20-GHz Band Monolithic GaAs FET Low-Noise Amplifier

A 20-GHs band monolithic GaAs FET low-noise amplifier has been developed. Design and fabrication were performed by obtaining the transmission properties of the microstrip lines on a semi-insulating GaAs substrate. The developed monolithic amplifier consists of a submicron gate GaAs MESFET and the input and output distributed matching circuits on a semi-insulating GaAs substrate measuring 2.75 mm x 1.45 mm. A noise figure of 6.2dB and an associated gain of 7.5 dB were obtained at 21 GHz without any additional tuning adjustments.     

5GHz 30W GaAs功率场效应晶体管

<正> 大功率高效率的GaAs场效应晶体管对雷达和数字通信系统中的放大器都是很重要的。输出功率20W的C波段GaAs功率FET已进入商用阶段。最近日本东芝公司微波固体部门报道了一种5GHz频带下输出功率大于30W的多芯片内匹配GaAs场效应晶体管。     

14～14.5 GHz 20 W GaAs PHEMT内匹配微波功率管

介绍了一种Ku波段内匹配微波功率场效应晶体管.采用GaAs PHEMT 0.25μm T型栅工艺,研制出总栅宽为14.4 mm的功率PHEMT管芯.器件由四管芯合成,在14～14.5 GHz频率范围内,输出功率大于20 W,附加效率大于27%,功率增益大于6 dB,增益平坦度为±0.3 dB.     

12GHz GaAs FET放大器

<正> 1983年南京固体器件研究所研制定型的GaAs FET,在频率高达12GHz时,有优良的微波性能。该器件的噪声系数最佳水平F_(min)≤1.5dB,已与近年来国际上同类产品的先进水平相当。此器件的研制成功,为制作卫星通讯中12GHz FET放大器解决了关键性器件。 WC60型GaAs FET是凹槽结构,栅长为0.5μm,采用1.8×1.8mm方形金属陶瓷管壳气密封装。该器件的典型“S”参数列于表1。     

110 GHz GaAs FET oscillator

A W-band GaAs FET oscillator has been demonstrated for the first time. A 75 ?m gate width device with sub-half-micrometre (0.2 ?m) electron-beam defined gates was used as a common-gate oscillator for operation in the 70 to 110 GHz frequency range. The highest oscillation frequency achieved was 110 GHz.     

WC94型C波段18W砷化稼内匹配场效应晶体管

ＷＣ９４型Ｃ波段１８Ｗ砷化稼内匹配场效应晶体管南京电子器件研究所于１９９４年底设计定型了ＷＣ９４型Ｃ波段砷化镓内匹配功率场效应晶体管。封面照片展示了该器件的微波测试系统和封装外形。该器件的输入和输出均已匹配到５０。器件的总栅宽为３８．４ｍｍ，由四枚管...     

0.5 W 2?21 GHz monolithic GaAs distributed amplifier

A novel circuit concept to reduce the gate loss using series capacitors on the gate feeding lines has been implemented for a distributed amplifier design. It has significantly increased the gate width of an amplifier with a resultant increase of the broadband output power and efficiency. A monolithic GaAs distributed amplifier using 6 × 300 ?m FETs has achieved a record output power of 0.5 W over the 2 to 21 GHz frequency band with at least 4 dB gain. The poweradded efficiency was 14%. The linear gain was 5 ± 1 dB over the same frequency band.     

Ku波段高功率GaAs FET

报导Ｋｕ波段高功率ＧａＡｓＦＥＴ的制造技术，包括全离子注入、０．５μｍ自对准栅、高可靠欧姆接触、干法生长和刻蚀、背面通孔、内匹配和合成技术。器件由两个９．６ｍｍ栅宽的芯片组成，在１１．２～１１．７ＧＨｚ频带内，一分口增益压缩输出功率８Ｗ，增益６ｄＢ，功率附加效率２４％。     

Low-Noise and Linear FET Amplifiers for Satellite Communications

FET amplifiers with ambient noise figures as low as 4.8 dB at 12 GHz, 35-dB gain, and intercept points as high as +28 dBm have been developed for use in communications satellites. Predicted mean time to failure is in excess of 10/sup 6/ h.     

Low-noise 10.7 GHz cooled GaAs FET amplifier

A three-stage gallium-arsenide field-effect transistor amplifier giving a noise temperature of 29 K (0.4 dB noise figure) at a physical temperature of 13 K is described. The amplifier utilises a novel modular construction with coaxial air-lines, sliding ?/4 transformers, and packaged NE13783 and MGF1403 FETs. Noise parameters of these devices at 300 K and 13 K are reported.     

A 22--24-GHz Cryogenically Cooled GaAs FET Amplifier

This paper describes the design and performance of a cryogenically cooled low-noise FET amplifier operating in the 22-24-GHz range. The amplifier employs five cascaded single-ended gain stages and an integral bandpass filter. Noise temperatures in the 200 K range with an associated gain of 28 dB are typical for the nine cooled units built to date.     

NEDI'''' C Band GaAs FET Power Amplifiers

<正> Application Mainly used as the replacement of travelling wave tube in microwave communication system and a power amplifier in a satellite communication earth station. Features It employs GaAs MESFETs and a microstrip structure, with Iow power consumption and high reliability.     

A low-noise 1.2–1.8 GHz cooled GaAs FET amplifier

A low-noise 1.2–1.8 GHz cooled GaAs FET amplifier with mixer bias circuit is reported. The amplifier noise temperature obtained at an ambient temperature of 20 K in the frequency range of 1.2–1.7 GHz is 10K. The lowest noise temperature is 4K. The gain is about 30 dB. An automatic measuring instrument for noise temperature was designed. The noise effect of the input cable and the error analysis of the total measurement were made. The total measurement error is 2 K.     

A K-Band GaAs FET Amplifier with 8.2-W Output Power

An 8.2-W GaAs FET amplifier with 38.6+-0.5-dB gain over a 17.7-19.1 GHz frequency band has been developed. This amplifier combines the outputs of eight multistage amplifier modules utilizing a radial combiner. This state-of-the-art power level has been achieved with AM/PM of less than 2°/dB. The third-order intermodulation products at 1-dB gain compression were 20 dBc, and variation in group delay over the frequency band was less than +-0.25 ns. Tests show that the amplifier is unconditionally stable and follows the graceful degradation principle.     

低噪声1.21.8GHz致冷FET放大器

本文介绍了低噪声1.21.8 GHz致冷FET放大器的研制工作。在20K环境温度下,带宽1.21.7GHz范围内,放大器噪声温度低于10K,最佳为4K。增益约30dB。设计了一个噪声温度自动测试系统。另外对输入电缆的噪声和总测量误差作了分析。测试总误差为2K。     

Computer Calculation of Large-Signal GaAs FET Amplifier Characteristics

A simple and efficient method of GaAs FET amplifier analysis is presented. The FET is represented by its circuit-type nonlinear dynamic model taking into account the device's main nonlinear effects including gate-drain voltage breakdown. An identification procedure for extraction of the model parameters is described in detail and examples are given. The calculation of the amplifier response to a single-input harmonic signal is performed using the piecewise harmonic balance technique. As this technique is rather time-consuming in its original form, the optimization routine used to solve the network equations was replaced by the Newton-Raphson algorithm. Characteristics calculated with the use of the proposed method are compared with experimental data taken for a microwave amplifier using a 2SK273 GaAs FET unit. Good agreement at 9.5 GHz over wide ranges of bias voltage and input power levels are observed.     

Self-Consistent GaAs FET Models for Amplifier Design and Device Diagnostics

A procedure has been developed for producing accurate and unique small-signal equivalent circuit models for carrier-mounted GaAs FET's. The procedure utilizes zero drain-source bias S parmeter tests to determine accurate values of carrier parasitics, and dc measurements to evaluate the FET's gate, source, and drain resistances. Subsequent S-parameter measurements at full bias are then used to resolve the FET into an equivalent circuit model that has only 8 unknown elements out of a possible 16. A technique for evaluating the frequency range of accurate data is presented and the FET model shown is useful well above the maximum frequency of measurement. Examples of device diagnostics are presented for RCA flip-chip mounted GaAs FET's.     

2～12GHz GaAs单片行波放大器

报道了一个全平面超宽带ＧａＡｓ单片行波放大器的研究结果。该单片电路的核心部件是四个３００μｍ栅宽的ＭＥＳＦＥＴ，整个电路拓扑结构简单，芯片面积为３．０ｍｍ×１．８ｍｍ。电路经优化设计后在２～１２ＧＨｚ范围内，小信号增益为５±１ｄＢ，输入输出电压驻波比≤１．７５。上述频率范围内输出功率≥１６ｄＢｍ，噪声系数≤８ｄＢ。采用全离子注入、全平面工艺，均匀性、一致性良好。实验结果与设计预计值十分一致。     

30/20 GHz Band SCPC Satellite Communication Using Small Earth Stations

This paper presents a domestic satellite communication system accommodating numerous 30/20 GHz band small earth stations emphasizing the system outline, the use of multiple-access (MA) techniques. It also describes associated earth station configurations, equipment performance, and experimental results using the Japanese CS (medium capacity communications satellite for experimental purposes). Two kinds of earth stations are employed in this system, a small earth terminal (SET) and a master earth station (MES). The SET, which has an antenna about 2 m in diameter, is placed near a subscriber. The MES, which has an 11.5 m diameter antenna, is connected to the terrestrial telephone network through a satellite telephone switching center (STC). There are about 50 two-way channels with bit rates of 32 kbits/s which are achieved through the use of a 30/20 GHz band transponder whose EIRP is about 71.5 dBm, aG/Tof about 2.7 dB/K and an SET's antenna diameter of 1.8 m. This results in a system availability of 99.5 percent under typical Japanese statistical rain attenuation data. To enable a demand-assigned MA technique to be employed in this system, a single channel per carrier (SCPC) is selected, taking into consideration power efficiency of the SET, flexibility of system configurations, and the adaptability of the adaptive power control during rainy periods.