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1.
For co-firing of MnZn-ferrite tapes and LTCC dielectric tapes, the sintering shrinkage curves and the coefficient of thermal expansion of ferrite and dielectric tapes were matched. Highly densified embedded ferrite without any cracks could be manufactured by co-firing at 900 °C in nitrogen atmosphere. However, the permeability of MnZn-ferrite co-fired between dielectric tapes is significantly reduced (μ´=100) compared to that of the separately sintered ferrite (μ´=500). Changes in the phase stability and microstructure of MnZn-ferrite were investigated to explain the permeability reduction in the embedded ferrite. It is supposed that early densification of the dielectric tapes on the top and bottom of the ferrite layer prevent the gas exchange during sintering which is necessary for (Mn,Zn)Fe2O4 spinel formation. As a result, high amount of Fe2O3 secondary phase and a Mn-rich spinel phase with low permeability remain in the embedded ferrite layer.  相似文献   

2.
MnZn铁氧体在电子工业上有着非常广泛的应用。MnZn铁氧体与银电极的低温共烧是实现其无源集成组件的关键。本文分析了影响MnZn铁氧体低温烧结的各种因素,重点介绍了目前国内外在MnZn铁氧体低温共烧领域中所取得的相关成果,最后提出其未来发展的方向。  相似文献   

3.
The paper studied the interfacial co-fired behavior between silver and Ba–Ti–B–Si–O glass–ceramics composites for LTCC application. The dielectric properties of this LTCC glass–ceramic materials were as follows: ??≈?8–10, tanδ?≤?2?×?10?3 (at 1 GHz), and its sintering temperature was lower than 900 °C. The Ag elemental distribution near the interface between glass–ceramics and Ag was investigated by scanning electronic microscopy and energy spectrum analysis. No de-lamination, camber and cracking were found between LTCC/Ag systems after firing at 810–900 °C for 2 h. The experimental results showed that the diffusion of silver was mainly decided by sintering temperature and microstructure of LTCC. Promoting densification of the LTCC can prevent Ag diffusion from co-fired interface.  相似文献   

4.
The co-firing behavior and interfacial diffusion of the co-fired system of NiCuZn ferrite (abbreviated as NiCuZn) and Pb(Mg1/3Nb2/3)O3 (abbreviated as PMN) relaxor ferroelectric are studied in this work. NiCuZn layers and PMN layers prepared by tape casting were stocked alternately. X-ray diffraction analysis shows no new phase appeared in the mixture of NiCuZn and PMN. Scanning electronic microscopy observation of the bi-layer composite indicates obvious warp at the interface due to the sintering mismatch between ferrite and ferroelectrics. The co-firing property of NiCuZn and PMN is modified by doping appropriate content of Bi2O3. By pressing a mixed composition interlayer in the ratio 50:50 between the ferrite and ferroelectric layers, a crack-free multilayer structure could be obtained.  相似文献   

5.
Li2MgTiO4 (LMT) ceramics which are synthesized using a conventional solid-state reaction route. The LMT ceramic sintered at 1250°C for 4 h had good microwave dielectric properties. However, this sintering temperature is too high to meet the requirement of low-temperature co-fired ceramics (LTCC). In this study, the effects of B2O3 additives and sintering temperature on the microstructure and microwave dielectric properties of LMT ceramics were investigated. The B2O3 additive forms a liquid phase during sintering, which decreases the sintering temperature from 1250°C to 925°C. The LMT ceramic with 8 wt% B2O3 sintered at 925°C for 4 h was found to exhibit optimum microwave dielectric properties: dielectric constant 15.16, quality factor 64,164 GHz, and temperature coefficient of resonant frequency -28.07 ppm/°C. Moreover, co-firing of the LMT ceramic with 8 wt% B2O3 and 20 wt% Ag powder demonstrated good chemical compatibility. Therefore, the LMT ceramics with 8 wt% B2O3 sintered at 925°C for 4 h is suitable for LTCC applications.  相似文献   

6.
采用低温共烧陶瓷(LTCC)/低温共烧铁氧体(LTCF)相结合异质材料共烧工艺制作 EMI 滤波器,介绍了器件的设计、仿真方法、制作工艺与性能测试结果.通过介质材料掺杂改性和优化流延工艺,解决了异质材料低温共烧匹配技术难点,实现了LTCC/LTCF异质材料良好的共烧兼容特性.EMI滤波器性能分析和测试结果表明,器件具有高的插入损耗,可在宽频率范围内防止EMI噪声.  相似文献   

7.
用氧化物陶瓷工艺制备高频MnZn功率铁氧体材料,在烧结升温、保温段采用五种不同的氧分压进行烧结.通过测试各样品的起始磁导率、功耗及饱和磁通密度、剩余磁通密度,确定较合适的升温烧结氧分压.结果表明,升温阶段、致密化区氧分压控制在0.1%~1%为宜,这为此类材料的成功量产提供指导.  相似文献   

8.
Low temperature cofirable MnZn ferrite for power electronic applications   总被引:1,自引:0,他引:1  
A new MnZn ferrite tape material for sintering at 900 °C and its performance in power electronic embedded multilayer inductors of several μH inductance are described. The low sintering temperature is achieved by optimizing powder processing and sintering additives. The material is suited for processing within the low temperature cofired ceramics (LTCC) technology and it is particularly compatible with low loss Ag metallization. Although reduced by a factor of two compared to high-temperature sintered material, its relative amplitude permeability of 700 allows for numerous device applications below the Curie temperature of 260 °C. Volumetric losses are not affected by the new material formulation since increased hysteresis losses are compensated by reduced eddy current losses. Power line filters with ceramic integrated inductors and surface mounted capacitors exhibit a current capacity of up to 10 A and a shift in cutoff frequency compatible with the measured BH curve of the material. By integration of these inductors with conventional dielectric LTCC tapes a strain-induced permeability quenching is revealed and attributed to magnetostriction. Therefore good thermal matching between tape materials is needed, but the effect also permits construction of variometers and pressure sensors without moving mechanical parts.  相似文献   

9.
分别采用水热法与氧化物法制备Ni0.5Cu0.1Zn0.4Fe2O4铁氧体材料。基于低温共烧的要求,研究两种工艺铁氧体粉料电磁性能及显微结构的差异。结果表明,以硝酸盐为原材料的水热法可制备出良好烧结活性的NiCuZn铁氧体粉体,在添加一定量的Bi2O3及MoO3时,水热合成粉料的μi的温度稳定性较好,饱和磁通密度Bs较高,晶粒尺寸均匀、结构致密性好。  相似文献   

10.
To develop a low dielectric constant of LTCC substrate, we studied the effect of the sintering and crystallization behavior on the dielectric properties of a sintered body by mixing a CaO–Al2O3–SiO2 frit and a CaO–MgO–SiO2 frit for a low dielectric constant of LTCC substrates. In this work, the two glass frits were mixed at different proportions and sintered at 860~920°C. After sintering at 900oC for 1h, the glass frits crystallized into diopside and anorthite. The sintered bodies exhibited dielectric properties, ? r?=?6~8.6 at 1 GHz, which is an essential condition for a substrate in microwave devices. The results suggest that the glass-ceramic can be applied to low dielectric LTCC materials in the electronics packaging industry.  相似文献   

11.
采用氧化物陶瓷工艺制备MnZn铁氧体材料,研究了烧结过程氧分压及热处理氧分压对于其电磁性能的影响。实验表明,烧结过程中的氧分压P(O_2)越高,材料中的Fe2+含量越低,烧结体晶粒越大;氧分压的最佳范围在4~7%附近,过高或过低均会降低材料的磁性能。对于因氧分压偏离最佳范围导致磁性能低下的MnZn烧结体,可以通过后续的热处理工艺调节Fe2+含量以恢复其磁性能。根据这些结果,综合烧结工艺和热处理工艺的优势,采用21%的氧分压烧结获得较大的晶粒之后再在0.1%的氧分压气氛中热处理的方法调节铁氧体的Fe2+含量,获得了25℃时μi=10600,Bs=427 mT,μi(200 kHz)/μi(10 kHz)=98%,综合性能良好的高磁导率MnZn铁氧体磁芯。  相似文献   

12.
自行研制开发了新一代软磁铁氧体烧结设备--旋转底式气氛烧结炉,它采用旋转底盘、全纤维高温炉衬、分区分组加热、循环强制冷却、计算机全自动控制等技术,具有批次产量大、温度和气氛均匀性好、控制精度高、产品一致性优、操作使用灵活等优越特性.特别适用于高磁导率锰锌铁氧体和低功耗软磁铁氧体等高档铁氧体材料的气氛烧结.  相似文献   

13.
对比研究了N2窑动态气氛和真空炉静气氛及Al2O3粉对MnZn铁氧体Zn挥发的影响,并研究了由尼导致产品机械强度的变化,Al2O3在MnZn铁氧体烧结过程吸收挥发出Zn蒸汽,并反应生成ZnAl2O3,与真空炉静态气氛相比,N2窑动态气氛加剧了MnZn铁氧体的Zn挥发。由于成分变化,导致晶格常数的改变,从而在铁氧体表面产生很大的内应力,同时表层Zn挥发导致的松散“框架”结构进一步加剧了这种应力,使产  相似文献   

14.
Nanocrystalline indium tin oxide (ITO) powders with different tin contents ranging from 0 to 8 at% were prepared by a coprecipitation process. A mixture of rhombohedral and cubic structured nanocrystalline ITO powders was obtained, and the amount of the rhombohedral ITO increased as the content of Sn increased. During heat-treatment the rhombohedral ITO was transformed to cubic around 900C. The phase transformation behavior of the powders was examined as a function of oxygen partial pressure. When the rhombohedral ITO powder was heat-treated in a low oxygen partial pressure (nitrogen gas) atmosphere the phase transformation was accelerated and this acceleration can be attributed to the formation of oxygen vacancies that accelerate atomic transport in the rhombohedral ITO.  相似文献   

15.
Ni/ (Ba,Sr)TiO3 PTC composite of low resistivity was fabricated by a solid state route. A mildly reducing sintering atmosphere was employed to avoid the oxidation of nickel. Metallic nickel is the main chemical state after sintering in the mildly reducing sintering atmosphere. With the increase in nickel amount, the room-temperature resistivity declines and the PTC effect worsens. The quantum mechanical tunneling effect at the Ni–(Ba,Sr)TiO3 interface is presumably the prime factor in the deterioration of the PTC effect. PbO–B2O3–ZnO–SiO2 glass was added to modify the interface between nickel and (Ba,Sr)TiO3 ceramics. The intergranular phase introduced by the glass has an amorphous structure and exists at the interfaces and triple junctions of (Ba,Sr)TiO3 grains and nickel grains. No obvious diffusion occurs at the interface between crystalline (Ba,Sr)TiO3 grain and the intergranular phase. Also the added-glass improves the distribution of metal phase. The proper glass addition screens interfacial electron tunneling effect and improves the composite electrical properties. An abundance of the intergranular phase due to excess glass will, however, result in high room-temperature resistivity. The influences of nickel amount and glass amount on the microstructure evolution and electrical properties were analyzed.  相似文献   

16.
采用注塑工艺压制生坯,在氮气气氛下、以不同温度(800?1300℃)烧结制备铁硅铬环形磁芯。测试了磁环的电磁性能、频谱特性和XRD谱,观察了磁环表面和截面的SEM形貌等。系统研究了烧结温度对密度、磁导率、频谱特性、物相、显微结构等的影响。结果表明,在900℃以下烧结,密度、显微结构和电磁性能没变。在1000℃烧结温度下,电磁性能最佳。1000℃以上烧结,密度升高,但是磁环内部出现另相和晶粒异常长大,导致电磁性能急剧下降。由于1000℃的烧结条件下,铁硅铬磁环有最佳低频电磁性能,为正在注塑研发铁硅铬相关产品提供指导。  相似文献   

17.
无压低温银烧结技术是高功率密度SiC器件的无铅化关键互连技术,对SiC功率模块的可靠性提升具有重要的意义。针对典型Si基功率模块封装连接工艺及其可靠性,阐述了当前无压低温纳米银烧封装技术的进展与思考:(1)讨论了电力电子器件封装连接可靠性的典型风险和原因;(2)介绍了无压低温连接技术的最新发展;(3)基于Si基典型功率模块封装向高可靠SiC功率模块转变过程中在封装结构和材料方面的需求,阐述了无压低温银烧结技术在引线型、平面型和双面冷却功率模块封装方面的进展;(4)提出无压低温银烧结技术当前有待解决的技术难题。  相似文献   

18.
In multiplayer passive devices, low sintering temperature dielectric materials were needed to co-fire with low melting point inner electrode such as copper or silver, a major problem of base metal electrode (BME) was that the devices must be fired under low oxygen partial pressure atmosphere to protect Cu from oxidation. In this paper, dielectric properties of Bi(VxNb1?x)O4 (x?=?0.001, 0.004, 0.008, 0.016, 0.048) microwave ceramics sintered under air and N2 atmosphere have been investigated. The densification temperature sintered in different atmosphere decreased from 1010 to 830°C with the amount of V2O5 increasing from 0.001 to 0.048. Due to the increasing vacancy defects, the density of ceramics sintered in N2 was smaller than that sintered in air. The ceramics sintered under N2 have similar dielectric constant, and its Qf values are higher while x?<?0.016.  相似文献   

19.
We studied the dielectric properties of Al2O3-MgO-ReOx (Re: rare earth) systems in the microwave region and found that the magnetoplumbite phases in the MgO-poor regions of MgReAl11O19 (Re: La Tb) compositions had positive TCF (temperature coefficient of resonance frequency) values in spite of having low dielectric constants of under 20. By mixing a lead-free glass with the above system, a novel LTCC (which we term an AMSG) was obtained that was characterized by a low dielectric constant (< 10), a near zero TCF, and high bending strength. When firing these AMSG green sheets inserted between HTCC alumina or magnesia green sheets that cannot be sintered at the AMSG sintering temperature, the AMSG sheets were seen to shrink not in the x-y directions but in the z direction due to the constraining effects of the HTCC layers. The obtained non-shrinkage substrate had precise dimensions and a high degree of flatness. The AMSG and the non-shrinking techniques have potential for application to integrated RF modules in mobile communications equipment.  相似文献   

20.
Low-temperature sintering and dielectric properties of the Bi(Nb1?x Ta x )O4 (x?=?0.1, 0.3, and 0.5) system was investigated as a function of the zinc borosilicate (ZBS) glass content with a view to applying this system to LTCC technology. The addition of 7 wt% ZBS glass ensured a successful sintering below 900°C. The complete solid solution of Bi(Nb, Ta)O4 with an orthorhombic structure was formed and the high temperature form of Bi(Nb, Ta)O4 with a triclinic structure was not observed. The second phase of Bi2SiO5 was observed for all compositions. The non-relative liquid phase sintering (NLPS) occurred and the one-stage sintering was conducted. The Q?×?f values were improved by the addition of Ta. Bi(Nb0.7Ta0.3)O4 with 7 wt% ZBS glass sintered at 900°C demonstrated 35.8 in the dielectric constant (? r), 2,200 GHz in the quality factor (Q?×?f 0), and ?48 ppm/°C in the temperature coefficient of resonant frequency (τ f).  相似文献   

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