一种新型偏振分束器的研制

偏振分束器能将非偏振光分成两束正交的线偏振光.文章详细的叙述了具有高消光比、高透射率的偏振分束器的结构设计、制作工艺及实验结果,并对实验结果进行了仔细分析,说明了研制过程中影响偏振分束器消光比、透射率的因素,最后介绍了偏振分束器的应用前景.研制的偏振束器能使入射光的振动方向相互垂直的O光E光均垂直于其输出端面输出,分束角约为102°,光强分束比近似为1,透射率为95%,消光比接近50 dB.     

超短双芯光子晶体光纤偏光分束器

提出了一种基于椭圆双芯光子晶体光纤的偏振分束器,并利用全矢量有限元法分析了偏振分束器长度与结构参数的关系,由此得出了偏振分束器长度随孔间距、占空比和桥路变化的一般规律。研究表明,当椭圆双芯光子晶体光纤偏振分束器结构参数一定时,孔间距越小,桥路宽度越宽,则分束器长度越短;占空比变化对长度影响不明显,但对消光比的影响较明显。进而,通过结构参数的优化,设计出一种超短的椭圆双芯光子晶体光纤偏振分束器,在工作波长1 550 nm处,该分束器的长度仅为0.775 mm,消光比高达50 dB,消光比大于20 dB的带宽覆盖了从1 535~1 565 nm之间30 nm的波长范围,即通信C波段范围。     

短长度的双椭圆纤芯光子晶体光纤偏振分束器

基于双折射效应设计了一种新型的双椭圆纤芯光子晶体光纤(PCF)偏振分束器,通过在每个纤芯处引入一对大空气孔和一对小空气孔来构成椭圆纤芯。采用全矢量有限元法(FEM)和半矢量光束传播法数值模拟偏振分束器的性能,结果表明,在工作波长1.55μm处,光纤长度为544μm时,X、Y方向偏振光可实现分离,且消光比达到-43.75dB,消光比小于-10dB的带宽为80nm。这为设计具有高消光比和极短长度的双芯光子晶体光纤偏振分束器提供了一种新的结构。     

倒梯形双层金属光栅式偏振分束器

为获得高衍射效率、高消光比、宽带宽及大角度容差的光栅结构，提出了一种在近红外波长区域工作的倒梯形双层金属光栅结构的偏振分束器。该结构引入了一层高折射率介质层，并且将光栅区的光刻胶斜切成倒梯形结构，新的设计增大了光栅的透射效率和消光比。使用严格耦合波分析方法，模拟和优化了偏振分束器的结构参数。结果表明，横磁波及横电波在1 290~1 840 nm波长范围内的透射效率和反射效率分别超过97%和95%。透射和反射的最大消光比分别为33 dB和53 dB。在波长为1 550 nm，入射角为-40~40时，光栅的透射和反射消光比都大于22 dB，达到了高性能偏振分束器的要求。相较于双层金属矩形光栅，所提出的倒梯形双层金属结构表现出更高的透射性与反射性，同时具有更好的设计灵活性。     

亚波长线栅太赫兹偏振分束器的研究

为了提高工作在太赫兹波段偏振分束器的性能,采用激光诱导与化学镀铜的方法在聚酰亚胺衬底上制作了亚波长周期金属线栅太赫兹偏振分束器,并以返波振荡器作为太赫兹辐射源搭建了偏振分束特性测试系统。当入射波频率为340GHz、入射角为45°时,测得在入射波偏振在0°～180°变化过程中,该偏振分束器具有良好的偏振分束特性,透射和反射的消光比分别为27.3dB和10.5dB,插入损耗分别为0.13dB和0.32dB;用太赫兹时域光谱系统测得偏振分束器在0.2THz～1.5THz频域内透射消光比大于18dB。结果表明,测试结果与时域有限元方法模拟结果基本吻合。     

金属修饰的微结构光纤偏振分束器

提出了一种金属修饰的微结构光纤偏振分束器,并且利用全矢量有限元法仿真分析了该偏振分束器的长度与其结构参数的关系,进而得出了该偏振分束器长度随孔间距、占空比变化的一般规律。研究结果表明:当其他结构参数一定时,该偏振分束器长度会随着孔间距的减小而减短;占空比减小,偏振分束器长度也会随之减短。最终综合考虑其性能与金属材料带来的损耗的影响,设计出一种结构简单的微结构光纤偏振分束器。该偏振分束器长度为3.523 mm,在其工作波长1。55 m处消光比高达74.9 dB,消光比高于20 dB的波长范围为1.53~1.57 m之间的40 nm范围,覆盖了整个光通信的C波段范围。并且该偏振分束器有着较好的冗余特性,在偏振分束器长度存在5%的误差时,仍能保持较好的性能。     

基于二氧化硅薄膜夹层式亚波长金属光栅的宽波段太赫兹偏振分束器

设计出一种结构新颖的宽波段太赫兹偏振分束器,这种偏振分束器由夹层式亚波长金属光栅制成。亚波长金属光栅偏振分束器可以将入射的任意自然光分成两束偏振状态垂直的线偏振光。其中,TE模反射而TM模透射。设计的偏振分束器在3.5~5.5 THz波段可以达到很高的衍射效率与消光比。但是,在光栅的实际制作过程中,加工技术的缺陷引起的误差大大影响了光栅的性能,比如衍射效率,消光比等。因此文中对一些结构参数进行了计算,从计算结果可以看出这种偏振分束器也有很好的工艺容差。当覆盖层厚度D1与底层介质厚度D3的变化范围分别为1~1.2 m和2.8~3 m时,T0TM大于96.9%,R0TE大于98.7%。Tc和Rc分别大于31 dB和33.4 dB。结果显示,设计的偏振分束器在2 THz的带宽10的大角度范围内,衍射效率高于90%,消光比大于20 dB。因此文中设计对于太赫兹调制器件的研究,以及太赫兹通信系统的集成都有很大的参考价值。     

高双折射双芯光子晶体光纤偏振分束器

设计了一种基于双折射效应的新型矩形纤芯光子晶体光纤偏振分束器,通过在矩形晶格结构的光子晶体光纤的每个纤芯中引入一对椭圆来增加结构的双折射。应用全矢量有限元法（FEM）分析了双芯光子晶体光纤中结构参数对双折射和耦合长度特性的影响,数值模拟了该偏振分束器的性能。结果表明:增大椭圆率可以在增大结构的双折射的同时减小耦合长度,并且该分束器在工作波长为1.55 m、传输长度为282 m 的光纤中能够实现偏振状态的隔离,消光比达到最小值-45.42 dB,并且在1.507~1.596 m、带宽为89 nm 的范围内消光比小于-10 dB。     

集成光学光纤陀螺芯片

本文首次报道了国内研制的集成光学光纤陀螺芯片,详细描述了其设计考虑与制作。单 Y 型多功能钛扩散铌酸锂芯片包含消光比大于35dB 的薄膜波导偏振器、分束比为49.5/50.5的3dB 分束器/合束器、半波电压小于5伏的相位调制器,光纤—器件—光纤插入损耗为5.4dB。     

硅基片上偏振分束器研究进展

硅基集成光波导具有很高的折射率对比度,能将光场限制在纳米尺度,是制备结构紧凑、高效的纳米光子器件的关键。但是,高折射率对比度也会引起波导双折射效应。因此,几乎所有纳米光子器件都是偏振相关的。偏振分束器是偏振分集光子集成电路中克服硅纳米器件强偏振依赖性的重要组成部分,在片上相干通信、传感与环境检测等领域具有广阔的应用前景。目前报道的基于亚波长光栅波导结构的偏振分束器,工作带宽在200 nm以上,消光比也超过了20 dB。文章简述了各种类型偏振分束器的工作原理,对其尺寸、消光比、带宽等方面的性能进行了比较,分析了各类偏振分束器的优劣势,最后总结了其主要应用场景并展望了未来发展方向。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.