不锈钢束管光纤余长的控制

不锈钢束管是OPGW和海底光缆等特种光缆的关键部件,而光纤余长则是不锈钢束管的一个重要指标.为提高最终产品的成品率和不锈钢束管的生产效率,分析了不锈钢束管光纤余长的产生原理,讨论了各种影响光纤余长的因素,包括光纤张力、油膏温度、油膏填充度、光纤芯数、钢管张力等,并对如何控制光纤余长提出了一些具体解决方法.     

松套充油光纤余长控制技术

松结构光缆设计中，光纤余长是十分重要的结构参数，对以松套充油光纤为基本单位的松结构光缆，光纤二次被覆是光纤余长控制的关键工序，本文通过典型生产线，分析了光纤二次被覆生产工艺中光纤余长形成的物理过程和影响的因素，讨论松壳充油光纤余长的控制技术。     

光缆二次套塑余长影响因素的探讨

在光缆工艺中，光纤余长作为光缆最重要的工艺控制点。本文主要探讨了光纤二次套塑余长的形成过程和一些主要的余长影响因素。如光纤放线张力，冷热水温差，材料，主牵引张力，模具的配置等因素对余长的影响。     

电力特种光缆OPGW的设计要点

从OPGW光缆的结构特点入手，分析了确保光单元传输性能的主要因素光纤余长的产生机理及温度对光纤余长的影响，重点阐述了地线单元电气性能的主要参数允许短路电流的详细计算过程，并提出了OPGW光缆的发展方向和开发前景。     

GYFTY非金属光缆拉伸性能的优化

主要介绍了一种紧凑型的GYFTY非金属光缆,并从套塑余长大小、绞合余长大小等方面分析了影响GYFTY非金属光缆拉伸性能的因素,最后通过大量的试验数据验证了GYFTY非金属光缆拉伸性能。     

电力特种光缆ADSS的设计要点

从ADSS光缆的结构特点入手，分析了光纤余长和抗张元件在ADSS光缆设计中的重要地位，详细阐述了层绞式ADSS光缆中绞合余长的产生机理和控制方法以及加强元件芳纶纱的选取原则和求解过程，并提出了ADSS光缆的发展方向和开发前景。     

SZ松套层绞式光缆的光纤余长探讨

本文主要论述了ＳＺ松套层绞式光缆中，对光纤余长的计算及获取光纤余长的方法。     

光缆温度特性与余长关系

本文介绍了光缆温度特性与光缆中光纤余长关系的定量分析与解释，对光缆设计制造者有参考价值。     

非金属光缆中光纤余长的设计探讨

本文通过计算，比较皱纹钢带铠装光缆与非金属光缆中光纤的余长随温度的变化值，分析非金属光缆中光纤的初始余长的合理范围。     

海底光缆余长测试新方法可行性分析

光纤余长是海底光缆的重要性能指标,目前针对光纤余长的分析主要采用解析法,尚没有进一步精确分析光纤余长分布的实验方法。文章提出两种精确分析管内光纤余长分布的实验方法:高能射线法和光纤光栅法,并从理论上分析了这两种方法的可行性。     

同型外延材料表面光伏法测试的分析

本文应用数值计算方法研究了表面光电压是表面非平衡少子浓度的单调函数这一假设对于同型外延材料的可应用性。我们发现这一假设对该材料一般地说并不成立。因此在使用等光伏表面光伏法测试同型外延材料少子扩散长度时一般不应把表面非平衡少子浓度视为常数。在文中,我们也分析了可以把表面非平衡少子浓度作常数处理的条件。     

解析车载音视频设备电磁兼容标准

介绍了车载音视频设备电磁兼容标准,从标准的整体内容到具体试验项目说明了该标准与所参考的国际标准及欧盟指令的不同之处,其中包括骚扰和抗扰度测量。阐述了测量设备的选择使用、测试场地的应用及测量布置。     

光缆1550nm窗口衰减变化分析及改善方法探讨

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光纤二次套塑余长控制及激光多普勒在线测量技术的应用

保证光纤余长测量的准确性和稳定性，是光缆生产困难的技术工艺之一。本文针对特定的光纤二次套塑工艺，分析了传统余长测量方法和近期发展起来的激光测量方法的技术特点，对提高激光在线测量系统稳定性的可能途径进行了探讨。     

Ion implantation and rapid thermal processing of Ill-V nitrides

Ion implantation doping and isolation coupled with rapid thermal annealing has played a critical role in the realization of high performance photonic and electronic devices in all mature semiconductor material systems. This is also expected to be the case for the binary III-V nitrides (InN, GaN, and A1N) and their alloys as the epitaxial material quality improves and more advanced device structures are fabricated. In this article, we review the recent developments in implant doping and isolation along with rapid thermal annealing of GaN and the In-containing ternary alloys InGaN and InAlN. In particular, the successful n- and p-type doping of GaN by ion implantation of Si and Mg+P, respectively, and subsequent high temperature rapid thermal anneals in excess of 1000°C is reviewed. In the area of implant isolation, N-implantation has been shown to compensate both n- and p-type GaN, N-, and O-implantation effectively compensates InAlN, and InGaN shows limited compensation with either N- or F-implantation. The effects of rapid thermal annealing on unimplanted material are also presented.     

A two-dimensional model for the excess interstitial distribution in silicon during thermal oxidation

A steady-state solution for the partial differential equation governing the two-dimensional distribution of the excess interstitials during thermal oxidation of silicon was obtained using a finite difference method. It is assumed that the excess interstitials at the unoxidizing Si-SiO2interface are annihilated at a rate proportional to the excess interstitial concentration at the interface and the surface recombination velocity of the excess interstitials. Lin et al.'s experimental observation that the lateral diffusion length of the excess interstitials under the unoxidizing Si-SiO2interface is much shorter than the vertical diffusion length in the bulk can be explained by this interface annihilation model. Surface recombination velocity divided by the bulk diffusivity of self-interstitials in silicon at the Si-SiO2interface is found to be about 0.4-1.0/µm within the oxidation temperature range between 900° and 1100°C.     

Fabrication and characterization of a linear mode confinementmodulator on GaAs

An electrooptic modulator based on GaAs is proposed. The configuration as well as the operating principle yield high packing density and insensitivity to the material variation. One configuration has been fabricated and characterized. Its linear modulation characteristic has been measured, and a modulation depth of more than 70% has been obtained with a device length of only 1.5 mm. Several improvements are proposed to reduce the driving voltage and the excess losses. For example, a modified electrode structure can improve the beam shaping in the connecting guide and thus increase the transmission when the device is in the `on' state     

熔锥型熊猫光纤耦合器附加损耗分析

从熊猫光纤在火焰中熔融拉伸的实际变形过程出发,通过数值计算和实验分析了应力区、偏振主轴间存在角度误差及熔融拉锥工艺参数等因素对附加损耗的影响机理,并指明应力区是影响熔锥型熊猫光纤耦合器附加损耗的主要原因.数值计算和实验结论对熔锥型熊猫光纤耦合器的工艺改进具有一定的指导意义.