Advanced semiconductor diagnosis by multidimensional electron-beam-induced current technique

We present advanced semiconductor diagnosis by using electron-beam-induced current (EBIC) technique. By varying the parameters such as temperature, accelerating voltage (V(acc)), bias voltage, and stressing time, it is possible to extend EBIC application from conventional defect characterization to advanced device diagnosis. As an electron beam can excite a certain volume even beneath the surface passive layer, EBIC can be effectively employed to diagnose complicated devices with hybrid structure. Three topics were selected to demonstrate EBIC applications. First, the recombination activities of grain boundaries and their interaction with Fe impurity in photovoltaic multicrystalline Si (mc-Si) are clarified by temperature-dependent EBIC. Second, the detection of dislocations between strained-Si and SiGe virtual substrate are shown to overcome the limitation of depletion region. Third, the observation of leakage sites in high-k gate dielectric is demonstrated for the characterization of advanced hybrid device structures.     

Characterization of defects in semiconductors by combined application of SEM(EBIC) and SDLTS*

Besides the characterization of the geometrical structure of defects in semiconductors by TEM the estimation of their electrical activity is of importance. SEM(EBIC) and SDLTS (scanning deep level transient spectroscopy) are especially suitable for this purpose; they allow the inspection of electronic properties with a spatial resolution in the micron-range. On the one hand, SEM(EBIC) yields information on the recombination efficiency of defects in the crystal volume adjacent to a pn junction or a Schottky barrier; on the other hand, SDLTS enables the detection to be carried out of the distribution and the energetic levels of deep level defects lying in the space charge region. Accordingly, the combined application of these techniques is very promising for investigating physical processes implying an inhomogeneous incorporation of deep level defects in semiconductor crystals. In comparison to the widely used SEM(EBIC) technique SDLTS has only rarely been applied, a fact that is due to the high detection sensitivity necessary for measuring capacity transients. The application of a highly sensitive (10^—6 pF) micro-computer-controlled SDLTS system in combination with a conventional EBIC system allows a reliable inspection of semiconductor materials and devices, based on A₃B₅ compounds and on silicon. A typical application of the above technique is the investigation of the impurity distribution around extended crystal defects, like dislocations and precipitates, to study their gettering activity.     

Monte Carlo simulation of CL and EBIC contrasts for isolated dislocations

Electron beam-induced current (EBIC) and cathodoluminescence (CL) are widely used to investigate semiconductor materials and devices, particularly to obtain information on the recombination properties and the geometry of defects. This report describes a simple formulation of CL and EBIC contrasts based on the Born approximation of excess carrier density in the presence of a pointlike defect. Quantitative interpretation of the CL and EBIC images is often difficult because of a lack of accurate theory treating simultaneously both the details of the electron beam penetration in the semiconductor and the generation of EBIC and CL signals. To overcome this difficulty, the Monte Carlo approach to the phenomenon of the electron beam penetration in solids has been developed to calculate the CL and EBIC signals during a simulation of the electron trajectory. Results for an inclined dislocation in GaAs are presented.     

GaP LPE半导体材料的扫描电子显微镜研究

本文论述了用扫描电子显微镜研究GaP LPE半导体材料,二次电子像用于分析样品的表面形貌,电子束感生电流像(EBIC)用于显示p-n结的位置,定量EBIC用以确定少子扩散长度和表面复合速度等重要参量。     

Direct assessment of recombination noise in semiconductors using electron beam-induced conductivity

The level of internal noise of the transistors, diodes, and other semiconductor components limits the successful design of any low noise electronic system. All types of noise, namely, Johnson, 1/f, and so forth, are generated due to activity of crystalline defects such as vacancies, dislocations, and others. The intensity of the electron scattering and recombination processes, inflicted by defects (traps), controls the level of noise. Dependent on the dynamic operation condition of semiconductor devices, such as external biases and level of current injection, the traps will generate certain type and level of noise. Material growth or device processing technologies could introduce all kind of defects. Therefore, characterization of the semiconductor wafer in the early stages of processing (at least before packaging) could help to predict the level of noise due to the type and density of defects present on the wafer. Sorting out bad semiconductor chips could save money and effort in the radio frequency design of low-noise circuits. This current study focuses on 1/f noise modeling, which involves most powerful generators of noise and linear defects, named dislocations. The study also examines the possibility of assessing this noise by quantitative electron beam-induced conductivity (EBIC) measurements. These defects could be found in the bulk as well as at the epitaxial interfaces of a semiconductor device. The nanoscale size of these defects makes the scanning electron beam an instrument of choice for the proposed study. Conventional EBIC produces images of the defects, where contrast is proportional to the recombination rate at the site of a defect. Since contrast is measured as a fraction of one percent, the relative nature of contract value precludes quantitative measurements of the recombination rate, thus making quantitative assessment of 1/f noise impossible. In our model, using the Boltzman continuity equation, the recombination-generation processes per unit of length of a dislocation was defined for two operational conditions of EBIC, namely, for low and high intensity of an electron beam. The experimental technique of the quantitative measurement of carrier recombination (Mil'shtein 2001) consists of taking two EBIC scans along the selected defect at two different beam intensities, digitally subtracting the first scan from the second one and normalizing the result to the size of the electron range. The value of the recombination rate, extracted from the model, could then be used to predict the level of 1/f noise in the tested semiconductor sample.     

High-resolution scanning near-field EBIC microscopy: application to the characterisation of a shallow ion implanted p+-n silicon junction

High-resolution electron beam induced current (EBIC) analyses were carried out on a shallow ion implanted p⁺–n silicon junction in a scanning electron microscope (SEM) and a scanning probe microscope (SPM) hybrid system. With this scanning near-field EBIC microscope, a sample can be conventionally imaged by SEM, its local topography investigated by SPM and high-resolution EBIC image simultaneously obtained. It is shown that the EBIC imaging capabilities of this combined instrument allows the study of p–n junctions with a resolution of about 20 nm.     

Observation of dislocations and microplasma sites in semiconductors by direct correlations of STEBIC,STEM and ELS

A high voltage electron microscope, equipped with scanning transmission (STEM) attachment, electron beam induced conductivity (EBIC) facilities, and electron energy loss spectrometer (ELS), has been used to investigate semiconductor devices. The capability of STEM to produce, simultaneously or sequentially, conductive and transmission images of the same specimen region, which can also be ELS analysed, is exploited in order to establish direct and unambiguous correlations between EBIC and STEM images of defective regions (dislocations and microplasma sites) in silicon devices. The results obtained are discussed in terms of correlations, resolution, contrast, and radiation damage; in addition, a comparison is made between this method and the other correlation methods based on EBIC/SEM (scanning electron microscope) and TEM (transmission electron microscope).     

A theoretical study of the determination of the depth of a dislocation by combined use of EBIC and CL technique

We propose a method for the determination of the depth of a macroscopical lattice defect, e.g., a dislocation, in a semiconductor diode using EBIC and CL contrast measurements from the same defect. The method requires restrictions neither with respect to the value of the bulk diffusion length nor with respect to the shape of the generation region of electron-hole pairs.     

Polarization contrast in reflection near-field optical microscopy with uncoated fibre tips

Using cross-hatched, patterned semiconductor surfaces and round 20-nm-thick gold pads on semiconductor wafers, we investigate the imaging characteristics of a reflection near-field optical microscope with an uncoated fibre tip for different polarization configurations and light wavelengths. It is shown that cross-polarized detection allows one to effectively suppress far-field components in the detected signal and to realize imaging of optical contrast on the sub-wavelength scale. The sensitivity window of our microscope, i.e. the scale on which near-field optical images represent mainly optical contrast, is found to be ≈100 nm for light wavelengths in the visible region. We demonstrate imaging of near-field components of a dipole field and purely dielectric contrast (related to well-width fluctuations in a semiconductor quantum well) with a spatial resolution of ≈100 nm. The results obtained show that such a near-field technique can be used for polarization-sensitive imaging with reasonably high spatial resolution and suggest a number of applications for this technique.     

Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices

Electron beam induced current (EBIC) characterisation can provide detailed information on the influence of crystalline defects on the diffusion and recombination of minority carriers in semiconductors. New developments are required for GaN light emitting devices, which need a cross-sectional approach to provide access to their complex multi-layered structures. A sample preparation approach based on low-voltage Ar ion milling is proposed here and shown to produce a flat cross-section with very limited surface recombination, which enables low-voltage high resolution EBIC characterisation. Dark defects are observed in EBIC images and correlation with cathodoluminescence images identify them as threading dislocations. Emphasis is placed on one-dimensional quantification which is used to show that junction delineation with very good spatial resolution can be achieved, revealing significant roughening of this GaN p-n junction. Furthermore, longer minority carrier diffusion lengths along the c-axis are found at dislocation sites, in both p-GaN and the multi-quantum well (MQW) region. This is attributed to gettering of point defects at threading dislocations in p-GaN and higher escape rate from quantum wells at dislocation sites in the MQW region, respectively. These developments show considerable promise for the use of low-voltage cross-sectional EBIC in the characterisation of point and extended defects in GaN-based devices and it is suggested that this technique will be particularly useful for degradation analysis.     

Measuring the Parameters of an Electron Beam with the Help of Optical Transition Radiation

A technique for measuring the profile and transverse emittance of an electron beam generated at the output of the rectangular accelerating structure of a racetrack microtron is described. The structure ensures an electron-beam energy of 5.3 MeV with a pulsed current of up to 50 mA. Experimental results are provided. The measurements were performed with the help of a videosetup imaging the optical transition radiation.     

Polarization contrast in reflection near-field optical microscopy with uncoated fibre tips

Using cross-hatched, patterned semiconductor surfaces and round 20-nm-thick gold pads on semiconductor wafers, we investigate the imaging characteristics of a reflection near-field optical microscope with an uncoated fibre tip for different polarization configurations and light wavelengths. It is shown that cross-polarized detection allows one to effectively suppress far-field components in the detected signal and to realize imaging of optical contrast on the subwavelength scale. The sensitivity window of our microscope, i.e. the scale on which near-field optical images represent mainly optical contrast, is found to be approximately 100 nm for light wavelengths in the visible region. We demonstrate imaging of near-field components of a dipole field and purely dielectric contrast (related to well-width fluctuations in a semiconductor quantum well) with a spatial resolution of approximately 100 nm. The results obtained show that such a near-field technique can be used for polarization-sensitive imaging with reasonably high spatial resolution and suggest a number of applications for this technique.     

A computerized signal acquisition system for the quantitative evaluation of EBIC and CL data in a SEM

Electron beam-induced current (EBIC) and cathodoluminescence (CL) are widely used methods to obtain information about recombination properties of semiconducting materials and their defects on a micrometer length scale. In this article a computerized SEM (scanning electron microscope) setup is described, which enables us to perform simultaneous measurements of several signals and automatic temperature-dependent measurements. As examples for the performance of this system we present results obtained by simultaneous EBIC/CL experiments, allowing a reconstruction of the defect geometry. In a second example, the temperature dependence of the EBIC contrast is analyzed, introducing the method of EBIC spectroscopy.     

The effect of electron range on electron beam induced current collection and a simple method to extract an electron range for any generation function

The effect of electron range on electron beam induced current (EBIC) is demonstrated and the problem of the choice of the optimal electron ranges to use with simple uniform and point generation function models is resolved by proposing a method to extract an electron range-energy relationship (ERER). The results show that the use of these extracted electron ranges remove the previous disagreement between the EBIC curves computed with simple forms of generation model and those based on a more realistic generation model. The impact of these extracted electron ranges on the extraction of diffusion length, surface recombination velocity and EBIC contrast of defects is discussed. It is also demonstrated that, for the case of uniform generation, the computed EBIC current is independent of the assumed shape of the generation volume.     

High-pressure scanning electron microscopy of insulating materials: A new approach

A new SEM technique for imaging uncoated non-conducting specimens at high beam voltages is described which employs a high-pressure environment and an electric field to achieve charge neutralization. During imaging, the specimen surface is kept at a stable low voltage, near earth potential, by directing a flow of positive gas ions at the specimen surface under the action of an electric bias field at a pressure of about 200 Pa. In this way charge neutrality is continuously maintained to obtain micrographs free of charging artefacts. Images are formed by specimen current detection containing both secondary electron and backscattered electron signal information. Micrographs of geological, ceramic, and semiconductor materials obtained with this method are presented. The technique is also useful for the SEM examination of histological sections of biological specimens without any further preparation. A simple theory for the charge neutralization process is described. It is based on the interaction of the primary and emissive signal components with the surrounding gas medium and the resulting neutralizing currents. Further micrographs are presented to illustrate the pressure dependence of the charge neutralization process in two glass specimens which show clearly identifiable charging artefacts in conventional microscopy.     

A low energy electron beam annealing system: Design,capability and use

The paper discusses how an experimental low energy electron-beam annealing system may be constructed from SEM components for use in semiconductor research. The system is essentially very simple in design but is adequate for selective transient annealing of areas of bulk materials and features within specially fabricated test integrated circuits. Some experimental results obtained with such a system are detailed to illustrate its use and capabilities.     

A study of electron beam-induced conductivity in resists.

The charging of polymeric resist materials during electron beam irradiation leads to significant problems during imaging and lithography processes. Charging occurs because of charge deposition in the polymer and charge generation/trapping due to formation of electron-hole pairs in the dielectric. The presence of such charge also results in the phenomena of electron beam-induced conductivity (EBIC). Electron beam-induced conductivity data have been obtained for three commercial e-beam resists under a variety of dose rate and temperature conditions. From the observed values of induced conductivity under varying conditions significant information about the generation of electron-hole pair and the transport of charge in the resist can be obtained. Three electron beam resists, EBR900, ZEP7000, and PBS are examined by an external bias method. The difference in resist chemistry is considered to play the role in the initial state EBIC behaviors among three resists even though the way that it affects the behaviors is not clear. A comparison of the power consumption comparison is proposed as a measure to give a preliminary estimate of the carrier concentration and carrier drift velocity differences among the resists. A simple single trap model with constant activation energy is proposed and provides good agreement with experiment.     

Quantitative determination of electric field strengths within dynamically operated devices using EBIC analysis in the SEM

Although electron beam-induced current (EBIC) technique was invented in the seventies, it is still a powerful technique for failure analysis and reliability investigations of modern materials and devices. Time-resolved and stroboscopic microanalyses using sampling Fourier components decomposed by modulated charge carrier excitation are introduced. Quantitative determination of electric field strengths within dynamically operated devices in the scanning electron microscope (SEM) will be demonstrated. This technique allows investigations of diffusion and drift processes and of variations of electric field distributions inside active devices.     

Scanning-DLTS,EBIC, and CL Investigations of Diamond Indentations in GaAs p+n Junctions

Diamond indentations have been carried out on Zn-diffused GaAs p⁺n junctions on (100) oriented material. Electron-beam induced current (EBIC) investigations revealed the well-known dislocation slip bands in 〈110〉 directions. Scanning deep level transient spectroscopy (SDLTS) imaging proved a deformation-induced point-defect level at E_y + 0.5 eV, which is preferentially concentrated in the dislocation-free regions between the slip bands rather than within the slip bands. Monochromatic cathodolumines-cence (CL) imaging at 10K using different wavelengths revealed only the dislocation-induced recombination activity but not any point-defect luminescence corresponding to the 0.5 eV level found by SDLTS.     

Cathodoluminescence studies of nanostructured semiconductors

Spatially and spectrally resolved cathodoluminescence in the scanning electron microscope is a very powerful technique for studying the optical properties of semiconductor structures, especially low‐dimensional structures (structures with nanometre‐sized features). The technique is generally nondestructive and can be combined with the normal imaging capabilities and analysis possibilities of the scanning electron microscope. This article gives an introduction to the technique and a number of examples of the possibilities of the technique.