一种由多级2/3分频单元级联而成的通道可编程分频器设计

介绍了一种由多级2/3分频单元级联的可编程分频器,可应用于扇出缓冲器的通道中.分频器采用0.18μm BiCMOS工艺实现.分频器的电源电压为3.3V,分频比支持1、3、5以及4～4 094的所有偶数分频,且所有分频输出信号的占空比为50％.     

应用于26 GHz-41 GHz频率综合器的高速可编程分频器的设计

毫米波频率综合器中的重要模块之一高速可编程多模分频器,它主要用于对VCO的输出信号进行分频从而获得稳定的本振信号,它的性能影响整个毫米波频率综合器性能。本文设计的一种高速、低功耗、分频比可变的分频器具有非常重要的意义[1]。根据26 GHz-41 GHz硅基锁相环频率综合器的系统指标,本文基于TSMC 45nm CMOS工艺,设计实现了一种高速可编程分频器。本文采用注入锁定结构分频结构实现高速预分频,该结构可以实现在0 d Bm的输入功率下实现25 GHz-48 GHz的分频范围、最低功耗为:2.6 m W。基于脉冲吞咽计数器的可编程分频器由8/9双模分频器和可编程脉冲吞咽计数器组成。其中8/9双模分频器由同步4/5分频器和异步二分频构成,工作频率范围10 GHz-27 GHz,最低输入幅度为:300 m V,最低功耗为:1.6 m V。可编程吞咽计数器采用改进型带置数功能的TSPC D触发器,该可编程分频器的最大工作范围:25 GHz;最小功耗为:363μW。本文设计的高速可编程多模分频器,可以实现32-2 062的分频比;当工作于28 GHz时,相位噪声小于-159 dBc/Hz。动态功耗为5.2 m W。     

可扩展分频比范围的射频可编程分频器设计

介绍了一种可扩展分频比范围的射频可编程分频器,该电路包括输入放大器、前置2分频电路、4级除2/除3分频单元和15位可编程计数器。该分频器应用于频率合成器中,采用0.35μm BiCMOS工艺实现,电源电压3.3V,电源电流80mA。射频输入12GHz时灵敏度-10~10dBm。分频比从16到219-1可调。     

一种宽分频范围的CMOS可编程分频器设计

设计了一种基于双模预分频的宽范围可编程分频器。对预分频器的逻辑电路进行了改进,提高了最高工作频率,同时,引入输入缓冲级,增加了低频时分频器的输入敏感性。基于Chartered 0.25μm厚栅CMOS工艺,在SpectreRF中仿真,分频器可在50MHz～2.2GHz频率范围正常工作。流片测试结果表明,该分频器可正常工作在作为数字电视调谐芯片本振源的PLL中,对80～900MHz的VCO输出信号,实现256～32767连续分频。     

一种ECL高速可编程分频器

本文介绍了一种ＥＣＬ高速可编程分频器的逻辑设计、电路设计、温度补偿设计、版图设计及研制结果。采用４μｍｐｎ结双埋层对通隔离ＥＣＬ工艺技术制作的可编程分频器，其最高工作频率达１００ＭＨｚ以上，工作温度范围为－５５～＋１２５℃，分频模数在１～６４之间任意自然数连续可变。     

一种0.18 μm CMOS可编程分频器的设计

采用标准0.18 μm CMOS工艺,设计了一种可编程分频器。基于基本分频单元的特殊结构,对除2/除3单元级联式可编程分频器的关键模块进行改进,将普通的CML型锁存器集成为包含与门的锁存器,提高了电路的集成度,有效地降低了电路功耗,提升了整体电路速度,并使版图更为紧凑。后仿真结果表明,在1.8 V电源电压,输入频率f_in=1 GHz的情况下,可实现任意数且步长为1的分频比,相位噪声为-173.1 dBc/Hz @ 1 MHz,电路功耗仅为9 mW。     

高速低功耗自适应可编程分频器

在约翰逊计数分频器的基础上,设计了一款双级结构分频器,采用系数自适应分配技术,显著提升了分频器的工作频率,并有效降低功耗。基于45nm CMOS工艺进行仿真,结果表明:该分频器最高工作频率可达8GHz,在1GHz时,49分频的双级可编程分频器功耗仅为63μW,在8GHz时,功耗为312μW。与典型的约翰逊结构相比,双级分频器工作频率可提升1.6倍,在分频器系数设置为6时,最大功耗优化比达到51.82%。     

极小频率分辨率的小数分频4模方案的实现

引言 稳定频率的获得借助于锁相环路。较小频率步进的获得则必须借助小数分频技术。小数分频的实现运用脉冲吞除原理,脉冲吞除的实现运用的是变模程序分频器。即对被分频信号预分频使得在高速分频器中只需采用少量ECL、TTL器件,这里的分频比是可变的,对于双模程序分频器为p/p+1,将分频信号的频率降低p倍。这里p的取值比     

基于0.18μm CMOS工艺的ZigBee分频器设计

为了降低ZigBee分频器的能量消耗,提出一种适用于2.45 GHz频率的超低功率COMS分频器,可以用于2.45 GHz整数分频锁相环频率合成器中,适用于ZigBee标准网络。提出的分频器在吞脉冲分频器的基础上,通过一个简单的数字电路取代吞咽计数器,从而降低了功率消耗和设计复杂性。该分频器的模量可以在481~496之间调整。所有的电路设计都基于0.16μm的TSMC CMOS技术,使用1.8 V直流电压供电。仿真结果显示,在2.45 GHz ISM频段中4 b分频器的功耗为420μW,相比之前类似分频器减少了40%。     

应用于DVB—T的0．18μmCMOS工艺数字可编程分频器芯片设计

介绍了用于DVB．T（地面数字视频广播）收发机的频率综合器中可编程分频器的设计。该分频器可实现926～1387范围的分频比，并用改进的分频算法使分频输出波形的占空比更加理想。本设计采用SMIC0．18μm CMOS工艺标准单元的半定制设计方法，按标准的数字集成电路设计流程进行设计，包括Verilog代码编写、逻辑综合、版图规划、布局布线、后端时序仿真分析等过程。后仿真结果表明该分频器功能正确，分频范围宽，利用改进的分频算法改善了分频输出波形的占空比。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first     

JOURNAL OF ELECTRONICS(CHINA)

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NEXT GENERATION WIRELESS NETWORKS–ESPECIALLY THE USE OF MILLI-MICROWAVE BANDS

The global bandwidth shortage of wireless communications has motivated the exploration of the naillimeter wave （ram-wave） frequency spectrum for the next generation wireless communications. Recent advances in RF CMOS technology and high speed baseband signal processing technologies have enabled tile extensive research and development of turn-wave wireless communications. The multi gigabit per second data rate of ram-wave system will lead to applications in many important scenarios, such as WPAN, WLAN,back-haul for cellular system. And the frequency bands include 28 GHz, 38 GHz, 45GHz, 60GHz, E-BAND and even beyond 100 GHz. The propagation and the imitation of the RF circuits design in these frequency bands make the directional antennas be inevitable for mm-wave communications.