Classification of lying states for the humanoid robot SJTU-HR1

The humanoid robot SJTU-HR1’s concept is introduced and its characteristics tree is given. The basic states for SJTU-HR1 are proposed, including lying, sitting, standing and handstanding, abstracted from the daily exercises of human beings. The G _F (generalized function) set theory is exploited to achieve the kinematic characteristics of the interested EEs (end-effectors) of SJTU-HR1 for the lying states. Finally, the results show that the large amounts of states can be described using the abbreviations in a systematic manner. Although we have focused on the application of the G _F set theory to humanoid robots, particularly the SJTU-HR1, this methodology can also be applied to quadruped robots and hexapedal robots, especially when the desired tasks are complex. Supported by the Natural Basic Research Program of China (“973”) (Grant No. 2006CB705400), the National Natural Science Foundation of China (Grant Nos. 60534020, 30770538), Joint Research Fund for Young Scholars in China and Abroad (Grant No. 50728503), and the Graduate Innovation Foundation of Shanghai Jiao Tong University     

Statistical values of valence electron structure parameters applied to research on phase transition temperature and eutectoid reaction of titanium alloy

Based on the empirical electron theory of solids and molecules (EET), the statistical values of valence electron structure parameters Sn _A and SE _A which can characterize the properties of alloy phases are calculated, and influences of alloying elements (e.g., V, Nb, Mo, Hf, Zr, Fe, Mn, Co, Cr, Si, and so on) on the phase transition temperature and eutectoid reaction of titanium alloy are discussed with the statistical values of valence electron structure parameters. The research results agree well with real situations. Supported by the National Natural Science Foundation of China (Grant No. 50471022, 50741004) and National Key Basic Research Program of China (“973”) (Grant No. 2007CB613807)     

Synthesis and oxidation behavior of boron-substituted carbon powders by hot filament chemical vapor deposition

Boron-substituted carbon powder, B _x C_1−x with x up to 0.17, has been successfully synthesized by hot filament chemical vapor deposition. The boron concentration in prepared B _x C_1−x samples can be controlled by varying the relative proportions of methane and diborane. X-ray diffraction, transmission electron microscopy, and electron energy loss spectrum confirm the successful synthesis of an amorphous BC₅ compound, which consists of 10–20 nm particles with disk-like morphology. Thermogravimetry measurement shows that BC₅ compound starts to oxidize approximately at 620°C and has a higher oxidation resistance than carbon. Supported by the National Natural Science Foundation of China (Grant Nos. 10474083, 50472051, 50532020, 50672081) and the National Basic Research Program of China (Grant No. 2005CB724400)     

Understanding of the influence of process parameters on the heat transfer behavior at the metal/die interface in high pressure die casting process

The current paper focuses on the influence of the process parameters on the peak values of the inter-facial heat transfer coefficient (IHTC) at metal/die interface during high pressure die casting (HPDC) process. A "step shape" casting and AM50 alloy were used during the experiment. The IHTC was de-termined by solving the inverse thermal problem based on the measured temperature inside the die. Results show that the initial die surface temperature (IDST, TDI) has a dominant influence while the casting pressure and fast shot velocity have a secondary influence on the IHTC peak values. By curve fitting, it was found that the IHTC peak value (hmax) changes as a function of the IDST in a manner of hmax =eαTγDI. Such relationship between the IHTC peak value and the IDST can also be found when the casting alloy is ADC12, indicating that this phenomenon is a common characteristic in the HPDC process.     

Fabrication and magnetic properties of Sm3(Fe,Ti)29Nx/α-Fe dual-phase nanocomposite permanent magnetic material

Sm3(Fe,Ti)29Nx/α-Fe dual-phase nanometer magnetic material was fabricated through rapid solidification, crystallization and nitridation of Sm-Fe (Ti) alloy. The effect of combination of rapid solidification and Ti alloy addition on the phase formation and microstructure of the Sm-Fe alloy is investigated in this paper. The microstructure of amorphous phase and dual-phase nano-grain crystals before and after crystallization annealing were observed using a high-resolution transmission electron microscope (HREM). The dual-phase nano-grains after annealing were compacted together with a clear interface with the direct exchange-coupling mechanism. Different annealing processes were used to examine the melt-spun alloy. Comparison of the images of SEM showed that annealing at 750℃ for 10 min was most suitable to get homogeneous and nano-grains. No obvious kink was detected in the second quadrant of the hysteresis loop like a single hard magnet, and strong exchange coupling was found between hard magnets and soft magnets.     

Theoretical calculation and experimental study of influence of oxygen vacancy on the electronic structure and hemocompatibility of rutile TiO2

In this work, the relationship between electronic structure and hemocompatibility of oxygen deficient rutile TiO_2−x was studied by both theoretical calculation and experimental study. Based on the local density functional theory, first-principals method was performed to calculate the electronic structure of rutile TiO₂ with different oxygen vacancy concentration. In the range of less than 10% of (or equal) physically realistic O vacancy concentration, the band gap of rutile TiO₂ increases with increasing O vacancy concentration, leading the TiO₂ changes from a p-type to an n-type semiconductor. The valance band of TiO₂ is predominated by O 2p orbital, while the conduction band is occupied by Ti 3d orbital for different O vacancy concentration. The O vacancy results in the occupation of electrons at the bottom of conduction band of TiO₂, and the donor density increases with increasing O vacancy concentration. When materials come in contact with blood, the n-type semiconductor feature of oxygen deficient TiO_2−x with the bottom of conduction band occupied by electrons would prevent charge transfer from fibrinogen into the surface of materials, thus inhibiting the aggregation and activation of platelets, therefore improving the hemocompatibility of rutile TiO_2-x . Supported by the National Basic Research Program of China (Grant No. 2005CB623904), National High-Tech Research Program of China (Grant No. 2006AA02A139) and National Natural Science Foundation of China (Grant No. 20603027)     

Study of GaN MOS-HEMT using ultrathin Al2O3 dielectric grown by atomic layer deposition

We report on a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using atomic-layer deposited (ALD) Al₂O₃ as the gate dielectric. Through further decreasing the thickness of the gate oxide to 3.5 nm and optimizing the device fabrication process, a device with maximum transconductance of 150 mS/mm was produced. The drain current of this 0.8 μm gate-length MOS-HEMT could reach 800 mA/mm at +3.0 V gate bias. Compared to a conventional AlGaN/GaN HEMT of similar design, better interface property, lower leakage current, and smaller capacitance-voltage (C-V) hysteresis were obtained, and the superiority of this MOS-HEMT device structure with ALD Al₂O₃ gate dielectric was exhibited. Supported by the National Natural Science Foundation of China (Grant No. 60736033) and the National Basic Research Program of China (“973“) (Grant No. 51327020301)     

Photocatalytic performance of TiO<Subscript>2</Subscript> thin films connected with Cu micro-grid

Aiming at reducing the recombination of photo-induced carriers in semiconductor photocatalytic process, we prepared TiO₂ thin film with its surface modified by a connected Cu micro-grid via a microsphere lithography strategy, which showed higher photocatalytic activity than the pure TiO₂ film. The improvement of photocatalytic activity of Cu micro-grid to the TiO₂ film is due to the charge carrier separation and electron transfer by the conducting metal grid. The photocatalytic activity was improved as metal loading increased, which obtained the best performance at a certain loading amount, and then decreased at higher loading amount. This phenomenon was attributed to the metal’s bulk effect which could be explained by the relationship between the energetic positions and the metal cluster size. Supported by the National Natural Science Foundation of China (Grant Nos. 50672003, 50872005) and the National Basic Research Program of China (“973” Project) (Grant No. 2007CB613302) and the Fok Ying Tong Education Foundation (Grant No. 111050)     

Numerical simulation and analysis of water flow over stepped spillways

Numerical simulation of water flow over the stepped spillway is conducted using Mixture multiphase flow model. Different turbulence models are chosen to enclose the controlling equations. The turbulence models investigated are realizable k-ε model, SST k-ω model, v2-f model and LES model. The computational results by the four turbulence models are compared with experimental ones in the following aspects: mean velocity, the spanwise vorticity and the growth of the turbulent boundary layer thickness in the st...     

Novel asymmetrical twin-core photonic crystal fiber for gain-flattened Raman amplifier

A novel asymmetrical twin-core photonic crystal fiber was proposed, whose effective overlap core area A _eff can be designed to synchronize the variation of Raman gain coefficient with respect to frequency. This fiber possesses a higher and flatter Raman gain efficiency coefficient curve r _R=g _R/A _eff over a specified band of wavelength than a conventional fiber. Therefore, it is a good candidate of gain medium for a flat, broad gain band fiber Raman amplifier. It was numerically demonstrated that for the Raman gain efficiency r _R, relative fluctuations of less than 2.2% and 5.7% are achievable in the C (1530−1565 nm) band and L (1565−1625 nm) band, respectively. Supported by the National Natural Science Foundation of China (Grant Nos. 60588502, 60607005, 60877033), the Science and Technology Bureau of Sichuan Province (Grant No. 2006z02-010-3) and the Youth Science and Technology Foundation of UESTC (Grant No. JX0628)     

Microstructure and formation mechanism of twins of laths of austenite with high nitrogen

The microstructure of composite diffusion layer of the nitrided and chromized 0.2% carbon steel is investigated using TEM and EDS. It is found that laths of austenite with high nitrogen (λN) precipitate from α-ferrite matrix in the deeper zone of the diffusion layer. These λN laths are all twins, with their {111} twinning planes parallel to the lath axis, thus forming a characteristic "back-to-back" morphology. There are two types of λN lath. The first is a genuinely {111} twin, and λN and α keep the accurate K-S relationship, and each λN and α form a sharp and smooth λN/α interface of {335}λN//{341}a, namely habit plane {335}fcc. The second is a pseudo-twin, with micro-twins {111} or faults formed within the two twin components. Localized lattice deformation (relaxation) seems to have occurred at the interfaces of the second type of λN due to the formation of micro-twins or faults within the twin components. These micro-twins or faults make the orientation relationship (OR) between each of the λN and the (-matrix deviate from the accurate K-S OR, and the OR between two λN twin components deviate from the genuine {111} twin relationship. In addition, the λN/α interface of the second type of λN is not as sharp or smooth as that of the first one.     

Study on the thermal stability and electrical properties of the high-k dielectrics (ZrO2)x(SiO2)1?x

(ZrO₂) _x (SiO₂)_1−x (Zr-Si-O) films with different compositions were deposited on p-Si(100) substrates by using pulsed laser deposition technique. X-ray photoelectron spectra (XPS) showed that these films remained amorphous after annealing at 800°C with RTA process in N₂ for 60 s. The XPS spectra indicated that Zr-Si-O films with x=0.5 suffered no obvious phase separation after annealing at 800°C, and no interface layer was formed between Zr-Si-O film and Si substrate. While Zr-Si-O films with x >0.5 suffered phase separation to precipitate ZrO₂ after annealing under the same condition, and SiO₂ was formed at the interface. To get a good interface between Zr-Si-O films and Si substrate, Zr-Si-O films with bi-layer structure (ZrO₂)_0.7(SiO₂)_0.3/(ZrO₂)_0.5(SiO₂)_0.5/Si was deposited. The electrical properties showed that the bi-layer Zr-Si-O film is of the lowest equivalent oxide thickness and good interface with Si substrate. Supported by the National Nature Science Foundation of China (Grant No. 60636010) and the National Basic Research Program of China (“973” Program) (Grant No. 2004CB619004)     

Dielectric tunable properties of BaTi<Subscript>4</Subscript>O<Subscript>9</Subscript>-doped Ba<Subscript>0.6</Subscript>Sr<Subscript>0.4</Subscript>TiO<Subscript>3</Subscript> microwave composite ceramics

BaTi₄O₉-doped Ba_0.6Sr_0.4TiO₃ (BST) composite ceramics were prepared by the conventional solid-state reaction and their structure, dielectric nonlinear characteristics and microwave dielectric properties were investigated. The secondary phase of the orthorhombic structure Ba₄Ti₁₃O₃₀ is formed among BST composite ceramics with the increase of BaTi₄O₉. At the same time, a duplex or bimodal grains size distribution shows fine grains in a coarse grain matrix. The degree of frequency dispersion of dielectric permittivity below T _m is increased initially and then decreased with respect to BaTi₄O₉. As the BaTi₄O₉ content increases, the tunability of composite ceramics decreases, while the Q value increases. Interestingly, 70 wt% BaTi₄O₉-doped BST has a tunability ∼4.0% (under 30 kV/cm biasing) versus a permittivity ∼68 and quality factor ∼134.1 (at ∼3.2 GHz). Supported by the Ministry of Science and Technology of China through 973-project (Grant No. 2009CB623302), the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No.707024), Shanghai Committee of Science and Technology (Grant No. 07DZ22302), and Shanghai Foundation Project under 06JC14070     

Microstructural evolution during aging of Ti-5Al-5Mo-5V-1Cr-1Fe alloy

The evolution of microstructure on aging of an (α+β) titanium alloy (Ti-5Al-5Mo-5V-1Cr-1Fe) in the β and (α+β) solution-treated and quenched conditions was investigated. The presence of very fine ω phase was detected by electron diffraction for samples aged below 400 °C. The fine α aggregates are uniformly formed within β grains by nucleating at the ω particles or β/ω interfaces. At higher temperature, the formation of ω phase is avoided and the α lamellae are precipitated at the preferred site of grain boundary and then within the matrix. The highest hardness values are found when the alloys are aged at 450 °C for β condition and 350 °C for (α+β) condition. Foundation item: Project (50634030) supported by the National Natural Science Foundation of China; Project (2007DS04014) supported by the Program of Science and Technology of Shandong Province, China; Project supported by the Open Research Fund from the State Key Laboratory of Rolling and Automation, Northeastern University, China     

Effect of coagulation temperature on structures and properties of poly(<Emphasis Type="Italic">p</Emphasis>-phenylene benzobisoxazole) (DHPBO) fibers during dry-jet wet-spinning process

The effect of coagulation temperature on the morphology, microstructures and mechanical properties of dihydroxy poly(p-phenylene benzobisoxazole) (DHPBO) fibers was investigated during dry-jet wet-spinning process, in which the coagulation bath concentration and drawn ratio were kept as 10 wt% of PPA in water and 1.7, respectively. The structures and mechanical properties of the as-spun DHPBO fibers were characterized by FTIR, XRD, SEM, and single fiber tensile testing. The results indicated that in PPA/H₂O coagulation system, when the coagulation temperature was 25°C, highly crystallized DHPBO as-spun fibers possessing fine crystallites, circular and smooth morphology, and excellent mechanical properties could be achieved. Supported by the National Natural Science Foundation of China (Grant No. 50673017), Shanghai Leading Academic Discipline Project (Grant No. B603) and the Program of Introducing Taleuts of Discipline to University of People’s Republic of China (“111” Program) (Grant No. 111-2-04)     

Dendrite crystal morphology evolution mechanism of <Emphasis Type="Italic">β</Emphasis>-BaB<Subscript>2</Subscript>O<Subscript>4</Subscript> crystal

Existence of [B₃-O₆]³⁻ hexagonal ring growth unit in melt solution of β-BaB₂O₄ crystal was proved by the results of high temperature Raman measurements. A morphology evolution process of β-BaB₂O₄ crystal was observed by a high temperature in-situ observation device. The crystal morphology varied with the supersaturation of growth melt solution. The mechanism of β-BaB₂O₄ crystal morphology evolution was analyzed through the growth unit model. Supported by the National Natural Science Foundation of China (Grant No. 60808026) and the Nanjing University of Aeronautics and Astronautics Scientific Research Fund (Grant No. S0764-081)     

Relaxor behavior and electrical properties of high dielectric constant materials

Several typical high dielectric constant materials are reviewed to study the electrical properties and relaxation mechanism. It is found that a Lorenz-type law can be used to describe the dielectric permittivity of either the normal ferroelectrics with or without diffuse phase transitions (DPT) or the typical ferroelectric relaxors. The ferroelectric DPT can be well described by just one fitting process using the Lorenz-type law, while the relaxor ferroelectric transition needs two independent fitting processes. The Lorenz-type law fails at the low temperature side of the dielectric maximum of a first-order ferroelectric phase transition. Above the transition temperature, the dielectric curves of all the studied materials can be well described by a Lorenz-type law. Supported by the National Natural Science Foundation of China (Grant No. 50672075), New Century Excellent Talents (Grant No. 05-087), Natural Science Foundation of Northwestern Polytechnical University (Grant No. 200703), Xi’an Science & Technology Foundation (Grant No. CXY08006) and 111 Project (Grant No. B08040)     

New development of Einstein＇s viscose law for powder suspension systems

Through the analysis of the present situation of the rheology of suspension disperse systems, the classical Einstein‘s viscosity law was developed into the generalized Einstein‘s viscosity law which can be further developed into universalized form, called the universalized Einstein‘s viscosity law by introducing modification function f(φ). Some rational forms of the function f(φ) were discussed according to functional approximation method, and were consequently developed into a few suspension disperse system rheological equations suitable for high particle concentration. These equations all keep good consistence with the models acquired in experiments or other mathematical physics analysis.     

Roles of initial current carrier in the distribution of field-aligned current in 3-D Hall MHD simulations

A three-dimensional (3-D) Hall MHD simulation is carried out to study the roles of initial current carrier in the topology of magnetic field, the generation and distribution of field aligned currents (FACs), and the appearance of Alfvén waves. Considering the contribution of ions to the initial current, the topology of the obtained magnetic field turns to be more complex. In some cases, it is found that not only the traditional B _y quadrupole structure but also a reversal B _y quadrupole structure appears in the simulation box. This can explain the observational features near the diffusion region, which are inconsistent with the Hall MHD theory with the total initial current carried by electrons. Several other interesting features are also emerged. First, motions of electrons and ions are decoupled from each other in the small plasma region (Hall effect region) with a scale less than or comparable with the ion inertial length or ion skin depth d _i =c/ω _p . In the non-Hall effect region, the global magnetic structure is shifted in +y direction under the influence of ions with initial y directional motion. However, in the Hall effect region, magnetic field lines are bent in −y direction, mainly controlled by the motion of electrons, then B _y is generated. Second, FACs emerge as a result of the appearance of B _y . Compared with the prior Hall MHD simulation results, the generated FACs shift in +y direction, and hence the dawn-dusk symmetry is broken. Third, the Walén relation in our simulations is consistent with the Walén relation in Hall plasma, thus the presence of Alfvén wave is confirmed. Supported by the National Natural Science Foundation of China (Grant Nos. 40474058 and 40536030), the Key Project of the National Natural Science Foundation of China (Grant No. 40390152), Chinese Fundamental Research Project (Grant No. G200000784), Chinese Key Research Project (Grant No. 2006CB805305), and the Key Displine Project of Beijing     

High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by high-pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality μc-Si:H films have been achieved with a high deposition rate of 7.8 ?/s at a high pressure. The V _oc of 560 mV and the FF of 0.70 have been achieved for a single-junction μc-Si:H p-i-n solar cell at a deposition rate of 7.8 ?/s. Supported by the National Natural Science Foundation of China (Grant No. 50662003) and the State Development Program for Basic Research of China (Grant No. G2000028208)