28日,LSO／IEC JTG1／SC32工作组会议及全体会议在中国昆明召开,来自中国、日本、韩国、美国、英国、加拿大、德国共7个国家的70位代表参加了本次会议,中国代表团由工业和信息化部电子工业标准化研究所、中国标准化研究院、武汉大学等单位的23名代表组成。国家标准化管理委员会作为ISO／IEC,JTC1中国国家委员会承办了本次会议。     

ISO/IEC JTC1/SC32数据管理与交换领域标准最新动态

2009年6月15～26日,ISO／IEC JTC1／SC32工作组会议及全体会议在韩国召开,来自8个国家的60位代表参加了本次会议,主办方为韩国技术标准局（KATS）。ISO／IEC JTC1／SC32主要负责本地及分布式信息系统环境的数据管理标准的研制、发布和推广,下设4个工作组：电子业务、元数据、数据库语言、SQL多媒体和应用领域的标准的研发工作。中国代表担任WG1会议召集人和WG2项目编辑。     

ISO/IEC JTC1/SC28办公设备领域标准动态

2009年6月2～12日,ISO／IEC JTC1／SC28（办公设备）AWG（总体组）、WG2（耗材工作组）、WG3（生产率工作组）、WG4（图像质量工作组）112作组会议及20次全会在韩国釜山召开,来自日本、中国、美国、德国、韩国、奥地利、俄罗斯等国家的代表参加会议。     

2009年ISO/IEC JTC1/SC7软件工程领域全会议题

2009年5月24～29日,ISO／IEC JTC1／SO7（软件工程）2009年全会在印度召开,来自中国、美国、英国、澳大利亚、日本、韩国等26个国家和地区的197名代表参加本次会议。本次会议主要包括SC7全会及下属工作组和特别工作组会议,确定了SC7下一步工作计划、成立的专门工作组和研究组及2010年的全会计划。     

IEC/TC86会议议题

IEC／TC86（纤维光学）及其分技术委员会和工作组会议于2009年10月11～16日在以色列特拉维夫召开,我国代表参加了SC86A／WG1、SC86B、SC86A、SC86C和TC86等会议。     

2008年度CCSA联络员工作会议圆满结束

2008年9月26日～27日，中国通信标准化协会2008年度联络员工作会议在贵阳市召开。有来自协会各会员／观察员单位，以及网员单位共计110位代表出席了本次会议。会上，首先由潘峰副秘书长代表周宝信秘书长向参加会议的代表，报告了协会2008年上半年标准任务计划的落实和完成情况，以及协会今年在机制改革和创新、标准信息服务、标准推进和宣贯培训、会员发展等方面取得的进展情况。     

EC／TC111 WG3有害物质检测方法新进展

2010年4月14～16日，IEC／TC111 WG3工作组在日本京都召开了第10次工作组会议，来自八个国家的28位代表参加了会议。中国电子技术标准化研究所程涛、广东出八境检验检疫局技术中心郑建国、宁波出入境检验检疫局技术中心陈建国、纳优北京有限公司杨李锋和北京吉天仪器有限公司刘霁欣五位专家代表中国出席会议。     

ISO/IEC JTC1/SC28办公设备领域标准快讯

2009年6月2～12日,ISO／IECJTC1／SC28（办公设备）第20次全会及各工作组会议在韩国釜山召开,来自日本、中国、美国、德国、韩国、奥地利、俄罗斯等国家成员体的代表出席了会议。     

ISO/IEC JTC1/SC6数据通信领域新动向

2009年6月1-5日,ISO／IEC JTC1／S06全会在日本东京召开,参加此次会议的有11个国家以及来自ECMA international、ITU—T和IEEE LMSC等联络组织的代表。中国代表团团长为工业和信息化部电子工业标准化研究所徐冬梅。     

Performance improvement in tensile-strained In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As metamorphic HEMT

This paper proposes a In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As (x=0.3-0.5-0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.     

Very low-noise Al/sub 0.3/Ga/sub 0.7/As/Ga/sub 0.65/In/sub 0.35/As/GaAs single quantum-well pseudomorphic HEMTs

AlGaAs/GaInAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700 mS/mm. At 18 GHz, a minimum noise figure of 0.55 dB with 15.0 dB associated gain was measured. At 60 GHz, a minimum noise figure as low as 1.6 dB with 7.6 dB associated gain was also obtained. This is the best noise performance yet reported for GaAs-based HEMTs.<>     

A 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was /spl sim/2 and /spl sim/300 nA, and the standard deviation was /spl sim/0.19 and /spl sim/60 nA at unity gain (V/sub bias/ = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 /spl mu/m. It was /spl sim/57% and /spl sim/45% at 1.3 and 1.55 /spl mu/m, respectively. A bandwidth of 13 GHz was achieved at low gain.     

Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) doped-channel field-effect transistors (DCFET's)

The properties of both lattice-matched and strained doped-channel field-effect transistors (DCFET's) have been investigated in AlGaAs/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) heterostructures with various indium mole fractions. Through electrical characterization of grown layers in conjunction with the dc and microwave device characteristics, we observed that the introduction of a 150-/spl Aring/ thick strained In/sub 0.15/Ga/sub 0.85/As channel can enhance device performance, compared to the lattice-matched one. However, a degradation of device performance was observed for larger indium mole fractions, up to x=0.25, which is associated with strain relaxation in this highly strained channel. DCFET's also preserved a more reliable performance after biased-stress testings.<>     

Morphological and electrical characterization of SixCryCzBv thin films

Si_xCr_yC_zB_v thin films with several compositions have been studied for integration of high precision resistors in 0.8 μm BICMOS technology. These resistors, integrated in the back-end of line, have the advantage to provide high level of integration and attractive electrical behavior in temperature, for analog devices. The film morphology and the structure have been investigated through transmission electron microscopy analysis and have been then related to the electrical properties on the base of the percolation theory. According to this theory, and in agreement with experimental results, negative thermal coefficient of resistance (TCR) has been obtained for samples with low Cr content, corresponding to a crystalline volume fraction below the percolation threshold.Samples with higher Cr content exhibit, instead, a variation of the TCR as a function of film thickness: negative TCR values are obtained for thickness lower than 5 nm, corresponding to a crystalline volume fraction below the percolation threshold; positive TCR are obtained for larger thickness, indicating the establishment of a continuous conductive path between the Cr rich grains. This property seems to be determinant in order to assure the possibility to obtain thin film resistors almost independent on the temperature.     

Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs

We report an Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 /spl times/100 /spl mu/m HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (f/sub T/) of 12 GHz and a peak power gain cutoff frequency (f/sub max/) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.     

Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices

Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performances of TiO₂ and TaO₂ nonvolatile memristive devices were compared and the factors that make TaO₂ memristive devices better than TiO₂ memristive devices were studied. TaO₂ memristive devices have shown better endurance performances (10⁸ times more switching cycles) and faster switching speed (5 times) than TiO₂ memristive devices. Electroforming of TaO₂ memristive devices requires~4.5 times less energy than TiO₂ memristive devices of a similar size. The retention period of TaO₂ memristive devices is expected to exceed 10 years with sufficient experimental evidence. In addition to comparing device performances, this article also explains the differences in physical device structure, switching mechanism, and resistance switching performances of TiO₂ and TaO₂ memristive devices. This article summarizes the reasons that give TaO₂ memristive devices the advantage over TiO₂ memristive devices, in terms of electroformation, switching speed, and endurance.     

Electrooptic ferroelectric Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films

We report on waveguiding and electrooptic properties of epitaxial Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films grown by radio-frequency magnetron sputtering on Al/sub 2/O/sub 3/(11_02) single crystal substrates. High optical waveguiding performance has been demonstrated in infrared and visible light. The in-plane electrooptic effect has been recorded in transmission using a transverse geometry. At dc fields, the effective linear electrooptic coefficient was determined to 28 pm/V, which is promising for modulator applications.