Radiation degradation of large fluence irradiated space silicon solar cells

In this paper, we present data on the electrical properties of 50 gm thick space silicon BSFR cells irradiated with 10 MeV protons with a fluence exceeding 1 x 10¹³ p/cm² and irradiated with 1 MeV electrons with a fluence exceeding 1 x 10¹⁶ e/cm², and discuss the anomalous degradation which was found in these large-fluence regions. These data show an increase of saturation current density and a decrease of diffusion voltage of the pn junction, and a decrease of majority carrier density and an increase of series resistance of the p-substrate as a result of the formation of a large amount of carrier traps by the large-fluence irradiation.     

Radiation-resistant solar cells for space use

This paper reviews the present status of radiation-resistant solar cells made with Si, GaAs, InP and InGaP/GaAs for space use. At first, properties of radiation-induced defects in semiconductor materials and solar cells are described based on an anomalous degradation of Si space solar cells under high-energy, high-fluence electron and proton irradiations. Advantages of direct bandgap materials as radiation-resistant space cells are presented. Unique properties of InP as radiation-resistant cells have also been found. A world-record efficiency of 26.9% (AM0) has been obtained for an InGaP/GaAs tandem solar cell. Radiation-resistance of the InGaP/GaAs tandem cells is described.     

紫外光下Ag掺杂TiO2薄膜基底对VO2相转变温度的影响

利用溶胶−凝胶法和浸渍提拉技术制备了不同结构银掺杂二氧化钛薄膜为基底材料的VO₂薄膜,考察了Ag分级配置的二氧化钛薄膜基底材料对VO₂薄膜相变温度的影响。在紫外灯照射下测试面内电阻随温度,电压随时间的变化,结果表明基底材料为Ag分级配置的VO₂/TiO₂薄膜相变温度点明显降低。这可能是由于光照条件下空穴载流子从基底材料注入到VO₂薄膜导致相变温度点偏移。因此,不同结构银掺杂二氧化钛薄膜为基底材料的VO2薄膜能够根据环境温度和太阳光线变化而应用于光热致变色智能窗。     

A simple analytical treatment of edge-illuminated VMJ silicon solar cells

The series connected silicon vertical multi-junctions (VMJs) solar cells have been suggested as means for ensuring high voltage high efficiency solar cells. This study includes a review of some previously published work concerning the edge-illuminated VMJs solar cells. We introduce a simple one-dimensional analysis to study the high voltage series connected silicon VMJs solar cells. The cell, under study, consists of 40 VMJs. Each junction (unit cell) has dimensions of 250 μm × 0.78 cm × 500 μm. We calculate the short circuit current, the open circuit voltage and the efficiency for an ideal cell, having perfect carrier collection at short circuit conditions, and for real cells. An optimization with respect to the base doping, the emitter doping, the surface recombination velocity and the number of junctions is done for the real cell. A conversion efficiency of 20% has been calculated under AM1.5 light spectrum for real cells having a base doping of 10¹⁶ cm⁻³ and an emitter doping of 10¹⁷ cm⁻³.     

Carrier transport in high-efficiency ZnO/SiO2/Si solar cells

Carrier transport in ZnO/SiO₂/n-Si solar cell has been theoretically analyzed with a consideration that the photo-carrier transport from silicon to ZnO layer through the barrier is dominated by quantum mechanical tunneling process of minority carrier. It was found that the highest efficiency of the cell could be achieved at SiO₂ layer thickness of around 20 Å. The efficiency of the cells decreases as the surface states density Q_ss becomes higher. Moreover, the efficiency increases as the electron concentration of ZnO layer is increased due to the decrease of work function of ZnO. It was also found that the lower transmittance of the high carrier concentration ZnO due to the free-carrier absorption at infrared wavelength region does not give any significant effect to the cell performance. The efficiency of higher than 25% is achievable by optimizing the involved device parameters.     

Germanium-doped Czochralski silicon for photovoltaic applications

Germanium (Ge)-doped Czochralski (GCZ) silicon has been grown for photovoltaic (PV) applications. It is found that Ge doping improves the mechanical strength of CZ silicon, resulting in the reduction of breakage during wafer cutting, cell fabrication and module assembly. Boron-oxygen (B-O) defects that lead to the light-induced degradation (LID) of carrier lifetime are effectively suppressed by Ge doping. The decrease in the maximum concentration of B-O defects increases with an increase of Ge concentration. The efficiency of GCZ silicon solar cells and the power output of corresponding PV modules both exhibit smaller loss under sunlight illumination. The current work suggests that GCZ silicon should be potentially a novel substrate for thin solar cells with low LID effect.     

Deep level transient spectroscopy on ZnO/CdS/CuGaxIn1−xSe2 photovoltaic cells

The trap properties of ZnO/CdS/CuInSe₂ and ZnO/CdS/CuGa_0.3Ino_0.7Se₂ PV cells were investigated. It is believed that an argon (Ar) annealing prior to the junction formation could reduce the density of deep traps close to the mid-gap of single-crystal CuInSe₂. While no minority carrier traps were observed in ZnO/CdS/CuInSe₂ PV cells, results on ZnO/CdS/CuGa_0.3Ino_0.7Sen₂ PV cells suggested the co-existence of both the majority and minority carrier traps. Furthermore, there is evidence showing deep traps close to the mid-gap of Ar annealed single-crystal CuGa_0.3In_0.7Se₂.     

RPD技术生长ICO∶H薄膜及其在晶体硅异质结太阳电池中的应用

通过反应等离子体沉积(RPD)技术室温下生长掺铈的氧化铟薄膜,且沉积过程中通入氢气。高迁移率可使透明导电薄膜在较低的电阻率时保持较高的近红外透过率;透明导电薄膜中较低的载流子浓度能够减少自由载流子的吸收。迁移率的大小主要由薄膜内的散射机制决定,并且受薄膜非晶结构制约。ICO∶H薄膜表面平整,在近红外长波段透过率超过80%。在氢气流量为2 sccm时,薄膜获得1.34×10^-3Ω·cm的最低电阻率和94 cm²/Vs的高迁移率。在晶体硅异质结(SHJ)太阳电池应用中,获得了较高的短路电流密度38.44 mA/cm²,相应的转换效率为16.68%。     

Degradation of carrier lifetime in Cz silicon solar cells

The lifetime degradation induced by light illumination or carrier injection which is observed in Czochralski-grown silicon (Cz-Si) leads to a significant decrease of solar cell efficiency. Thus, the reduction of this effect has a high potential for the improvement of Cz-Si solar cells. In the present work both, the analysis of the underlying defect and its technological reduction are discussed. A clear correlation of the Cz-specific metastable defect with the oxygen and boron concentration in Cz-Si has been observed. Especially, recently performed lifetime measurements on oxygen-free boron-doped p-type MCz silicon and gallium-doped oxygen-contaminated Cz-silicon, both of which show no degradation, confirm this hypothesis. While the quantitative correlation between the defect concentration and boron is linear, the increase of the defect concentration induced by the interstitial oxygen concentration is superlinear, i.e. it follows a potential law of power approximately 5. Beyond the defect analysis, two different ways to reduce the metastable defect concentration are discussed. A proper material choice by substituting or reducing one of the major components of the metastable defect can completely avoid the degradation effect. The excellent performance of oxygen-free MCz-Si and gallium-doped Cz-Si is reflected in the achieved record efficiencies of 22.7% and 22.5%, respectively. In standard boron-doped oxygen-contaminated p-type Cz-Si a strong reduction of the metastable defect concentration can be achieved by a high-temperature process step resulting in an improvement of the stable bulk lifetime by a factor of 2–4.     

In situ grown TiN/N-TiO2 composite for enhanced photocatalytic H2 evolution activity

Titanium nitride (TiN) decorated N-doped titania (N-TiO₂) composite (TiN/N-TiO₂) is fabricated via an in situ nitridation using a hydrothermally synthesized TiO₂ and melamine (MA) as raw materials. After the optimization of the reaction condition, the resultant TiN/N-TiO₂ composite delivers a hydrogen evolution activity of up to 703 μmol/h under the full spectrum irradiation of Xe-lamp, which is approximately 2.6 and 32.0 times more than that of TiO₂ and TiN alone, respectively. To explore the underlying photocatalytic mechanism, the crystal phase, morphology, light absorption, energy band structure, element composition, and electrochemical behavior of the composite material are characterized and analyzed. The results indicate that the superior activity is mainly caused by the in situ formation of plasmonic TiN and N-TiO₂ with intimate interface contact, which not only extends the spectral response range, but also accelerates the transfer and separation of the photoexcited hot charge carrier of TiN. The present study provides a fascinating approach to in situ forming nonmetallic plasmonic material/N-doped TiO₂ composite photocatalysts for high-efficiency water splitting.     

Characterization and performance of (La,Ba)(Co,Fe)O3 cathode for solid oxide fuel cells with iron–chromium metallic interconnect

(La_0.6Ba_0.4)(Co_0.2Fe_0.8)O₃ (LBCF) is synthesized by a sol–gel method as a Cr-tolerant cathode for intermediate-temperature solid oxide fuel cells (ITSOFCs). The electrochemical performance and Cr deposition process for the O₂ reduction reaction on LBCF cathodes in the presence and absence of a Fe–Cr alloy interconnect are investigated in detail, in comparison with a (La,Sr)(Co,Fe)O₃ (LSCF) electrode. Cr deposition occurs for the O₂ reduction reaction on LBCF electrodes in the presence of Fe–Cr alloy. Very different from that observed for the reaction on the LSCF cathode, Cr deposition on the LBCF electrode/gadolinia-doped ceria (GDC) electrolyte system is very small and shows little poisoning effect for O₂ reduction on LBCF electrode. The results demonstrate that the LBCF electrode has a high resistance towards Cr deposition and high tolerance towards Cr poisoning.     

Strategies for improving radiation tolerance of Si space solar cells

The present study explored first time the better radiation tolerance of gallium-doped silicon solar cells as compared to conventional boron-doped silicon solar cells after heavy fluence of 1 MeV electron irradiation. One of the approaches to improve the end of life of silicon solar cells is by increasing the effective base carrier concentrations. Analysis of the carrier removal rate R_C in boron, gallium and aluminum-doped Si solar cells showed that carrier removal effects can be partially offset by using gallium as dopant instead of boron.     

Reduction of hydrogen peroxide production at anode of proton exchange membrane fuel cell under open-circuit conditions using ruthenium–carbon catalyst

This study examines the effect of hydrogen peroxide (H₂O₂) on the open-circuit voltage (OCV) of a proton exchange membrane fuel cell (PEMFC) and the reduction of H₂O₂ in the membrane using a ruthenium/carbon catalyst (Ru/C) at the anode. Each cathode and anode potential of the PEMFC in the presence of H₂O₂ is examined by constructing a half-cell using 1.0 M H₂SO₄ solution as an electrolyte and Ag/AgCl as the reference electrode. H₂O₂ is added to the H₂SO₄ solution and the half-cell potential is measured at each H₂O₂ concentration. The cathode potential is affected by the H₂O₂ concentration while the anode potential remains stable. A Ru catalyst is used to reduce the level of H₂O₂ formation through O₂ cross-over at the interface of a membrane and the anode. The Ru catalyst is known to produce less H₂O₂ through oxygen reduction at the anode of PEMFC than a Pt catalyst. A Ru/C layer is placed between the Nafion^® 112 membrane and anode catalyst layer and the cell voltage under open-circuit condition is measured. A single cell is constructed to compare the OCV of the Pt/C only anode with that of the Ru/C-layered anode. The level of hydrogen cross-over and the OCV are determined after operation at a current density of 1 A cm⁻² for 10 h and stabilization at open-circuit for 1 h to obtain an equilibrium state in the cell. Although there is an increase in the OCV of the cell with the Ru/C layer at the anode, excessive addition of Ru/C has an adverse effect on cell performance.     

Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated with various-energy protons

Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) solar cells subjected to proton irradiation is performed with the use of a one-dimensional optical device simulator, PC1D. By fitting the external quantum efficiencies of 3J solar cells degraded by 30 keV, 150 keV, 3 MeV, or 10 MeV protons, the short-circuit currents (I_SC) and open-circuit voltages (V_OC) are simulated. The damage coefficients of minority carrier diffusion length (K_L) and the carrier removal rate of base carrier concentration (R_C) of each sub-cell are also estimated. The values of I_SC and V_OC obtained from the calculations show good agreement with experimental values at an accuracy of 5%. These results confirm that the degradation modeling method developed in this study is effective for the lifetime prediction of 3J solar cells.     

Synthesis and characterization of PtNx/C as methanol-tolerant oxygen reduction electrocatalysts for a direct methanol fuel cell

Platinum nitride supported on carbon (PtN_x/C) is synthesized by the novel strategy of chelating the Pt precursor followed by pyrolysis and is characterized as a possible cathode electrocatalyst for direct methanol fuel cells (DMFCs). The prepared PtN_x/C is shown to possess high methanol tolerance and catalytic activity for the oxygen reduction reaction (ORR). The results indicate that the temperature of the heat treatment and the molar ratio of Pt to N in the precursor solution play important roles in the catalytic performance. A sample of PtN_x/C prepared at 700 °C with a Pt:N ratio of 1:2 shows a significant decrease in the potential loss associated with the mixed potential and the poisoning effect by adsorbed methanol, and this results in a high power density of 180 mW cm⁻². The performance is 30% higher than that of Pt/C under 4 M of methanol concentration.     

Spontaneous polarization enhanced bismuth ferrate photoelectrode: fabrication and boosted photoelectrochemical water splitting property

In this paper, the fabrication of a highly orientated Bi₂Fe₄O₉ (BFO) photoelectrode in the presence of two-dimensional (2D) graphene oxide (GO) was reported. It was found that the GO can be used as a template for controlling the growth of BFO, and the nanoplate composites of BFO/reduced graphene oxide (RGO) with a high orientation can be fabricated. The thickness of the nanoplates became thinner as the ratio of GO increased. As a result, the ferroelectric spontaneous polarization unit arranges itself in the space in a periodic manner, leading to the formation of a polarization field along a special direction. Therefore, the created built-in electric field of the nanoplate composites of BFO/RGO is improved upon the increase of the amount of RGO. As expected, carrier separation is enhanced by the built-in electric field, therefore substantially enhancing the photoelectrochemical (PEC) activity of water splitting compared to pure BFO under the irradiation of visible-light.     

Bismuth oxide doped scandia-stabilized zirconia electrolyte for the intermediate temperature solid oxide fuel cells

Electrical and structural properties of bismuth oxide doped scandia-stabilized zirconia (ScSZ) electrolyte for solid oxide fuel cells (SOFCs) have been evaluated by means of XRD, TGA, DTA, and impedance spectroscopy. The amount of Bi₂O₃ in the ScSZ was varied in the range of 0.25–2.0 mol%. The original ScSZ samples indicated a rhombohedral crystalline structure that in general has lower conductivity than the cubic phase. However, the addition of Bi₂O₃ to ScSZ electrolyte was found to stabilize the cubic crystalline phase as detected by XRD. Impedance spectroscopy measurements in the temperature range between 350 and 900 °C indicated a sharp increase in conductivity for the system containing 2 mol% of Bi₂O₃ that is attributed to the presence of the cubic phase. In addition, impedance spectroscopy measurements revealed significant decrease of both the grain bulk and grain boundary resistances with respect to the temperature change from 600 to 900 °C and concentration of Bi₂O₃ from 0.5 to 2 mol%. The electrical conductivity at 600 °C obtained for 2 mol% Bi₂O₃ doped ScSZ was 0.18 S cm⁻¹.     

Mesoporous carbon/graphitic carbon nitride spheres for photocatalytic H2 evolution under solar light irradiation

Herein, two different photocatalytic composites based on ordered (OCS) and disordered (DCS) mesoporous hollow carbon spheres and graphitic carbon nitride (gCN) have been successfully fabricated through facile acid treatment. The influence of carbon shell morphology of the spheres on gCN loading and photocatalytic H₂ production under simulated solar light irradiation has been revealed. The amount of evolved H₂ was ~6.2 (OCS/gCN) and ~5.3 (DCS/gCN) times higher in comparison to pristine gCN. It was found that graphitic carbon nitride was much more homogenously supported onto ordered mesoporous carbon spheres than disordered ones. The deposition of gCN onto ordered carbon spheres was found to be more efficient to increase carrier concentration, enhance photogenerated charge carrier transport and separation. It is assigned to the formation of the graphitic carbon nitride/carbon heterojunction facilitating the contact surface between the two phases of hybrid. Therefore, via tuning of the morphology of carbon shell being a host for gCN it was possible to find more promising candidate as a photocatalyst in H₂ production under solar light irradiation.     

Thermochemical hydrogen production from a two-step solar-driven water-splitting cycle based on cerium oxides

A new thermochemical cycle for H₂ production based on CeO₂/Ce₂O₃ oxides has been successfully demonstrated. It consists of two chemical steps: (1) reduction, 2CeO₂ → Ce₂O₃ + 0.5O₂; (2) hydrolysis, Ce₂O₃ + H₂O → 2CeO₂ + H₂. The thermal reduction of Ce(IV) to Ce(III) (endothermic step) is performed in a solar reactor featuring a controlled inert atmosphere. The feasibility of this first step has been demonstrated and the operating conditions have been defined (T = 2000 °C, P = 100–200 mbar). The hydrogen generation step (water-splitting with Ce(III) oxide) is studied in a fixed bed reactor and the reaction is complete with a fast kinetic in the studied temperature range 400–600 °C. The recovered Ce(IV) oxide is then recycled in first step. In this process, water is the only material input and heat is the only energy input. The only outputs are hydrogen and oxygen, and these two gases are obtained in different steps avoiding a high temperature energy consuming gas-phase separation. Furthermore, pure hydrogen is produced (it is not contaminated by carbon products like CO, CO₂), thus it can be used directly in fuel cells. The results have shown that the cerium oxide two-step thermochemical cycle is a promising process for hydrogen production.