共查询到20条相似文献,搜索用时 515 毫秒
1.
本文研究了柔性基板上的薄膜晶体管,使用IGZO作为有源层,栅极绝缘层采用NH3等离子体和N2O等离子体分别进行处理,研究器件性能变化。结果表明等离子体类型及处理时间对阈值电压、场效应迁移率、开关比、亚阈值摆幅(SS)和偏压稳定性都有影响。TFT器件用NH3等离子体处理10秒显示出最佳的器件性能,阈值电压达到0.34 V,场效应迁移率为15.97 cm2/Vs,开关比为6.33×107,亚阈值摆幅为0.36 V /dec。本文提出的柔性IGZO-TFT是下一代柔性显示驱动装置较好选择。 相似文献
2.
In this letter, fully Ni self-aligned silicided (fully Ni-salicided) source/drain (S/D) and gate polycrystalline silicon thin-film transistors (FSA-TFTs) have been successfully fabricated on a 40-nm-thick channel layer. Experimental results show that the FSA-TFTs give increased ON/OFF current ratio, improved subthreshold characteristics, less threshold voltage rolloff, and larger field-effect mobility compared with conventional TFTs. The FSA-TFTs exhibit small S/D and gate parasitic resistance and effectively suppress the floating-body effect and parasitic bipolar junction transistor action. The characteristics of the FSA-TFTs are suitable for high-performance driving TFTs with good output characteristics and large breakdown voltage. 相似文献
3.
HgTe nanocrystal-based thin-film transistors (TFTs) with Al2 O3 top-gate dielectrics were fabricated on glass substrates using sintered HgTe nanocrystals as the channel layers. To the best of our knowledge, this is the first report on the fabrication of nanocrystal-based TFTs on glass substrates. Colloidal HgTe nanocrystal films were first formed on the glass substrates by spin-coating. The HgTe nanocrystal films were then sintered at 150 degC, leading to a dramatic increase in their conductance, compared with the as-deposited films. The TFTs fabricated in this letter exhibit the typical characteristics of p-channel transistors with a field-effect mobility of 1.04 cm2/Vmiddots, a threshold voltage of +0.2 V, and an on/off current ratio of 1times103. These results suggest that spin-coating and sintering at a low temperature enable the simple and low-cost fabrication of nanocrystal-based TFTs on glass substrates 相似文献
4.
Hojin Lee Juhn-Suk Yoo Chang-Dong Kim In-Jae Chung Kanicki J. 《Electron Devices, IEEE Transactions on》2007,54(4):654-662
Inverted stagger hydrogenated-amorphous-silicon (a-Si:H) Corbino thin-film transistors (TFTs) were fabricated with a five-photomask process used in the processing of the active-matrix liquid-crystal displays (AM-LCD). The authors show that the a-Si:H Corbino TFT has the asymmetric electrical characteristics under different drain-bias conditions. To accommodate for these differences when the electrical device parameters are extracted, the authors developed asymmetric geometric factors. The ON-OFF current ratio can be significantly enhanced by choosing the outer electrode as the drain, while the field-effect mobility and threshold voltage are identical when different drain-bias conditions are used. Finally, the authors developed concepts of its possible application to AM-LCDs and active-matrix organic light-emitting displays 相似文献
5.
Jie Sun Devin A. Mourey Dalong Zhao Thomas N. Jackson 《Journal of Electronic Materials》2008,37(5):755-759
We report undoped ZnO films deposited at low temperature (200°C) using plasma-enhanced chemical vapor deposition (PECVD).
ZnO thin-film transistors (TFTs) fabricated using ZnO and Al2O3 deposited in situ by PECVD with moderate gate leakage show a field-effect mobility of 10 cm2/V s, threshold voltage of 7.5 V, subthreshold slope <1 V/dec, and current on/off ratios >104. Inverter circuits fabricated using these ZnO TFTs show peak gain magnitude (dV
out/dV
in) ~5. These devices appear to be strongly limited by interface states and reducing the gate leakage results in TFTs with lower
mobility. For example, ZnO TFTs fabricated with low-leakage Al2O3 have mobility near 0.05 cm2/V s, and five-stage ring-oscillator integrated circuits fabricated using these TFTs have a 1.2 kHz oscillation frequency
at 60 V, likely limited by interface states. 相似文献
6.
Amorphous-silicon thin-film transistor with liquid phase depositionof silicon dioxide gate insulator
Jiun-Lin Yeh Si-Chen Lee 《Electron Device Letters, IEEE》1999,20(3):138-139
The liquid phase deposition of silicon dioxide (LPD-SiO2) at 50°C has been successfully applied as the gate insulator for inverted, staggered amorphous silicon thin-film transistors (TFTs). The maximum field-effect mobility of the TFTs, estimated from the saturation region, was 0.53 cm2/V-s, comparable to that obtained for conventional, silicon nitride (SiNx ) gate transistors. The threshold voltage and subthreshold swing were 6.2 V and 0.76 V/decade, respectively. Interface and bulk characteristics are as good as those obtained for silicon nitride (SiN x) films deposited by plasma enhanced chemical vapor deposition 相似文献
7.
Chia-Wen Chang Szu-Fen Chen Che-Lun Chang Chih-Kang Deng Jiun-Jia Huang Tan-Fu Lei 《Electron Device Letters, IEEE》2008,29(5):474-476
High-performance poly-Si thin-film transistors (TFTs) with 50-nm nanowire (NW) channels fabricated by integrating a simple spacer formation scheme and metal-induced-lateral-crystallization (MILC) technique are proposed. By using the sidewall spacer formation scheme, the NW channels with nanometer-scale feature sizes can be easily fabricated, exhibiting superior channel controllability through the triple-gate structure. In employing the MILC technique, the grain crystallinity of NW channels is significantly superior to that formed by the solid-phase-crystallization (SPC) technique. Therefore, the MILC NW TFT exhibits greatly improved electrical performances, including lower threshold voltage, steeper subthreshold swing, and higher field-effect mobility, as compared to those of the SPC NW TFT. Moreover, the superior threshold-voltage rolloff characteristics of MILC NW TFT are also demonstrated. 相似文献
8.
Chih-Pang Chang YewChung Sermon Wu 《Electron Device Letters, IEEE》2007,28(11):990-992
In this letter, fluorine-ion (F+) implantation was employed to improve the electrical performance of metal-induced lateral-crystallization (MILC) polycrystalline-silicon thin-film transistors (poly-Si TFTs). It was found that fluorine ions minimize effectively the trap-state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, low subthreshold slope, and high on/off-current ratio. F+-implanted MILC TFTs also possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability than that of typical MILC TFTs. Moreover, the manufacturing processes are simple (without any additional thermal-annealing step), and compatible with typical MILC poly-Si TFT fabrication processes. 相似文献
9.
Chun-Hao Tu Ting-Chang Chang Po-Tsun Liu Che-Yu Yang Hsin-Chou Liu Wei-Ren Chen Yung-Chun Wu Chun-Yen Chang 《Electron Device Letters, IEEE》2006,27(4):262-264
The fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated in this letter. Experimental results have shown that fluorine ion implantation effectively minimized the trap state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, and high ON/OFF current ratio. Furthermore, the fluorine ions tended to segregate at the interface between the gate oxide and poly-Si layers during the excimer laser annealing, even without the extra deposition of pad oxide on the poly-Si film. The presence of fluorine obviously enhanced electrical reliability of poly-Si TFTs. 相似文献
10.
《Electron Device Letters, IEEE》2008,29(12):1309-1311
11.
Shree Prakash Tiwari Jungbae Kim Keith A. Knauer Do Kyung Hwang Lauren E. Polander Stephen Barlow Seth R. Marder Bernard Kippelen 《Organic Electronics》2012,13(7):1166-1170
We report on high-mobility top-gate organic field-effect transistors (OFETs) and complementary-like inverters fabricated with a solution-processed molecular bis(naphthalene diimide)-dithienopyrrole derivative as the channel semiconductor and a CYTOP/Al2O3 bilayer as the gate dielectric. The OFETs showed ambipolar behavior with average electron and hole mobility values of 1.2 and 0.01 cm2 V?1 s?1, respectively. Complementary-like inverters fabricated with two ambipolar OFETs showed hysteresis-free voltage transfer characteristics with negligible variations of switching threshold voltages and yielded very high DC gain values of more than 90 V/V (up to 122 V/V) at a supply voltage of 25 V. 相似文献
12.
New fabrication processes for selfaligned amorphous silicon TFTs are proposed. The TFTs have a polysilicon source and drain which are formed by ArF excimer laser annealing. They exhibit a field-effect mobility of 0.8 cm/sup 2//Vs, threshold voltage of 11 V, and on/off current ratio of higher than 10/sup 6/.<> 相似文献
13.
Shen-De Wang Wei-Hsiang Lo Tzu-Yun Chang Tan-Fu Lei 《Electron Device Letters, IEEE》2005,26(6):372-374
A process-compatible fluorine passivation technique of poly-Si thin-film transistors (TFTs) was demonstrated by employing a novel CF/sub 4/ plasma treatment. Introducing fluorine atoms into poly-Si films can effectively passivate the trap states near the SiO/sub 2//poly-Si interface. With fluorine incorporation, the electrical characteristics of poly-Si TFTs can be significantly improved including a steeper subthreshold slope, smaller threshold voltage, lower leakage current, higher field-effect mobility, and better on/off current ratio. Furthermore, the CF/sub 4/ plasma treatment also improves the reliability of poly-Si TFTs with respect to hot-carrier stress, which is due to the formation of strong Si-F bonds. 相似文献
14.
Abbas Jamshidi-Roudbari Po-Chin Kuo Miltiadis Hatalis 《Solid-state electronics》2008,52(10):1594-1601
In this paper the influence of mechanical tensile strain on the performance of thin film transistors (TFTs), with various channel geometries, and of ring oscillators, with 3, 7, 11, 21, and 51 number of stages and device channel lengths of 1, 4, and 8 μm, fabricated on stainless steel foil substrate is investigated. TFT parameters such as field effect mobility, threshold voltage, subthreshold slope, leakage and gate current for both n-channel, and p-channel TFTs are studied at various longitudinal tensile strain levels. For strain levels from 0.0% to 0.5%, the field effect mobility of n-channel TFTs increases while that of p-channel ones decreases as the longitudinal tensile strain increases. The field effect mobility, of both n-channel and p-channel TFTs, becomes independent of longitudinal tensile strain at strain levels greater than 0.5%. Threshold voltage and subthreshold slope of p-channel TFTs increases while that of n-channel ones does not follow a specific trend. The leakage current of both type devices tends to decrease by increasing the longitudinal tensile strain. The propagation delay, per inverter stage of a ring oscillator, is investigated at different supply voltages and tensile strain levels. The propagation delay of inverters with longer device channel length (?4 μm) tends to decrease while that of shorter length tends to increase as the longitudinal tensile strain increases. 相似文献
15.
Striakhilev D. Nathan A. Vygranenko Y. Servati P. Lee C.-H. Sazonov A. 《Display Technology, Journal of》2006,2(4):364-371
Amorphous silicon (a-Si) thin-film transistor (TFT) backplanes are very promising for active-matrix organic light-emitting diode displays (AMOLEDs) on plastic. The technology benefits from a large manufacturing base, simple fabrication process, and low production cost. The concern lies in the instability of the TFTs threshold voltage (VT) and its low device mobility. Although VT-instability can be compensated by means of advanced multi-transistor pixel circuits, the lifetime of the display is still dependent on the TFT process quality and bias conditions. A-Si TFTs with field-effect mobility of 1.1 cm2/Vmiddots and pixel driver circuits have been fabricated on plastic substrates at 150 degC. The circuits are characterized in terms of current drive capability and long-term stability of operation. The results demonstrate sufficient and stable current delivery and the ability of the backplane on plastic to meet AMOLED requirements 相似文献
16.
Performance of poly-Si TFTs fabricated by SELAX 总被引:1,自引:0,他引:1
Tai M. Hatano M. Yamaguchi S. Noda T. Seong-Kee Park Shiba T. Ohkura M. 《Electron Devices, IEEE Transactions on》2004,51(6):934-939
Selectively enlarging laser crystallization (SELAX) has been proposed as a new crystallization process for use in the fabrication of thin-film transistors (TFTs). This method is capable of producing a large-grained and flat film of poly-Si. The average grain size is 0.3/spl times/5 /spl mu/m, and the surface roughness of the poly-Si layer is less than 5 nm. The TFTs fabricated with this method have better performance and are more uniform than those produced with the conventional excimer laser crystallization (ELC) method. The average values of field-effect mobility are 440 cm/sup 2//Vs (n-type), and 130 cm/sup 2//Vs (p-type). The subthreshold slope for both types is 0.20 V/dec. Values for standard deviation of threshold voltage are 0.03 V (n-type) and 0.20 V (p-type). The delay time of the CMOS-inverter of SELAX TFTs is less than half that of ELC TFTs. 相似文献
17.
Mimura A. Konishi N. Ono K. Ohwada J.-I. Hosokawa Y. Ono Y.A. Suzuki T. Miyata K. Kawakami H. 《Electron Devices, IEEE Transactions on》1989,36(2):351-359
High-performance poly-Si TFTs were fabricated by a low-temperature 600°C process utilizing hard glass substrates. To achieve low threshold voltage (V TH) and high field-effect mobility (μFE), the conditions for low-pressure chemical vapor deposition of the active layer poly-Si were optimized. Effective hydrogenation was studied using a multigate (maximum ten divisions) and thin-poly-Si-gate TFTs. The crystallinity of poly-Si after thermal annealing at 600°C depended strongly on the poly-Si deposition temperature and was maximum at 550-560°C. The V TH and μFE showed a minimum and a maximum, respectively, at that poly-Si deposition temperature. The TFTs with poly-Si deposited at 500°C and a 1000-Å gate had a V TH of 6.2 V and μFE of 37 cm2/V-s. The high-speed operation of an enhancement-enhancement type ring oscillator showed its applicability to logic circuits. The TFTs were successfully applied to 3.3-in.-diagonal LCDs with integration of scan and data drive circuits 相似文献
18.
Seok-Woon Lee Tae-Hyung Ihn Seung-Ki Joo 《Electron Device Letters, IEEE》1996,17(8):407-409
High-mobility p-channel poly-Si TFTs were fabricated using a new low-temperature process (⩽500°C): self-aligned metal-induced lateral crystallization (MILC). With a one-step annealing at 500°C, activation of dopants in source/drain/gate a-Si films as well as the crystallization of channel a-Si films was achieved. The TFTs showed a threshold voltage of -1.7 V, and an on/off current ratio of ~107 without post-hydrogenation. The mobility was measured to be as high as 90 cm2/V·s, which is two to three times higher than that of the poly-Si TFTs fabricated by conventional solid-phase crystallization at around 600°C 相似文献
19.
20.
Dong-Suk Han Yeon-Keon Moon Sih Lee Kyung-Taek Kim Dae-Yong Moon Sang-Ho Lee Woong-Sun Kim Jong-Wan Park 《Journal of Electronic Materials》2012,41(9):2380-2386
In this study, we fabricated phosphorus-doped zinc oxide-based thin-film transistors (TFTs) using direct current (DC) magnetron sputtering at a relatively low temperature of 100°C. To improve the TFT device performance, including field-effect mobility and bias stress stability, phosphorus dopants were employed to suppress the generation of intrinsic defects in the ZnO-based semiconductor. The positive and negative bias stress stabilities were dramatically improved by introducing the phosphorus dopants, which could prevent turn-on voltage (V ON) shift in the TFTs caused by charge trapping within the active channel layer. The study showed that phosphorus doping in ZnO was an effective method to control the electrical properties of the active channel layers and improve the bias stress stability of oxide-based TFTs. 相似文献