常压MOCVD制备MgO薄膜的研究

本文首次报道用常压金属有机化学气相沉积（ＡＰ－ＭＯＣＶＤ）在Ｓｉ（１００），ＳｉＯ２／Ｓｉ（１００）和Ｐｔ／Ｓｉ（１００）衬底上外延高质量的ＭｇＯ薄膜。研究了衬底温度与薄膜的取向性关系和ＭｇＯ薄膜的潮解特性。高纯ｍａｇｎｅｓｉｕｍａｃｅｔｙｌａｃｅｔｏｎａｔｅ［ｂｉｓ（２，４－ｐｅｎｔａｎｅｔａｎｅ－ｄｉｏｎｏ）ｍａｇｎｅｓｉｕｍ］［Ｍｇ（ＣＨ２ＣＯＣＨ２ＣＯＣＨ３）２］作为金属有机源，扫描电镜（ＳＥＭ），透射电镜（ＴＥＭ）和Ｘ－ＲＡＹ衍射实验显示，在较低的衬底温度（～４８０℃）下一次淀积成单晶膜。薄膜均匀，致密，结晶性和取向性很好，衬底温度（Ｔｓ）在４００℃到６８０℃之间，在Ｓｉ（１００）衬底上生长的ＭｇＯ薄膜都具有［１００］取向，在Ｓｉ（１００）、ＳｉＯ２／Ｓｉ（１００）和Ｐｔ／Ｓｉ（１００）衬底上生长的ＭｇＯ薄膜也都具有［１００］取向。     

浸渍涂布法制备（CaxLa_l－x）FeO_3薄膜及其气敏效应的研究

利用含有Ｃａ，Ｌａ和Ｆｅ成分的水溶胶（摩尔比为Ｃａ：Ｌａ：Ｆｅ＝０．２５：０．７５：ｌ），经浸渍──提拉──干燥──焙烧过程分别在玻璃衬底及Ａｌ＿２Ｏ＿３基片上制备了薄膜。通过ＸＲＤ和ＸＰＳ分析表明玻璃衬底上的薄膜是成分准确的钙钛矿结构的（Ｃａ＿０．２５Ｌａ＿０．７５）ＦｅＯ＿３薄膜，而Ａｌ＿２Ｏ＿３基片上的薄膜是成分不确切且呈混合相的薄膜；借助ＳＥＭ观察了薄膜的表面微结构；测试Ａｌ２０３基片上的薄膜对酒精的气敏效应，发现在较低的工作温度下，薄膜对低浓度的酒精蒸气有高的灵敏度。     

IBAD薄膜与基体界面的显微结构

采用中能离子束辅助沉积（ＩＢＡＤ）技术，在单晶Ａｌ２Ｏ３（０００１）基片上沉积Ｍｏ膜，在ＧＡＡｓ（００１）基片上合成Ｆｅ１６Ｎ２薄膜，用ＨＲＥＭ等研究了Ｍｏｅａｊｄ－Ａｌ２Ｏ３（０００１），Ｆｅ１６ｎ２膜－ＧａＡｓ（００１）界面的显微结构，结果表明：Ｍｏ膜的晶粒呈细小柱状或纤维状，晶粒平均尺寸约８ｎｍ，Ｆｅ１６Ｎ２薄膜为等轴晶，晶粒平均尺寸约为１０ｎｍ，在Ｍｏ膜－Ａｌ２Ｏ３（０００１）界面及Ｆｅ１     

PZT—NiTi铁电—铁弹多层膜的制备及表征

用溶胶－凝胶法制备了ＰＺＴ压电薄膜,研制了Ａｕ／ＰＺＴ／ＰＴ／ＴｉＯ２／ＮｉＴｉ／Ｓｉ（１００）多层膜结构,用ＸＲＤ,ＡＦＭ,ＴＥＭ－ＥＤＸ和ＳＡＤ技术考察了薄膜的表面形貌,相结构演化,以及面的元素分布特性。结果表明：ＰＺＴ膜与ＮｉＴｉ合金膜的结合良好,稳定;ＰＴ层的引入,使无定型ＰＺＴ薄膜在５５０℃退火后,转变为钙钛矿结构,降低了晶化温度,并有效地抑制焦碌石相的形成;ＮｉＴｉ薄膜结晶良好;ＴｉＯ     

La1-xCaxMn1.03O3外延薄膜的巨磁电阻效应

研究了用溶胶－凝胶（ｓｏｌ－ｇｅｌ）方法在ＬａＡｌＯ３（１００）衬底上制备的Ｌａ－１ｘＣａｘＭｎ１．０３Ｏ３外延薄膜的磁电阻效应。ｘ在０．２～０．６２１范围内变化,外延薄膜的电阻率与温度的关系从类半导体行为向金属导电行为转变。在ｘ≥０．５的４个样品中没有发现电荷有序绝缘体（ＣＯＩ）和反铁磁绝缘体（ＡＦＩ）现象。ｘ＝０．２样品在１．５Ｔ磁场下磁电阻率ＭＲ的最大值为１０＾４％、磁转变温度为２３０Ｋ。     

溶胶－凝胶法制备MoO_3陶瓷薄膜

以用酸钠为原料，乙二醇为溶剂，用溶胶－凝胶法制备ＭｏＯ３薄膜通过对干凝胶粉做ＤＴＡ和ＴＧ分析，用ＳＥＭ和ＸＲＤ分析还胶膜、热处理后氧化物膜及多次重复浸涂热处理薄膜的显微结构和晶相组成，研究了氧化物薄膜的形成过程．重复４次浸涂热处理可得到约２μｍ厚连续致密的、主晶相为择优取向的斜方ＭｏＯ３薄膜．     

Sol－Gel法合成K（Ta，Nb）O_3材料

以金属醇盐乙酸钾［Ｋ（ＯＣ２Ｈ５）］，乙醇铌［Ｎｂ（ＯＣ２Ｈ５）５］和乙醇钽［Ｔａ（ＯＣ２Ｈ５）５］为原料，用Ｓｏｌ－Ｇｅｌ法合成了Ｋ（Ｔａ，Ｎｂ）Ｏ３超细粉末和薄膜，研究了工艺参数如前驱体溶液浓度、热处理温度等因素对材料结构及物性的影响．粉料的粒径为２０～４０ｎｍ，所需合成温度约为７００℃，比通过传统的固相反应制备同种材料的合成温度低近１００℃；以ＳｒＴｉＯ３（１００）单晶作基片，采用匀胶法获得了沿（１００）高取向生长的Ｋ（Ｔａ０．６５Ｎｂ０．３５）Ｏ３薄膜，薄膜表面均匀、致密，室温时呈立方相晶格结构．研究表明，选择物理性质相似、晶格常数相匹配的材料作基片，适当控制工艺参数，尤其是前驱体溶液的浓度、升降温速度及烧结温度是获得优质薄膜的关键．     

BAS玻璃陶瓷的晶化行为与性能

用ＸＲＤ，ＤＴＡ，ＳＥＭ，ＴＥＭ和三点弯曲试验研究了溶胶－凝胶法合成的ＢＡＳ（ＢａＯ．Ａｌ２Ｏ３．２ＳｉＯ２）凝胶玻璃的结晶行为，晶型转变和热压ＢＡＳ的显微结构与性能，结果表明，ＢＡＳ凝胶玻璃法〉１０００℃时开始析晶，１１００℃时完全晶化，结晶相为六方钡长石，不加成核剂，呈现整体结晶特性，晶粒小于１μｍ加入５０ｍｇ．ｇ＾－１单斜钡长石作为晶种，可促进六方→单斜晶型转变，在１２５０℃处理７ｈ约有８０     

溶胶—凝胶工艺参数对（Pb,La）TiO3薄膜结构的影响

系统地研究了溶胶－凝胶（Ｓｏｌ－Ｇｅｌ）方法制备（Ｐｂ１－ｘＬａｘ）Ｔｉ（１－ｘ／４）Ｏ３（简称ＰＬＴ）薄膜时催化剂（或ｐＨ值）、溶液浓度在室温下对形成溶胶和凝胶的影响规律，用Ｘ射线结构分析和ＳＥＭ研究了热处理工艺对薄膜结构及晶粒尺寸的影响。实验表明，浓度、醋酸含量都存在一个最佳的范围，且随镧（Ｌａ）含量的增加，该范围减小；实验还发现，随着Ｌａ含量的增加，薄膜的晶化温度降低。在单晶（１００）Ｓｉ衬     

佳能EF28─105mmf／3．5─4．5USM变焦镜头使用体会

佳能ＥＦ２８─１０５ｍｍｆ／３．５─４．５ＵＳＭ变焦镜头使用体会蒋宁佳能（Ｃａｎｏｎ）ＥＦ２８－１０５ｍｍｆ／３，５－４．５ＵＳＭ变焦镜头是佳能公司配合３５ｍｍ自动聚焦单反相机ＥＯＳＳ（在欧美市场上该机型号为眼控聚焦的ＥＯＳＡＺＥ和非眼控聚焦的ＥＯＳ...     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.     

Tc trend in high-Tc superconductors

In our previous works, we have shown that most existing ceramic superconductors can be considered to be built of superconductor-semiconductor composite and we have estimated the change in phonon spectrum of the intrinsic superconductor unit if a semiconductor unit is attached to it. Moreover, the proximity effect under the size quantization condition has been examined in the superconductor-semiconductor composite. Each of the stated effects by itself could causeT _c enhancement in general as more semiconductor blocks are added to the system. We extend our study in this paper to analyze the combined actions of phonon spectral change and proximity effect without size quantization condition onT _c variation in members of the Tl₁ series of high-T _c superconductors. Our results indicate that an optimumT _c is obtained if the stated effects are included in the idealized unit cells of the superconductors made up of a superconductor-semiconductor array.     

Anomalous Hall Effect in Sn1?x?yMnxEuyTe and Sn1?x?yMnxEryTe Mixed Crystals

The Anomalous Hall Effect (AHE) was investigated in IV–VI ferromagnetic semimagnetic semiconductors of Sn_1–x Mn _x Te codoped with either Eu or Er. The analysis of experimental data is as follows. Hall resistivity and magnetization showed that AHE coefficient R _s depends on temperature and its value decreases with thetemperature increase. We observe that above ferromagnet–paramagnet transition temperature R _s changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of R _s , particularly change of the sign.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Effect of pressure onTc in La2-xBaxCuO4 withx=0.125

The superconducting transition temperature,T _c , of La_2–x Ba _x CuO₄ has been measured under high pressure up to 8 GPa.T _c is found to change drastically at the pressure where the structural phase transition takes place. This finding clearly indicates that there exists an intimate relation between the crystal structure and superconductivity.