50-Gb/s 4-b multiplexer/demultiplexer chip set using InP HEMTs

A 50-Gb/s 4:1 multiplexer (MUX) and 1:4 demultiplexer (DEMUX) chip set using InP high electron mobility transistors (HEMTs) is described. In order to achieve wide-range bit-rate operation from several to 50 Gb/s, timing design inside the ICs was precisely executed. The packaged MUX operated from 4 to 50Gb/s with >1-V/sub pp/ output amplitude, and the DEMUX exhibited >180/spl deg/ phase margin from 4 to 50 Gb/s for 2/sup 31/-1 pseudorandom bit sequence (PRBS). Furthermore, 50-Gb/s back-to-back error-free operation for 2/sup 31/-1 PRBS was confirmed with the packaged MUX and DEMUX.     

A redundant multivalued logic for a 10-Gb/s CMOS demultiplexer IC

A redundant multivalued logic is proposed for high-speed communication ICs. In this logic, serial binary data are received and converted into parallel redundant multivalued data. Then they are restored into parallel binary data. Because of the multivalued data conversion, this logic makes it possible to achieve higher operating speeds than that of a conventional binary logic. Using this logic, a 1:4 demultiplexer (DEMUX, serial-parallel converter) IC was fabricated using a 0.18-/spl mu/m CMOS process. The IC achieved an operating speed of 10 Gb/s with a supply voltage of only 1.3 V and with power consumption of 38 mW. This logic may achieve CMOS communication ICs with an operating speed several times greater than 10 Gb/s.     

4-bit multiplexer/demultiplexer chip set for 40-Gbit/s optical communication systems

We have designed and fabricated a low-power 4:1 multiplexer (MUX), 1:4 demultiplexer (DEMUX) and full-clock-rate 1:4 DEMUX with a clock and data recovery (CDR) circuit using undoped-emitter InP-InGaAs HBTs. Our HBTs exhibit an f/sub T/ of approximately 150 GHz and an f/sub max/ of approximately 200 GHz at a collector current density of 50 kA/spl mu/m/sup 2/. In the circuit design, we utilize emitter-coupled logic and current-mode logic series gate flip-flops and optimized the collector current density of each transistor to achieve low-power operation at required high bit rates. Error-free operation at bit rates of up to 50 Gbit/s were confirmed for the 4:1 MUX and 1:4 DEMUX, which dissipates 2.3 and 2.5 W, respectively. In addition, the full-clock-rate 1:4 DEMUX with the CDR achieved 40-Gbit/s error-free operation.     

Ultrahigh-speed heterojunction bipolar transistormultiplexer/demultiplexer ICs

High-speed 2-b monolithic integrated multiplexer (MUX) and demultiplexer (DMUX) circuits have been developed using self-aligned AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with improved high-speed performance. Both ICs were designed using emitter-coupled logic. The 2:1 MUX was composed of a D-type flip-flop (D-FF) merging a selector gate and a T-type flip-flop (T-FF). The 1:2 DMUX consisted of two D-FFs driven at a clock of half the rate of the input data. Error-free operation with a pseudorandom pattern was confirmed up to 10 Gb/s. The rise and fall times of the output signals of both ICs were 40 and 25 ps, respectively. HBT frequency dividers were used as inputs for both ICs in order to find the maximum operation speed. Although only a few test patterns were available, the maximum operation speeds of the MUX and DMUX were found to be around 15 and 19 Gb/s, respectively     

A 150 mW 8:1 MUX and a 170 mW 1:8 DEMUX for 2.4 gb/s optical-fibercommunication systems using n-AlGaAs/i-InGaAs HJFET's

An 8:1 multiplexer (MUX) and a 1:8 demultiplexer (DEMUX) for 2.4-Gb/s optical communication systems have been developed using 0.35-μm GaAs heterojunction field-effect transistors (FETs). To ensure timing margins, a new timing generator with latches and new clock buffers with cross-coupled inverters have been developed. These large-scale integrations (LSIs) operate at over 2.4 Gb/s with a power consumption of 150 mW (MUX) and 170 mW (DEMUX) at a supply voltage of 0.7 V, and at over 5 Gb/s with power consumption of 200 mW at a supply voltage of 0.8 V     

BiCMOS circuit technology for a 704 MHz ATM switch LSI

This paper describes BiCMOS level-converter circuits and clock circuits that increase VLSI interface speed to 1 GHz, and their application to a 704 MHz ATM switch LSI. An LSI with a high speed interface requires a BiCMOS multiplexer/demultiplexer (MUX/DEMUX) on the chip to reduce internal operation speed. A MUX/DEMUX with minimum power dissipation and a minimum pattern area can be designed using the proposed converter circuits. The converter circuits, using weakly cross-coupled CMOS inverters and a voltage regulator circuit, can convert signal levels between LCML and positive CMOS at a speed of 500 MHz. Data synchronization in the high speed region is ensured by a new BiCMOS clock circuit consisting of a pure ECL path and retiming circuits. The clock circuit reduces the chip latency fluctuation of the clock signal and absorbs the delay difference between the ECL clock and data through the CMOS circuits. A rerouting-Banyan (RRB) ATM switch, employing both the proposed converter circuits and the clock circuits, has been fabricated with 0.5 μm BiCMOS technology. The LSI, composed of CMOS 15 K gate logic, 8 Kb RAM, I Kb FIFO and ECL 1.6 K gate logic, achieved an operation speed of 704-MHz with power dissipation of 7.2 W     

Low-power 1:16 DEMUX and one-chip CDR with 1:4 DEMUX using InP-InGaAs heterojunction bipolar transistors

Using InP-InGaAs heterojunction bipolar transistor (HBT) technology, we have successfully designed and fabricated a low-power 1:16 demultiplexer (DEMUX) integrated circuit (IC) and one-chip clock and data recovery (CDR) with a 1:4 DEMUX IC for 10-Gb/s optical communications systems. The InP-InGaAs HBTs were fabricated by a nonself-aligned process for high uniformity of device characteristics and producibility. The 1:16 DEMUX IC and the one-chip CDR with the 1:4 DEMUX IC consist of approximately 1200 and 460 transistors, respectively. We have confirmed error-free operation at 10 Gb/s for all data outputs of both ICs. The 1:16 DEMUX IC and the one-chip CDR with the 1:4 DEMUX IC consume only 1 W and 950 mW, respectively. These results demonstrate the feasibility of InP-InGaAs HBTs for low power high-integration optical communication ICs.     

SiGe-HBT-based 54-gb/s 4:1 multiplexer IC with full-rate clock for serial communication systems

A 4:1 multiplexer (MUX) IC for 40 Gb/s and above operations in optical fiber link systems has been developed. The ICs are based on 122-GHz-f/sub T/ 0.2-/spl mu/m self-aligned selective-epitaxial-growth SiGe HBT technology. To reduce output jitter caused by clock duty distortion, a master-slave delayed flip-flop (MS-DFF) with full-rate clock for data retiming is used at the final stage of the MUX IC. In the timing design of the critical circuit for full-rate clocking, robust timing design that has a wide timing margin between data and clock at the MS-DFF was achieved. Measurements using on-wafer probes showed that the MUX attained 54-Gb/s operation with an output voltage-swing of 400 mVpp. The output rms jitter generated by the MUX was 0.91 ps and tr/tf (10%-90%) was 11.4/11.3 ps at a data rate of 50 Gb/s. Power consumption of the IC was 2.95 W at a power supply of -4.8 V. Error-free operation (<10/sup -12/) in back-to-back configuration of the MUX and a 1:4 DEMUX IC module at a data rate of 45 Gb/s was confirmed. We therefore concluded that the MUX IC can be applied for transmitter functions in optical-fiber-link systems at a data rate of 40 Gb/s and higher for forward error correction.     

A 30-gb/s 70-mW one-stage 4:1 multiplexer in 0.13-/spl mu/m CMOS

A completely integrated 4:1 multiplexer for high-speed operation and low power consumption is presented. The circuit uses a new architecture where four data streams are multiplexed in one stage. Pulses with a duty cycle of 25% switch the inputs to the multiplexer (MUX) output. The pulses are generated from the clock signal and the divided clock signal. Measurement results show the performance of the IQ divider. Current-mode logic is used because of the higher speed compared to static CMOS and the robustness against common-mode disturbances. The multiplexer uses no output buffer and directly drives the 50-/spl Omega/ environment. The lower number of gates compared to the conventional tree topology enables low-power design. Relaxed timing conditions are additional benefits of the one-stage MUX topology. The IC is fabricated in a 0.13-/spl mu/m standard bulk CMOS technology and uses 1.5-V supply voltage. The MUX works up to 30 Gb/s and consumes 70 mW.     

GaAs DCFL 2.5 Gbps 16-bit Multiplexer/Demultiplexer LSI's

GaAs 2.5 Gbps 16 bit MUX/DEMUX LSI's have been successfully developed. DCFL is employed as a basic gate in order to reduce the power dissipation. To avoid the speed degradation caused by using DCFL, various technologies such as 8×2(MUX)/2×8(DEMUX) data conversion processes, a Selector Merged Shift Register, clock overlapping, and a 0.7-μm BPLDD MESFET, have been introduced. Moreover the ECL I/O level interface and single power supply features make it easy to use MUX/DEMUX in optical communication systems. The maximum operating data rate is 3.2 Gbps for both LSI's, and the power dissipation of chips which operates with 2.5 Gbps are as low as 1.3 W for each MUX/DEMUX     

A 4-wavelength optical multi/demultiplexer for WDM subscriber loop systems using analog baseband video transmission

This paper describes the design principles and performance of optical multi/demultiplexers (MUX/DEMUX's) in wavelength-division multiplexing (WDM) subscriber-loop systems over a 50- μm core diameter, graded-index (GI), multimode fiber, which employ analog baseband video transmission using laser diodes (LD's). In this WDM arrangement, requirements for MUX/DEMUX's are: 1) low insertion loss; 2) no signal degradation caused by optical interchannel crosstalk; 3) only a small amount of analog baseband signal degradation caused by the use of MUX/DEMUX; 4) a small size and simple structure capable of multiplexing three or four wavelengths; and 5) good stability. The newly developed 4-wavelength MUX/DEMUX satisfies the preceding requirements and is suitable for application to WDM subscriber-loop systems using analog baseband signals along with digital signals.     

Design of a low-power 8 × 8-bit parallel multiplier using MOS current mode logic circuit

This paper proposes an 8?×?8 bit parallel multiplier using MOS current mode logic (MCML) for low power consumption. The 8?×?8 bit multiplier is designed with the proposed MCML full adders and the conventional full adders. The proposed multiplier is achieved to reduce the power consumption by 9.4% and the power-delay-product by 11.7% compared with the conventional circuit. The validity and effectiveness are verified through HSPICE simulation. The proposed multiplier is designed with the Samsung 0.35?μm standard CMOS process.     

A Comprehensive Delay Model for CMOS CML Circuits

MOS-transistor-based current-mode logic (CML)-type (MCML) circuits in high-speed circuit applications often operate as low-swing analog circuits rather than fully switched digital circuits. At these high-speed operations, the effect of the finite input signal slope on the delay of MCML gates significantly increases mainly due to incomplete current steering. Hence, for such cases, the conventional RC delay model which is based on ideal step input assumption fails to track the delay of MCML circuits with errors as high as 40% when a design is optimized for high-speed. In this paper, a comprehensive delay model is proposed that accurately predicts the delay of MCML circuits for all types of operation from low-speed and fully switched to high-speed and low-swing applications by including the input slope effect (ISE) into the conventional RC delay model. Furthermore, the proposed model is extended to multilevel complex logic gates without losing the general RC delay model format. Theoretical results are compared with Spice simulations in a 0.13-$mu{hbox {m}}$ CMOS technology. Results show that the error in delay of the proposed model is less than 20% for all practical designs. The proposed model is still sufficiently tractable to be use in back-of-envelope calculations that achieve close-to-optimum solutions without running extensive parametric simulations. In addition to the achieved accuracy and preserved simplicity, the proposed model enhances the intuitive understanding of MCML gates that simple RC delay model fails to provide.      

High-speed 8:1 multiplexer and 1:8 demultiplexer implemented withAlGaAs/GaAs HBTs

An 8:1 multiplexer (MUX) and 1:8 demultiplexer (DMUX) implemented with AlGaAs/GaAs heterojunction bipolar transistors are described. The circuits were designed for lightwave communications, and were demonstrated to operate at data rates above 6 Gb/s. These are among the fastest 8-b MUX-DMUX circuits ever reported. Each contains about 600 transistors and consumes about 1.5 W. The pair provides features such as resettable timing, data framing, and clock recovery circuitry, and a built-in decision circuit on the DMUX. Emitter-coupled logic (ECL) compatible input/output (1/O) signals are available. The circuits were implemented with bi-level current mode logic (CML) and require a -5.2-V power supply and a +1-V bias for ECL compatibility     

12Gb/s 0.25μm CMOS低功耗1:4分接器

实现了一种能运用于光传输系统SONET OC-192的低功耗单级分接器,其工作速率高达12Gb/s.该电路采用了特征栅长为0.25μm的TSMC混和信号CMOS工艺.所有的电路都采用了源极耦合逻辑,在抑制共模噪声的同时达到尽可能高的工作速率.该分接器具有利用四分之一速率的正交时钟来实现单级分接的特征,减少了分接器器件,降低了功耗.通过在晶圆测试,该芯片在输入12Gb/s长度为231-1伪随机码流时,分接功能正确.芯片面积为0.9mm×0.9mm,在2.5V单电源供电的情况下的典型功耗是210mW.     

用于光纤传输系统的10Gbit/s CMOS 1:8分接器

采用TSMC 0.25μm RF CMOS工艺设计了一个应用于光纤传输系统的10Gbit/s CMOS 1:8分接器.整个系统采用树型结构,由3级1:2分接器、2级1:2分频器、级间缓冲器和输入、输出接口电路构成.为了适应高速度的要求,所有电路全都采用源极耦合场效应管逻辑来实现.使用SmartSpice进行了仿真,结果表明:在电源电压为3.3V时,电路的最高工作速率可以达到10Gbit/s,电路功耗约为800mW.     

MOS current mode circuits: analysis, design, and variability

The interest in MOS current-mode logic (MCML) is increasing because of its ability to dissipate less power than conventional CMOS circuits at high frequencies, while providing an analog friendly environment. Moreover, automated design methodologies are gaining attention by circuit designers to provide shorter design cycles and faster time to market. This paper provides designers with an insight to the different tradeoffs involved in the design of MCML circuits to efficiently and systematically design MCML circuits. A comprehensive analytical formulation for the design parameters of MCML circuits using the BSIM3v3 model is introduced. In addition, a closed-form expression for the noise margin of two-level MCML circuits is derived. In order to verify the validity of the analytical formulations, an automated design methodology for MCML circuits is proposed to overcome the complexities of the design process. The effectiveness of the design methodology and the accuracy of the analytical formulations are tested by designing several MCML benchmarks built in a 0.18-/spl mu/m CMOS technology. The error in the required performance in the designed circuits is within 11% when compared to HSPICE simulations. A worst case parameter variations modeling is presented to investigate the impact of variations on MCML circuits as well as designing MCML circuits for variability. Finally, the impact of variations on MCML circuits is investigated with technology scaling and different circuit architectures.     

Over 80 Gbit/s 2:1 multiplexer and low power selector ICs using InP/InGaAs DHBTs

A 2:1 multiplexer (MUX) and low power selector ICs have been successfully designed and manufactured using an InP/InGaAs DHBT technology. The 2:1 MUX has been tested at data rates up to 80 Gbit/s with an output swing of 600 mV, while the selector IC has achieved operation speed up to 90 Gbit/s at a power consumption of only 385 mW.     

Standby/active mode logic for sub-1-V operating ULSI memory

New gate logics, standby/active mode logic I and II, for future 1 Gb/4 Gb DRAMs and battery operated memories are proposed. The circuits realize sub-l-V supply voltage operation with a small 1-μA standby subthreshold leakage current, by allowing 1 mA leakage in the active cycle. Logic I is composed of logic gates using dual threshold voltage (Vt) transistors, and it can achieve low standby leakage by adopting high Vt transistors only to transistors which cause a standby leakage current. Logic II uses dual supply voltage lines, and reduces the standby leakage by controlling the supply voltage of transistors dissipating a standby leakage current. The gate delay of logic I is reduced by 30-37% at the supply voltage of 1.5-1.0 V, and the gate delay of logic II is reduced by 40-85% at the supply voltage of 1.5-0.8 V, as compared to that of the conventional CMOS logic     

A 2.125-Gb/s BiCMOS fiber channel transmitter for serial datacommunications

A 2.125-Gb/s transmitter meeting the specifications of the emerging ANSI Fiber Channel standard has been developed using BiCMOS technology. This transmitter features (1) a fully bipolar 10:1 multiplexer (MUX) and a 2.125-GHz retimer for high-accuracy transmission of data, (2) an emitter-coupled logic (ECL) CMOS analog phase-locked loop, (3) pure ECL-level output for direct connection to the currently available optical modules, and (4) BiCMOS process technology that includes 0.25-μm CMOS devices and 20-GHz bipolar devices. The LSI serializes 32-bit-wide, 53.125-Mb/s data into 2.125-Gb/s data through a CMOS 8B10B encoder. The chip area is 3×2 mm², and the power dissipation is 860 mW