Electron beam annealing of Fe+ implanted Si nanostructures

Silicon nanostructures (nanowhiskers) have been formed at surface densities approximately 10(9) cm-2 by electron beam annealing (EBA) prior to the implantation of 7 keV Fe+ ions to fluences from 1 x 10(13) - 4 x 10(15) Fe+ cm(-2). A second EBA step is then applied to relieve implantation-induced stresses. RBS analysis shows that the implanted Fe remains close to the surface. AFM characterisations of the implanted nanowhiskers before and after the final EBA step are summarised in graphs of height versus surface density. In a striking result it is shown that the nanowhiskers not only survive processing but also grow significantly. For example, at the highest fluence of 4 x 10(15) Fe+ cm(-2), the average height more than doubles: the increases are from 5.0 nm to 6.5 nm under implantation and from 6.5 nm to 11.8 nm under EBA. In addition there is a significant increase in surface density from an initial value of 1.6 x 10(9) cm(-2) to 4.3 x 10(9) cm(-2). These results highlight the feasibility of doping Si surface nanostructures with magnetic ions to fabricate Si devices for spin-dependent enhanced field emission.     

Electrical characterization of Si+ and Si+/P+ implanted N+P+In0.53Ga0.47As junctions

In this communication, we present I–V and admittance spectroscopy measurements of shallow n⁺p junctions into p-InGaAs made by Si⁺ implantation, including a complete study of the conduction mechanisms as a function of temperature. The effect of P⁺ co-implantation is also analysed. The I–V characteristics of both junctions show that recombination in the space-charge zone is the dominant transport mechanism in forward bias, with ideality factors around 1.5 at 300 K that increase with decreasing temperature of measurement. Activation energies of the reverse saturation current are obtained at room temperature, being 0.5 eV and 0.4 eV for Si⁺ and Si⁺P⁺ implanted diodes, respectively, indicating that recombination currents occur through a near midgap center. Reverse current–voltage measurements show a higher conduction in the P⁺ co-implanted junction due to a higher concentration of traps. In both types of junctions, the reverse characteristics can be fitted to a thermally-activated trap-assisted tunneling mechanism at low bias, involving traps at 0.41 eV and 0.44 eV for Si⁺ and P⁺ co-implanted junctions, respectively, whereas different trap-assisted tunneling processes dominate at medium and high bias. The small signal analysis show a clear difference between the two types of junctions. The use of Kramers–Kronig transforms on the admittance spectroscopy data reveals the presence of a defect level at 0.35 eV in both types of junctions, probably assigned to Zn, the native acceptor present in the p-InGaAs. Another trap level at 0.30 eV is detected at the P⁺ co-implanted junctions, not appearing in the Si doped junctions, which could probably be due to damage produced by the co-implantation.     

Photoluminescence and Optical Transition Dynamics of Er3+ Ions in Porous Si

1.IntroductionThereisagrowinginterestinrare-earthsd0pedSionaccount0fitspotentialapplicati0nsinSi-basedoptoelectronicdevicesandsystems.InparticularEr-dopedSihasattractedmuchattentionbecauseEri0ninitstriva1entstate(Er'+)showssharpphotolumi-nescence(PL)around1.54pm,oneofthestandardwavelengthsinsilicafiber-basedopticalc0mmunica-tiontechnology-Alth0ughal0tofpapersonthed0p-.ingandPLofEr3+havebeenpublished{1],thereisalack0fsufficientunderstanding0ftheluminescencemechanismatpresent.Inthecase0fEr-…     

Photoluminescence enhancement in porous silicon layers

Porous silicon samples were prepared on diamond scratched n-type and p-type silicon substrates with various resistivities. Photoluminescence studies performed on these porous silicon layers indicated an enhancement of photoluminescence intensity as well as red-shifting for diamond scratched samples compared to unscratched samples. © 1998 Kluwer Academic Publishers     

Bacterial adhesion reduction on a biocompatible Si+ ion implanted austenitic stainless steel

The colonization of an implant surface by bacteria is an extremely important medical problem, which often leads to the failure of medical devices. Modern surface modification techniques, such as ion implantation, can confer to the surfaces very different properties from those of the bulk underlying material. In this work, austenitic stainless steel 316 LVM has been superficially modified by Si⁺ ion implantation. The effect of surface modification on the biocompatibility and bacterial adhesion to 316 LVM stainless steel has been investigated. To this aim, human mesenchymal stem cells (hMSCs), as precursor of osteoblastic cells, and bacterial strains relevant in infections related to orthopedic implants, i.e., Staphylococcus aureus and Staphylococcus epidermidis, have been assayed. For the understanding of changes in the biological response associated to ion implantation, variations in the chemical surface composition, topography, surface Gibbs energy, isoelectric point and in vitro corrosion behavior have been evaluated. hMSCs adhesion, viability and differentiation to the osteoblastic lineage were unaffected by Si⁺ ion implantation. On the other hand, Si⁺ ion implantation diminished the number of attached bacteria in static conditions and led to smaller adhesion rates and retention strength. The ability of implanted surfaces to reduce the bacterial adhesion was higher for Staphylococcus epidermidis than for Staphylococcus aureus. This study proposes Si⁺ ion implantation as an effective way of reducing bacterial adhesion on 316 LVM stainless steel surfaces without compromising its good biocompatibility.     

Photoluminescence properties of Eu2+-activated Ca2Y2Si2O9 phosphor

Eu²⁺-activated Ca₂Y₂Si₂O₉ phosphors with different Eu²⁺ concentrations have been prepared by a solid-state reaction method at high temperature and their photoluminescence (PL) properties were investigated. Photoluminescence results show that Eu²⁺-doped Ca₂Y₂Si₂O₉ can be efficiently excited by UV–visible light from 300 to 425 nm. Ca₂Y₂Si₂O₉: Eu²⁺ exhibits broad band emission in the wavelength range of 425–700 nm, due to the 4f⁶5d¹ → 4f⁷5d⁰ transition of the Eu²⁺ ions located at two different sites ((Ca/Y)1 and (Ca/Y)2) in Ca₂Y₂Si₂O₉. The effect of the Eu²⁺ concentration in Ca₂Y₂Si₂O₉ on the PL properties was investigated in detail. The results showed that the relative PL intensity reaches a maximum at 1 mol% of Eu²⁺, and a red-shift of the emission bands from these two different sites was observed with increasing Eu²⁺ concentration. Also there exists energy transfer between these two Eu²⁺ sites. The potential applications of Ca₂Y₂Si₂O₉: Eu²⁺ have been pointed out.     

Sr2Si5N8:Eu2+荧光粉的制备及其发光性能研究

以Sr₂CO₃、Si₃N₄和Eu₂O₃为原料, 以C为主要还原剂, 采用碳热还原氮化工艺合成Sr₂Si₅N₈:Eu²⁺荧光粉, 着重研究了C、Sr₂CO₃添加量及Eu²⁺浓度对产物物相及发光性能的影响。研究结果表明: 当C与Si₃N₄的摩尔比 n_c/=9/5时,合成出Sr₂Si₅N₈:Eu²⁺单相荧光粉, 添加适当过量的Sr₂CO₃可提高合成产物的N含量, 且荧光粉的发光强度与其N含量呈现正相关关系。在450 nm蓝光激发下, 受Eu²⁺的4f⁶5d¹ → 4f⁷跃迁作用, Sr₂Si₅N₈:Eu²⁺荧光粉在550~700 nm波段范围产生非对称宽带发射。随着Eu²⁺掺杂浓度由1.5mol%增加到20mol%, 荧光粉的发光强度先增强后减弱, 达到2mol%时发生浓度淬灭现象; 发射主峰由608 nm逐步红移至641 nm; CIE色坐标从(0.606, 0.393)位移至(0.656, 0.343), 是一种可用于白光LED的优质红色荧光粉。     

Photoluminescence quenching and photocatalytic enhancement of Pr-doped ZnO nanocrystals

This work reports the synthesis of novel praseodymium (Pr)-doped ZnO nanocrystals with excellent photocatalytic activity through modified solid-state reaction route. The impacts of doping on the wurtzite hexagonal structure are analysed with X-ray diffraction (XRD) and Raman spectroscopy. The production of defect levels and the formation of Urbach energy within the system are confirmed using photoluminescence (PL) techniques and UV/Vis diffuse reflectance spectroscopy, respectively. The linear relationship between Urbach energy and band gap energy is elucidated from UV/Vis spectroscopy analysis. The changes happened to morphology by doping were tackled using scanning electron microscopy (SEM). The concentration quenching effect of PL emission with Pr doping is explained in detail. A three-fold enhancement in the photocatalytic activity was achieved with optimum Pr incorporation in ZnO. This work successfully correlated PL quenching and enhanced photocatalytic activity with the defect production happened in ZnO system on Pr doping. The practical applicability of the photocatalyst was confirmed with a stability test.     

Dopant incorporation in thin strained Si layers implanted with Sb

The effect of tensile strain on Sb incorporation in Si and its activation during post-implantation annealing has been studied by a combination of Rutherford backscattering/channeling spectrometry, secondary ion mass spectrometry, X-ray diffraction and 4-point probe measurements. Our results show that, for Sb implanted samples a tensile strain has an important role for dopant behavior. Particularly, increasing the tensile strain in the Si layer from 0 to 0.8% leads to an enhancement of the fraction of incorporated Sb atoms in substitutional sites already during implantation from ~ 7 to 30%. Furthermore, 0.8% strain in antimony doped Si gives ~ 20% reduction in the sheet resistance in comparison to the unstrained sample.     

Low temperature intermediate band metallic behavior in Ti implanted Si

Si samples implanted with very high Ti doses and subjected to Pulsed-Laser Melting (PLM) have been electrically analyzed in the scope of a two-layer model previously reported based on the Intermediate Band (IB) theory. Conductivity and Hall effect measurements using the van der Pauw technique suggest that the insulator-metal transition takes place for implantation doses in the 10¹⁴-10¹⁶ cm^− 2 range. Results of the sample implanted with the 10¹⁶ cm^− 2 dose show a metallic behavior at low temperature that is explained by the formation of a p-type IB out of the Ti deep levels. This suggests that the IB would be semi-filled, which is essential for IB photovoltaic devices.     

CeF3掺杂增强纳米晶Si光致发光强度的研究

真空蒸发SiO粉末,在Si(100)基体上制备SiOx薄膜,后续氮气中1100 ℃退火制备镶嵌在SiO2基体中的纳米晶Si体系(nc-Si/SiO2),然后将该样品放入真空室,在其上沉积CeF3薄膜,不同温度下热处理使Ce3 扩散到nc-Si附近,实现对纳米晶Si的掺杂.通过改变CeF3薄膜厚度调节掺杂浓度,在一定的掺杂浓度下纳米晶Si的光致发光强度明显改善,激发光谱证实荧光增强机制是Ce3 通过强耦合过程对纳米晶Si的能量传递.     

Photoluminescence plasmonic enhancement in InAs quantum dots coupled to gold nanoparticles

Photoluminescence enhancement due to dipole field from gold nanoparticles was observed at 77 K for GaAs capped InAs quantum dots. The gold nanoparticles were coupled to the surface of the cap layer by using dithiol ligands. The enhancement was investigated as a function of the GaAs capped layer thickness. An order of magnitude enhancement in the emission was observed in samples with a cap thickness of 12 nm. This enhancement however is drastically decreased in samples with a cap thickness of 200 nm. The observed enhancement is interpreted in terms of photon scattering from the large dipole scattering cross section.     

激光辐照对CdSe/PMMA纳米复合材料光致发光的影响

本文用共混法制备CdSe/PMMA纳米复合材料,用荧光光谱(PL)研究了该复合材料的发光性质.通过延长激光照射时间并进行原位PL跟踪测试,我们发现了该复合材料中有机物基体发光不断减弱而CdSe纳米粒子发光不断增强且稍许红移的现象.我们对于这一现象的起因做出了初步的解释.     

Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted p +-n photodiode structure formation

The impurity-defect structure of heteroepitaxial Cd _x Hg_{1 ? x} Te/Si (0.35 < x < 0.39) layers grown by molecular beam epitaxy for the creation of arsenic-ion-implanted p ⁺-n junctions has been studied by the photoluminescence method. It is established that full realization of the possibilities of p ⁺-on-n photodiode structures based on the CdHgTe/Si system is hindered by uncontrolled doping of the material that leads to the formation of both shallow (impurity level energy ～10 meV) and deep (～50 meV) acceptor levels.     

Eu2+/Tb3+掺杂的Sr2Si5N8基荧光粉的制备与发光性能

采用碳热还原氮化法合成了Eu²⁺/Tb³⁺掺杂的Sr₂Si₅N₈基荧光粉, 并重点研究了Tb³⁺-Eu²⁺共掺时Sr₂Si₅N₈基荧光粉的发光性能。研究结果表明: 由于Tb³⁺的f → d间的跃迁是自旋允许的, Sr₂Si₅N₈:Tb³⁺在330 nm激发光下, 在490、543、585和623 nm四处各有一发射峰, 它们分别来源于Tb³⁺的⁵D₄ → ⁷F_j (j = 6、5、4、3)能级跃迁; 掺入Tb³⁺对Sr_1.96Si₅N₈:0.04Eu²⁺的激发谱和发射谱的形状及峰位无明显影响, 当共掺离子Tb³⁺浓度为x = 0.01时, 样品发射强度比未共掺的Sr_1.96Si₅N₈:0.04Eu²⁺提高了约20%, Tb³⁺主要通过电多极能量传递的方式转向Eu²⁺。     

Preparation and luminescence properties of spin-coated PMMA films containing Si nanocrystallites

We report on the synthesis of Si nanocrystallites by pulsed laser ablation in toluene followed by the preparation of composite films with PMMA and their luminescence studies. Transmission electron microscopy images show that the sizes of silicon nanocrystallites vary from about 4 nm down to below 1 nm. The composite films exhibit strong emissions with their spectral peaks continuously moving from 387 to 506 nm when the excitation wavelength varies from 300 to 440 nm, in accordance with the quantum confinement effect. Their time-resolved photoluminescence spectra reveal a multi-exponential decay, implying that the light emission may be also related to some surface states.     

Characterisation of ultra-shallow disorder profiles and dielectric functions in ion implanted Si

Ultra-shallow (below 20 nm) disorder profiles have been characterized by spectroscopic ellipsometry (SE). The implanted depth region has been divided into sublayers with dielectric functions calculated by the effective medium approximation using single-crystalline and disordered components. The damage depth profile has been parameterized using a box model, an independent multilayer model, a graded multilayer model, an error function, and Gaussian profiles. Literature values and Tauc-Lorentz (TL) parametrization as well as multi-sample and single-sample approaches have been compared to describe the dielectric function of the disordered component. The distribution of the implanted ions and/or damage have been cross-checked using medium energy ion scattering (MEIS), transmission electron microscopy and Monte Carlo simulations. We found a good agreement in the damage profiles obtained by the different methods. There is an offset between the SE and MEIS damage profiles due to the fact that SE is very sensitive to the surface roughness, in contrast to MEIS. The correlation between this offset and the surface roughness has been investigated using atomic force microscopy.     

溅射Si/Ge多层膜及其发光誊性研究

采用离子束溅射技术,在玻璃衬底上制备了不同周期数的Si/Ge多层膜样品.利用X射线小角衍射、Raman散射光谱和室温光致发光(PL)对样品进行表征.结果表明,2.0～2.3eV之间的发光带是由薄膜中的各种缺陷形成的;1.77～1.84eV之间的发光带来自薄膜中的非晶结构和晶粒间的缺陷;1.53eV发光峰则可能源于纳米Ge晶粒发光.