系列微波宽带放大器

介绍了反馈式放大器、平衡式放大器及行波式放大器等宽带放大器的工作原理,采用多种宽带电路结构设计制作了系列微波宽带放大器,进行了微波仿真,给出了设计过程及测试结果.频率覆盖2～18 GHz,分为2～8 GHz,4～8 GHz,8～12 GHz,12～18 GHz,6～18 GHz和2～18 GHz 6个品种,增益为10～30 dB,增益平坦度小于2 dB,输入输出驻波比小于2.5,1 dB压缩输出功率可达16 dBm.由于采用模块化设计,技术指标可以灵活调整,满足不同需要.该系列微波宽带放大器采用PHEMT管芯,微波薄膜工艺,封装在密封的金属盒体中,具有系列化、模块化和小型化的特点.     

集成宽带压控振荡器的设计

介绍了S波段、C波段集成宽带压控振荡器的设计方法和设计思路,进行了理论分析和数学模拟。通过利用Ansoft公司的Serenade8.5软件进行仿真、优化设计,获得了较好性能的宽带振荡器。给出了2-4GHz、4-8GHz宽带VCO最终达到的技术指标。     

1.9～5.7 GHz宽带低噪声BiCMOS LC VCO

设计了一种宽带、低相位噪声差分LC压控振荡器(VCO)。所设计的电路采用开关电容阵列和开关电感,实现了多波段振荡输出。对负阻环节跨导进行了优化设计,将热噪声控制在最小范围内,同时采用高品质因数片上螺旋电感,以减小电路的噪声干扰。采用台积电(TSMC)0.35μmSiGe BiCMOS工艺制作了流片,并进行了仿真和硬件电路实验。实测结果表明,当调谐电压为0～3.3 V时,可设定VCO工作在6个波段(1.9～2.1 GHz,2.1～2.4 GHz,2.4～3.0 GHz,3.0～3.4 GHz,3.4～4.2 GHz,4.2～5.7 GHz),此6波段连续可调,构成了1.9～5.7 GHz宽带VCO;VCO的中心频率为2.4 GHz、偏离中心频率为1 MHz时实测相位噪声为-111.64 dBc/Hz;在3.3 V电源电压下实测核静态电流约为1.8 mA,从而验证了宽带、低噪声BiCMOS LC VCO设计方案之正确性。     

单片集成的高频宽带LC VCO设计

设计了一款1.9~4.3 GHz的单片集成宽带VCO。采用三个低相位噪声LC VCO在频率上互相重叠的架构实现高频宽带特性,VCO内部集成中间抽头的差分电感。电路制造采用0.35μm SiGe BiCMOS工艺技术,VCO的工作频率达1.9~4.3 GHz,单元功耗仅为4 mA。在工作频率为2.46 GHz处,经过÷2分频器输出的相位噪声实测值为-97 dBc/Hz(100 kHz频偏下)。     

基于负阻MMIC的新型VCO研制

提出了一种基于负阻单片微波集成电路的新型压控振荡器(VCO)的设计方法,即负阻电路采用GaAs HBT工艺设计流片,调谐选频电路采用薄膜混合集成工艺制作。利用微封装技术将二者结合构成完整的VCO。这种新型VCO既具有单片微波集成电路的小型化、低成本的优势,又保持了薄膜混合集成电路可灵活调试的特性。通过设计流片数款在不同频段的负阻单片微波集成电路,可完成频率1～18 GHz、小型化、系列化VCO的研制。X波段宽带VCO的实测结果显示,当电调电压在2～13 V变化时输出频率覆盖8～12.5 GHz,调谐线性度为2∶1,电调电压5 V时相位噪声为-96 dBc/Hz@100 kHz。     

一种7GHz～20GHz宽带频率综合器的设计

文章介绍了一种PLL频率合成技术获得的7GHz～20GHz的宽频带、小步进、小体积、低杂散、低相噪的频率综合器的实现方法.该方法采用Hititte公司生产的宽带VCO HMC587LC4B和鉴相器HMC702LP6C,运用锁相倍频模式,在55mm×70mm×16mm的体积内实现了7GHz～20GHz的频率输出,并且达到...     

宽带HBT VCO单片电路的设计和制作

针对传统采用的VCO设计理论,分析了VCO的基本结构及其工作原理,分析了负阻法和反馈法的优缺点,采用虚地法对VCO电路进行了分析和设计,从而简化了VCO的设计。同时利用EDA工具对微波宽带VCO单片电路进行优化和仿真,采用多种方法提高芯片性能。基于HBT工艺,设计出了宽带、低相位噪声的VCO单片电路,芯片工作电压为5V,工作电流为50～58mA,VCO振荡频率为3.2～6.2GHz,相噪为-73dBc/Hz@10kHz,输出功率11～14dBm。同时还阐述了采用片上外加变容管的优缺点以及改进方法。     

一种基于键合线电感的LC-VCO设计方法

提出一种利用键合线电感设计VCO的方法,利用HFSS(High Frequency Structure Simulator)软件,建立电感仿真模型,在5 GHz以下与库模型相吻合.仿真结果表明,差分键合线电感受工艺偏差的影响小于15%,并提出一种减小互感的方式,使电感值在1～5 GHz范围内增加15%～175%.利用HFSS提取的等效电路,设计了一款输出频率为2～3.6 GHz的宽带压控振荡器(VCO),当工作在3.6 GHz时,1 MHz频偏处的相位噪声为-111 dBc/Hz,电流为1.5 mA.电路版图面积仅为0.1 mm2,较之采用片上电感的VCO(0.19 mm2),面积减小45%.     

C波段高频率稳定度宽带FET电压控制振荡器

本文叙述了用场效应振荡管和砷化镓常γ电调变容二极管及恒温控制电路等构成的C波段高频率稳定度宽带场效应管电压控制振荡器(VCO)的设计和电性能.通过合理的设计,VCO在4～6～8GHz的频率范围内,得到输出功率大于30mW,功率平坦度小于1dB,频率稳定度在10~(-5)量级.     

高集成度多频段器件

新器件可使WiMAX系统设计人员用一个射频设计为全球WiMAX部署所有常用宽带无线频段（450-928MHz、2．3～2．7GHz、2．7～2．9GHZ、3．3～3．8GHz以及4．9～5．95GHz）提供用户终端设备（CPE）和网络接口卡（MC）。     

5-GHz Low Power Current-Reused Balanced CMOS Differential Armstrong VCOs

This letter proposes 5-GHz low power differential Armstrong voltage controlled oscillators (VCOs) based on balanced topology. One designed VCO uses two single-ended Armstrong VCOs coupled to each other in parallel by balanced structure. The other current-reused VCO uses two single-ended Armstrong VCOs stacked in series. The former VCO oscillates from 4.96 to 5.34GHz and the power consumption is 3.9mW at 0.6-V supply voltage. The latter operates from 4.98 to 5.45GHz and dissipates 2.59mW at 1.8-V supply voltage. The measured phase noises are about -116.71dBc/Hz and -110.02dBc/Hz at 1-MHz offset frequency from 5.1-GHz band, respectively. The former and the latter VCO have an advantage of low power consumption and provide a good figure of merit of about -185dBc/Hz and -180dBc/Hz, respectively     

Fully integrated 5.35-GHz CMOS VCOs and prescalers

Two 5.35-GHz monolithic voltage-controlled oscillators (VCOs) and two prescalers have been fabricated in a digital 0.25-μm CMOS process. One VCO uses p⁺/n-well diodes, while the other uses MOS varactors, Q of 57 at 5.5 GHz and 0 V bias (low-Q condition) for a p ⁺/n-well varactor has been achieved. For an MOS varactor, it is possible to achieve a quality factor of 140 at 5.5 GHz. The tuning ranges of the VCOs are >310 MHz, and their phase noise is <-116.5 dBc/Hz at a 1-MHz offset while consuming ~7 mW power at V_DD=1.5 V. The low phase noise is achieved by using only PMOS transistors in the VCO core and by optimizing the resonator layout. The prescalers utilize a variation of the source-coupled logic. The power consumption is 4.1 mW at 1.5-V V_DD and 5.4 GHz. By widening the transistors in the first three divide-by-two stages, the maximum operating frequency is increased to 9.96 GHz at V_DD=2.5 V     

A 22-GHz push-push CMOS oscillator using micromachined inductors

This letter presents a low phase noise 0.35-/spl mu/m CMOS push-push oscillator utilizing micromachined inductors. This oscillator results in an improvement in phase noise compared with the previously published Si-based voltage-controlled oscillators (VCOs) around 20GHz. With the high-Q inductors introduced by the micromachined structure, the oscillator achieves an oscillating frequency of 22.2GHz while exhibiting an output power of -7.5dBm with a phase noise of -110.1dBc/Hz at 1-MHz offset. This work also demonstrates the highest operating frequency among previously published Si-based VCOs using micromachined structures.     

一种双带宽UHF主从耦合式LC VCO

为了满足无线通信系统应用需要,设计了一种主从耦合式LC压控振荡器(VCO).基于0.18 μm CMOS标准工艺,由一个5 GHz主VCO和两个起分频作用的从VCO组成,其中主VCO选用PMOS考毕兹差分振荡结构,在两个互补交叉耦合的从VCO的输出端之间设置有注入式NMOS器件以达到分频的目的.仿真及硬件电路实验结果表明,在1.8 V低电源电压下,5 GHz主VCO的调谐范围为4.68～5.76 GHz,2.5 GHz从VCO的调谐范围为2.32～2.84 GHz;在1 MHz的偏频下,5 GHz主VCO的相位噪声为118.2 dBc/Hz,2.5 GHz从VCO的相位噪声为124.4 dBc/Hz.另外,主从VCO的功耗分别为6.8 mW和7.9 mW,因此特别适用于低功耗、超高频短距离无线通信系统中.     

一种高速、宽动态范围检波器的研制

微波检波器具有结构简单、使用方便的特点,是射频微波领域的一种常用器件。基于微带混合电路技术,研制了一种高速、宽灵敏度动态范围的脉冲检波器。仿真设计了带宽为5.6~13.8 GHz的宽带带通滤波器和3 GHz的宽阻带低通滤波器作为检波器的输入输出电路。该检波器可以对6~12 GHz频段内、功率为-8~16 dBm的脉冲调制信号进行检波,灵敏度动态范围约25 dB,响应时间小于3~4 ns。     

8-GHz CMOS quadrature VCO using transformer-based LC tank

A fully integrated quadrature VCO at 8 GHz is presented. The VCO is implemented using a transformer-based LC tank in 0.18 /spl mu/m CMOS technology, in which two VCOs are coupled to generate I-Q signals. The VCO is realized employing the drain-gate transformer feedback configuration proposed here. This makes use of the quality factor enhancement in the resonator using a transformer and the deep switching-off technique by controlling gate bias. By turning off switching transistors of the differential VCO core deeply, the phase noise performance is improved more than 10 dB. The measured phase noise values are -110 and -117 dBc/HZ at the offset frequencies of 600 kHz and 1 MHz respectively. The tuning range of 250 MHz is achieved with the control voltage from 0 to 1 V. The VCO draws 8 mA in two differential core circuits from 3 V supply. When the bias voltage goes down to 2.5 V, the phase noise decrease only 2 dB compared to that of 3 V bias. The VCO performances are compared with previously reported quadrature Si VCOs in 5/spl sim/12 GHz frequency range.     

宽频带悬置线带通滤波器的研制

主要介绍了一种设计宽频带带通滤波器的新方法,即通过HFSS软件的本征模式求得悬置线交指滤波电路设计的初值,再经Designer软件建模优化,最终得到满足设计要求的滤波器电路。根据文中提供的设计方法,研制成功了通带分别为2～4GHz、4～8GHz、8～12GHz、12～18GHz的悬置线(SSS)带通滤波器,实测的滤波器响应曲线与仿真曲线吻合良好。该类滤波器电性能优良、成本低、体积小、易加工、易与微带电路集成,因而具有良好的应用前景。     

Voltage-controlled oscillators up to 98 GHz in SiGe bipolar technology

In this paper, two fully integrated voltage-controlled oscillators (VCOs) in a 200-GHz f/sub T/ SiGe bipolar technology are presented. The oscillators use on-chip transmission lines at the output for impedance transformation. One oscillator operates up to 98 GHz and achieves a phase noise of -85dBc/Hz at an offset frequency of 1 MHz. It can be tuned from 95.2 to 98.4 GHz and it consumes 12 mA from a single -5-V supply. The second oscillator operates from 80.5 GHz up to 84.8 GHz with a phase noise of -87dBc/Hz at 1-MHz offset frequency. The output power of both circuits is about -6dBm.     

Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive Radar systems and applications around 100 GHz

It is demonstrated that SiGe bipolar technologies are well suited for voltage-controlled oscillators (VCOs) in 77-GHz automotive radar systems. For this, the design of a VCO with powerful output buffer (with good decoupling capability and high output power), comparatively wide tuning range, and reasonably low phase noise is described. To achieve the required high output power, the potential operating range of the output transistors, limited by high-current effects and avalanche breakdown, respectively, had to be exploited using adequate transistor models. The VCOs need a single supply voltage only and have been fully integrated (including resonant circuit and output buffer) on a single small (1 mm/sup 2/) chip, demonstrating their low-cost potential. Experimental results showed, at a center frequency of around 77 GHz, a usable tuning range of 6.7 GHz and a phase noise of -97 dBc/Hz at 1-MHz offset frequency averaged over this range. In addition, the center oscillation frequency can be coarsely adjusted within a wide range by cutting links in the upper metallization layer. The total signal power delivered by both buffer outputs together is as high as 18.5 dBm at a power consumption of 1.2 W. Simulations let us expect a potential doubling of the output power (for two or four outputs) by extension of the output buffer. To get an impression of the maximum frequency achievable with the circuit concept and technology used, a second VCO (again with buffered output) has been developed. To the best of the authors' knowledge, the measured maximum oscillation frequency of about 100 GHz, at 12.4-dBm total output power (14.3 dBm at 99 GHz), is a record value for SiGe VCOs with buffered output operating at their fundamental frequency. The usable tuning range is still 6.2 GHz.     

SiGe Bipolar VCO With Ultra-Wide Tuning Range at 80 GHz Center Frequency

A SiGe millimeter-wave VCO with a center frequency around 80 GHz and an extremely wide (continuous) tuning range of 24.5 GHz ( ap 30%) is presented. The phase noise at 1 MHz offset is -97 dBc/Hz at the center frequency (and less than -94 dBc/Hz in a frequency range of 21 GHz). The maximum total output power is about 12 dBm. A cascode buffer improves decoupling from the output load at reasonable VCO power consumption (240 mW at 5 V supply voltage). A low-power frequency divider (operating up to 100 GHz) provides, in addition, a divided-by-four signal. As a further intention of this paper, the basic reasons for the limitation of the tuning range in millimeter-wave VCOs are shown and the improvement by using two (instead of one) varactor pairs is demonstrated.