共查询到20条相似文献,搜索用时 156 毫秒
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本文分析了高压二极管、低频功率晶体管等器件在中子辐照后电参数退化规律。为提高这些器件的耐中子辐照能力,给出了这些器件结构参数的设计要求,以及这种结构特点的器件设计中需注意的有关问题。 相似文献
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对注入量为 1×1014cm-2 的快中子(1.2 MeV)对氮化镓(GaN)基白光发光二极管(LED)器件的辐照效应进行研究。通过测量和分析器件的电致发光谱(EL)、光功率-电流(L-I)和电流-电压(I-U)特性,发现器件辐照后光功率降低,而 EL 谱形状几乎没有变化,表明该注入量的中子辐照主要对器件中的蓝光 LED 芯片造成了损伤。进一步分析发现,中子辐照导致蓝光 LED 量子阱中产生大量非辐射复合中心,增加了漏电流并减小了量子阱中载流子密度,从而降低 LED 的输出光功率。由此,在原有 GaN 基蓝光 LED 等效电路模型的基础上,加入由中子辐照导致的影响因素,不仅有助于理解中子辐照对 LED 光功率的衰退影响机理,还为预测辐照后光功率的变化提供了可行性。 相似文献
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简要分析了IGBT器件的工作机理,对制作的20A/1050V IGBT芯片进行了中子辐照实验,并对比了辐照前后器件的关断特性,发现辐照可提高器件的开关速度,但也导致了器件有关特性的退化。 相似文献
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半导体宽频带放大器受中子辐照后,由于晶体管电流放大倍数减小而导致电路放大能力下降。本文利用变容二极管受中子辐照后其偏置电容要减小的特性。对一种宽频带放大器电路进行了抗中子加固设计。计算机模拟结果表明,经加固的宽频带放大器在达到1.35×10^14n/cm^2中子注量时,其放大能力也不会衰减。相对未加固电路,抗中子能力提高了许多。 相似文献
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建立了GaN HEMT器件(氮化镓高电子迁移率晶体管)中子原位测试技术和辐照效应实验方法,开展了GaN HEMT器件脉冲反应堆中子辐照效应实验研究,重点研究了电离辐射和位移损伤对器件性能退化的影响,获取了GaN HEMT中子位移损伤效应敏感参数和效应规律.结果表明,阈值电压、栅极泄漏电流以及漏极电流是中子辐照损伤的敏感... 相似文献
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GaN基增强型高速开关器件是提升X波段微系统集成放大器工作效率的核心器件.介绍了凹槽栅结构、F-注入等制作GaN基增强型器件的关键技术,同时分析了场板、介质栅等对器件击穿特性的影响.针对影响GaN基功率器件开关特性的主要因素,重点分析了提高增强型GaN基功率器件开关频率的主要技术途径.减小器件的接触电阻、沟道方块电阻可以降低器件电阻对频率的影响.小栅长器件中栅电容较低,电子的沟道渡越时间较短,也可以提高器件的频率特性.此外,由于GaN基的功率器件频率高,设计应用在GaN器件上的栅驱动电路显得尤为重要. 相似文献
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《Electron Device Letters, IEEE》1983,4(4):78-80
A new high power voltage-controlled differential negative resistance device using the LAMBDA bipolar transistor structure, called the LAMBDA bipolar power transistor, is proposed and studied. The basic structure of this new device consists of the simultaneous integration of an interdigitated bipolar junction transistor and a merged metal-oxide-semiconductor field effect transistor. Two basic interconnection configurations of the integrated devices are also discussed. Several interesting applications based on the fabricated devices are also demonstrated. It is shown that the proposed device can be used as power signal generator and amplitude modulator using very simple circuits. 相似文献
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对集成电路总剂量加固技术的研究进展进行了分析。集成电路技术在材料、器件结构、版图设计及系统结构方面的革新,促进了总剂量加固技术的发展。新的总剂量加固技术提高了集成电路的抗总剂量能力,延长了电子系统在辐射环境下的使用寿命。文中总结了近年来提出的新型的总剂量抗辐射加固技术,如采用Ag-Ge-S、单壁碳纳米管材料(SWCNT)、绝缘体上漏/源(DSOI)器件结构、八边形的门(OCTO)版图、备用偏置三模块冗余(ABTMR)系统等加固方法,显著提高了器件或电子系统的总剂量抗辐射能力。研究结果有助于建立完整的总剂量加固体系,提升抗辐射指标,对促进总剂量加固技术的快速发展具有一定的参考价值。 相似文献
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Xiangru Kong Bin Cui Wenkai Zhao Jingfen Zhao Dongmei Li Desheng Liu 《Organic Electronics》2014,15(12):3674-3680
Using nonequilibrium Green’s functions in combination with the density functional theory, we investigate the spin-dependent electronic transport properties of two nanostructure devices based on graphitic carbon nitrides bridging two zigzag graphene nanoribbons, i.e., center and edge bridged devices, respectively. It is found that the center bridged device behaves spin negative differential resistance properties in different bias ranges for the up and down spin current respectively. The edge bridged device presents obvious negative differential resistance only for the down spin current. Moreover, high spin-filtering efficiency over 80% is obtained in the edge bridged device in the bias range of 0–1.0 V. The magnetic properties of these devices suggest promising applications in spintronics and molecular electronics. 相似文献
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GaN基高电子迁移率晶体管(HEMT)器件具有抗高频、耐高温、大功率、抗辐射等特性,在核反应堆、宇宙探测等辐射环境中具有广阔的应用前景。借助SRIM软件仿真1.8 MeV质子辐射对不同AlGaN势垒层纵向尺寸下的常规耗尽型器件内部产生空位密度的影响,并观察空位密度随深度的变化规律。在最优AlGaN势垒层厚度条件下,通过仿真对比5种不同栅氧层材料的MIS-HEMT器件,发现氮化铝(AlN)栅氧层材料具有相对较好的抗辐射效果。 相似文献
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宽禁带SiC材料被认为是高性能电力电子器件的理想材料,比较了Si和SiC材料的电力电子器件在击穿电场强度、稳定性和开关速度等方面的区别,着重分析了以SiC器件为功率开关的电力电子装置对电力系统中柔性交流输电系统(FACTS)、高压直流输电(HVDC)装置、新能源技术和微电网技术领域的影响。分析表明,SiC电力电子器件具有耐高压、耐高温、开关频率高、损耗小、动态性能优良等特点,在较高电压等级(高于3 kV)或对电力电子装置性能有更高要求的场合,具有良好的应用前景。 相似文献
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《Electron Devices, IEEE Transactions on》1969,16(4):333-338
Integrated circuits employing MOS devices will play a vital role in tomorrow's civilian and military electronics if their degradation in a radiation environment can be eliminated. One possible approach toward alleviating radiation effects in MOS devices is to use a material with a defect structure that does not allow predominant trapping of either holes or electrons as a gate insulator. This has been done by constructing MOS devices with plasma-grown aluminum oxide. The Al2 O3 films are formed by first depositing aluminum on freshly cleaned and properly prepared silicon wafers. Subsequently this aluminum is oxidized in an oxygen plasma and device fabrication is then completed. The devices have excellent characteristics and stability, and their fabrication is not restricted by the conditions of the ultra-clean procedures necessary for SiO2 -Si devices. Exposure to 1-MeV electron bombardment at various fluence levels and bombardment-bias conditions shows that these structures possess remarkable radiation resistance. Up to a fluence of 1 × 1013e/cm2, under positive or negative bias, no oxide charge buildup or interface state generation is detectable. Above that fluence, only small shifts are observed. This indicates that an order of magnitude improvement in device hardening can be achieved by the use of this material. 相似文献
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A revision is presented of the technique to determine the junction temperature and thermal resistance of bipolar transistors. It is based on the temperature sensitivity of the base-emitter voltage when biasing the device under constant emitter current. It accounts correctly for the self-heating of the device during the measurement. Results are obtained for devices fabricated on silicon-on-insulator (SOI) and bulk silicon having different emitter widths and lengths. An increment of the thermal resistance is found for SOI devices with respect to bulk. 相似文献
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Design tradeoffs between surface and buried-channel FET's 总被引:1,自引:0,他引:1
《Electron Devices, IEEE Transactions on》1985,32(3):584-588
A study of the operation of surface- and buried-mode p-channel FET's is conducted. The buried-channel devices are fabricated using n-type polysilicon gates while the surface-channel devices employ p-type polysilicon gates. Using devices with different channel lengths (20 to 0.4 µm), threshold voltage lowering, subthreshold characteristics, transconductance, punchthrough, and body effects are compared over a wide range of background doping concentrations. In the study surface-channel devices were found to be more resistant to short-channel effects than their buried-channel counterparts independent of background doping concentration. Two-dimensional computer simulation revealed that buried-channel devices are more subject to drain-induced barrier lowering and bulk punchthrough. The body effect for the surface-channel device is lower than its counterpart at low background doping concentrations whereas the buried-channel device has a lower body effect at high background doping levels. The effective carrier mobility of buried-channel devices was found greater than that of surface devices. The net difference in the transconductance, however, is offset by the high parasitic diffusion resistance. 相似文献