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本文论述了国外开发的几种片叠层压敏电阻的结构,特性及当前的发展方向,介绍了这类压敏电阻器在集成电路保护,汽车电路保护和CMOS器件保护等方面的应用。 相似文献
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Varistor Behavior at Twin Boundaries in ZnO 总被引:4,自引:0,他引:4
Benjamin A. Haskell Shukri J. Souri Martin A. Helfand 《Journal of the American Ceramic Society》1999,82(8):2106-2110
The electrical behavior of commercial ZnO varistor devices has been examined with voltage contrast microscopy and point contact dc electrical measurements. Nonlinear voltage-dependent behavior has been observed across both of the major crystalline boundary types present in the system: Bi2 O3 layer containing ZnO grain boundaries (or grain boundaries) and antimony spinel layer internal ZnO inversion twin boundaries (or twin boundaries). Twin boundaries, which bisect practically every grain in a typical commercial device, possess potential barriers with higher average breakdown voltages than do grain boundaries. Certain zinc antimonate spinel (Zn7 Sb2 O12 ) grains are electrically isolated from the matrix, whereas others are conductive within the matrix. 相似文献
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ZnO压敏电阻器的性能及发展 总被引:3,自引:0,他引:3
简要回顾了ZnO压敏电阻器的历史,阐述了ZnO压敏电阻器的性能以及当前基础性研究的现状,并对其发展进行了展望。研究了Bi2O3和TiO2的掺杂对低压ZnO压敏电阻性能和微观结构的影响规律,从理论上分析了Bi2O3和TiO2添加剂的作用机理。为ZnO压敏电阻的低压化提供了理论依据和方法。 相似文献
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Development of Functional Microstructure during Sintering of a ZnO Varistor Material 总被引:4,自引:0,他引:4
The effects of sintering time and rate of cooling on the microstructure and current/voltage characteristics of a ZnO varistor material have been investigated. The results provide information about the development of microstructure during sintering and have been interpreted in terms of the role which microstructure plays in the determination of electrical properties. A continuous network of intergranular Bi2 O3 , which lies mainly along the triple junctions between ZnO grains, can give a substantial contribution to the leakage current. The conductivity of this skeleton depends upon its internal microstructure. 相似文献
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Sintering Temperature Dependence of Grain Boundary Resistivity in a Rare-Earth-Doped ZnO Varistor 总被引:1,自引:0,他引:1
Jingnan Cai Yuan-Hua Lin Ming Li Ce-Wen Nan Jinliang He Fangli Yuan 《Journal of the American Ceramic Society》2007,90(1):291-294
We present a rare-earth-doped ZnO ceramic with nonohmic electrical properties. Analysis of the microstructure and composition indicates that the ceramic is composed of the main phase of ZnO and the second phase of rare-earth oxides (e.g., Dy2 O3 , Pr6 O11 , Pr2 O3 ). The average grain size is markedly increased from 3 to 18 μm, with an increase in the sintering temperature from 1150° to 1350°C. The corresponding varistor voltage and nonlinear coefficient decrease from 1014 to 578 V/mm, and from 15.8 to 6.8, respectively. The resistivity of grain and grain boundary evaluated by the complex impedance spectrum indicates that the resistivity of the grain is approximately constant (∼103 Ω), and the resistivity of the grain boundary decreases. The relative dielectric permittivity of the sintered ceramic samples is much larger than that of pure ZnO ceramic, which should be ascribed to the internal boundary layer capacitance effect. 相似文献
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An atomistic simulation technique has been used to predict the spatial arrangement of the dopant species sodium, lithium, and chlorine within the zinc oxide lattice. The alkaline oxides are preferentially incorporated via a self-compensating mode, forming interstitial cations which hinder the migration of zinc interstitials and hence slow the degradation of the varistor. The addition of chloride ions is shown to negate this effect by forming sodium and chloride substitutional defects rather than any species involving sodium interstitial ions. 相似文献
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在最高温度950℃、1050℃、1150℃、1250℃4个温度下,采用2种配方:98.3%ZnO-0.7%Bi2O3-1.0%TiO2(摩尔分数),相应的无TiO2配方99.3%ZnO-0.7%Bi2O3(摩尔分数),分别制备样品进行对比研究。发现前者在950℃和1050℃的烧结温度下,没有形成明显Bi2O3偏聚的晶界;在1150℃和1250℃下,却形成了清晰的富铋晶界。而后者在950℃、1050℃、1150℃、1250℃4个温度下均形成了非常明显且清晰可辨的ZnO晶粒和晶界。通过XRD及相对峰强分析,发现了Bi2O3和TiO2在低压ZnO压敏电阻中的相变过程,并对其在烧结过程中的作用提出新的解释。 相似文献
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用环境扫描电子显微镜(ESEM)、X射线衍射(XRD)和X射线能谱(EDXS)等研究了水基流延片式ZnO压敏电阻器的低温共烧工艺及其对微观结构和电学性能的影响规律。ESEM分析结果表明:当等静压压力为60 MPa时,Ag电极与流延膜生坯界面结合紧密,Ag电极分布连续,900℃共烧时,未出现开裂、分层,两者收缩率接近。EDXS和XRD分析结果表明:900℃共烧时,Ag在片式压敏电阻器中以单质形式存在,流延膜与Ag电极化学兼容性良好,且在共烧界面处未发现有明显的Ag离子扩散。该流延膜可以与Ag电极在900℃时实现低温共烧,用此制备的片式ZnO压敏电阻器具有良好的压敏性能:压敏电压V1mA=6.1 V,非线性系数α=28.1,漏电流IL=0.15μA。 相似文献
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A ZnO varistors in series connected with a semi‐insulating GaAs photoconductive switches (SI‐GaAs PCSS's), a test method for ultrafast pulse response characteristics of ZnO varistor ceramics with DC bias was presented for the first time. The DC voltage distribution of the PCSS's and the varistors was measured in a dark state and the pulse response characteristics of the ZnO varistor ceramics was examined by a nanosecond laser pulse illuminating the PCSS's. The results indicate that the electric pulse output from the varistors includes capacitive current and conduction current and there is a time delay between their peaks. It is revealed that ZnO varistors has a nonlinear conductivity for the nanosecond electric impulse excitation and the barrier capacitance decay constant of the ceramics sample is 105 ns, which is explained through the analysis of examining the material structure and the conductive mechanisms. 相似文献
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Sung-Yong Chun Kazuo Shinozaki Nobuyasu Mizutani 《Journal of the American Ceramic Society》1999,82(11):3065-3068
Penetration of a liquid (ZnO-PrO x ) into the grain boundaries of sintered, cobalt-doped ZnO pellets resulted in varistors with breakdown voltages per grain boundary in the 1-2 V range and nonlinearity coefficients of 22-37. The varistors were fabricated by spreading a thin layer of Pr6 O11 powder paste on the surface of ZnO pellets and heating to various temperatures (1200°-1400°C) and times (0-60 min). Comparing the varistor properties per grain boundary (e.g., threshold voltage, donor concentration, and barrier height) of liquid penetration to those of conventional method indicated the individual grain boundaries were electrically activated when the samples were heat-treated above liquid-phase formation temperature. 相似文献
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Co2O3的理化性能对ZnO压敏陶瓷电性能的影响 总被引:1,自引:0,他引:1
本文详细研究了氧化钴的理化性能对ZnO压敏陶瓷性能的影响。论述了Co2O3的热特性对压敏陶瓷烧成工艺产生的影响及控制措施,从理论上探讨了氧化 中所含杂质Fe、Cu,Na等对ZnO压敏陶瓷电性能的不利作用。提出了控制的上限,并试制出一种用于氧化锌压敏陶瓷的性能优良的Co2O3粉体。 相似文献
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Varistor Ceramics 总被引:23,自引:0,他引:23
David R. Clarke 《Journal of the American Ceramic Society》1999,82(3):485-502
The development of varistor ceramics is reviewed with an emphasis on ZnO-based varistors formed by liquid-phase sintering. Particular attention is given to the effects of microstructural disorder on the properties of varistors and to the different modes of failure that can occur. 相似文献
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以SnO2、Ta2O5和ZnO粉为原料,通过传统陶瓷固相反应烧结法制备了压敏变阻材料,实验中ZnO含量为0~2.00%(摩尔分数),烧结温度控制在1300~1500℃并保温2h。研究了ZnO掺杂量和烧结温度对材料的组成、微观结构和电学性能的影响。结果表明:在温度一定条件下,随着ZnO掺杂量的增加,材料的非线性系数、压敏电压先增大后减小;在ZnO含量一定时,随着烧结温度从1300℃升至1450℃,材料的非线性系数、压敏电压先增大后减小。ZnO掺杂量为0.50%时,在1450℃烧结得到的样品的非线性系数最高(6.2),漏电流最小(262vA/cm^2),压敏电压较高(83V/mm)。 相似文献