Measurement and calculations of long-lived radionuclide activity forming in the fast neutron field in some ITER construction steels

Measurement and calculations of long-lived gamma-emitting radionuclide activity forming in the fission reactor fast neutron field were done, for some ITER construction steels. The activation was conducted in fast neutron irradiation channel of the MARIA research fission reactor (Poland). The dimensions of steel samples were 10 mm × 10 mm × 1 mm and mass was approximately 0.8 g. The neutron flux density was measured by means of activation foil method and unfolding technique; fraction of neutrons above 1 keV was 95%. The activation lasted 242 h and cooling took 100 days; the mean neutron flux density was 2.9E12 n/(cm² s) (neutrons above 500 keV are 53% of total) whereas total fluency 2.53E18 cm⁻². The activity measurements were done by means of gamma-ray spectrometry. Activity calculations were done by means of FISPACT-II code using the activation libraries EAF-2010 and TENDL-2011 and experimentally determined neutron flux. Measured activity of long-lived gamma emitting radionuclides was, in average, about 6.3 MBq/g 100 days after activation; the dominant radionuclides were ⁵⁸Co and ⁵⁴Mn (about 81% and 14% of total activity respectively). The C/E ratio differs for particular radionuclides and is in the range 0.86–0.92 for ⁵¹Cr, 0.93–1.21 for ⁵⁴Mn, 0.77–0.98 for ⁵⁷Co, 0.91–1.21 for ⁵⁸Co, 1.17–1.27 for ⁵⁹Fe, and 1.75–2.44 for ⁶⁰Co.     

SHI induced re-crystallization of Ge implanted SiO2 films

Ge nanocrystals embedded in SiO₂ matrix have been synthesized by swift heavy ion irradiation of Ge implanted SiO₂ films. In the present study, 400 keV Ge⁺ ions were implanted into SiO₂ films at dose of 3 × 10¹⁶ ions/cm² at room temperature. The as-implanted samples were irradiated with 150 MeV Ag¹²⁺ ions with various fluences. Similarly 400 keV Ge⁺ ions implanted into Silicon substrate at higher fluence at 573 K have been irradiated with 100 MeV Au⁸⁺ ions at room temperature (RT). These samples were subsequently characterized by XRD and Raman to understand the re-crystallization behavior. The XRD results confirm the presence of Ge crystallites in the irradiated samples. Rutherford backscattering spectrometry (RBS) was used to quantify the concentration of Ge in the SiO₂ matrix. Variation in the nanocrystal size as a function of ion fluence is presented. The basic mechanism of ion beam induced re-crystallization has been discussed.     

Doping of 6H–SiC pn structures by proton irradiation

The influence of proton irradiation on current–voltage characteristics, N_d − N_a values and parameters of deep centres in 6H–SiC pn structures grown by sublimation epitaxy has been studied. The irradiation was carried out with 8 MeV protons in the range of doses from 10¹⁴ to 10¹⁶ cm⁻². Irradiation with a dose of 3.6 × 10¹⁴ cm⁻² leaves the voltage drop at high forward currents (10 A/cm²) practically unchanged. For higher irradiation dose of 1.8 × 10¹⁵ cm⁻², the forward voltage drop and the degree of compensation in the samples increased ; partial annealing of the radiation defects and partial recovery of the electrical parameters occurred after annealing at T∼400–800 K. Irradiation with a dose of 5.4 × 10¹⁵ cm⁻² resulted in very high resistance in forward biased pn structures which remained high even after heating to 500°C. It is suggested that proton irradiation causes decreasing of the lifetime and formation of an i- or an additional p-layer.     

Point defects induced in ion irradiated 4H–SiC probed by exciton lines

The defects produced in 4H–SiC epitaxial layers by irradiation with a 200 keV H⁺ ion beam in the fluence range 6.5 × 10¹¹–1.8 × 10¹³ ions/cm² are investigated by Low Temperature Photoluminescence (LTPL–40 K).The defects produced by ion beam irradiation induce the formation of some sharp lines called “alphabet lines” in the photoluminescence spectra in the 425–443 nm range, due to the recombination of excitons at structural defects.From the LTPL lines intensity trend, as function of proton fluence, it is possible to single out two groups of peaks: the P₁ lines (e, f, g) and the P₂ lines (a, b, c, d) that exhibit different trends with the ion fluence. The P₁ group normalized yield increases with ion fluence, reaches a maximum at 2.5 × 10¹² ions/cm² and then decreases. The P₂ group normalized yield, instead, exhibits a formation threshold at low fluence, then increases until a maximum value at a fluence of 3.5 × 10¹² ions/cm² and decreases at higher fluence, reaching a value of 50% of the maximum yield.The behaviour of P₁ and P₂ lines, with ion fluence, indicates a production of point defects at low fluence, followed by a subsequent local rearrangement creating complex defects at high fluence.     

The use of NRA to study thermal diffusion of helium in (U, Pu)O2

A lot of work has been already done on helium atomic diffusion in UO₂ samples, but information is still lacking about the fate of helium in high level damaged UOX and MOX matrices and more precisely their intrinsic evolutions under alpha self irradiation in disposal/storage conditions.The present study deals with helium atomic diffusion in actinide doped samples versus damage level. The presently used samples allow a disposal simulation of about 100 years of a UOX spent fuel with a 60 MW d kg^?1 burnup or a storage simulation of a MOX spent fuel with a 47.5 MW d kg^?1 burnup.For the first time, nuclear reaction analysis of radioactive samples has been performed in order to obtain diffusion coefficients of helium in (U, Pu)O₂. Samples were implanted with ³He⁺ and then annealed at temperatures ranging from 1123 K to 1273 K. The evolution of the ³He depth profiles was studied by the mean of the non-resonant reaction: ³He(d, p)⁴He. Using the SIMNRA software and the second Fick’s law, thermal diffusion coefficients have been measured and compared to the ³He thermal diffusion coefficients in UO₂ found in the literature.     

Swift heavy ion induced modifications of optical and microstructural properties of silver–fullerene C60 nanocomposite

In this paper, we study the optical and microstructural properties of silver–fullerene C₆₀ nanocomposite and their modifications induced by swift heavy ion irradiation. Silver nanoparticles embedded in fullerene C₆₀ matrix were synthesized by co-deposition of silver and fullerene C₆₀ by thermal evaporation. The nanocomposite thin films were irradiated by 120 MeV Ag ions at different fluences ranging from 1 × 10¹² to 3 × 10¹³ ions/cm². Optical absorption studies revealed that the surface plasmon resonance of Ag nanoparticles showed a blue shift of ～49 nm with increasing ion fluence up to 3 × 10¹³ ions/cm². Transmission electron microscopy and Rutherford backscattering spectroscopy were used to quantify particle size and metal atomic fraction in the nanocomposite film. Growth of Ag nanoparticles was observed with increasing ion fluence. Raman spectroscopy was used to understand the effect of heavy ion irradiation on fullerene matrix. The blue shift in plasmonic wavelength is explained by the transformation of fullerene C₆₀ matrix into amorphous carbon.     

Tailoring the spring constant of Si nanorod structures using swift heavy ion irradiation

This study reports a post-deposition technique of engineering the mechanical properties of cantilever-like silicon nanorods by using swift heavy ion irradiation. Slanted silicon nanorods grown by glancing angle deposition technique on a patterned Si(1 0 0) substrate are irradiated by 100 MeV Ag⁺⁸ ions at a fluence of 10¹⁴ ions cm^?2. The average spring constant (k) of the nanorods determined by force–distance spectroscopy reduces to 65.6 ± 20.8 Nm^?1 post-irradiation as compared to 174.2 ± 26.5 Nm^?1 for pristine nanorods. Scanning electron micrographs show bending of the Si nanorods after irradiation. Micro-Raman and high-resolution transmission electron microscope studies on pristine and irradiated Si nanorods confirm the transformation of nanocrystalline regions present in pristine nanorods to amorphous phase on irradiation. This structural transformation and bending of the nanorods are responsible for the observed changes in the mechanical properties post-irradiation. The technique offers a simpler possibility of tailoring mechanical properties of nanostructures post-deposition by ion irradiation.     

129I AMS at 0.5 MV tandem accelerator

The ¹²⁹I measurement program has been established at the 0.5 MV ‘Tandy’ accelerator of the PSI/ETH Zürich AMS facility. This development was made possible by using a SiN window instead of Mylar one in a gas ionization detector. The setting up of the ¹²⁹I measurement at Tandy is simple, the acquired performance is stable and reliable, and the quality of results is equal to or better than at our larger EN-tandem. With this setup, high sample throughput, which is required in many ¹²⁹I studies, can be easily achieved. The measurements are performed in the +3 charge state. At this charge state the major difficulty in the ¹²⁹I⁺³ identification is caused by a highly abundant 43⁺¹ (m = 43, q = +1) molecule interference. This is a positive molecular ion, because its intensity reduces exponentially with an increase in gas stripper pressure. We conclude that this molecule is ²⁷Al¹⁶O⁺ (m/q = 43/1 = 129/3) and comes from the break-up of (Al₂O₃ + Al)^? (m = 129) precursor at the terminal: (Al₂O₃ + Al)^? → ²⁷Al¹⁶O⁺. The expected isobaric interferences ⁴³Ca⁺¹ and ⁸⁶Sr⁺², which also originate from the break-up of molecules in the stripper, were found to be low and do not disturb the ¹²⁹I⁺³ measurements. The best repeatable performance with our standard sample material was achieved at 0.14 μg/cm² Ar gas stripper pressure with machine blanks showing ～6 × 10^?14 normalized ¹²⁹I/I ratio and 9% transmission through the accelerator. However, high ²⁷Al¹⁶O⁺ molecular rates were observed from the user samples, and in order to destroy these molecules we had to increase the stripper pressure to ～0.22 μg/cm². This increase in the stripper pressure degraded the machine blank values to ～9 × 10^?14 and reduced transmission to 8%. Nevertheless, the achieved measurement conditions are sufficient for measurement of nearly all ¹²⁹I samples that have been submitted to PSI/ETH over the last few years.     

Low temperature formation of luminescent Si nanocrystals with combined process of excimer UV-light irradiation and RTA

Si ion implantation was widely used to synthesize specimens of SiO₂ containing supersaturated Si and subsequent high temperature annealing induces the formation of embedded luminescent Si nanocrystals. In this work, the potentialities of excimer UV-light (172 nm, 7.2 eV) irradiation and rapid thermal annealing (RTA) to achieve low temperature (below 1000 °C) formation of luminescent Si nanocrystals in SiO₂ have been investigated. The Si ions were introduced at acceleration energy of 180 keV to fluences of 7.5 × 10¹⁶ and 1.5 × 10¹⁷ ions/cm². The implanted samples were subsequently irradiated with an excimer-UV lamp for 2 h. After the process, the samples were rapidly thermal annealed at 1050 °C for 5 min before furnace annealing (FA) at 900 °C. Photoluminescence spectra were measured at various stages at the process. Effective visible photoluminescence is found to be observed even after FA at 900 °C, only for specimens treated with excimer-UV lamp and RTA, prior to a low temperature FA process. Based on our experimental results, we discuss the mechanism for the initial formation process of the luminescent Si nanocrystals in SiO₂, together with the effects with excimer lamp irradiation and RTA process on the luminescence.     

Investigation of hydrogen concentration and hardness of ion irradiated organically modified silicate thin films

A study of the effects of ion irradiation of organically modified silicate thin films on the loss of hydrogen and increase in hardness is presented. NaOH catalyzed SiNa_wO_xC_yH_z thin films were synthesized by sol–gel processing from tetraethylorthosilicate (TEOS) and methyltriethoxysilane (MTES) precursors and spin-coated onto Si substrates. After drying at 300 °C, the films were irradiated with 125 keV H⁺ or 250 keV N²⁺ at fluences ranging from 1 × 10¹⁴ to 2.5 × 10¹⁶ ions/cm². Elastic Recoil Detection (ERD) was used to investigate resulting hydrogen concentration as a function of ion fluence and irradiating species. Nanoindentation was used to measure the hardness of the irradiated films. FT-IR spectroscopy was also used to examine resulting changes in chemical bonding. The resulting hydrogen loss and increase in hardness are compared to similarly processed acid catalyzed silicate thin films.     

Damage accumulation in gallium nitride irradiated with various energetic heavy ions

In this work a study of damage production in gallium nitride via elastic collision process (nuclear energy deposition) and inelastic collision process (electronic energy deposition) using various heavy ions is presented. Ordinary low-energy heavy ions (Fe⁺ and Mo⁺ ions of 110 keV), swift heavy ions (²⁰⁸Pb²⁷⁺ ions of 1.1 MeV/u) and slow highly-charged heavy ions (Xeⁿ⁺ ions of 180 keV) were employed in the irradiation. Damage accumulation in the GaN crystal films as a function of ion fluence and temperature was studied with RBS-channeling technique, Raman scattering technique, scanning electron microscopy (SEM) and transmission electron microscopy (TEM).For ordinary low-energy heavy ion irradiation, the temperature dependence of damage production is moderate up to about 413 K resulting in amorphization of the damaged layer. Enhanced dynamic annealing of defects dominates at higher temperatures. Correlation of amorphization with material decomposition and nitrogen bubble formation was found. In the irradiation of swift heavy ions, rapid damage accumulation and efficient erosion of the irradiated layer occur at a rather low value of electronic energy deposition (about 1.3 keV/nm³), which also varies with irradiation temperature. In the irradiation of slow highly-charged heavy ions (SHCI), enhanced amorphization and surface erosion due to potential energy deposition of SHCI was found. It is indicated that damage production in GaN is remarkably more sensitive to electronic energy loss via excitation and ionization than to nuclear energy loss via elastic collisions.     

Micro-Raman studies of swift heavy ion irradiation induced structural and conformational changes in polyaniline nanofibers

Polyaniline (PAni) nanofibers doped with camphor sulfonic acid have been irradiated with 90 MeV O⁷⁺ ions at different fluences (3 × 10¹⁰?1 × 10¹² ions/cm²) using a 15UD Pelletron accelerator under ultra-high vacuum. XRD studies reveal a decrease in the domain length and an increase in the strain upon SHI irradiation. The increase in d-spacing corresponding to the (1 0 0) reflection of PAni nanofibers with increasing irradiation fluence has been attributed to the increase in the tilt angle of the chains with respect to the (a, b) basal plane of PAni. Decrease in the integral intensity upon SHI irradiation indicates amorphization of the material. Micro-Raman (μR) studies confirm amorphization of the PAni nanofibers and also show that the PAni nanofibers get de-doped upon SHI irradiation. μR spectroscopy also reveals a benzenoid to quinoid transition in the PAni chain upon SHI irradiation. TEM results show that the size of PAni nanofibers decreases with the increase in irradiation fluence, which has been attributed to the fragmentation of PAni nanofibers in the core of amorphized tracks caused by SHI irradiation.     

A simple way to analyze infrared reflectivity spectra of p-type Hg0.78Cd0.22Te implanted in various conditions

Different ion-implanted p-type Hg_0.78Cd_0.22Te samples were analyzed by infrared reflectivity in the 2–20 μm wavelength range. We show how to derive some characteristic values of the free carriers induced by ion implantation from simple models of the implanted samples. For low energy implantations (Al (320 keV)) an excess of electrons with concentration n⁺ ≈ 5 × 10¹⁷ cm⁻³ for doses 10¹² and 10¹⁴ ions cm⁻² is observed between the surface and the projected range R_p of the ions, in agreement with the well-known change of type of the free carriers induced by the ion implantation in this kind of samples. High energy α particle (0.8 and 2 MeV, 10¹⁴ ions cm⁻²) implantations lead to a pronounced inhomogeneous concentration of free electrons with n⁺ ≈ 9.2 × 10¹⁶ cm⁻³ between the surface and R_p where a negligible amount of defects due to the nuclear energy loss is formed, and n⁺ ≈ 1.6 × 10¹⁷ cm⁻³ between R_p and R_p + ΔR_p, ΔR_p being the longitudinal straggling, where the defect production rate through the nuclear energy loss mechanism is maximum.     

A broad chemical and structural characterization of the damaged region of carbon implanted alumina

As candidate materials for future thermonuclear fusion reactors, isolating ceramics will be submitted to high energy gamma and neutron radiation fluxes together with an intense particle flux. Amorphization cannot be tolerated in ceramics for fusion applications, due to the associated volume change and the deterioration of mechanical properties. Therefore, a comprehensive study was carried out to examine the effects of carbon beam irradiation on polycrystalline aluminium oxide (Al₂O₃), a ceramic component of some diagnostic and plasma heating systems. Complementary techniques have allowed a complete chemical and structural surface analysis of the implanted alumina. Implantation with 75 keV, mono-energetic carbon ions at doses of 1 × 10¹⁷ and 5 × 10¹⁷ ions/cm² was performed on polished and thermally treated ceramic discs. The alumina targets were kept below 120 °C. The structural modifications induced during ion irradiation were studied by the GXRD and TEM techniques. Under these conditions, alumina is readily amorphized by carbon ions, the thickness of the ion-beam induced disordered area increasing with the ion dose. Matrix elements and ion implanted profiles were followed as a function of depth by using ToF-SIMS, indicating the maximum concentration of implanted ions to be in the deeper half of the amorphous region. Ion distribution and chemical modifications caused in the Al₂O₃ substrate by carbon irradiation were corroborated with XPS. The amount of oxygen in the vicinity of the implanted alumina surface was reduced, suggesting that this element was selectively sputtered during carbon irradiation. The intensity of those peaks referring to Al–O bonds diminishes, while contributions of reduced aluminium and metal carbides are found at the maximum of the carbon distribution. TEM observations on low temperature thermally annealed specimens indicate partial recovery of the initial crystalline structure.     

Photoluminescence induced from hot Ge implantation into SiO2

Up to the present, by using the ion implantation technique, photoluminescence (PL) from Ge nanocrystals (Ge NCs) was obtained by room temperature (RT) Ge implantation into a SiO₂ matrix followed by a high temperature anneal. In this way two PL bands were observed, one at 310 nm and the second, with much higher yield at 390 nm. In the present work we have used another experimental approach. We have performed the Si implantation at high temperature (T_i) and then, we have done a higher temperature anneal (T_a) in order to nucleate the Ge NCs. With this aim we have changed T_i between RT and 600 °C. By performing the implantation at T_i = 350 °C we found a PL yield four times higher than the one obtained from the usual RT implantation at the same fluence. Moreover, by changing the implantation fluence between Φ = 0.25 × 10¹⁶ and 2.2 × 10¹⁶ Ge/cm² we observed that Φ = 0.5 × 10¹⁶ Ge/cm² induces a PL yield three times higher as compared to the usual RT implantation fluence. In conclusion, using a hot Ge implantation plus an optimal Ge atomic concentration, we were able to gain more than one order of magnitude in the 390 nm PL yield as compared with previous ion implantation results.     

MeV Si ions bombardment effects on the thermoelectric properties of Co0.1SbxGey thin films

We have grown three different monolayer Co_0.1Sb_xGe_y (x = 2, 4, 11 and y = 15, 7, 15) thin films on silica substrates with varying thickness between 100 and 200 nm using electron beam deposition. The high-energy (in the order of 5 MeV) Si ion bombardments have been performed on samples with varying fluencies of 1 × 10¹², 1 × 10¹³, 1 × 10¹⁴ and 1 × 10¹⁵ ions/cm². The thermopower, electrical and thermal conductivity measurements were carried out before and after the bombardment on samples to calculate the figure of merit, ZT. The Si ions bombardment caused changes on the thermoelectric properties of films. The fluence and temperature dependence of cross plane thermoelectric parameters were also reported. Rutherford backscattering spectrometry (RBS) was used to analyze the elemental composition of the deposited materials and to determine the layer thickness of each film.     

Influence of temperature and plasma composition on deuterium retention in refractory metals

Refractory materials are being considered potential candidates to build the first wall of the fusion reactor chamber. This work reports on the results of the study of tungsten and molybdenum metals exposed to high flux densities (～10²⁴ D/m² s) and low temperature (T_e ～ 3 eV) deuterium plasmas in Pilot-PSI irradiation facility.The hydrogenic retention in poly-crystalline W and Mo targets was studied with ³He nuclear reaction analyses (NRA). The NRA results clearly show a two-dimensional radial distribution of the deuterium with a minimum at the center and a maximum close to the edge. These distribution correlates well with the thermal profile of the sample surface, where a maximum of ～1600 K was measured at the center decreasing to ～1000 K in the edges. A maximum deuterium fluence retention of 5 × 10¹⁵ D/cm² was measured. The values of the retained fractions ranging from 10^?5 to 10^?6 D_retained/D_incident were measured with thermal desorption spectroscopy (TDS) and compares well with IBA results. Moreover, the presence of C in the plasma and its co-deposition increases the D retention in the region where a C film is formed. Both NRA and TDS results show no clear dependence of retention on incident fluence suggesting the absence of plasma related traps in W under these conditions.     

Formation of germanium nanoparticles in silica glass studied by optical absorption and X-ray absorption fine structure analysis

We examined the relation between the 3.1 eV emission band and local structure for Ge⁺ implanted silica glass by means of photoluminescence, optical and X-ray absorption spectroscopies. In the 2 × 10¹⁵ cm^?2 implanted sample, a new emission band around 2.7 eV was observed, the origin of which was assigned to the B_2α oxygen deficient center and/or small Si clusters in silica. When the Ge⁺ fluence exceeded 2 × 10¹⁶ cm^?2, a sharp and intense 3.1 eV emission band replaced the 2.7 eV band. We found that the intense 3.1 eV PL occurred by the prolonged X-ray irradiation onto the 2 × 10¹⁵ cm^?2 implanted sample. UV–vis absorption and XAFS spectroscopies suggested that the aggregation of atomically dispersed tetravalent (Ge(IV)) atoms into Ge(0) clusters of ～1 nm exhibit strongly correlation with the generation of the 3.1 eV PL. Such nano- and/or subnano-size Ge(0) clusters formed by the X-ray radiation were oxidized and decomposed again to the isolated Ge(IV) atoms, while those produced by the higher Ge⁺ fluence were stable against the exposure to air.     

Experimental investigation on cryogenic hydrogen adsorption of molecular sieves

Tritium extraction system (TES) is one of the most important components in the helium cooled solid breeder test blanket modules (TBMs) of ITER. TES will extract various isotopic species of hydrogen by the liquid nitrogen cooled molecular sieve adsorber beds (MSB). The cryogenic hydrogen adsorption properties of several kinds of molecular sieves have been investigated at the pressure of hydrogen of 100 Pa, 200 Pa, and 0.2 MPa in order to offer the suitable molecular sieve for the MSB in TES. The saturated hydrogen adsorption capacities of the MS5A-2 and MS13X-2 have been measured at 100 Pa hydrogen pressure. To demonstrate the hydrogen extraction from continuous He–H₂ purge gases, the MS5A-2 has been tested in circulating 99.79% He–0.21% H₂ mixture with a flow rate of 16.8 L/min. The results show that the globular MS5A-2 with a diameter of 3–5 mm can adsorb/desorb hydrogen quickly. The saturated hydrogen adsorption capacity of MS5A-2 is 7.55 ml g^?1 (NTP) and MS5A-2 could effectively extract trace hydrogen from mixture gases. As a result, this type of molecular sieve can be the candidate of the one in the MSB in ITER TBM.     

Fabrication of channel waveguides in Er3+-doped tellurite glass via N+ ion implantation

Er³⁺-doped tellurite glasses are of great interest for the fabrication of active integrated optical circuits because of their unique properties in terms of bandwidth and rare-earth solubility. Multimode channel waveguides in a glass of this family, namely, a sodium–tungsten–tellurite glass, have been realized with high-energy ion irradiation, where the ion beam size in one dimension was reduced to a few tens of micrometers by a silicon mask. This approach makes possible the fast fabrication of waveguides with high aspect ratio (～10³). The 24 μm wide and 10 mm long waveguide stripes achieved by 1.5 MeV N⁺ irradiation with fluences between 5 × 10¹⁵ and 4.0 × 10¹⁶ ions/cm² were studied using interference phase contrast microscopy and surface profilometry. The waveguiding effect was investigated by the end-fire coupling technique. Multimode light propagation has indeed been observed in these channels, confirming the effectiveness of this method. Dark-line spectroscopy revealed that light propagated in the channel via the optical barrier formed by the N⁺ implantation.